NP5002(R) thru NP5006(R) Naina Semiconductor Ltd. Press Fit Diode, 50A Features • • • • Low Leakage Low Forward Voltage Drop Low Cost High Surge Current Capability Mechanical Characteristics • • • • • Chip: Gpp Chip Encapsulation: Epoxy Sealed Lead: Plated Lead, Solderable Mounting: Press Fit Weight: 6.5 grams (approx.) PRESS-FIT DIODE Electrical Characteristics (TA = 250C unless otherwise specified) Parameter Maximum repetitive peak reverse voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum average forward output current @ TA = 1050C Peak forward surge current (8.3ms) single half sine-wave superimposed on rated load Maximum instantaneous forward voltage drop @ 100 A Maximum DC reverse TA = 250C current at rated DC TA = 1000C blocking voltage Typical Thermal Resistance Operating and storage temperature 1 Symbol NP5002(R) NP5004(R) NP5006(R) Units VRRM 200 400 600 V VRMS VDC 140 200 280 400 420 600 V V IF(AV) 50 A IFSM 600 A VF 1.1 V IR 5.0 µA 450 Rθ(j-c) TJ, TSTG 0.8 -65 to +175 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com o C/W o C Naina Semiconductor Ltd. NP5002(R) thru NP5006(R) Package Outline (All dimensions in mm) PACKAGE A PACKAGE B Ordering Table NP 1 50 2 02 3 R 4 1 – Press-fit Diode 2 – Current Rating = IF (AV) 3 – Voltage, VRRM (as per table) 4 – Polarity: > > None = Normal (Cathode to Base) (Red Color Epoxy) R = Reverse (Anode to Base) (Black Color Epoxy) 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com