DMT69M8LPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features BVDSS RDS(ON) Max 60V 12mΩ @ VGS = 10V 14mΩ @ VGS = 4.5V ID TC = +25°C 70A 55A 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low RDS(ON) – Minimizes Power Losses Low QG – Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Case: PowerDI 5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) ideal for high efficiency power management applications. High Frequency Switching Sync. Rectification DC-DC Converters ® PowerDI5060-8 Pin1 Bottom View Top View Internal Schematic S D S D S D G D Top View Pin Configuration Ordering Information (Note 4) Part Number DMT69M8LPS-13 Notes: Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D S D D D D D D T69M8LS T6009LS YY WW YY WW S S G S S S D = Manufacturer’s Marking T69M8LS & T6009LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 - 53) G PowerDI is a registered trademark of Diodes Incorporated. DMT69M8LPS Document number: DS38379 Rev. 2 - 2 1 of 7 www.diodes.com May 2016 © Diodes Incorporated DMT69M8LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C TC = +25°C TC = +70°C Continuous Drain Current (Note 5) Continuous Drain Current (Note 6) Units V V IS IDM IAS EAS Value 60 ±16 10.2 8.2 70 55 100 160 20.3 20.6 Symbol PD RθJA PD RθJC TJ, TSTG Value 2.3 53 113 1.1 -55 to +150 Units W °C/W W °C/W °C ID ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH A A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics TA = +25°C TC = +25°C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 48V, VGS = 0V VGS = ±16V, VDS = 0V VGS(TH) RDS(ON) VSD — 9.8 12 0.9 2 12 14 — V Static Drain-Source On-Resistance 0.7 — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 13.5A VGS = 4.5V, ID = 11.5A VGS = 0V, IS = 20A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR — — — — — — — — — — — — — 1,925 438 41 1.7 33.5 15.6 4.7 5.3 4.5 8.6 35.9 15.7 18.2 — — — — — — — — — — — — — QRR — 33.1 — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 13.5A ns VDD = 30V, VGS = 10V, RG = 6Ω, ID = 13.5A ns nC IF = 13.5A, di/dt = 400A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT69M8LPS Document number: DS38379 Rev. 2 - 2 2 of 7 www.diodes.com May 2016 © Diodes Incorporated DMT69M8LPS 50.0 30 VDS = 5.0V VGS = 10.0V VGS = 4.5V 40.0 35.0 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 45.0 VGS = 4.0V VGS = 3.5V 30.0 25.0 VGS = 3.0V VGS = 2.5V 20.0 15.0 10.0 20 15 10 125℃ 85℃ 5 5.0 150℃ VGS = 2.0V 0.0 0 0 0.5 1 1.5 2 2.5 3 0 1 9.00 VGS = 4.5V 8.00 VGS = 10V 6.00 5.00 0 5 10 15 20 3 4 5 Figure 2. Typical Transfer Characteristic 10.00 7.00 2 VGS, GATE-SOURCE VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 25 30 30 ID = 20A 25 ID = 15A 20 15 10 5 0 2 4 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 2.2 0.02 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 25℃ -55℃ VGS = 4.5V 0.018 0.016 150℃ 0.014 125℃ 0.012 85℃ 0.01 0.008 25℃ 0.006 -55℃ 0.004 0.002 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMT69M8LPS Document number: DS38379 Rev. 2 - 2 3 of 7 www.diodes.com 2 1.8 1.6 VGS = 4.5V, ID = 15A 1.4 1.2 1 VGS = 10V, ID = 20A 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature May 2016 © Diodes Incorporated 0.018 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMT69M8LPS 0.016 0.014 VGS = 4.5V, ID = 15A 0.012 0.01 0.008 0.006 VGS = 10V, ID = 20A 0.004 0.002 0 -50 -25 0 25 50 75 100 125 2.5 2 ID = 1mA 1.5 ID = 250μA 1 0.5 0 150 -50 30 0 25 50 75 100 125 150 10000 f=1MHz VGS = 0V 25 CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) -25 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 20 15 TA = 85oC 10 TA = 125oC TA = TA = 150oC 5 25oC Ciss 1000 Coss 100 Crss TA = -55oC 10 0 0 0.3 0.6 0.9 0 1.2 5 10 15 20 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 1000 10 PW =10µs RDS(ON) Limited 100 ID, DRAIN CURRENT (A) 8 VGS (V) 25 6 4 VDS = 30V, ID = 13.5A 2 10 PW =100µs PW =1ms 1 0.1 PW =10ms TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS= 10V PW =100ms PW =1s 0.01 0 0 7 14 21 28 35 Document number: DS38379 Rev. 2 - 2 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Qg (nC) Figure 11. Gate Charge DMT69M8LPS 0.1 4 of 7 www.diodes.com May 2016 © Diodes Incorporated DMT69M8LPS r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJC(t) = r(t) * RθJC RθJC = 1.1℃/W Duty Cycle, D = t1 / t2 D=0.005 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMT69M8LPS Document number: DS38379 Rev. 2 - 2 5 of 7 www.diodes.com May 2016 © Diodes Incorporated DMT69M8LPS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 b3 (4X) M M1 Detail A L1 G PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 – b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 – – L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMT69M8LPS Document number: DS38379 Rev. 2 - 2 G Y(4x) 6 of 7 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 May 2016 © Diodes Incorporated DMT69M8LPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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