N-Channel MOSFET 500V, 7.0 A, 0.9Ω General Description Features The MDF7N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF7N50 is suitable device for SMPS, high Speed switching and general purpose applications. VDS = 500V ID = 7.0A RDS(ON) ≤ 0.9Ω @ VGS = 10V @ VGS = 10V Applications Power Supply HID Lighting MDF7N50 N-channel MOSFET 500V MDF7N50 D G G D S S Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V 7.0 A 4.2 A 28 A 36 0.29 W W/ oC 4.5 V/ns mJ o TC=25 C Continuous Drain Current (※) o TC=100 C Pulsed Drain Current (1) ID IDM TC=25oC Power Dissipation Derate above 25 oC Peak Diode Recovery dv/dt(3) PD Dv/dt (4) Single Pulse Avalanche Energy Junction and Storage Temperature Range EAS 270 TJ, Tstg -55~150 Symbol Rating RθJA 62.5 RθJC 3.5 o C ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) (1) Thermal Resistance, Junction-to-Case Dec. 2009. Version 1.2 1 Unit o C/W MagnaChip Semiconductor Ltd. Part Number Temp. Range Package Packing RoHS Status MDF7N50TH -55~150oC TO-220F Tube Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 500 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0 IDSS VDS = 500V, VGS = 0V - - 1 µA IGSS VGS = ±30V, VDS = 0V - Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 3.5A gfs VDS = 30V, ID = 3.5A Forward Transconductance V - 100 nA 0.76 0.9 Ω - 7 - S - 17.5 - - 5 - MDF7N50 N-channel MOSFET 500V Ordering Information Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 6.5 Input Capacitance Ciss - 740 VDS = 400V, ID = 7.0A, VGS = 10V(3) VDS = 25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss - 3.7 Output Capacitance Coss - 95.5 Turn-On Delay Time td(on) - Rise Time 29.8 Turn-Off Delay Time - 36.4 Fall Time tf - 23.6 IS - 7.0 td(off) VGS = 10V, VDS = 250V, ID = 7.0A, RG = 25Ω(3) pF 16.8 - tr nC ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VSD trr IS = 7.0A, VGS = 0V IF = 7.0A, dl/dt = 100A/µs(3) Qrr - - A 1.4 V - 260 ns - 1.7 µC Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤7.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=10mH, IAS=7.0A, Dec. 2009. Version 1.2 VDD=50V, Rg =25Ω, Starting TJ=25°C 2 MagnaChip Semiconductor Ltd. Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V ID,Drain Current [A] 16 14 1.50 RDS(ON) [Ω ] 18 12 10 Notes 1. 250㎲ Pulse Test 2. TC=25℃ 8 6 1.25 1.00 VGS=10.0V VGS=20V 0.75 4 2 0.50 0 0 2 4 6 8 10 12 14 16 18 0 20 5 10 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 1.8 ※ Notes : 1. VGS = 10 V 2. ID = 5 A 1.6 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 15 ID,Drain Current [A] VDS,Drain-Source Voltage [V] MDF7N50 N-channel MOSFET 500V 1.75 20 1.4 VGS=10V 1.2 VGS=4.5V 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.0 0.9 0.8 -50 150 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature 100 * Notes ; 1. VDS=30V IDR Reverse Drain Current [A] ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ ID [A] 10 150℃ -55℃ 10 150℃ 25℃ 1 25℃ 1 4 5 6 7 8 9 0.1 0.0 10 Fig.5 Transfer Characteristics Dec. 2009. Version 1.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain Voltage [V] VGS [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDF7N50 N-channel MOSFET 500V 1600 10 ※ Note : ID = 7.0A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1400 Coss 100V VGS, Gate-Source Voltage [V] 250V 8 1200 Capacitance [pF] 400V 6 4 1000 Ciss 800 600 400 2 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 0 0 2 4 6 8 10 12 14 16 18 0 0.1 20 1 Fig.7 Gate Charge Characteristics 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.8 Capacitance Characteristics 8 2 10 µs 1 100 µs 6 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 Operation in This Area is Limited by R DS(on) 10 ms 10 10 0 DC 100 ms 1s -1 4 2 Single Pulse TJ=Max rated TC=25℃ 10 -2 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 10000 single Pulse RthJC = 3.5.℃/W TC = 25℃ 0 8000 D=0.5 Power (W) Zθ JC(t), Thermal Response 10 0.2 0.1 -1 10 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 0.05 0.02 0.01 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=3.5℃/W single pulse 6000 4000 2000 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 0 1E-5 1 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Dec. 2009. Version 1.2 1E-4 4 MagnaChip Semiconductor Ltd. 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified S y mbol A b b1 C D E e F G L L1 Q Q1 ￠R Dec. 2009. Version 1.2 Min 4.50 0.63 1.15 0.33 15.47 9.60 Nom MDF7N50 N-channel MOSFET 500V Physical Dimensions Max 4.93 0.91 1.47 0.63 16.13 10.71 2.54 2.34 6.48 12.24 2.79 2.52 3.10 3.00 2.84 6.90 13.72 3.67 2.96 3.50 3.55 5 MagnaChip Semiconductor Ltd. U.S.A Sunnyvale Office 787 N. 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Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. \ MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Dec. 2009. Version 1.2 6 MagnaChip Semiconductor Ltd.