POSEICO ATF414S12B Fast switching thyristor Datasheet

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POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FAST SWITCHING THYRISTOR
ATF414
FINAL SPECIFICATION
Repetitive voltage up to
Mean on-state current
Surge current
Turn-off time
1200
805
10
15
V
A
kA
µs
mag 06 - ISSUE : 08
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
1200
V
V
RSM
Non-repetitive peak reverse voltage
125
1300
V
V
DRM
Repetitive peak off-state voltage
125
1200
I
RRM
Repetitive peak reverse current
V=VRRM
125
75
mA
I
DRM
Repetitive peak off-state current
V=VDRM
125
75
mA
805
A
V
CONDUCTING
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
I
T (AV)
Mean on-state current
180° sin, 1 kHz, Th=55°C, double side cooled
I
TSM
Surge on-state current, non repetitive
sine wave, 10 ms
I² t
I² t
without reverse voltage
V
T
On-state voltage
On-state current =
25
2,4
V
V
T(TO)
Threshold voltage
125
1,50
V
T
On-state slope resistance
125
0,430
mohm
r
125
675
A
10
kA
500 x1E3
1400 A
A²s
SWITCHING
di/dt
Critical rate of rise of on-state current, min
From 75% VDRM up to 1200 A, gate 10V 5 ohm
125
500
A/µs
dv/dt
Critical rate of rise of off-state voltage, min
Linear ramp up to 75% of VDRM
125
600
V/µs
td
Gate controlled delay time, typical
VD=200V, gate source 20V, 10 ohm , tr=.5 µs
25
0,85
µs
tq
Circuit commutated turn-off time
125
15
µs
Q rr
Reverse recovery charge
120
µC
100
A
di/dt =
dV/dt =
60
A/µs, I= 1000
I = 1000
A
200 V/µs , up to
80%
di/dt =
60
A/µs, I= 1000
I = 1000
A
VR =
50
V
A
VDRM
A
125
I rr
Peak reverse recovery current
I
H
Holding current, typical
VD=5V, gate open circuit
25
mA
I
L
Latching current, typical
VD=12V, tp=30µs
25
mA
GATE
V
GT
Gate trigger voltage
VD=5V
25
3,5
V
I
GT
Gate trigger current
VD=5V
25
350
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0,25
V
V
FGM
Peak gate voltage (forward)
25
30
V
I
FGM
Peak gate current
25
10
A
V
RGM
Peak gate voltage (reverse)
P
GM
Peak gate power dissipation
P
G(AV)
Average gate power dissipation
Pulse width 100 µs
25
5
V
25
150
W
25
3
W
37
°C/kW
MOUNTING
R
th(j-h)
Thermal impedance, DC
T
j
Operating junction temperature
F
Junction to heatsink, double side cooled
Mounting force
Mass
-30 / 125
°C
11.0 / 13.0
kN
320
tq code
ORDERING INFORMATION : ATF414 S 12 B
tq code
standard specification
VDRM&VRRM/100
D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs
g
ATF414 FAST SWITCHING THYRISTOR
FINAL SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
mag 06 - ISSUE : 08
SWITCHING CHARACTERISTICS
REVERSE RECOVERY CHARGE
Tj = 125 °C
350
2000 A
1000 A
300
Qrr [µC]
250
500 A
200
150
100
50
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
REVERSE RECOVERY CURRENT
Tj = 125 °C
500
2000 A
400
1000 A
500 A
Irr [A]
300
200
100
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
ta = Irr / (di/dt)
tb = trr - ta
di/dt
IF
ta
Softness (s factor) s = tb / ta
Irr
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
tb
Vr
ATF414 FAST SWITCHING THYRISTOR
FINAL SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
mag 06 - ISSUE : 08
SURGE CHARACTERISTIC
Tj = 125 °C
3000
12
2500
10
2000
8
ITSM [kA]
On-state Current [A]
ON-STATE CHARACTERISTIC
Tj = 125 °C
1500
6
1000
4
500
2
0
0
0,6
1,1
1,6
2,1
2,6
1
On-state Voltage [V]
10
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
40
35
Zth j-h [°C/kW]
30
25
20
15
10
5
0
0,001
0,01
0,1
1
10
100
t[s]
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 µm.
In the interest of product improvement POSEICO S.p.A. reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
100
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