MICROCHIP 93LC66T-I/SN

Not recommended for new designs –
Please use 93LC46C, 93LC56C or 93LC66C.
93LC46/56/66
1K/2K/4K 2.5V Microwire Serial EEPROM
Features:
Package Types
CS
CLK
1
2
DI
DO
3
8
7
VCC
NU
6
4
5
ORG
VSS
NU
VCC
1
2
8
7
ORG
VSS
CS
CLK
3
6
DO
DI
ROTATED SOIC
93LC46X
93LC56X
93LC66X
- Industrial (I):
PDIP/SOIC
93LC46
93LC56
93LC66
• Single supply with programming operation down
to 2.5V
• Low-power CMOS technology
• 100 A typical active read current at 2.5V
• 3 A typical standby current at 2.5V
• ORG pin selectable memory configuration
• 128 x 8- or 64 x 16-bit organization (93LC46)
• 256 x 8- or 128 x 16-bit organization (93LC56)
• 512 x 8 or 256 x 16 bit organization (93LC66)
• Self-timed erase and write cycles
(including auto-erase)
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device status signal during erase/write cycles
• Sequential read function
• 1,000,000 E/W cycles ensured
• Data retention > 200 years
• 8-pin PDIP/SOIC
(SOIC in JEDEC standards)
• Temperature ranges supported:
4
5
Block Diagram
VCC
VSS
Memory
Array
-40°C to +85°C
Address
Decoder
Address
Counter
Description:
The Microchip Technology Inc. 93LC46/56/66 are 1K,
2K and 4K low voltage serial Electrically Erasable
PROMs (EEPROM). The device memory is configured
as x8 or x16 bits depending on the external logic of
levels of the ORG pin. Advanced CMOS technology
makes these devices ideal for low power nonvolatile
memory applications. The 93LC Series is available in
standard 8-pin PDIP and surface mount SOIC
packages. The rotated pin-out 93LC46X/56X/66X are
offered in the “SN” package only.
 2002-2012 Microchip Technology Inc.
Data Register
Output
Buffer
DO
DI
ORG
CS
Mode
Decode
Logic
CLK
Clock
Register
DS21712C-page 1
93LC46/56/66
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings(†)
VCC .............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. VSS ........................................................................................................ -0.6V to VCC + 1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied ................................................................................................-40°C to +125°C
ESD protection on all pins  4 kV
† NOTICE: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
DC CHARACTERISTICS
Param.
No.
D1
Sym
VIH1
Characteristic
High-level input voltage
VIH2
D2
VIL1
Low-level input voltage
VIL2
D3
VOL1
Low-level output voltage
VOL2
D4
VOH1
High-level output voltage
VOH2
VCC = +2.5V to +5.5V
Industrial (I): TA = -40°C to +85°C
Min
Typ
Max
Units
Conditions
2.0
—
VCC +1
V
VCC 2.7V
0.7 VCC
—
VCC +1
V
VCC 2.7V
-0.3
—
0.8
V
VCC 2.7V
-0.3
—
0.2 VCC
V
VCC 2.7V
—
—
0.4
V
IOL = 2.1 mA, VCC = 4.5V
—
—
0.3
V
IOL = 100 A, VCC = 2.5V
2.4
—
—
V
IOL = 400 A, VCC = 4.5V
VCC -0.2
—
—
V
IOL = 100 A, VCC = 2.5V
D5
ILI
Input leakage current
—
—
±10
A
VIN = 0.1V to VCC
D6
ILO
Output leakage current
—
—
±10
A
VOUT = 0.1V to VCC
D7
CIN,
COUT
Pin capacitance
(all inputs/outputs)
—
—
7
pF
VIN/VOUT = 0V (Note 1 & 2)
TA = 25°C, FCLK = 1 MHz
D8
ICC write Operating current
—
—
3
mA
FCLK = 2 MHz, VCC = 5.5V
(Note 2)
D9
ICC read
—
—
—
—
—
100
1
500
—
mA
A
A
FCLK = 2 MHz, VCC = 5.5V
FCLK = 1 MHz, VCC = 3.0V
FCLK = 1 MHz, VCC = 2.5V
D10
ICCS
—
—
—
—
—
3
100
30
—
A
A
A
CLK = CS = 0V; VCC = 5.5V
CLK = CS = 0V; VCC = 3.0V
CLK = CS = 0V; VCC = 2.5V
ORG, DI = VSS or VCC
Note 1:
2:
Standby current
This parameter is tested at TA = 25°C and FCLK = 1 MHz.
This parameter is periodically sampled and not 100% tested.
DS21712C-page 2
 2002-2012 Microchip Technology Inc.
93LC46/56/66
AC CHARACTERISTICS
VCC = +2.5V to +5.5V
Industrial (I): TA = -40°C to +85°C
AC CHARACTERISTICS
Param.
No.
1
Sym
Characteristic
Min
Typ
Max
Units
FCLK
Clock frequency
—
—
—
—
2
1
MHz
MHz
Conditions
VCC  4.5V
VCC  4.5V
2
TCKH
Clock high time
250
—
—
ns
3
TCKL
Clock low time
250
—
—
ns
4
TCSS
Chip select setup time
50
—
—
ns
Relative to CLK
5
TCSH
Chip select hold time
0
—
—
ns
Relative to CLK
6
TCSL
Chip select low time
250
—
—
ns
7
TDIS
Data input setup time
100
—
—
ns
Relative to CLK
8
TDIH
Data input hold time
100
—
—
ns
Relative to CLK
9
TPD
Data output delay time
—
—
400
ns
CL = 100 pF
10
TCZ
Data output disable time
—
—
100
ns
CL = 100 pf (Note 2)
11
TSV
Status valid time
—
—
500
ns
CL = 100 pF
12
TWC
Program cycle time
—
4
10
ms
Erase/Write mode
13
TEC
—
8
15
ms
ERAL mode (VCC=5V ±10%)
14
TWL
—
16
30
ms
WRAL mode (VCC=5V ±10%)
15
—
1M
—
1M
Note 1:
2:
3:
Endurance
cycles 25°C, VCC = 5.0V, Block
mode (Note 3)
This parameter is tested at TA = 25°C and FCLK = 1 MHz.
This parameter is periodically sampled and not 100% tested.
This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from Microchip’s web site
at: www.microchip.com.
FIGURE 1-1:
CS
SYNCHRONOUS DATA TIMING
VIH
VIL
4
2
3
5
VIH
CLK
VIL
7
8
VIH
DI
VIL
9
DO VOH
(Read)
VOL
9
10
11
DO VOH
(Write)
VOL
 2002-2012 Microchip Technology Inc.
10
Status Valid
DS21712C-page 3
93LC46/56/66
TABLE 1-1:
Instruction
INSTRUCTION SET FOR 93LC46: ORG = 1 (X 16 ORGANIZATION)
Data Out
Req. CLK
Cycles
—
D15 - D0
25
Opcode
READ
1
10
EWEN
1
00
1 1 XXXX
—
High-Z
9
ERASE
1
11
A5 A4 A3 A2 A1 A0
—
(RDY/BSY)
9
ERAL
1
00
1 0 XXXX
—
(RDY/BSY)
9
WRITE
1
01
A5 A4 A3 A2 A1 A0
D15 - D0
(RDY/BSY)
25
WRAL
1
00
0 1 XXXX
D15 - D0
(RDY/BSY)
25
EWDS
1
00
0 0 XXXX
—
High-Z
9
TABLE 1-2:
Instruction
Address
Data In
SB
A5 A4 A3 A2 A1 A0
INSTRUCTION SET FOR 93LC46: ORG = 0 (X 8 ORGANIZATION)
SB
Opcode
Address
READ
1
10
EWEN
1
00
11XXXXX
ERASE
1
11
A6 A5 A4 A3 A2 A1 A0
A6 A5 A4 A3 A2 A1 A0
Data In
Data Out
Req. CLK
Cycles
—
D7 - D0
18
—
High-Z
10
—
(RDY/BSY)
10
ERAL
1
00
10XXXXX
—
(RDY/BSY)
10
WRITE
1
01
A6 A5 A4 A3 A2 A1 A0
D7 - D0
(RDY/BSY)
18
WRAL
1
00
01XXXXX
D7 - D0
(RDY/BSY)
18
EWDS
1
00
00XXXXX
—
High-Z
10
TABLE 1-3:
Instruction
INSTRUCTION SET FOR 93LC56: ORG = 1 (X 16 ORGANIZATION)
SB
Opcode
Address
READ
1
10
EWEN
1
00
11XXXXXX
ERASE
1
11
X A6 A5 A4 A3 A2 A1 A0
X A6 A5 A4 A3 A2 A1 A0
Data In
Data Out
Req. CLK
Cycles
—
D15 - D0
27
—
High-Z
11
—
(RDY/BSY)
11
ERAL
1
00
10XXXXXX
—
(RDY/BSY)
11
WRITE
1
01
X A6 A5 A4 A3 A2 A1 A0
D15 - D0
(RDY/BSY)
27
WRAL
1
00
01XXXXXX
D15 - D0
(RDY/BSY)
27
EWDS
1
00
00XXXXXX
—
High-Z
11
TABLE 1-4:
INSTRUCTION SET FOR 93LC56: ORG = 0 (X 8 ORGANIZATION)
Data In
Data Out
Req. CLK
Cycles
X A7 A6 A5 A4 A3 A2 A1 A0
—
D7 - D0
20
00
11XXXXXXX
—
High-Z
12
11
X A7 A6 A5 A4 A3 A2 A1 A0
—
(RDY/BSY)
12
1
00
10XXXXXXX
—
(RDY/BSY)
12
WRITE
1
01
X A7 A6 A5 A4 A3 A2 A1 A0
D7 - D0
(RDY/BSY)
20
WRAL
1
00
01XXXXXXX
D7 - D0
(RDY/BSY)
20
EWDS
1
00
00XXXXXXX
—
High-Z
12
Instruction
SB
Opcode
READ
1
10
EWEN
1
ERASE
1
ERAL
DS21712C-page 4
Address
 2002-2012 Microchip Technology Inc.
93LC46/56/66
TABLE 1-5:
Instruction
INSTRUCTION SET FOR 93LC66: ORG = 1 (X 16 ORGANIZATION)
Data Out
Req. CLK
Cycles
—
D15 - D0
27
Opcode
READ
1
10
EWEN
1
00
11XXXXXX
—
High-Z
11
ERASE
1
11
A7 A6 A5 A4 A3 A2 A1 A0
—
(RDY/BSY)
11
ERAL
1
00
10XXXXXX
—
(RDY/BSY)
11
WRITE
1
01
A7 A6 A5 A4 A3 A2 A1 A0
D15 - D0
(RDY/BSY)
27
WRAL
1
00
01XXXXXX
D15 - D0
(RDY/BSY)
27
EWDS
1
00
00XXXXXX
—
High-Z
11
TABLE 1-6:
Address
Data In
SB
A7 A6 A5 A4 A3 A2 A1 A0
INSTRUCTION SET FOR 93LC66: ORG = 0 (X 8 ORGANIZATION)
Data In
Data Out
Req. CLK
Cycles
A8 A7 A6 A5 A4 A3 A2 A1 A0
—
D7 - D0
20
00
11XXXXXXX
—
High-Z
12
11
A8 A7 A6 A5 A4 A3 A2 A1 A0
—
(RDY/BSY)
12
1
00
10XXXXXXX
—
(RDY/BSY)
12
WRITE
1
01
A8 A7 A6 A5 A4 A3 A2 A1 A0
D7 - D0
(RDY/BSY)
20
WRAL
1
00
01XXXXXXX
D7 - D0
(RDY/BSY)
20
EWDS
1
00
00XXXXXXX
—
High-Z
12
Instruction
SB
Opcode
READ
1
10
EWEN
1
ERASE
1
ERAL
 2002-2012 Microchip Technology Inc.
Address
DS21712C-page 5
93LC46/56/66
2.0
FUNCTIONAL DESCRIPTION
When the ORG pin is connected to VCC, the (x16)
organization is selected. When it is connected to
ground, the (x8) organization is selected. Instructions, addresses and write data are clocked into the
DI pin on the rising edge of the clock (CLK). The DO
pin is normally held in a high-Z state except when
reading data from the device, or when checking the
Ready/Busy status during a programming operation.
The Ready/Busy status can be verified during an
erase/write operation by polling the DO pin; DO low
indicates that programming is still in progress, while
DO high indicates the device is ready. The DO will
enter the high-Z state on the falling edge of the CS.
2.1
Before a Start condition is detected, CS, CLK and DI
may change in any combination (except to that of a
Start condition), without resulting in any device operation (Read, Write, Erase, EWEN, EWDS, ERAL and
WRAL). As soon as CS is high, the device is no longer
in the Standby mode.
An instruction following a Start condition will only be
executed if the required amount of opcode, address
and data bits for any particular instruction is clocked in.
After execution of an instruction (i.e., clock in or out of
the last required address or data bit) CLK and DI
become “don't care” bits until a new Start condition is
detected.
Data In/Data Out (DI/DO)
It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a “bus conflict” to occur during the “dummy zero”
that precedes the read operation, if A0 is a logic high
level. Under such a condition the voltage level seen at
Data Out is undefined and will depend upon the relative
impedances of Data Out and the signal source driving
A0. The higher the current sourcing capability of A0,
the higher the voltage at the Data Out pin.
2.3
2.4
Read
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 16-bit (x16 organization) or 8-bit
(x8 organization) output string. The output data bits will
toggle on the rising edge of the CLK and are stable
after the specified time delay (TPD). Sequential read is
possible when CS is held high. The memory data will
automatically cycle to the next register and output
sequentially.
Start Condition
The Start bit is detected by the device if CS and DI are
both high with respect to the positive edge of CLK for
the first time.
2.2
After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before any ERASE or WRITE instruction can
be executed.
2.5
Erase/Write Enable and Disable
(EWEN, EWDS)
The 93LC46/56/66 power up in the Erase/Write Disable
(EWDS) state. All programming modes must be
preceded by an Erase/Write Enable (EWEN) instruction.
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed
or VCC is removed from the device. To protect against
accidental data disturb, the EWDS instruction can be
used to disable all erase/write functions and should
follow all programming operations. Execution of a READ
instruction is independent of both the EWEN and EWDS
instructions.
2.6
Erase
The ERASE instruction forces all data bits of the specified address to the logical “1” state. CS is brought low
following the loading of the last address bit. This falling
edge of the CS pin initiates the self-timed programming
cycle.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical “0” indicates that programming is still in progress. DO at logical “1” indicates that
the register at the specified address has been erased
and the device is ready for another instruction.
The erase cycle takes 4 ms per word typical.
Data Protection
During power-up, all programming modes of operation
are inhibited until VCC has reached a level greater than
1.4V. During power-down, the source data protection
circuitry acts to inhibit all programming modes when
VCC has fallen below 1.4V at nominal conditions.
The EWEN and EWDS commands give additional
protection against accidentally programming during
normal operation.
DS21712C-page 6
 2002-2012 Microchip Technology Inc.
93LC46/56/66
2.7
Write
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL) and before the entire write cycle is complete.
The WRITE instruction is followed by 16 bits (or by 8
bits) of data which are written into the specified
address. After the last data bit is put on the DI pin,
CS must be brought low before the next rising edge
of the CLK clock. This falling edge of CS initiates the
self-timed auto-erase and programming cycle.
The ERAL cycle takes (8 ms typical).
2.9
The WRAL instruction will write the entire memory array
with the data specified in the command. The WRAL
cycle is completely self-timed and commences at the
falling edge of the CS. Clocking of the CLK pin is not
necessary after the device has entered the self clocking mode. The WRAL command does include an automatic ERAL cycle for the device. Therefore, the WRAL
instruction does not require an ERAL instruction but the
chip must be in the EWEN status. The WRAL instruction
is ensured at 5V ±10%.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL) and before the entire write cycle is complete.
DO at logical “0” indicates that programming is still in
progress. DO at logical “1” indicates that the register at
the specified address has been written with the data
specified and the device is ready for another
instruction.
The write cycle takes 4 ms per word typical.
2.8
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (Tcsl).
Erase All (ERAL)
The ERAL instruction will erase the entire memory array
to the logical “1” state. The ERAL cycle is identical to
the ERASE cycle except for the different opcode. The
ERAL cycle is completely self-timed and commences
at the falling edge of the CS. Clocking of the CLK pin is
not necessary after the device has entered the self
clocking mode. The ERAL instruction is ensured at 5V
±10%.
FIGURE 2-1:
Write All (WRAL)
The WRAL cycle takes 16 ms typical.
READ TIMING
CS
CLK
DI
DO
1
1
0
High-Z
 2002-2012 Microchip Technology Inc.
An
•••
A0
0
Dx
•••
D0
Dx
•••
D0
Dx
•••
D0
DS21712C-page 7
93LC46/56/66
FIGURE 2-2:
EWEN TIMING
6
CS
1
DI
FIGURE 2-3:
0
0
1
1
•••
X
X
EWDS TIMING
6
CS
CLK
1
DI
FIGURE 2-4:
0
0
0
•••
X
0
X
WRITE TIMING
6
CS
CLK
DI
1
0
1
An
•••
A0
Dx
•••
D0
11
DO
High-Z
Busy
Ready
12
DS21712C-page 8
 2002-2012 Microchip Technology Inc.
93LC46/56/66
FIGURE 2-5:
WRAL TIMING
6
CS
CLK
DI
1
0
0
X
1
0
•••
X
Dx
•••
D0
10
11
High-Z
DO
Busy
Ready
High-Z
14
Ensured by Characterization at VCC = 4.5V to +5.5V.
FIGURE 2-6:
ERASE TIMING
6
CS
Check Status
CLK
1
DI
1
1
An
An-1
An-2
•••
A0
11
DO
10
High-Z
Busy
Ready
High-Z
12
FIGURE 2-7:
ERAL TIMING
6
CS
Check Status
CLK
DI
1
0
0
1
0
X
•••
X
11
DO
High-Z
10
Busy
Ready
High-Z
Ensured by Characterization at Vcc = 4.5V to +5.5V.
 2002-2012 Microchip Technology Inc.
13
DS21712C-page 9
93LC46/56/66
3.0
PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
Name
CS
PIN FUNCTION TABLE
PDIP
SOIC
ROTATED
TSSOP
1
1
3
Description
Chip Select
CLK
2
2
4
Serial Data Clock
DI
3
3
5
Serial Data Input
DO
4
4
6
Serial Data Output
VSS
5
5
7
Ground
ORG
6
6
8
Memory Configuration
NU
7
7
1
Not Utilized
Vcc
8
8
2
+1.8V to 5.5V Power Supply
3.1
Chip Select (CS)
A high level selects the device. A low level deselects
the device and forces it into Standby mode. However, a
programming cycle which is already initiated and/or in
progress will be completed, regardless of the CS input
signal. If CS is brought low during a program cycle, the
device will go into Standby mode as soon as the
programming cycle is completed.
CS must be low for 250 ns minimum (TCSL) between
consecutive instructions. If CS is low, the internal
control logic is held in a Reset status.
3.2
Serial Clock (CLK)
The serial clock is used to synchronize the communication between a master device and the 93LC46/56/66.
Opcode, address and data bits are clocked in on the
positive edge of CLK. Data bits are also clocked out on
the positive edge of CLK.
CLK can be stopped anywhere in the transmission
sequence (at high or low level) and can be continued
anytime with respect to clock high time (TCKH) and
clock low time (TCKL). This gives the controlling master
freedom in preparing opcode, address and data.
CLK is a “don't care” if CS is low (device deselected). If
CS is high, but Start condition has not been detected,
any number of clock cycles can be received by the
device without changing its status (i.e., waiting for Start
condition).
CLK cycles are not required during the self-timed write
(i.e., auto erase/write) cycle.
Note:
3.3
CS must go low between consecutive
instructions.
Data In (DI)
Data In is used to clock in a Start bit, opcode, address
and data synchronously with the CLK input.
3.4
Data Out (DO)
Data Out is used in the Read mode to output data synchronously with the CLK input (TPD after the positive
edge of CLK).
This pin also provides Ready/Busy status information
during erase and write cycles. Ready/Busy status information is available on the DO pin if CS is brought high
after being low for minimum chip select low time (TCSL)
and an erase or write operation has been initiated.
The Status signal is not available on DO, if CS is held
low or high during the entire write or erase cycle. In all
other cases DO is in the High-Z mode. If status is
checked after the write/erase cycle, a pull-up resistor
on DO is required to read the Ready signal.
3.5
Organization (ORG)
When ORG is connected to VCC, the (x16) memory
organization is selected. When ORG is tied to VSS, the
(x8) memory organization is selected. ORG can only be
floated for clock speeds of 1 MHz or less for the (x16)
memory organization. For clock speeds greater than
1 MHz, ORG must be tied to VCC or VSS.
After detection of a Start condition the specified number
of clock cycles (respectively low-to-high transitions of
CLK) must be provided. These clock cycles are required
to clock in all required opcode, address and data bits
before an instruction is executed (see instruction set
truth table). CLK and DI then become “don't care” inputs
waiting for a new Start condition to be detected.
DS21712C-page 10
 2002-2012 Microchip Technology Inc.
93LC46/56/66
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
8-Lead PDIP (300 mil)
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
93LC46
I/PNNN
YYWW
Example:
93LC46
I/SNYYWW
NNN
8-Lead Rotated SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
Example:
Example:
93LC46X
I/SNYYWW
NNN
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2002-2012 Microchip Technology Inc.
DS21712C-page 11
93LC46/56/66
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E1
D
2
n
1

E
A2
A
L
c
A1

B1
p
eB
B
Units
Dimension Limits
n
p
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
L
c
§
B1
B
eB


MIN
.140
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
5
INCHES*
NOM
MAX
8
.100
.155
.130
.170
.145
.313
.250
.373
.130
.012
.058
.018
.370
10
10
.325
.260
.385
.135
.015
.070
.022
.430
15
15
MILLIMETERS
NOM
8
2.54
3.56
3.94
2.92
3.30
0.38
7.62
7.94
6.10
6.35
9.14
9.46
3.18
3.30
0.20
0.29
1.14
1.46
0.36
0.46
7.87
9.40
5
10
5
10
MIN
MAX
4.32
3.68
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
DS21712C-page 12
 2002-2012 Microchip Technology Inc.
93LC46/56/66
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
E1
p
D
2
B
n
1

h
45×
c
A2
A
f

L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
h
L
f
c
B


MIN
.053
.052
.004
.228
.146
.189
.010
.019
0
.008
.013
0
0
A1
INCHES*
NOM
8
.050
.061
.056
.007
.237
.154
.193
.015
.025
4
.009
.017
12
12
MAX
.069
.061
.010
.244
.157
.197
.020
.030
8
.010
.020
15
15
MILLIMETERS
NOM
8
1.27
1.35
1.55
1.32
1.42
0.10
0.18
5.79
6.02
3.71
3.91
4.80
4.90
0.25
0.38
0.48
0.62
0
4
0.20
0.23
0.33
0.42
0
12
0
12
MIN
MAX
1.75
1.55
0.25
6.20
3.99
5.00
0.51
0.76
8
0.25
0.51
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
 2002-2012 Microchip Technology Inc.
DS21712C-page 13
93LC46/56/66
APPENDIX A:
REVISION HISTORY
Revision B
Added note to page 1 header (Not recommended for
new designs).
Updated document format.
Revision C
Added a note to each package outline drawing.
DS21712C-page 14
 2002-2012 Microchip Technology Inc.
93LC46/56/66
THE MICROCHIP WEB SITE
CUSTOMER SUPPORT
Microchip provides online support via our WWW site at
www.microchip.com. This web site is used as a means
to make files and information easily available to
customers. Accessible by using your favorite Internet
browser, the web site contains the following
information:
Users of Microchip products can receive assistance
through several channels:
• Product Support – Data sheets and errata,
application notes and sample programs, design
resources, user’s guides and hardware support
documents, latest software releases and archived
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• General Technical Support – Frequently Asked
Questions (FAQ), technical support requests,
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program member listing
• Business of Microchip – Product selector and
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representatives
•
•
•
•
Distributor or Representative
Local Sales Office
Field Application Engineer (FAE)
Technical Support
Customers
should
contact
their
distributor,
representative or field application engineer (FAE) for
support. Local sales offices are also available to help
customers. A listing of sales offices and locations is
included in the back of this document.
Technical support is available through the web site
at: http://microchip.com/support
CUSTOMER CHANGE NOTIFICATION
SERVICE
Microchip’s customer notification service helps keep
customers current on Microchip products. Subscribers
will receive e-mail notification whenever there are
changes, updates, revisions or errata related to a
specified product family or development tool of interest.
To register, access the Microchip web site at
www.microchip.com. Under “Support”, click on
“Customer Change Notification” and follow the
registration instructions.
 2002-2012 Microchip Technology Inc.
DS21712C-page 15
93LC46/56/66
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip
product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our
documentation can better serve you, please FAX your comments to the Technical Publications Manager at
(480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this document.
TO:
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RE:
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City / State / ZIP / Country
Telephone: (_______) _________ - _________
FAX: (______) _________ - _________
Application (optional):
Would you like a reply?
Y
N
Device: 93LC46/56/66
Literature Number: DS21712C
Questions:
1. What are the best features of this document?
2. How does this document meet your hardware and software development needs?
3. Do you find the organization of this document easy to follow? If not, why?
4. What additions to the document do you think would enhance the structure and subject?
5. What deletions from the document could be made without affecting the overall usefulness?
6. Is there any incorrect or misleading information (what and where)?
7. How would you improve this document?
DS21712C-page 16
 2002-2012 Microchip Technology Inc.
93LC46/56/66
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
/XX
XXX
Device
Temperature
Range
Package
Pattern
Device
93LC46: 1K 2.5V Microwire Serial EEPROM
93LC46X: 1K 2.5V Microwire Serial EEPROM in
alternate pinouts (SN package only)
93LC46T: 1K 2.5V Microwire Serial EEPROM
(Tape and Reel)
93LC46XT: 1K 2.5V Microwire Serial EEPROM
(Tape and Reel)
93LC56: 2K 2.5V Microwire Serial EEPROM
93LC56X: 2K 2.5V Microwire Serial EEPROM in
alternate pinouts (SN package only)
93LC56T: 2K 2.5V Microwire Serial EEPROM
(Tape and Reel)
93LC56XT:2K 2.5V Microwire Serial EEPROM
(Tape and Reel)
93LC66: 4K 2.5V Microwire Serial EEPROM
93LC66X: 4K 2.5V Microwire Serial EEPROM in
alternate pinouts (SN package only)
93LC66T: 4K 2.5V Microwire Serial EEPROM
(Tape and Reel)
93LC66XT: 4K 2.5V Microwire Serial EEPROM
(Tape and Reel)
Temperature
Range
I
= -40C to +85C
Package
P
SN
=
=
Examples:
a)
93LC46-I/P: 1K, 128x8 or 64x16 Serial
EEPROM, PDIP package
b)
93LC46-I/SN: 1K, 128x8 or 64x16 Serial
EEPROM, SOIC package
93LC46T-I/SN: 1K, 128x8 or 64x16
Serial EEPROM, SOIC package, tape
and reel
93LC46X-I/SN: 1K, 128x8 or 64x16
Serial EEPROM, Rotated SOIC package
c)
d)
e)
93LC56-I/P: 2K, 256x8 or 128x16 Serial
EEPROM, PDIP package
f)
93LC56-I/SN: 2K, 256x8 or 128x16
Serial EEPROM, SOIC package
93LC56T-I/SN: 2K, 256x8 or 128x16
Serial EEPROM, SOIC package, tape
and reel
93LC56X-I/SN: 2K, 256x8 or 128x16
Serial EEPROM, Rotated SOIC package
g)
h)
i)
93LC66-I/P: 4K, 512x8 or 256x16 Serial
EEPROM, PDIP package
j)
93LC66-I/SN: 4K, 512x8 or 256x16
Serial EEPROM, SOIC package
93LC66T-I/SN: 4K, 512x8 or 256x16
Serial EEPROM, SOIC package, tape
and reel
93LC66X-I/SN: 4K, 512x8 or 256x16
Serial EEPROM, Rotated SOIC package
k)
l)
Plastic DIP (300 mil body), 8-lead
Plastic SOIC (150 mil body), 8-lead
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
Your local Microchip sales office
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002-2012 Microchip Technology Inc.
DS21712C-page 17
93LC46/56/66
NOTES:
DS21712C-page 18
 2002-2012 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2002-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620767337
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2002-2012 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21712C-page 19
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
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Technical Support:
http://www.microchip.com/
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Web Address:
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DS21712C-page 20
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10/26/12
 2002-2012 Microchip Technology Inc.