ACE633 60V Complementary Enhancement Mode Field Effect Transistor Description The ACE633 uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Features N-Channel VDS(V)=60V ID=5A RDS(ON) <35mΩ (VGS=10V) <40mΩ (VGS=4.5V) P-Channel VDS(V)=-60V ID=-3.5A RDS(ON) <75mΩ (VGS=-10V) <90mΩ (VGS=-4.5V) Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Typical Parameter Symbol Drain-Source Voltage VDSS 60 -60 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ *AC TA=70℃ ID 5 -3.5 4 -2.8 Drain Current (pulse) * B IDM 22 -22 2 2 1.3 1.3 Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range PD TJ TSTG N-Channel P-Channel Unit A A W -55 to 150 O C -55 to 150 O C VER 1.2 1 ACE633 60V Complementary Enhancement Mode Field Effect Transistor Packaging Type SOP-8 8 7 6 5 1 2 3 4 Ordering information ACE633 XX + H Halogen - free Pb - free FM : SOP-8 Electrical Characteristics (N-Channel) (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. VGS=0V, ID=250uA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS Drain-Source On Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current V VGS=10V, ID=4.5A 27 35 VGS=4.5V, ID=3A 32 40 1.4 3 V VDS=0V, VGS=±20V 100 nA IDSS VDS=48V, VGS=0V 1 uA Forward Transconductance gFS VDS=15V, ID =5.3V 24 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD ISD=1A, VGS=0V 0.73 Is 1 mΩ S 1.0 V 3.1 A VER 1.2 2 ACE633 60V Complementary Enhancement Mode Field Effect Transistor Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn- Off Rise Time tf VDS=30V, VGS=5V, ID=5.3A VGS=4.5V, VDS=30V, RL=6.8Ω ID=-0.5A, RGEN=1Ω 11.26 14.64 3.77 4.9 4.08 5.3 18.12 36.24 17.68 35.36 25 50 8.92 17.84 nC ns Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer capacitance Crss VGS=0V, VDS=30V, f=1MHZ 1062.8 157.26 pF 56.56 Note: A: The value of R θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Typical Characteristics (N-Channel) VER 1.2 3 ACE633 60V Complementary Enhancement Mode Field Effect Transistor VER 1.2 4 ACE633 60V Complementary Enhancement Mode Field Effect Transistor VER 1.2 5 ACE633 60V Complementary Enhancement Mode Field Effect Transistor Electrical Characteristics (P-Channel) (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. VGS=0V, ID=250uA -60 Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS Drain-Source On Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current V VGS=-10V, ID=-4.5A 64 75 VGS=-4.5V, ID=-3A 79 90 -1.7 -2.5 V VDS=0V, VGS=±20V 100 nA IDSS VDS=-48V, VGS=0V -1 uA Forward Transconductance gFS VDS=-10V, ID =-7V 9 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD ISD=-1A, VGS=0V -0.76 -1 Is mΩ S -1.0 V -3 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn- Off Rise Time tf VDS=-30V, VGS=-10V, ID=-7A VGS=-10V, VDS=-30V, RL=10Ω, RGEN=3Ω 15 19 2.5 nC 3 8 16 3.8 7.6 31.5 63 7.5 15 ns Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer capacitance Crss 760 VGS=0V, VDS=-30V, f=1MHZ 90 pF 40 Note: A: The value of R θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.2 6 ACE633 60V Complementary Enhancement Mode Field Effect Transistor Typical Characteristics (P-Channel) VER 1.2 7 ACE633 60V Complementary Enhancement Mode Field Effect Transistor VER 1.2 8 ACE633 60V Complementary Enhancement Mode Field Effect Transistor Packing Information SOP-8 VER 1.2 9 ACE633 60V Complementary Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 10