AC12DSMA,AC12FSMA DESCRIPTION PACKAGE DRAWING (Unit: mm) The AC12DSMA and AC12FSMA are resin insulation type 4.7 MAX. 10.5 MAX. TRIACs with an effective current of 12 A (TC = 74°C). 7 ±0.2 φ 3.2 ±0.2 2.8 ±0.2 1 These products features ratings and electrical characteristics 2 3 5 ±0.2 equal to TO-220AB package TRIAC and a high reliability design. FEATURES • Insulation type TRIAC fully covered with resin on the entire case other than electrode leads • Insulation voltage and conduction equal to conventional mica 12 ±0.2 mounting. 0.8 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 TYP. 2.54 TYP. and polyester film • High allowable on-current when using a single unit *: TC test bench-mark Non-contact switches of motor speed control, heater temperature control, lamp light control www.kersemi.com 0.5 ±0.1 2.5 ±0.1 TRIAC 1: T1 2: T2 3: Gate • Can be replaced with TO-220AB package APPLICATIONS * 13.5 MIN. mounting on a heatsink board or performing high-density 17 ±0.2 and are electrically insulated with electrodes, giving them a considerable advantage over conventional TRIACs when 3.0 MAX. 5 ±0.1 These products are covered with resin mold on the entire case Standard weight: 2 g AC12DSMA,AC10FSMA MAXIMUM RATINGS Parameter Symbol AC12DSMA AC12FSMA Unit Remarks Non-repetitive Peak Off-state Voltage VDSM 500 700 V − Repetitive Peak Off-state Voltage VDRM 400 600 V − Effective On-state Current IT(RMS) 12 (TC = 74°C) A Refer to Figure 11 and 12. ITSM 100 (50 Hz 1 cycle) A Refer to Figure 2. Surge On-state Current 110 (60 Hz 1 cycle) Fusing Current ∫ iT2dt 45 (1 ms ≤ t ≤ 10 ms) As 2 − Critical Rate Rise of On-state Current dIT/dt 50 A/µs − PGM 5.0 (f ≥ 50 Hz, Duty ≤ 10%) W − PG(AV) 0.5 W − Peak Gate Current IGM ±3 (f ≥ 50 Hz, Duty ≤ 10%) A − Junction Temperature Tj −40～+125 °C − Storage Temperature Tstg −55～+150 °C − Peak Gate Power Dissipation Average Gate Power Dissipation ELECTRICAL CHARACTERISTICS (Tj = 25°C) Parameter Symbol Repetitive Peak Off-state Current On-state Voltage IDRM VTM Gate Trigger Current VDM = VDRM TYP. MAX. Unit Remarks Tj = 25°C − − 100 µA − Tj = 125°C − − 2 mA − − − 1.3 V Refer to Figure 1. mA Refer to Figure 4. V Refer to Figure 4. ITM = 10 A T2+, G+ − − 20 RL = 30 Ω T2−, G+ − − − III T2−, G− − − 20 IV T2+, G− − − 20 VDM = 12 V, T2+, G+ − − 1.5 RL = 30 Ω T2−, G+ − − − T2−, G− − − 1.5 IGT Mode I VGT II III IV Gate Non-trigger Voltage Holding Current VGD IH Critical Rate Rise of Off-state Voltage Commutating Critical Rate Rise of dv/dt T2+, G− Tj = 125°C, VDM = 1 VDRM 2 VDM = 24 V, ITM = 10 A Tj = 125°C, VDM 2 = 3 VDRM (dv/dt)c Tj = 125°C, − − 1.5 0.3 − − V − − 30 − mA − − 100 − V/µs − 10 − − V/µs − − − 3.5 (diT/dt)c = −6 A/ms, VD = 400 V Off-state Voltage Thermal Resistance MIN. VDM = 12 V, Mode I II Gate Trigger Voltage Conditions Note Rth(j-c) Junction-to-case AC www.kersemi.com °C/W Refer to Figure 13. AC12DSMA,AC10FSMA TYPICAL CHARACTERISTICS Figure 1. iT vs. νT CHARACTERISTIC 100 Figure 2. ITSM RATING MAX. Initial Tj = 125˚C ITSM - Surge On-state Current - A iT - On-state Current - A 140 10 TC = 125˚C 25˚C 1.0 0.1 0 1 2 3 4 ITSM 0 120 N=1 60 Hz 100 50 Hz 80 60 40 20 0 5 1 5 νT - On-state Voltage - V VGT - Gate Trigger Voltage - V VG - Gate Voltage - V Figure 4. GATE CHARACTERISTIC 8 6 PGM = 5 W f ≥ 50 Hz Duty ≤ 10% 2 PG(AV) = 0.5 W 0 0 0.5 1.0 1.5 2.0 50 2.0 Tj = −40 to +125˚C 4 10 Cycles - N Figure 3. GATE RATING 10 2π π 2.5 Mode I, III, IV 1.5 25˚C −40˚C 125˚C 1.0 0.5 0 3.0 0 10 IG - Gate Current - A 20 30 40 IGT - Gate Trigger Current - mA Figure 5. IGT vs. TA CHARACTERISTIC Figure 6. VGT vs. TA CHARACTERISTIC 1000 100 10 1 −40 1.2 1.0 0.8 0.6 0.4 0.2 0 0 40 80 Mode I, III, IV 1.4 VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA Mode I, III, IV 120 TA - Ambient Temperature - °C −40 0 40 80 TA - Ambient Temperature - °C www.kersemi.com 120 100 AC12DSMA,AC10FSMA Figure 7. iGT vs. τ CHARACTERISTIC Figure 8. νGT vs. τ CHARACTERISTIC 5 Mode I, III, IV νGT - Gate Trigger Voltage - V iGT - Gate Trigger Current - mA 10000 1000 100 10 1 Mode I, III, IV 4 3 2 1 0 1 10 100 1000 1 10 τ - Pulse Width - µs IH - Holding Current - mA 100 10 −20 0 20 40 60 80 100 120 TA - Ambient Temperature - °C 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 6 8 10 12 14 16 18 20 22 24 Figure 12. TA vs. IT(RMS) RATING 140 TA - Ambient Temperature - °C 140 TC - Case Temperature - °C 4 IT(RMS) - Effective On-state Current - A Figure 11. TC vs. IT(RMS) RATING 120 100 80 60 40 20 0 1000 Figure 10. PT(AV) vs. IT(RMS) CHARACTERISTIC PT(AV) - On-state Average Power Dissipation - W Figure 9. IH vs. TA CHARACTERISTIC 1000 1 100 τ - Pulse Width - µs 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 22 24 IT(RMS) - Effective On-state Current - A www.kersemi.com 0 1.0 2.0 IT(RMS) - Effective On-state Current - A AC12DSMA,AC10FSMA Figure 13. Zth CHARACTERISTIC Zth - Transient Thermal Impedance - °C/W 100 Junction to ambient 10 Junction to case 1 0.1 0.1 1 10 100 Cycles (50 Hz) www.kersemi.com 1k 10 k 100 k