74AHC1G125 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Description Pin Assignments The 74AHC1G125 is a single non-inverting buffer/bus driver (Top View) with a 3-state output. The output enters a high impedance state when a HIGH-level is applied to the output enable (OE) pin. supply range of 2.0V to 5.5V. NEW PRODUCT 5 Vcc OE 1 The device is designed for operation with a power A 2 4 Y GND 3 SOT25 / SOT353 Features Applications • Supply Voltage Range from 2.0V to 5.5V • General Purpose Logic • ± 8 mA Output Drive at 5.0V • Wide array of products such as: • CMOS low power consumption o PCs, networking, notebooks, netbooks, PDAs • Schmitt Trigger Action at All Inputs Make the Circuit o Computer peripherals, hard drives, CD/DVD ROM Tolerant for Slower Input Rise and Fall Time. o TV, DVD, DVR, set top box ESD Protection per JESD 22 o Phones, Personal Navigation / GPS o MP3 players ,Cameras, Video Recorders • • • o Exceeds 200-V Machine Model (A115-A) o Exceeds 2000-V Human Body Model (A114-A) o Exceeds 1000-V Charged Device Model (C101C) Latch-Up Exceeds 100mA per JESD 78, Class II SOT25 and SOT353: Assembled with “Green” Molding Compound (no Br, Sb) • Lead Free Finish / RoHS Compliant (Note 1) Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/products/lead_free.html. 74AHC1G125 Document number: DS35176 Rev. 1 - 2 1 of 9 www.diodes.com March 2011 © Diodes Incorporated 74AHC1G125 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Pin Descriptions NEW PRODUCT Pin Name Pin No. Description OE 1 Output Enable A GND Y Vcc 2 3 4 5 Data Input Ground Data Output Supply Voltage Logic Diagram OE 1 2 A 4 Y Function Table Inputs Output OE A Y L L H H L X H L Z 74AHC1G125 Document number: DS35176 Rev. 1 - 2 2 of 9 www.diodes.com March 2011 © Diodes Incorporated 74AHC1G125 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Absolute Maximum Ratings (Note 2) Symbol ESD HBM ESD CDM ESD MM NEW PRODUCT VCC Human Body Model ESD Protection Charged Device Model ESD Protection Machine Model ESD Protection Supply Voltage Range VI Input Voltage Range VO Voltage applied to output in high or low state Rating Unit 2 1 200 KV KV V -0.5 to 6.5 V -0.5 to 6.5 V -0.5 to VCC +0.5 V IIK Input Clamp Current VI<0 -20 mA IOK Output Clamp Current (VO < 0 or VO > VCC) ±20 mA ±25 mA 50 mA IO Continuous output current (VO = 0 to VCC) ICC Continuous current through VCC IGND Continuous current through GND -50 mA TJ Operating Junction Temperature -40 to 150 °C Storage Temperature -65 to 150 °C TSTG Notes: Description 2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be within recommend values. Recommended Operating Conditions (Note 3) Symbol Parameter VCC Operating Voltage VIH High-level Input Voltage VIL Low-level input voltage VI Input Voltage VO Output Voltage Min Max Unit 2 5.5 V VCC = 2V 1.5 VCC = 3V 2.1 VCC = 5.5V 3.85 VCC = 2V 0.5 VCC = 3V 0.9 VCC = 5.5V IOH IOL Δt/ΔV TA Notes: High-level output current Low-level output current Input transition rise or fall rate V V 1.65 0 5.5 0 V VCC V VCC = 2V -50 uA VCC = 3.3V ± 0.3V -4 VCC = 5V ± 0.5V -8 VCC = 2V 50 VCC = 5V ± 0.5V 4 VCC = 3V 8 VCC = 3.3V ± 0.3V 100 VCC = 5V ± 0.5V 20 Operating free-air temperature -40 125 mA uA mA ns/V ºC 3. Unused inputs should be held at VCC or Ground. 74AHC1G125 Document number: DS35176 Rev. 1 - 2 3 of 9 www.diodes.com March 2011 © Diodes Incorporated 74AHC1G125 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Electrical Characteristics Symbol Parameter Test Conditions High Level Output Voltage I = -4mA OH 2V 3V 4.5V 3V Min 1.9 2.9 4.4 2.58 IOH = -8mA 4.5V 3.94 IOH = -50μA NEW PRODUCT VOH VOL II Low Level Output Voltage Unit V 3.70 IOL = 4mA IOL = 8mA 4.5V 0.36 0.44 0.55 0 to 5.5V ± 0.1 ±1 ±2 μA 5.5V 0.25 2.5 10 μA 5.5V 1 10 40 μA 10 10 10 pF IOL = 50μA VO =0 to 5.5V ICC Supply Current Note: 3.8 -40ºC to 125ºC Min Max 1.9 2.9 4.4 2.40 0.1 0.1 0.1 0.55 Z State Leakage Current θJC -40ºC to 85ºC Min Max 1.9 2.9 4.4 2.48 0.1 0.1 0.1 0.44 IOZ θJA Max 0.1 0.1 0.1 0.36 VI = 5.5V or GND Input Capacitance Thermal Resistance Junction-toAmbient Thermal Resistance Junction-toCase 25ºC Typ. 2 3 4.5 2V 3V 4.5V 3V Input Current Ci VCC VI = 5.5V or GND IO=0 VI = VCC – or GND 5.5V 2.0 SOT25 195 (Note 4) SOT353 o C/W o C/W 430 SOT25 58 (Note 4) SOT353 V 155 4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 74AHC1G125 Document number: DS35176 Rev. 1 - 2 4 of 9 www.diodes.com March 2011 © Diodes Incorporated 74AHC1G125 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Switching Characteristics NEW PRODUCT VCC = 3.3V ± 0.3 (see Figure 1) Parameter From (Input) TO (OUTPUT) tpd A Y ten OE Y tdis OE Y Min 25ºC Typ. Max -40ºC to 85ºC Min Max -40ºC to 125ºC Min Max Unit CL=15pF 0.6 4.7 8.0 0.6 9.5 0.6 11.5 ns CL=50pF 0.6 6.6 11.5 0.6 13.0 0.6 14.5 ns CL=15pF 0.6 5.0 8.0 0.6 9.5 0.6 10.5 ns CL=50pF 0.6 6.9 11.5 0.6 13.0 0.6 14.5 ns CL=15pF 0.6 6.0 9.7 0.6 11.5 0.6 12.5 ns CL=50pF 0.6 8.3 13.2 0.6 15.0 0.6 16.5 ns Min 25ºC Typ. Max -40ºC to 85ºC Min Max CL=15pF 0.6 3.4 5.5 0.6 6.5 0.6 7.0 ns CL=50pF 0.6 4.8 7.5 0.6 8.5 0.6 9.5 ns CL=15pF 0.6 3.6 5.1 0.6 6.0 0.6 6.5 ns CL=50pF 0.6 6.5 11.4 0.6 13.0 0.6 14.5 ns CL=15pF 0.6 4.1 6.8 0.6 8.0 0.6 8.5 ns CL=50pF 0.6 5.7 8.8 0.6 10.0 0.6 11.0 ns VCC = 5V ± 0.5V (see Figure 1) Parameter From (Input) TO (OUTPUT) tpd A Y ten OE Y tdis OE Y -40ºC to 125ºC Min Max Unit Operating Characteristics TA = 25 ºC Parameter Cpd Power dissipation capacitance 74AHC1G125 Document number: DS35176 Rev. 1 - 2 Test Conditions VCC = 5 V Typ. Unit f = 1 MHz No Load 12 pF 5 of 9 www.diodes.com March 2011 © Diodes Incorporated 74AHC1G125 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Parameter Measurement Information Vcc Open GND RL=1 kΩ S1 Under Test CL NEW PRODUCT (see Note A) Inputs TEST S1 tPLH/tPHL Open tPLZ/tPZL Vload tPHZ/tPZH GND VM CL V∆ ≤3ns VCC/2 15pF 0.3V VCC ≤3ns VCC/2 15pF 0.3V 3.3V±0.3V VCC ≤3ns VCC/2 50pF 0.3V 5V±0.5V VCC ≤3ns VCC/2 50pF 0.3V VCC VI tr/tf 3.3V±0.3V VCC 5V±0.5V Voltage Waveform Pulse Duration Voltage Waveform Enable and Disable Times Low and High Level Enabling Voltage Waveform Propagation Delay Times Inverting and Non Inverting Outputs Figure 1. Load Circuit and Voltage Waveforms Notes: A. Includes test lead and test apparatus capacitance. B. All pulses are supplied at pulse repetition rate ≤ 1 MHz. C. Inputs are measured separately one transition per measurement. D. tPLZ and tPHZ are the same as tdis. E. tPZL and tPZH are the same as tEN. F. tPLH and tPHL are the same as tPD. 74AHC1G125 Document number: DS35176 Rev. 1 - 2 6 of 9 www.diodes.com March 2011 © Diodes Incorporated 74AHC1G125 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Ordering Information Function Logic Device 74 : Logic Prefix AHC : 2 to 5.5V Family 1G : One gate Device 74AHC1G125W5-7 74AHC1G125SE-7 Notes: Package 125 : 3-State Buffer OE-Low Package Code W5 SE Packing 7 : Tape & Reel W5 : SOT25 SE : SOT353 7” Tape and Reel Quantity Part Number Suffix 3000/Tape & Reel -7 3000/Tape & Reel -7 Packaging (Note 5) SOT25 SOT353 5. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Marking Information (Top View) 5 4 7 NEW PRODUCT 74 AHC1G 125 XX - 7 XX Y W X 1 2 3 XX : Identification code Y : Year 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week X : A~Z : Internal code Part Number Package Identification Code 74AHC1G125W5 74AHC1G125SE SOT25 SOT353 YY YY 74AHC1G125 Document number: DS35176 Rev. 1 - 2 7 of 9 www.diodes.com March 2011 © Diodes Incorporated 74AHC1G125 SINGLE BUFFER GATE WITH 3-STATE OUTPUT Package Outline Dimensions (All Dimensions in mm) (1) Package Type: SOT25 A NEW PRODUCT B C H K M N J L D SOT25 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75 0° 8° α ⎯ All Dimensions in mm (2) Package Type: SOT353 A B C H K J M D F 74AHC1G125 Document number: DS35176 Rev. 1 - 2 L SOT353 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm 8 of 9 www.diodes.com March 2011 © Diodes Incorporated 74AHC1G125 SINGLE BUFFER GATE WITH 3-STATE OUTPUT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com 74AHC1G125 Document number: DS35176 Rev. 1 - 2 9 of 9 www.diodes.com March 2011 © Diodes Incorporated