IGC168T170S8RM IGBT3 Power Chip Features: 1700V Trench + Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling Chip Type VCE IC IGC168T170S8RM 1700V 150A This chip is used for: power modules C Applications: drives G Die Size Package 13.38 x 12.58 mm2 sawn on foil E Mechanical Parameters Raster size Emitter pad size (incl. gate pad) 13.38 x 12.58 11.159 x 10.353 mm Gate pad size 2 1.674 x 0.899 Area total 168.3 Thickness 190 µm Wafer size 200 mm Max.possible chips per wafer Passivation frontside Pad metal Backside metal 150 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, <500µm Reject ink dot size Recommended storage environment 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793O, L7793T, L7793E, Edition 0.9, 27.06.2014 IGC168T170S8RM Maximum Ratings Parameter Symbol Value Unit 1700 V 1) A Collector-Emitter voltage, Tvj =25 C VCE DC collector current, limited by Tvj max IC Pulsed collector current, tp limited by Tvj max Ic, puls 450 A Gate emitter voltage VGE 20 V Junction temperature range Tvj -40 ... +175 °C Operating junction temperature Tvj -40...+150 C tSC 10 µs Short circuit data 2) VGE = 15V, VCC = 1000V, Tvj = 150°C I C , m a x = 300A, V C E , m a x = 1700V Reverse bias safe operating area 2 ) (RBSOA) Tvj 150 °C 1) depending on thermal properties of assembly 2) not subject to production test - verified by design/characterization Static Characteristic (tested on wafer), Tvj =25 C Value Parameter Symbol Conditions Unit min. Collector-Emitter breakdown voltage V(BR)CES Collector-Emitter saturation voltage typ. max. VGE=0V , IC= 2 mA 1700 VCEsat VGE=15V, IC=150A 1.6 1.9 2.2 Gate-Emitter threshold voltage VGE(th) IC=6mA , VGE=VCE 5.2 5.8 6.4 Zero gate voltage collector current ICES VCE=1700V , VGE=0V 8 µA Gate-Emitter leakage current IGES VCE=0V , VGE=20V 300 nA Integrated gate resistor rG 3) 3) V 5 Vcesat tested at lower current Dynamic Characteristic (not subject to production test - verified by design / characterization), Tvj =25 C Parameter Input capacitance Symbol Cies Conditions V C E = 25 V , Value min. typ. Cres f= 1 MH z Unit 13500 V G E = 0V , Reverse transfer capacitance max. pF 430 Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793O, L7793T, L7793E, Edition 0.9, 27.06.2014 IGC168T170S8RM Further Electrical Characteristic Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793O, L7793T, L7793E, Edition 0.9, 27.06.2014 IGC168T170S8RM Chip Drawing G E E E E E T E E E E E = Emitter G = Gate T = Test pad do not contact Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793O, L7793T, L7793E, Edition 0.9, 27.06.2014 IGC168T170S8RM Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793O, L7793T, L7793E, Edition 0.9, 27.06.2014