Foshan BRA2N60 N-channel mosfet in a to-262 plastic package Datasheet

BRA2N60
Rev.D Nov.-2015
描述
/
DATA SHEET
Descriptions
TO-262 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-262 Plastic Package.
特征
/ Features
低栅电荷,低反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途
/
Applications
用于高功率 DC/DC 转换和功率开关。
These devices are well suited for high efficiency switching DC/DC converters and switch mode power
supplies.
内部等效电路
引脚排列
/ Equivalent Circuit
/ Pinning
1
2
3
PIN1:G
放大及印章代码
PIN 2:D
PIN 3:S
/ hFE Classifications & Marking
见印章说明。See Marking Instructions.
http://www.fsbrec.com
1/6
BRA2N60
Rev.D Nov.-2015
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Drain-Source Voltage
符号
Symbol
VDSS
数值
Rating
600
单位
Unit
V
Drain Current
ID(Tc=25℃)
2.0
A
Drain Current
ID(Tc=100℃)
1.3
A
IDM
6.0
A
Gate-Source Voltage
VGSS
±30
V
Single Pulsed Avalanche Energy
EAS
120
mJ
Repetitive Avalanche Energy
EAR
5.4
mJ
Avalanche Current
IAR
2.0
A
Power Dissipation
PD(Tc=25℃)
54
W
TJ,TSTG
-55 to 150
℃
Thermal Resistance Junction-case
RθJC
2.32
℃/W
Thermal Resistance Junction-ambient
RθJA
62.5
℃/W
Drain Current - Pulsed
Operating and Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
VGS=0V
ID=250μA
600
V
VDS=600V
VGS=0V
1.0
μA
VDS=480V
TC=125℃
100
μA
VGS=±30V
VDS=0V
±0.1
μA
4.0
V
5.0
Ω
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
VGS(th)
VDS=VGS
ID=250μA
Static Drain-Source
On-Resistance
RDS(on)
VGS=10V
ID=1.0A
4.0
Forward Transconductance
gFS
VDS=40V
ID=1.0A
2.05
Drain-Source Diode Forward
Voltage
VSD
VGS=0V
IS=2.0A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
IGSS
2.0
S
1.4
V
320
420
pF
35
46
pF
Crss
4.5
6.0
pF
Turn-On Delay Time
td(on)
8.0
30
ns
Turn-On Rise Time
tr
23
60
ns
Turn-Off Delay Time
td(off)
25
60
ns
28
70
ns
Turn-Off Fall Time
http://www.fsbrec.com
tf
VDS=25V
f=1.0MHz
VDD=300V
RG=25Ω
VGS=0V
ID=2.0A
2/6
BRA2N60
Rev.D Nov.-2015
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
http://www.fsbrec.com
3/6
BRA2N60
Rev.D Nov.-2015
外形尺寸图
DATA SHEET
/ Package Dimensions
http://www.fsbrec.com
4/6
BRA2N60
Rev.D Nov.-2015
印章说明
/
DATA SHEET
Marking Instructions
BR
****
2N60
说明:
为公司代码
BR:
2N60:

为型号代码
****:

为生产批号代码,随生产批号变化。
Note:
BR:
Company Code
2N60:
Product Type.
****:
Lot No. Code, code change with Lot No.
http://www.fsbrec.com
5/6
BRA2N60
Rev.D Nov.-2015
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:270±5℃
包装规格
Package Type
封装形式
使用说明
Temp.:270±5℃
Time:10±1 sec
/ Packaging SPEC.
套管包装
TO-262
时间:10±1 sec.
/ TUBE
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Reel
只/卷盘
Reels/Inner Box
卷盘/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Reel
Inner Box 盒
Outer Box 箱
50
20
1,000
5
5,000
532×31.4×5.5
555×164×50
575×290×180
/ Notices
http://www.fsbrec.com
6/6
Similar pages