MICROCHIP 93AA66X/SN

Not recommended for new designs –
Please use 93AA46C, 93AA56C or
93AA66C.
93AA46/56/66
1K/2K/4K 1.8V Microwire Serial EEPROM
Features:
Package Types
+70°C
-40°C to
+85°C
1
8
V CC
CLK
2
7
NU
DI
3
6
ORG
DO
4
5
V SS
CS
1
8
V CC
CLK
2
7
NU
DI
3
6
ORG
DO
4
5
V SS
NU
1
8
ORG
Vcc
2
7
Vss
CS
3
6
DO
CLK
4
5
DI
SOIC
SOIC
93AA46X
93AA56X
93AA66X
- Industrial (I):
0°C to
CS
93AA46
93AA56
93AA66
- Commercial (C):
PDIP
93AA46
93AA56
93AA66
• Single supply with programming operation down
to 1.8V
• Low-power CMOS technology:
- 70 µA typical active read current at 1.8V
- 2 µA typical standby current at 1.8V
• ORG pin selectable memory configuration:
- 128 x 8- or 64 x 16-bit organization (93AA46)
- 256 x 8- or 128 x 16-bit organization
(93AA56)
- 512 x 8 or 256 x 16-bit organization (93AA66)
• Self-timed erase and write cycles
(including auto-erase)
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device status signal during erase/write cycles
• Sequential read function
• 1,000,000 E/W cycles ensured
• Data retention > 200 years
• 8-pin PDIP/SOIC
(SOIC in JEDEC and EIAJ standards)
• Temperature ranges supported:
Description:
The Microchip Technology Inc. 93AA46/56/66 are 1K,
2K and 4K low voltage serial Electrically Erasable
PROMs. The device memory is configured as x8 or x16
bits depending on the ORG pin setup. Advanced
CMOS technology makes these devices ideal for low
power nonvolatile memory applications. The 93AA
Series is available in standard 8-pin PDIP and surface
mount SOIC packages. The rotated pin-out 93AA46X/
56X/66X are offered in the “SN” package only.
Block Diagram
VCC VSS
Memory
Array
Address
Decoder
Address
Counter
Data
Register
Output
Buffer
DO
DI
 2004 Microchip Technology Inc.
ORG
CS
Mode
Decode
Logic
CLK
Clock
Generator
DS20067J-page 1
93AA46/56/66
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings(†)
VCC .............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied ................................................................................................-40°C to +125°C
Soldering temperature of leads (10 seconds) .......................................................................................................+300°C
ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DS20067J-page 2
 2004 Microchip Technology Inc.
93AA46/56/66
TABLE 1-1:
DC AND AC ELECTRICAL CHARACTERISTICS
VCC = +1.8V to +5.5V
Commercial (C): TA = 0°C to +70°C
Industrial (I):
TA = -40°C to +85°C
Parameter
Symbol
High-level input voltage
Min
Typ
Max
Units
Conditions
VIH1
2.0
—
VCC+1
V
VCC ≥ 2.7V
VIH2
0.7 VCC
—
VCC+1
V
VCC < 2.7V
VIL1
-0.3
—
0.8
V
VCC ≥ 2.7V
VIL2
-0.3
—
0.2 VCC
V
VCC < 2.7V
VOL1
—
—
0.4
V
IOL = 2.1 mA; VCC = 4.5V
VOL2
—
—
0.2
V
IOL = 100µA; VCC = 1.8V
VOH1
2.4
—
—
V
IOH = -400 µA; VCC = 4.5V
VOH2
VCC-0.2
—
—
V
IOH = -100 µA; VCC = 1.8V
Input leakage current
ILI
-10
—
10
µA
VIN = 0.1V to VCC
Output leakage current
ILO
-10
—
10
µA
VOUT = 0.1V to VCC
Pin capacitance
(all inputs/outputs)
CIN, COUT
—
—
7
pF
VIN/VOUT = 0V (Note 1 & 2)
TA = +25°C, FCLK = 1 MHz
Operating current
ICC write
—
—
3
mA
FCLK = 2 MHz; VCC=5.5V
(Note 2)
ICC read
—
—
1
500
mA
µA
µA
FCLK = 2 MHz; VCC = 5.5V
FCLK = 1 MHz; VCC = 3.0V
FCLK = 1 MHz; VCC = 1.8V
100
30
µA
µA
µA
CLK = CS = 0V; VCC = 5.5V
CLK = CS = 0V; VCC = 3.0V
CLK = CS = 0V; VCC = 1.8V
ORG, DI = VSS or VCC
2
1
MHz
MHz
Low-level input voltage
Low-level output voltage
High-level output voltage
70
Standby current
ICCS
2
VCC ≥ 4.5V
VCC < 4.5V
Clock frequency
FCLK
Clock high time
TCKH
250
ns
Clock low time
TCKL
250
ns
Chip select setup time
TCSS
50
ns
Relative to CLK
Relative to CLK
Chip select hold time
TCSH
0
ns
Chip select low time
TCSL
250
ns
Data input setup time
TDIS
100
ns
Relative to CLK
Data input hold time
TDIH
100
Data output delay time
Data output disable time
ns
Relative to CLK
TPD
400
ns
CL = 100 pF
TCZ
100
ns
CL = 100 pF (Note 2)
Status valid time
TSV
500
ns
CL = 100 pF
Program cycle time
TWC
4
10
ms
Erase/Write mode
TEC
8
15
ms
ERAL mode (Vcc = 5V ± 10%)
TWL
16
30
ms
WRAL mode (Vcc = 5V ± 10%)
—
1M
—
25°C, Vcc = 5.0V, Block mode
(Note 3)
Endurance
Note 1:
2:
3:
—
1M
This parameter is tested at TA = 25°C and FCLK = 1 MHz.
This parameter is periodically sampled and not 100% tested.
This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from Microchip’s web site.
 2004 Microchip Technology Inc.
DS20067J-page 3
93AA46/56/66
TABLE 1-2:
INSTRUCTION SET FOR 93AA46: ORG = 1 (X 16 ORGANIZATION)
SB
Opcode
Address
Data In
Data Out
Req. CLK
Cycles
READ
1
10
A5 A4 A3 A2 A1 A0
—
D15 - D0
25
EWEN
1
00
1 1 X X X X
—
High-Z
9
ERASE
1
11
A5 A4 A3 A2 A1 A0
—
(RDY/BSY)
9
ERAL
1
00
1 0 X X X X
—
(RDY/BSY)
9
WRITE
1
01
A5 A4 A3 A2 A1 A0
D15 - D0
(RDY/BSY)
25
WRAL
1
00
0 1 X X X X
D15 - D0
(RDY/BSY)
25
EWDS
1
00
0 0 X X X X
—
High-Z
9
Instruction
TABLE 1-3:
INSTRUCTION SET FOR 93AA46: ORG = 0 (X 8 ORGANIZATION)
SB
Opcode
Address
Data In
Data Out
Req. CLK
Cycles
READ
1
10
A6 A5 A4 A3 A2 A1 A0
—
D7 - D0
18
EWEN
1
00
1 1 X X X X X
—
High-Z
10
ERASE
1
11
A6 A5 A4 A3 A2 A1 A0
—
(RDY/BSY)
10
ERAL
1
00
1 0 X X X X X
—
(RDY/BSY)
10
WRITE
1
01
A6 A5 A4 A3 A2 A1 A0
D7 - D0
(RDY/BSY)
18
Instruction
WRAL
1
00
0 1 X X X X X
D7 - D0
(RDY/BSY)
18
EWDS
1
00
0 0 X X X X X
—
High-Z
10
TABLE 1-4:
INSTRUCTION SET FOR 93AA56: ORG = 1 (X 16 ORGANIZATION)
SB
Opcode
Address
Data In
Data Out
Req. CLK
Cycles
READ
1
10
X A6 A5 A4 A3 A2 A1 A0
—
D15 - D0
27
EWEN
1
00
1 1 X X X X X X
—
High-Z
11
ERASE
1
11
X A6 A5 A4 A3 A2 A1 A0
—
(RDY/BSY)
11
ERAL
1
00
1 0 X X X X X X
—
(RDY/BSY)
11
WRITE
1
01
X A6 A5 A4 A3 A2 A1 A0
D15 - D0
(RDY/BSY)
27
Instruction
WRAL
1
00
0 1 X X X X X X
D15 - D0
(RDY/BSY)
27
EWDS
1
00
0 0 X X X X X X
—
High-Z
11
TABLE 1-5:
INSTRUCTION SET FOR 93AA56: ORG = 0 (X 8 ORGANIZATION)
SB
Opcode
Address
Data In
Data Out
Req. CLK
Cycles
READ
1
10
X A7 A6 A5 A4 A3 A2 A1 A0
—
D7 - D0
20
EWEN
1
00
1 1 X X X X X X X
—
High-Z
12
ERASE
1
11
X A7 A6 A5 A4 A3 A2 A1 A0
—
(RDY/BSY)
12
ERAL
1
00
1 0 X X X X X X X
—
(RDY/BSY)
12
WRITE
1
01
X A7 A6 A5 A4 A3 A2 A1 A0
D7 - D0
(RDY/BSY)
20
WRAL
1
00
0 1 X X X X X X X
D7 - D0
(RDY/BSY)
20
EWDS
1
00
0 0 X X X X X X X
—
High-Z
12
Instruction
DS20067J-page 4
 2004 Microchip Technology Inc.
93AA46/56/66
TABLE 1-6:
INSTRUCTION SET FOR 93AA66: ORG = 1 (X 16 ORGANIZATION)
SB
Opcode
Address
Data In
Data Out
Req. CLK
Cycles
READ
1
10
A7 A6 A5 A4 A3 A2 A1 A0
—
D15 - D0
27
EWEN
1
00
1 1 X X X X X X
—
High-Z
11
ERASE
1
11
A7 A6 A5 A4 A3 A2 A1 A0
—
(RDY/BSY)
11
ERAL
1
00
1 0 X X X X X X
—
(RDY/BSY)
11
WRITE
1
01
A7 A6 A5 A4 A3 A2 A1 A0
D15 - D0
(RDY/BSY)
27
Instruction
WRAL
1
00
0 1 X X X X X X
D15 - D0
(RDY/BSY)
27
EWDS
1
00
0 0 X X X X X X
—
High-Z
11
TABLE 1-7:
INSTRUCTION SET FOR 93AA66: ORG = 0 (X 8 ORGANIZATION)
Data In
Data Out
Req. CLK
Cycles
A8 A7 A6 A5 A4 A3 A2 A1 A0
—
D7 - D0
20
1 1 X X X X X X X
—
High-Z
12
11
A8 A7 A6 A5 A4 A3 A2 A1 A0
—
(RDY/BSY)
12
1
00
1 0 X X X X X X X
—
(RDY/BSY)
12
WRITE
1
01
A8 A7 A6 A5 A4 A3 A2 A1 A0
D7 - D0
(RDY/BSY)
20
WRAL
1
00
0 1 X X X X X X X
D7 - D0
(RDY/BSY)
20
EWDS
1
00
0 0 X X X X X X X
—
High-Z
12
Instruction
SB
Opcode
Address
READ
1
10
EWEN
1
00
ERASE
1
ERAL
 2004 Microchip Technology Inc.
DS20067J-page 5
93AA46/56/66
2.0
FUNCTIONAL DESCRIPTION
When the ORG pin is connected to VCC, the (x16)
organization is selected. When it is connected to
ground, the (x8) organization is selected. Instructions,
addresses and write data are clocked into the DI pin on
the rising edge of the clock (CLK). The DO pin is normally held in a high-Z state except when reading data
from the device, or when checking the Ready/Busy
status during a programming operation. The Ready/
Busy status can be verified during an erase/write
operation by polling the DO pin; DO low indicates that
programming is still in progress, while DO high
indicates the device is ready. The DO will enter the
high-Z state on the falling edge of the CS.
2.1
Start Condition
The Start bit is detected by the device if CS and DI are
both high with respect to the positive edge of CLK for
the first time.
Before a Start condition is detected, CS, CLK and DI
may change in any combination (except to that of a
Start condition), without resulting in any device operation (read, write, erase, EWEN, EWDS, ERAL, and
WRAL). As soon as CS is high, the device is no longer
in the Standby mode.
An instruction following a Start condition will only be
executed if the required amount of opcode, address
and data bits for any particular instruction is clocked in.
After execution of an instruction (i.e., clock in or out of
the last required address or data bit) CLK and DI
become “don't care” bits until a new Start condition is
detected.
2.2
DI/DO
It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a “bus conflict” to occur during the “dummy zero”
that precedes the read operation, if A0 is a logic high
level. Under such a condition the voltage level seen at
Data Out is undefined and will depend upon the relative
impedances of Data Out and the signal source driving
A0. The higher the current sourcing capability of A0,
the higher the voltage at the Data Out pin.
2.3
Data Protection
The EWEN and EWDS commands give additional
protection against accidentally programming during
normal operation.
After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before any ERASE or WRITE instruction can
be executed.
2.4
Read
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 16-bit (x16 organization) or 8 bit
(x8 organization) output string. The output data bits will
toggle on the rising edge of the CLK and are stable
after the specified time delay (TPD). Sequential read is
possible when CS is held high. The memory data will
automatically cycle to the next register and output
sequentially.
2.5
Erase/Write Enable and Disable
(EWEN, EWDS)
The 93AA46/56/66 power up in the Erase/Write Disable
(EWDS) state.
All programming modes must be
preceded by an Erase/Write Enable (EWEN) instruction.
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed or
VCC is removed from the device. To protect against
accidental data disturb, the EWDS instruction can be used
to disable all erase/write functions and should follow all
programming operations. Execution of a READ instruction
is independent of both the EWEN and EWDS instructions.
2.6
Erase
The ERASE instruction forces all data bits of the
specified address to the logical “1” state. CS is brought
low following the loading of the last address bit. This
falling edge of the CS pin initiates the self-timed
programming cycle.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical “0” indicates that programming is still in progress. DO at logical “1” indicates that
the register at the specified address has been erased
and the device is ready for another instruction.
The erase cycle takes 4 ms per word typical.
During power-up, all programming modes of operation
are inhibited until VCC has reached a level greater than
1.4V. During power-down, the source data protection
circuitry acts to inhibit all programming modes when
VCC has fallen below 1.4V at nominal conditions.
DS20067J-page 6
 2004 Microchip Technology Inc.
93AA46/56/66
2.7
Write
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL) and before the entire write cycle is complete.
The WRITE instruction is followed by 16 bits (or by 8
bits) of data which are written into the specified
address. After the last data bit is put on the DI pin,
CS must be brought low before the next rising edge
of the CLK clock. This falling edge of CS initiates the
self-timed auto-erase and programming cycle.
The ERAL cycle takes (8 ms typical).
2.9
The WRAL instruction will write the entire memory array
with the data specified in the command. The WRAL
cycle is completely self-timed and commences at the
falling edge of the CS. Clocking of the CLK pin is not
necessary after the device has entered the Self Clocking mode. The WRAL command does include an automatic ERAL cycle for the device. Therefore, the WRAL
instruction does not require an ERAL instruction but the
chip must be in the EWEN status. The WRAL instruction
is ensured at 5V ± 10%.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL) and before the entire write cycle is complete.
DO at logical “0” indicates that programming is still in
progress. DO at logical “1” indicates that the register at
the specified address has been written with the data
specified and the device is ready for another
instruction.
The write cycle takes 4 ms per word typical.
2.8
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL).
Erase All (ERAL)
The ERAL instruction will erase the entire memory array
to the logical “1” state. The ERAL cycle is identical to
the erase cycle except for the different opcode. The
ERAL cycle is completely self-timed and commences
at the falling edge of the CS. Clocking of the CLK pin is
not necessary after the device has entered the Self
Clocking mode. The ERAL instruction is ensured at 5V
± 10%.
FIGURE 2-1:
Write All (WRAL)
The WRAL cycle takes 16 ms typical.
SYNCHRONOUS DATA TIMING
VIH
CS
VIL
TCSS
TCKH
TCKL
TCSH
VIH
CLK
VIL
TDIS
TDIH
VIH
DI
VIL
TPD
TPD
TCZ
VOH
DO
(Read) VOL
TCZ
TSV
VOH
DO
(Program) VOL
 2004 Microchip Technology Inc.
Status Valid
DS20067J-page 7
93AA46/56/66
FIGURE 2-2:
READ TIMING
TCSL
CS
CLK
DI
DO
1
1
An
0
A0
Tri-state
FIGURE 2-3:
0
Dx
D0
Dx
D0
Dx
D0
EWEN TIMING
TCSL
CS
CLK
1
DI
0
0
FIGURE 2-4:
X
X
1
1
EWDS TIMING
TCSL
CS
CLK
DI
DS20067J-page 8
1
0
0
0
0
X
X
 2004 Microchip Technology Inc.
93AA46/56/66
FIGURE 2-5:
WRITE TIMING
TCSL
CS
CLK
1
DI
1
0
An
A0
D0
Dx
Tri-state
DO
Busy
Ready
TWC
FIGURE 2-6:
WRAL TIMING
TCSL
Standby
CS
CLK
1
DI
0
0
0
X
X
Dx
D0
Busy
Tri-state
DO
Ready
Tri-state
TWL
Ensured at Vcc = +4.5V to +6.0V.
FIGURE 2-7:
ERASE TIMING
TCSL
Check Status
CS
Standby
CLK
1
DI
1
1
An
An-1 An-2
A0
TSV
DO
Tri-state
Busy
TCZ
Ready
Tri-state
TWC
 2004 Microchip Technology Inc.
DS20067J-page 9
93AA46/56/66
FIGURE 2-8:
ERAL TIMING
TCSL
Check Status
CS
Standby
CLK
1
DI
0
0
1
0
TCZ
TSV
DO
Tri-state
Busy
Ready
Tri-state
TEC
Ensured at Vcc = +4.5V to +6.0V.
DS20067J-page 10
 2004 Microchip Technology Inc.
93AA46/56/66
3.0
PIN DESCRIPTION
TABLE 3-1:
PIN FUNCTION TABLE
Name
3.1
Function
CS
Chip Select
CLK
Serial Data Clock
DI
Serial Data Input
DO
Serial Data Output
Note:
CS must go low between consecutive
instructions.
VSS
Ground
ORG
Memory Configuration
3.3
NU
Not Utilized
VCC
Power Supply
Data In is used to clock in a Start bit, opcode, address
and data synchronously with the CLK input.
Chip Select (CS)
A high level selects the device. A low level deselects
the device and forces it into Standby mode. However, a
programming cycle which is already initiated and/or in
progress will be completed, regardless of the CS input
signal. If CS is brought low during a program cycle, the
device will go into Standby mode as soon as the
programming cycle is completed.
CS must be low for 250 ns minimum (TCSL) between
consecutive instructions. If CS is low, the internal
control logic is held in a Reset status.
3.2
After detection of a Start condition the specified number
of clock cycles (respectively low-to-high transitions of
CLK) must be provided. These clock cycles are
required to clock in all required opcode, address and
data bits before an instruction is executed (see instruction set truth table). CLK and DI then become “don't
care” inputs waiting for a new Start condition to be
detected.
Serial Clock (CLK)
The Serial Clock is used to synchronize the communication between a master device and the 93AAXX.
Opcode, address, and data bits are clocked in on the
positive edge of CLK. Data bits are also clocked out on
the positive edge of CLK.
CLK can be stopped anywhere in the transmission
sequence (at high or low level) and can be continued
anytime with respect to clock high time (TCKH) and
clock low time (TCKL). This gives the controlling master
freedom in preparing opcode, address and data.
3.4
Data In (DI)
Data Out (DO)
Data Out is used in the Read mode to output data
synchronously with the CLK input (TPD after the
positive edge of CLK).
This pin also provides Ready/Busy status information
during erase and write cycles. Ready/Busy status information is available on the DO pin if CS is brought high
after being low for minimum chip select low time (TCSL)
and an erase or write operation has been initiated.
The status signal is not available on DO, if CS is held
low or high during the entire write or erase cycle. In all
other cases DO is in the High-Z mode. If status is
checked after the write/erase cycle, a pull-up resistor
on DO is required to read the Ready signal.
3.5
Organization (ORG)
When ORG is connected to VCC, the (x16) memory
organization is selected. When ORG is tied to VSS, the
(x8) memory organization is selected. ORG can only be
floated for clock speeds of 1MHz or less for the (x16)
memory organization. For clock speeds greater than 1
MHz, ORG must be tied to VCC or VSS.
CLK is a “don't care” if CS is low (device deselected). If
CS is high, but Start condition has not been detected,
any number of clock cycles can be received by the
device without changing its status (i.e., waiting for Start
condition).
CLK cycles are not required during the self-timed write
(i.e., auto erase/write) cycle.
 2004 Microchip Technology Inc.
DS20067J-page 11
93AA46/56/66
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
8-Lead PDIP
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC (.150”)
XXXXXXXX
XXXXYYWW
NNN
8-Lead SOIC (.208”)
XXXXXXXX
XXXXXXXX
YYWWNNN
DS20067J-page 12
Example
93AA46
017
0410
Example
93AA46
/SN0410
017
Example
93AA46X
/SM
0310017
 2004 Microchip Technology Inc.
93AA46/56/66
8-Lead Plastic Dual In-line (P) – 300 mil Body (PDIP)
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
B1
p
eB
B
Units
Dimension Limits
n
p
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
L
c
§
B1
B
eB
α
β
MIN
.140
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
5
INCHES*
NOM
8
.100
.155
.130
.313
.250
.373
.130
.012
.058
.018
.370
10
10
MAX
.170
.145
.325
.260
.385
.135
.015
.070
.022
.430
15
15
MILLIMETERS
NOM
8
2.54
3.56
3.94
2.92
3.30
0.38
7.62
7.94
6.10
6.35
9.14
9.46
3.18
3.30
0.20
0.29
1.14
1.46
0.36
0.46
7.87
9.40
5
10
5
10
MIN
MAX
4.32
3.68
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
 2004 Microchip Technology Inc.
DS20067J-page 13
93AA46/56/66
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil Body (SOIC)
E
E1
p
D
2
B
n
1
α
h
45°
c
A2
A
φ
β
L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
h
L
φ
c
B
α
β
MIN
.053
.052
.004
.228
.146
.189
.010
.019
0
.008
.013
0
0
A1
INCHES*
NOM
8
.050
.061
.056
.007
.237
.154
.193
.015
.025
4
.009
.017
12
12
MAX
.069
.061
.010
.244
.157
.197
.020
.030
8
.010
.020
15
15
MILLIMETERS
NOM
8
1.27
1.35
1.55
1.32
1.42
0.10
0.18
5.79
6.02
3.71
3.91
4.80
4.90
0.25
0.38
0.48
0.62
0
4
0.20
0.23
0.33
0.42
0
12
0
12
MIN
MAX
1.75
1.55
0.25
6.20
3.99
5.00
0.51
0.76
8
0.25
0.51
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
DS20067J-page 14
 2004 Microchip Technology Inc.
93AA46/56/66
8-Lead Plastic Small Outline (SM) – Medium, 208 mil Body (SOIJ)
(JEITA/EIAJ Standard, Formerly called SOIC)
E
E1
p
D
2
1
n
B
α
c
A2
A
φ
L
β
Units
Dimension Limits
n
p
MIN
INCHES*
NOM
8
.050
.075
.074
.005
.313
.208
.205
.025
4
.009
.017
12
12
A1
MAX
MILLIMETERS
NOM
8
1.27
1.78
1.97
1.75
1.88
0.05
0.13
7.62
7.95
5.11
5.28
5.13
5.21
0.51
0.64
0
4
0.20
0.23
0.36
0.43
0
12
0
12
MIN
Number of Pins
Pitch
Overall Height
A
.080
.070
Molded Package Thickness
A2
.078
.069
Standoff
A1
.002
.010
Overall Width
E
.300
.325
Molded Package Width
E1
.201
.212
Overall Length
D
.202
.210
Foot Length
L
.020
.030
φ
Foot Angle
0
8
c
Lead Thickness
.008
.010
Lead Width
B
.014
.020
α
Mold Draft Angle Top
0
15
β
Mold Draft Angle Bottom
0
15
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .010" (0.254mm) per side.
MAX
2.03
1.98
0.25
8.26
5.38
5.33
0.76
8
0.25
0.51
15
15
Drawing No. C04-056
 2004 Microchip Technology Inc.
DS20067J-page 15
93AA46/56/66
APPENDIX A:
REVISION HISTORY
Revision J
Added note to page 1 header (Not recommended for
new designs).
Added Section 4.0: Package Marking Information.
Added On-line Support page.
Updated document format.
DS20067J-page 16
 2004 Microchip Technology Inc.
93AA46/56/66
ON-LINE SUPPORT
Microchip provides on-line support on the Microchip
World Wide Web site.
The web site is used by Microchip as a means to make
files and information easily available to customers. To
view the site, the user must have access to the Internet
and a web browser, such as Netscape® or Microsoft®
Internet Explorer. Files are also available for FTP
download from our FTP site.
Connecting to the Microchip Internet
Web Site
SYSTEMS INFORMATION AND
UPGRADE HOT LINE
The Systems Information and Upgrade Line provides
system users a listing of the latest versions of all of
Microchip's development systems software products.
Plus, this line provides information on how customers
can receive the most current upgrade kits. The Hot Line
Numbers are:
1-800-755-2345 for U.S. and most of Canada, and
1-480-792-7302 for the rest of the world.
042003
The Microchip web site is available at the following
URL:
www.microchip.com
The file transfer site is available by using an FTP
service to connect to:
ftp://ftp.microchip.com
The web site and file transfer site provide a variety of
services. Users may download files for the latest
Development Tools, Data Sheets, Application Notes,
User's Guides, Articles and Sample Programs. A variety of Microchip specific business information is also
available, including listings of Microchip sales offices,
distributors and factory representatives. Other data
available for consideration is:
• Latest Microchip Press Releases
• Technical Support Section with Frequently Asked
Questions
• Design Tips
• Device Errata
• Job Postings
• Microchip Consultant Program Member Listing
• Links to other useful web sites related to
Microchip Products
• Conferences for products, Development Systems,
technical information and more
• Listing of seminars and events
 2004 Microchip Technology Inc.
DS20067J-page 17
93AA46/56/66
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation
can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this document.
To:
Technical Publications Manager
RE:
Reader Response
Total Pages Sent ________
From: Name
Company
Address
City / State / ZIP / Country
Telephone: (_______) _________ - _________
FAX: (______) _________ - _________
Application (optional):
Would you like a reply?
Device: 93AA46/56/66
Y
N
Literature Number: DS20067J
Questions:
1. What are the best features of this document?
2. How does this document meet your hardware and software development needs?
3. Do you find the organization of this document easy to follow? If not, why?
4. What additions to the document do you think would enhance the structure and subject?
5. What deletions from the document could be made without affecting the overall usefulness?
6. Is there any incorrect or misleading information (what and where)?
7. How would you improve this document?
DS20067J-page 18
 2004 Microchip Technology Inc.
93AA46/56/66
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
/XX
XXX
Device
Temperature
Range
Package
Pattern
Device
93AA46/56/66:
93AA46/56/66X:
Microwire Serial EEPROM
Microwire Serial EEPROM in
alternate pinouts (SN package only)
93AA46T/56T/66T:
Microwire Serial EEPROM
(Tape and Reel)
93AA46XT/56XT/66XT: Microwire Serial EEPROM
(Tape and Reel)
Temperature Range
Blank
=
0°C to
Package
P
SN
SM
=
=
=
Plastic PDIP (300 mil Body), 8-lead
Plastic SOIC (150 mil Body), 8-lead
Plastic SOIC (208 mil Body), 8-lead
(93AA46/56/66)
+70°C
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2004 Microchip Technology Inc.
DS20067J-page 19
93AA46/56/66
NOTES:
DS20067J-page 20
 2004 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical
components in life support systems is not authorized except
with express written approval by Microchip. No licenses are
conveyed, implicitly or otherwise, under any intellectual
property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART,
PRO MATE, PowerSmart, rfPIC, and SmartShunt are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL,
SmartSensor and The Embedded Control Solutions Company
are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, Migratable Memory, MPASM,
MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net,
PICLAB, PICtail, PowerCal, PowerInfo, PowerMate,
PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial,
SmartTel and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2004, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
 2004 Microchip Technology Inc.
DS20067J-page 21
WORLDWIDE SALES AND SERVICE
AMERICAS
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Corporate Office
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05/28/04
DS20067J-page 22
 2004 Microchip Technology Inc.