ETC 7P020FLB2401C15

PCMCIA Flash Memory Card
FLB Series
PCMCIA Flash Memory Card
2 MEGABYTE through 40 MEGABYTE (AMD based)
General Description
Features
WEDC’s PCMCIA Flash memory cards offer high
• Low cost High Density Linear Flash Card
density linear Flash solid state storage solutions for
• Supports 5V only systems
code and data storage, high performance disk
emulation and execute in place (XIP) applications in
•Based on AMD Flash Components
-low standby power without entering reset mode
-allows standard access from standby mode
mobile PC and dedicated (embedded) equipment.
Packaged in PCMCIA type I housing, each card
•Fast Read Performance
- 150ns Maximum Access Time
contains a connector, an array of Flash memories
packaged in TSOP packages and card control logic.
The card control logic provides the system interface
• x8/ x16 Data Interface
and controls the internal Flash memories. Combined
• High Performance Random Writes
- 10µs Typical Word Write Time
with file management software, such as Flash
Translation Layer (FTL), WEDC Flash cards provide
removable high-performance disk emulation.
• Automated Write and Erase Algorithms
- AMD Command Set
The WEDC FLA series is based on AMD Flash
• 100,000 Erase Cycles per Block
memories. The FLB series offers byte wide and word
wide
operation,
low
power
modes
and
Card
• 64K word symmetrical Block Architecture
Information Structure (CIS) for easy identification of
card characteristics.
• PC Card Standard Type I Form Factor
Note:
Standard options include attribute memory. Cards
without attribute memory are available. Cards are also
available with or without a hardware write protect
switch.
Architecture Overview
WEDC’s FLB series is designed to support from two to twenty (see Block diagram) 8Mb or 16MB components,
providing a wide range of density options. Cards are based on the Am29F080 (8Mb) or Am29F016 (16Mb) devices
for 5V only applications. Devices codes for the Am29F080 and Am29F016 are D5H and ADH respectively.
Systems should be able to recognize both codes. Cards utilizing the 8Mb components provide densities ranging
from 2MB to 20MB in 2MB increments, cards utilizing 16Mb components provide densities ranging from 4MB to
40MB in 4MB increments.
In support of the PC Card 95 standard for word wide access devices are paired. Therefore, the Flash array is
structured in 64K word blocks. Write, read and block erase operations can be performed as either a word or byte
wide operation . By multiplexing A0, CE1# and CE2#, 8-bit hosts can access all data on data lines DQ0 - DQ7. The
FLB series cards conform with the PC Card Standard (formerly PCMCIA) and supported JEIDA, providing
electrical and physical compatibility. The PC Card form factor offers an industry standard pinout and mechanical
outline, allowing density upgrades without system design changes.
WEDC’s standard cards are shipped with WEDC’s silkscreen design. Cards are also available with blank housings
(no silkscreen). The blank housings are available in both a recessed (for label) and flat housing. Please contact
WEDC sales representative for further information on Custom artwork.
August 2000 Rev. 3 - ECO #13126
1
PC Card Products
PCMCIA Flash Memory Card
FLB Series
Block Diagram
Device type Manuf ID Device ID
Am28F080
01H
D5H
Am28F016
01H
ADH
CSn
Device Pair (N/2 - 1)
Device (N-1)
Device (N-2)
Array
Address
Bus
ADDRESS
BUFFER
ADDRESS BUS
A1-A25
Control
Address
Bus
M Res
WL#
RL#
WH#
RH#
Device 3
Device Pair 0
Device 2
CE2#
CE1#
DATA
BUS
Q8-Q15
DATA
BUS
Q0-Q7
CS0
Q2
Q0
Ctrl
REG#
A0
WP
At/Reg enable
CS0
Device 0
Device 1
WH# RH#
CS1
WE#
OE#
Qn
CSn
Device Pair 1
Vcc
Control Logic
PCMCIA Interface
WL# RL#
0000h
attrib. mem
CIS
EEPROM 2kB
Vcc
control
Q0-Q7
Vcc
I/O buffer
DATA
BUS
D8-D15
August 2000 Rev. 3 - ECO #13126
DATA
BUS
D0-D7
2
PC Card Products
PCMCIA Flash Memory Card
FLB Series
Pinout
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Signal name I/O
Function
Active
GND
Ground
DQ3
I/O
Data bit 3
DQ4
I/O
Data bit 4
DQ5
I/O
Data bit 5
DQ6
I/O
Data bit 6
DQ7
I/O
Data bit 7
CE1#
I
Card enable 1
LOW
A10
I
Address bit 10
OE#
I
Output enable LOW
A11
I
Address bit 11
A9
I
Address bit 9
A8
I
Address bit 8
A13
I
Address bit 13
A14
I
Address bit 14
WE#
I
Write Enable
LOW
RDY/BSY# O
Ready/Busy
LOW
Vcc
Supply Voltage
Vpp1
Prog. Voltage
N.C.
A16
I
Address bit 16
A15
I
Address bit 15
A12
I
Address bit 12
A7
I
Address bit 7
A6
I
Address bit 6
A5
I
Address bit 5
A4
I
Address bit 4
A3
I
Address bit 3
A2
I
Address bit 2
A1
I
Address bit 1
A0
I
Address bit 0
DQ0
I/O
Data bit 0
DQ1
I/O
Data bit 1
DQ2
I/O
Data bit 2
WP
O
Write Potect
HIGH
GND
Ground
Pin
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
Signal name
GND
CD1#
DQ11
DQ12
DQ13
DQ14
DQ15
CE2#
VS1
RFU
RFU
A17
A18
A19
A20
A21
Vcc
Vpp2
A22
A23
A24
A25
VS2
RST
Wait#
RFU
REG#
BVD2
BVD1
DQ8
DQ9
DQ10
CD2#
GND
I/O
O
I/O
I/O
I/O
I/O
I
I
O
I
I
I
I
I
I
I
I
I
O
I
O
I
O
O
I/O
I/O
O
O
Function
Ground
Card Detect 1
Data bit 11
Data bit 12
Data bit 13
Data bit 14
Data bit 15
Card Enable 2
Voltage Sense 1
Reserved
Reserved
Address bit 17
Address bit 18
Address bit 19
Address bit 20
Address bit 21
Supply Voltage
Prog. Voltage
Address bit 22
Address bit 23
Address bit 24
Address bit 25
Voltage Sense 2
Card Reset
Extended Bus cycle
Reserved
Attrib Mem Select
Bat. Volt. Detect 2
Bat. Volt. Detect 1
Data bit 8
Data bit 9
Data bit 10
Card Detect 2
Ground
Active
LOW
LOW
N.C.
2MB(3)
4MB(3)
N.C.
8MB(3)
16MB(3)
32MB(3)
64MB(3)
N.C.
HIGH
LOW(2)
(2)
(2)
LOW
Notes:
1. RDY/BSY is an open drain output, external pull-up resistor is required.
2. Wait#, BVD1 and BVD2 are driven high for compatibility.
3. Shows density for which specified address bit is MSB.
Higher order address bits are no connects (ie 4MB A21 is MSB A22 - A25 are NC).
Mechanical
.063
3.370
.039
2.126
.039
.400
.130
MAX.
August 2000 Rev. 3 - ECO #13126
3
PC Card Products
PCMCIA Flash Memory Card
FLB Series
Card Signal Description
Symbol
A0 - A25
Type
INPUT
DQ0 - DQ15
INPUT/OUTPUT
CE1#, CE2#
INPUT
OE#
INPUT
WE#
INPUT
RDY/BSY#
OUTPUT
CD1#, CD2#
OUTPUT
WP
OUTPUT
VPP1, VPP2
N.C.
VCC
GND
REG#
INPUT
RST
INPUT
WAIT#
OUTPUT
BVD1, BVD2
OUTPUT
VS1, VS2
OUTPUT
RFU
N.C.
August 2000 Rev. 3 - ECO #13126
Name and Function
ADDRESS INPUTS: A0 through A25 enable direct addressing of
up to 64MB of memory on the card. Signal A0 is not used in word
access mode. A25 is the most significant bit
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the
bi-directional databus. DQ15 is the MSB.
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2#
enables odd byte accesses. Multiplexing A0, CE1# and CE2# allows
8-bit hosts to access all data on DQ0 - DQ7.
OUTPUT ENABLE: Active low signal gating read data from the
memory card.
WRITE ENABLE: Active low signal gating write data to the
memory card.
READY/BUSY OUTPUT: Indicates status of internally timed erase
or program algorithms. A high output indicates that the card is ready
to accept accesses. A low output indicates that one or more devices
in the memory card are busy with internally timed erase or write
activities.
CARD DETECT 1 and 2: Provide card insertion detection. These
signals are connected to ground internally on the memory card. The
host socket interface circuitry shall supply 10K-ohm or larger pull-up
resistors on these signal pins.
WRITE PROTECT: Write protect reflects the status of the Write
Protect switch on the memory card. WP set to high = write protected,
providing internal hardware write lockout to the Flash array.
If card does not include optional write protect switch, this signal will
be pulled low internally indicating write protect = "off".
PROGRAM/ERASE POWER SUPPLY: Not connected for 5V
only card.
CARD POWER SUPPLY: 5.0V for all internal circuitry.
GROUND: for all internal circuitry.
ATTRIBUTE MEMORY SELECT : provides access to Flash
memory card registers and Card Information Structure in the
Attribute Memory Plane.
RESET: Active high signal for placing card in Power-on default
state. Reset can be used as a Power-Down signal for the memory
array.
WAIT: This signal is pulled high internally for compatibility. No
wait states are generated.
BATTERY VOLTAGE DETECT: These signals are pulled high to
maintain SRAM card compatibility.
VOLTAGE SENSE: Notifies the host socket of the card's VCC
requirements. VS1 and VS2 are open to indicate a 5V card has been
inserted.
RESERVED FOR FUTURE USE
NO INTERNAL CONNECTION TO CARD: pin may be driven
or left floating
4
PC Card Products
PCMCIA Flash Memory Card
FLB Series
Absolute Maximum Ratings (1)
Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to VSS
VCC supply Voltage relative to VSS
Notes:
(1) During transitions, inputs may undershoot
to -2.0V or overshoot to VCC +2.0V for periods
less than 20ns.
0°C to +60 °C
-40°C to +85 °C **
(2) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
-30°C to +80 °C
-40°C to +85 °C **
-0.5V to VCC+0.5V (1)
-0.5V to +7.0V
** Advanced information.
DC Characteristics (1)
Sym
Parameter
ICCR
VCC Read Current
ICCW
VCC Program Current
ICCE
VCC Erase Current
ICCS
(CMOS)
VCC Standby Current
Density
(Mbytes)
All
Notes
(4)
Max
Units
75
mA
All
150
mA
All
150
mA
230
µA
2MB
(4MB)
Typ
2,3
80
Test Conditions
VCC = VCCmax
tcycle = 150ns,CMOS levels
VCC = VCCmax
Control Signals = VCC
Reset = VSS, CMOS levels
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Word wide operations.
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.
3. ICCD and ICCS are specified for lowest density card for each component type (2MB for 8Mb components and
4MB for 16Mb components) This represents a single pair of devices. For higher densities multiply the number of device
pairs by the specified current in the table. For example a 40MB card will use 10 device pairs of 16Mb components.
The maximum ICCD will be 10 x 40µA = 400µA. The maximum ICCS will be 10 x 230µA = 2.3mA.
4. Typical: VCC = 5V, T = +25°C.
Symbol
Parameter
Notes
Min
Max
Units
Test Conditions
ILI
Input Leakage Current
1
±20
µA
VCC = VCCMAX
Vin =VCC or VSS
ILO
Output Leakage Current
1
±20
µA
VCC = VCCMAX
Vout =VCC or VSS
VIL
Input Low Voltage
1
0
0.8
V
VIH
Input High Voltage
1
0.7VCC
VCC+0.5
V
VOL
Output Low Voltage
1
0.4
V
IOL = 3.2mA
VOH
Output High Voltage
1
VCC-0.4
VCC
V
IOH = -2.0mA
VLKO
VCC Erase/Program
Lock Voltage
1
2.0
V
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to
internal pull-up resistors. Leakage currents on RST will be <150µA when VIN=VCC due to internal pull-down resistor.
August 2000 Rev. 3 - ECO #13126
5
PC Card Products
PCMCIA Flash Memory Card
FLB Series
AC Characteristics
Read Timing Parameters
150ns
SYM
(PCMCIA)
tC(R)
Parameter
Min
ta(A)
Address Access Time
150
ns
ta(CE)
Card Enable Access Time
150
ns
ta(OE)
Output Enable Access Time
75
ns
tsu(A)
Address Setup Time
20
ns
tsu(CE)
Card Enable Setup Time
0
ns
th(A)
Address Hold Time
20
ns
th(CE)
Card Enable Hold Time
20
ns
tv(A)
Output Hold from Address Change
0
ns
tdis(CE)
Output Disable Time from CE#
75
ns
tdis(OE)
Output Disable Time from OE#
75
ns
ten(CE)
Output Enable Time from CE#
5
ns
ten(OE)
Output Enable Time from OE#
5
ns
Read Cycle Time
Max
Unit
150
ns
Note: AC timing diagrams and characteristics are guaranteed
to meet or exceed PCMCIA 2.1 specifications.
Read Timing Diagram
tc(R )
th (A )
ta (A )
A [2 5::0], /R E G
tv(A )
ta(C E )
tsu(C E )
/C E 1, /C E 2
NOTE 1
NOTE 1
tsu(A )
ta(O E )
th(C E )
tdis(C E )
/O E
tdis(O E )
ten(O E )
D [1 5::0]
D A TA V A LID
Note: Signal may be high or low in this area.
August 2000 Rev. 3 - ECO #13126
6
PC Card Products
PCMCIA Flash Memory Card
FLB Series
Write Timing Parameters
150ns
SYM
(PCMCIA)
tCW
Parameter
Min
Max
Unit
Write Cycle Time
150
ns
tw(WE)
Write Pulse Width
80
ns
tsu(A)
Address Setup Time
20
ns
tsu(A-WEH)
Address Setup Time for WE#
100
ns
tsu(CE-WEH)
Card Enable Setup Time for WE#
100
ns
tsu(D-WEH)
Data Setup Time for WE#
50
ns
th(D)
Data Hold Time
20
ns
trec(WE)
Write Recover Time
20
ns
tdis(WE)
Output Disable Time from WE#
75
ns
tdis(OE)
Output Disable Time from OE#
75
ns
ten(WE)
Output Enable Time from WE#
5
ns
ten(OE)
Output Enable Time from OE#
5
ns
tsu(OE-WE)
Output Enable Setup from WE#
10
ns
th(OE-WE)
Output Enable Hold from WE#
10
ns
tsu(CE)
Card Enable Setup Time from OE#
0
ns
th(CE)
Card Enable Hold Time
20
ns
Note: AC timing diagrams and characteristics are guaranteed to
meet or exceed PCMCIA 2.1 specifications.
Write Timing Diagram
tc (W )
A [ 2 5 :: 0 ], / R E G
ts u ( A - W E H )
tre c (W E )
ts u ( C E - W E H )
th (C E )
ts u (C E )
/C E 1 , /C E 2
NOTE 1
NO TE 1
/O E
tw (W E )
ts u ( A )
th (O E -W E )
/W E
th ( D )
ts u (O E -W E )
D [ 1 5 : :0 ] ( D in )
ts u (D -W E H )
NO TE 2
D A T A IN P U T
t d is ( W E )
t d is ( O E )
te n (O E )
te n (W E )
D [ 1 5 ::0 ] ( D o u t )
NO TE 2
Notes:
1. Signal may be high or low in this area
2. When the data I/O pins are in the output state, no signals shall be applied
to the data pins (D15 - D0) by the host system.
August 2000 Rev. 3 - ECO #13126
7
PC Card Products
PCMCIA Flash Memory Card
FLB Series
Data Write and Erase Performance (1,3)
VCC = 5V ± 5%, TA = 0°C to + 60°C
Typ(1)
Max
2,4
8µs
3ms
Block Program Time
2
0.5
Block Erase Time
2
1.1
SYM
Parameter
Notes
tWHQV1
tEHQV1
tWHQV2
tEHQV2
Word/Byte Program time
Min
Units
Test Conditions
2.1
sec
Word Program Mode
10
sec
Notes:
1. Typical: Nominal voltages and TA = 25°C.
2. Excludes system overhead.
3. Valid for all speed options.
4. To maximize system performance RDY/BSY# signal should be polled.
August 2000 Rev. 3 - ECO #13126
8
PC Card Products
PCMCIA Flash Memory Card
FLB Series
PRODUCT MARKING
WED 7P016FLB2600C15 C995 9915
EDI
Date code
Lot code / trace number
Part number
Company Name
Note:
Some products are currently marked with our pre-merger company name/acronym (EDI). During our
transition period, some products will also be marked with our new company name/acronym (WED).
Starting October 2000 all PCMCIA products will be marked only with the WED prefix.
PART NUMBERING
7 P 016 FLB26 00 C 15
Card access time
15
25
150ns
250ns
Temperature range
C Commercial 0°C to +70°C
I Industrial
-40°C to +85°C
Packaging option
00
Standard, type 1
Card family and version
- See Card Family and Version Info. for details (next page)
Card capacity
016
16MB
PC card
P
R
Standard PCMCIA
Ruggedized PCMCIA
Card technology
7
8
August 2000 Rev. 3 - ECO #13126
FLASH
SRAM
9
PC Card Products
PCMCIA Flash Memory Card
FLB Series
Card Family and Version Information
FLB 21-24
Based on Am29F016 for 5V only applications
FLB21
FLB22
FLB23
FLB24
No Attribute Memory, no Write Protect
With Attribute Memory, no Write Protect
No Attribute Memory, with Write Protect
With Attribute Memory, with Write Protect
Example P/N 7P XXX FLB 22 SS T ZZ
FLB 25-28
Based on Am29F080 for 5V only applications
FLB25
FLB26
FLB27
FLB28
No Attribute Memory, no Write Protect
With Attribute Memory, no Write Protect
No Attribute Memory, with Write Protect
With Attribute Memory, with Write Protect
Example P/N 7P XXX FLB 26 SS T ZZ
Ordering Information
7P XXX FLBYY SS T ZZ
where
XXX:
002 1)
004
006 1)
008
010 1)
012
014 1)
016
018 1)
020
024 2)
028 2)
032 2)
036 2)
040 2)
2MB
4MB
6MB
8MB
10MB
12MB
14MB
16MB
18MB
20MB
24MB
28MB
32MB
36MB
40MB
1)
2)
FLBYY:
available only for FLB26
available only for FLB22
Card Version (See Card Family and Version Information)
SS:
00
01
02
WEDC Silkscreen
Blank Housing, Type I
Blank Housing, Type I Recessed
T:
C
I**
Commercial
Industrial
15
150ns
ZZ:
Notes: Options without attribute memory and with hardware write protect switch are available.
** Denotes advanced information.
August 2000 Rev. 3 - ECO #13126
10
PC Card Products
PCMCIA Flash Memory Card
FLB Series
CIS Information for FLB Series Cards
Address
00H
02H
Value
01H
03H
04H
06H
53H
0EH
1EH
2EH
3EH
4EH
5EH
6EH
7EH
8EH
9EH
FFH
18H
02H
01H
ADH
17H
03H
42H
01H
FFH
1EH
06H
02H
11H
01H
01H
01H
01H
08H
0AH
0CH
0EH
10H
12H
14H
16H
18H
1AH
1CH
1EH
20H
22H
24H
26H
28H
2AH
2CH
2EH
30H
32H
20H
04H
F6H
01H
34H
00H
36H
38H
3AH
3CH
3EH
00H
15H
47H
04H
01H
Description
CISTPL_DEVICE
TPL_LINK
FLASH = 150ns (device
writable)
CARD SIZE: 4MB
8MB
12MB
16MB
20MB
24MB
28MB
32MB
36MB
40MB
END OF DEVICE
CISTPL_JEDEC_C
TPL_LINK
AMD - ID
29F016B - ID
CISTPL_DEVICE_A
TPL_LINK
EEPROM - 200ns
Device Size = 2KBytes
END OF TUPLE
CISTPL_DEVICEGEO
TPL_LINK
DGTPL_BUS
DGTPL_EBS
DGTPL_RBS
DGTPL_WBS
DGTPL_PART
FLASH DEVICE
NON-INTERLEAVED
CISTPL_MANFID
TPL_LINK(04H)
EDITPLMID_MANF: LSB
EDI PLMID_MANF: MSB
LSB: Numb er Not
Assign.
MSB: Numb er Not
Assign.
CISTPL_VERS1
TPL_LINK
TPLLV1_MAJOR
TPLLV1_MINOR
August 2000 Rev. 3 - ECO #13126
Address
40H
42H
44H
46H
48H
4AH
4CH
4EH
50H
52H
54H
56H
58H
5AH
5CH
5EH
60H
62H
64H
66H
68H
6AH
6CH
6EH
70H
72H
74H
76H
78H
7AH
7CH
7EH
80H
82H
84H
86H
Value Description
E
45H
D
44H
49H
37H
50H
30H
1)
1)
46H
4CH
42H
32H
2)
2DH
2DH
2DH
31H
35H
20H
00H
43H
4FH
50H
59H
52H
49H
47H
48H
54H
20H
45H
4CH
45E
43H
54H
52H
I
7
P
0
x
x
F
L
B
2
x
1
5
SPACE
END TEXT
C
O
P
Y
R
I
G
H
T
SPACE
E
L
E
C
T
R
88H
4FH
O
8AH
8CH
8EH
90H
92H
4EH
49H
43H
20H
44H
N
I
C
SPACE
D
11
Address
94H
96H
98H
9AH
9CH
9EH
A0H
A2H
A4H
A6H
A8H
AAH
ACH
AEH
B0H
B2H
B4H
B6H
B8H
BAH
BCH
BEH
C0H
C2H
C4H
C6H
C8H
Value Description
E
45H
S
53H
I
49H
G
47H
N
4EH
S
53H
SPACE
20H
I
49H
N
4EH
C
43H
O
4FH
R
52H
P
50H
O
4FH
R
52H
A
41H
T
54H
E
45H
D
44H
SPACE
20H
END TEXT
00H
1
31H
9
39H
9
39H
7
37H
END TEXT
00H
FFH END OF LIST
1)
Address
4CH
4EH
Value
Description
30
0
31
1
32
2
33
3
34
4
30
0
32
2
34
4
36
6
38
8
32
2
34
4
36
6
38
8
2)
58H
PC Card Products
PCMCIA Flash Memory Card
FLB Series
Revision History
Date of revision
23-Dec-98
27-May-99
30-May-00
1-Aug-00
rev
0
1
2
3
Description
Initial release
Logo change
Added Page 9, Added top of page 10
Corrected Timing Errors, pgs. 6 & 7
White Electronic Designs Corporation
One Research Drive, Westborough, MA 01581, USA
tel:
(508) 366 5151
fax:
(508) 836 4850
www.whiteedc.com
August 2000 Rev. 3 - ECO #13126
12
PC Card Products