ACT–F128K8 High Speed
1 Megabit Monolithic FLASH
CIRCUIT TECHNOLOGY
www.aeroflex.com
Features
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Low Power Monolithic 128K x 8 FLASH
TTL Compatible Inputs and CMOS Outputs
Access Times of 60, 70, 90, 120 and 150ns
+5V Programing, +5V Supply
100,000 Erase / Program Cycles
Low Standby Current
Page Program Operation and Internal
Program Control Time
Supports Full Chip Erase
Embedded Erase and Program Algorithms
Supports Full Chip Erase
MIL-PRF-38534 Compliant Circuits Available
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Industry Standard Pinouts
Packaging – Hermetic Ceramic
32 Lead, 1.6" x .6" x .20" Dual-in-line Package (DIP),
Aeroflex code# "P4"
● 32 Lead, .82" x .41" x .125" Ceramic Flat Package
(FP), Aeroflex code# "F6"
● 32 Lead, .82" x .41" x .132" Ceramic Flat Package
(FP Lead Formed), Aeroflex code# "F7"
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Sector Architecture
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8 Equal size sectors of 16K bytes each
Any Combination of Sectors can be erased with one
command sequence.
Commercial, Industrial and Military
Temperature Ranges
DESC SMD Pending
5962-96690 (P4,F6,F7)
Block Diagram – DIP (P4) & Flat Packages (F6,F7)
CE
WE
OE
A0 – A16
Vss
512Kx8
Vcc
8
I/O0-7
Pin Description
I/O0-7
Data I/O
A0–16 Address Inputs
WE
Write Enable
CE
Chip Enable
OE
Output Enable
VCC
Power Supply
VSS
Ground
NC
Not Connected
General Description
The ACT–F128K8 is a high
speed, 1 megabit CMOS
monolithic
Flash
module
designed for full temperature
range military, space, or high
reliability applications.
This device is input TTL and
output CMOS compatible. The
command register is written by
bringing write enable (WE) and
chip enable (CE) to a logic low
level and output enable (OE) to a
logic high level. Reading is
accomplished when WE is high
and CE, OE are both low, see
Figure 9. Access time grades of
60ns, 70ns, 90ns, 120ns and
150ns maximum are standard.
The
ACT–F128K8
is
available
in a
choice of
eroflex Circuit Technology - Advanced Multichip Modules © SCD1676 REV A 5/6/98
General Description, Cont’d,
second. Erase is accomplished by
executing the erase command sequence.
This will invoke the Embedded Erase
Algorithm which is an internal algorithm
that automatically preprograms the array, (if
it is not already programmed before)
executing the erase operation. During
erase, the device automatically times the
erase pulse widths and verifies proper cell
margin.
Also the device features a sector erase
architecture. The sector mode allows for
16K byte blocks of memory to be erased
and reprogrammed without affecting other
blocks. The ACT-F128K8 is erased when
shipped from the factory.
The device features single 5.0V power
supply operation for both read and write
functions.
lnternally
generated
and
regulated voltages are provided for the
program and erase operations. A low VCC
detector
automatically
inhibits
write
operations on the loss of power. The end of
program or erase is detected by Data
Polling of D7 or by the Toggle Bit feature on
D6. Once the end of a program or erase
cycle has been completed, the device
internally resets to the read mode.
All bits of each die, or all bits within a
sector of a die, are erased via
Fowler-Nordhiem tunneling. Bytes are
programmed one byte at a time by hot
electron injection.
A DESC Standard Military Drawing
(SMD) number is pending.
hermetically sealed ceramic packages; a
32 lead .82" x .41" x .125" flat package in
both formed or unformed leads or a 32 pin
1.6"x.60" x.20" DIP package for operation
over the temperature range -55°C to
+125°C
and
military
environmental
conditions.
The flash memory is organized as
128Kx8
bits and is designed to be
programmed in-system with the standard
system 5.0V Vcc supply. A 12.0V VPP is
not required for write or erase operations.
The device can also be reprogrammed with
standard EPROM programmers (with the
proper socket).
The standard ACT–F128K8 offers
access times between 60ns and 150ns,
allowing
operation
of
high-speed
microprocessors without wait states. To
eliminate bus contention, the device has
separate chip enable (CE), write enable
(WE) and output enable (OE) controls. The
ACT–F128K8 is command set compatible
with JEDEC standard 1 Mbit EEPROMs.
Commands are written to the command
register using standard microprocessor
write timings. Register contents serve as
input to an internal state-machine which
controls the erase and programming
circuitry. Write cycles also internally latch
addresses and data needed for the
programming and erase operations.
Reading data out of the device is similar
to reading from 12.0V Flash or EPROM
devices. The ACT–F128K8 is programmed
by executing the program command
sequence. This will invoke the Embedded
Program Algorithm which is an internal
algorithm that automatically times the
program pulse widths and verifies proper
cell margin. Typically, each sector can be
programmed and verified in less than 0.3
Aeroflex Circuit Technology
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SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
z
Absolute Maximum Ratings
Parameter
Symbol
Range
Units
Case Operating Temperature
TC
-55 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Supply Voltage Range
VCC
-2.0 to +7.0
V
Signal Voltage Range (Any Pin Except A9) Note 1
VG
-2.0 to +7.0
V
Maximum Lead Temperature (10 seconds)
300
°C
Data Retention
10
Years
100,000 Minimum
Endurance (Write/Erase cycles)
-2.0 to +14.0
VID
A9 Voltage for sector protect, Note 2
V
Note 1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may undershoot VSS to -2.0v for periods of
up to 20ns. Maximum DC voltage on input and I/O pins is VCC + 0.5V. During voltage transitions, inputs and I/O pins may
overshoot to VCC + 2.0V for periods up to 20 ns.
Note 2. Minimum DC input voltage on A9 is -0.5V. During voltage transitions, A9 may undershoot VSS to -2.0V for periods of up to 20ns.
Maximum DC input voltage on A9 is +12.5V which may overshoot to 14.0V for periods up to 20ns.
Normal Operating Conditions
Symbol
Parameter
Minimum
Maximum
Units
VCC
Power Supply Voltage
+4.5
+5.5
V
VIH
Input High Voltage
+2.0
VCC + 0.5
V
VIL
Input Low Voltage
-0.5
+0.8
V
Tc
Operating Temperature (Military)
-55
+125
°C
VID
A9 Voltage for sector protect
11.5
12.5
V
Capacitance
(VIN= 0V, f = 1MHz, Tc = 25°C)
Symbol
CAD
COE
Parameter
Maximum
Units
A0 – A16 Capacitance
15
pF
OE Capacitance
15
pF
CWE
Write Enable Capacitance
15
pF
CCE
Chip Enable Capacitance
15
pF
I/O0 – I/O7 Capacitance
15
pF
CI/O
Parameters Guaranteed but not tested
DC Characteristics – CMOS Compatible
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C, unless otherwise indicated)
Parameter
Sym
Speeds 60, 70, 90, 120 & 150ns
Conditions
Minimum
Maximum
Units
Input Leakage Current
ILI
VCC = 5.5V, VIN = GND to VCC
10
µA
Output Leakage Current
ILO
VCC = 5.5V, VIN = GND to VCC
10
µA
Active Operating Supply Current for Read (1)
ICC1
CE = VIL, OE = VIH, f = 5MHz
35
mA
Active Operating Supply Current for Program or Erase (2)
ICC2
CE = VIL, OE = VIH
50
mA
Operating Standby Supply Current
ICC3
VCC = 5.5V, CE = VIH, f = 5MHz
1.6
mA
Output Low Voltage
VOL
IOL = +8.0 mA, VCC = 4.5V
0.45
V
Output High Voltage
VOH
IOH = –2.5 mA, VCC = 4.5V
Low Power Supply Lock-Out Voltage (4)
VLKO
0.85 x VCC
V
3.2
V
Note 1. The Icc current listed includes both the DC operating current and the frequency dependent component (At 6 MHz). The frequency
component typically is less than 2 mA/MHz, with OE at VIN.
Note 2. Icc active while Embedded Algorithm (Program or Erase) is in progress.
Note 3. DC Test conditions: VIL = 0.3V, VIH = VCC - 0.3V, unless otherwise indicated.
Note 4. Parameter Guaranteed by design, but not tested.
Aeroflex Circuit Technology
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SCD1676 REV A 5/6/98
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AC Characteristics – Read Only Operations
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Symbol
Parameter
–60
–70
–90
–120
–150
JEDEC Stand’d Min Max Min Max Min Max Min Max Min Max
Read Cycle Time
tAVAV
tRC
60
70
90
120
150
Units
ns
Address Access Time
tAVQV
tACC
60
70
90
120
150
ns
Chip Enable Access Time
tELQV
tCE
60
70
90
120
150
ns
Output Enable to Output Valid
tGLQV
tOE
30
35
40
50
55
ns
Chip Enable to Output High Z (1)
tEHQZ
tDF
20
20
25
30
35
ns
Output Enable High to Output High Z(1)
tGHQZ
tDF
35
ns
Output Hold from Address, CE or OE Change, Whichever is First
tAXQX
tOH
20
0
20
0
25
0
30
0
0
ns
Note 1. Guaranteed by design, but not tested
AC Characteristics – Write/Erase/Program Operations, WE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Symbol
Parameter
–60
–70
–90
–120
–150
JEDEC Stand’d Min Max Min Max Min Max Min Max Min Max
Units
Write Cycle Time
tAVAC
tWC
60
70
90
120
150
ns
Chip Enable Setup Time
tELWL
tCE
0
0
0
0
0
ns
Write Enable Pulse Width
tWLWH
tWP
30
35
45
50
50
ns
Address Setup Time
tAVWL
tAS
0
0
0
0
0
ns
Data Setup Time
tDVWH
tDS
30
30
45
50
50
ns
Data Hold Time
tWHDX
tDH
0
0
0
0
0
ns
Address Hold Time
tWLAX
tAH
45
45
45
50
50
ns
Write Enable Pulse Width High
tWHWL
tWPH
20
20
20
20
20
ns
Duration of Byte Programming Operation
Typ = 16 µs
tWHWH1
Sector Erase Time
tWHWH2
Read Recovery Time before Write
14 TYP 14 TYP 14 TYP 14 TYP 14 TYP
60
tGHWL
tVCE
Vcc Setup Time
60
60
60
Sec
0
0
0
0
0
µs
50
50
50
50
50
µs
Chip Programming Time
tWHWH3
Chip Erase Time
60
µs
12.5
12.5
12.5
12.5
12.5
Sec
120
120
120
120
120
Sec
AC Characteristics – Write/Erase/Program Operations, CE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Parameter
Symbol
–60
–70
–90
–120
–150
JEDEC Stand’d Min Max Min Max Min Max Min Max Min Max
Write Cycle Time
tAVAC
tWC
60
70
90
Write Enable Setup Time
tWLEL
tWS
0
0
0
Chip Enable Pulse Width
tELEH
tCP
30
35
45
120
Units
150
ns
0
0
ns
50
50
ns
Address Setup Time
tAVEL
tAS
0
0
0
0
0
ns
Data Setup Time
tDVEH
tDS
30
30
45
50
50
ns
Data Hold Time
tEHDX
tDH
0
0
0
0
0
ns
Address Hold Time
tELAX
tAH
45
45
45
50
50
ns
Chip Select Pulse Width High
tEHEL
tCPH
20
20
20
20
20
Duration of Byte Programming
tWHWH1
Sector Erase Time
tWHWH2
Read Recovery Time
tGHEL
Chip Programming Time
Chip Erase Time
Aeroflex Circuit Technology
tWHWH3
4
ns
14 TYP 14 TYP 14 TYP 14 TYP 14 TYP
60
0
60
0
60
0
60
0
60
0
µs
Sec
ns
12.5
12.5
12.5
12.5
12.5
Sec
120
120
120
120
120
Sec
SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
programming, the device will draw active current until the
operation is completed.
Device Operation
The ACT-F128K8 Monolithic module is composed of one,
1 megabit flash EEPROM.
Programming of the ACT-F128K8 is accomplished by
executing the program command sequence.
The
program algorithm, which is an internal algorithm,
automatically times the program pulse widths and
verifies proper cell status. Sectors can be programed
and verified in less than 0.3 second.
Erase is
accomplished by executing the erase command
sequence. The erase algorithm, which is internal,
automatically preprograms the array if it is not already
programed before executing the erase operation. During
erase, the device automatically times the erase pulse
widths and verifies proper cell status. The entire
memory is typically erased and verified in 3 seconds
(if pre-programmed). The sector mode allows for 16K
byte blocks of memory to be erased and reprogrammed
without affecting other blocks.
WRITE
Device erasure and programming are accomplished via
the command register. The contents of the register
serve as input to the internal state machine. The state
machine outputs dictate the function of the device.
The command register itself does not occupy an
addressable memory location. The register is a latch
used to store the command, along with address and data
information needed to execute the command. The
command register is written by bringing WE to a logic
low level (VIL), while CE is low and OE is at VIH.
Addresses are latched on the falling edge of WE or CE,
whichever happens later. Data is latched on the rising
edge of the WE or CE whichever occurs first. Standard
microprocessor write timings are used. Refer to AC
Program Characteristics and Waveforms, Figures 3,
8 and 13.
Bus Operation
Command Definitions
READ
The ACT-F128K8 has two control functions, both of
which must be logically active, to obtain data at the
outputs. Chip Enable (CE) is the power control and
should be used for device selection. Output-Enable (OE)
is the output control and should be used to gate data to
the output pins of the chip selected. Figure 7 illustrates
AC read timing waveforms.
Device operations are selected by writing specific
address and data sequences into the command register.
Table 3 defines these register command sequences.
READ/RESET COMMAND
The read or reset operation is initiated by writing the
read/reset command sequence into the command
register. Microprocessor read cycles retrieve array data
from the memory. The device remains enabled for reads
until the command register contents are altered.
The device will automatically power-up in the read/reset
state. In this case, a command sequence is not required
to read data. Standard microprocessor read cycles will
retrieve array data.
The device will automatically
power-up in the read/reset state. In this case, a
command sequence is not required to read data.
Standard Microprocessor read cycles will retrieve array
data. This default value ensures that no spurious
alteration of the memory content occurs during the
power transition. Refer to the AC Read Characteristics
and Figure 7 for the specific timing parameters.
OUTPUT DISABLE
With Output-Enable at a logic high level (VIH), output
from the device is disabled. Output pins are placed in a
high impedance state.
STANDBY MODE
The ACT-F128K8 has two standby modes, a CMOS
standby mode (CE input held at Vcc + 0.5V), where the
current consumed is typically less than 400 µA; and a
TTL standby mode (CE is held VIH) is approximately 1
mA. In the standby mode the outputs are in a high
impedance state, independent of the OE input.
If the device is deselected during erasure or
Table 2 – Sector Addresses Table
Table 1 – Bus Operations
Operation
CE OE WE A0 A1 A9
I/O
A14
Address Range
READ
L
L
H
A0 A1 A9
DOUT
SA0
0
0
0
00000h – 03FFFh
STANDBY
H
X
X
X
HIGH Z
SA1
0
0
1
04000h – 07FFFh
HIGH Z
SA2
0
1
0
08000h – 0BFFFh
SA3
0
1
1
0C000h – 0FFFFh
SA4
1
0
0
10000h – 13FFFh
SA5
1
0
1
14000h – 17FFFh
SA6
1
1
0
18000h – 1BFFFh
SA7
1
1
1
1C000h – 1FFFFh
X
OUTPUT DISABLE
L
H
H
X
WRITE
L
H
L
A0 A1 A9
ENABLE SECTOR
PROTECT
VERIFY SECTOR
PROTECT
Aeroflex Circuit Technology
L
L
VID
L
L
H
X
L
X
X
X
H
X
VID
VID
A16 A15
DIN
X
Code
5
SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
Table 3 — Commands Definitions
Command
Sequence
Read/Reset
Bus
Write
Cycle
First Bus Write Second Bus Write Third Bus Write
Cycle
Cycle
Cycle
Fourth Bus
Read/Write
Cycle
Req’d
Addr
Data
Addr
Data
Addr
Data
Addr
Data
4
5555H
AAH
2AAAH
55H
5555H
F0H
RA
RD
Fifth Bus Write Sixth Bus Write
Cycle
Cycle
Addr
Data
Addr
Data
Byte Program
6
5555H
AAH
2AAAH
55H
5555H
A0H
PA
PD
Chip Erase
6
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
5555H
10H
Sector Erase
6
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
SA
30H
NOTES:
1. Address bit A15 = X = Don't Care. Write Sequences may be initiated with A15 in either state.
2. Address bit A16 = X = Don't Care for all address commands except for Program Address (PA) and Sector Address (SA).
3. RA = Address of the memory location to be read
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse.
SA = Address of the sector to be erased. The combination of A16, A15, A14 will uniquely select any sector.
4. RD = Data read from location RA during read Operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE.
BYTE PROGRAMING
device prior to erase. Upon executing the Embedded
Erase Algorithm command sequence (Figure 4) the
device will automatically program and verify the entire
memory for an all zero data pattem prior to electrical
erase. The erase is performed concurrently on all
sectors at the same time . The system is not required to
provide any controls or timings during these operations.
Note: Post Erase data state is all "1"s.
The automatic erase begins on the rising edge of the last
WE pulse in the command sequence and terminates
when the data on D7 is "1" (see Write Operation Status
section - Table 3) at which time the device retums to read
mode. See Figures 4 and 9.
The device is programmed on a byte-byte basis.
Programming is a four bus cycle operation. There are
two "unlock" write cycles. These are followed by the
program set-up command and data write cycles.
Addresses are latched on the falling edge of CE or WE,
whichever occurs later, while the data is latched on the
rising edge of CE or WE whichever occurs first. The
rising edge of CE or WE (whichever happens first)
begins programming using the Embedded Program
Algorithm.
Upon executing the program algorithm
command sequence the system is not required to
provide further controls or timings. The device will
automatically provide adequate internally generated
program pulses and verify the programmed cell.
The automatic programming operation is completed
when the data on D7 (also used as Data Polling) is
equivalent to data written to this bit at which time the
device returns to the read mode and addresses are no
longer latched. Therefore, the device requires that a
valid address be supplied by the system at this particular
instance of time for Data Polling operations. Data Polling
must be performed at the memory location which is
being programmed.
Any commands written to the chip during the Embedded
Program Algorithm will be ignored.
Programming is allowed in any sequence and across
sector boundaries. Beware that a data "0" cannot be
programmed back to a “1". Attempting to do so may
cause the device to exceed programming time limits (D5
= 1) or result in an apparent success, according to the
data polling algorithm, but a read from reset/read mode
will show that the data is still “0". Only erase operations
can convert “0"s to “1"s.
Figure 3 illustrates the programming algorithm using
typical command strings and bus operations.
SECTOR ERASE
Sector erase is a six bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"setup" command. Two more "unlock" write cycles are
then followed by the sector erase command. The sector
address (any address location within the desired sector)
is latched on the falling edge of WE, while the command
(30H) is latched on the rising edge of WE. After a
time-out of 80µs from the rising edge of the last sector
erase command, the sector erase operation will begin.
Multiple sectors may be erased concurrently by writing
the six bus cycle operations as described above. This
sequence is followed with writes of the sector erase
command to addresses in other sectors desired to be
concurrently erased. The time between writes must be
less than 80µs otherwise that command will not be
accepted and erasure will start. It is recommended that
processor interrupts be disabled during this time to
guarantee this condition.
The interrupts can be
re-enabled after the last Sector Erase command is
written. A time-out of 80µs from the rising edge of the
last WE will initiate the execution of the Sector Erase
command(s). If another falling edge of the WE occurs
within the 80µs time-out window the timer is reset.
(Monitor D3 to determine if the sector erase timer
window is still open, see section D3, Sector Erase
Timer.) Any commarid other than Sector Erase during
this period will reset the device to read mode, ignoring
the previous command string. In that case, restart the
erase on those sectors and allow them to complete.
CHIP ERASE
Chip erase is a six bus cycle operation. There are two
'unlock' write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are
then followed by the chip erase command.
Chip erase does not require the user to program the
Aeroflex Circuit Technology
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SCD1676 REV A 5/6/98
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POWER-UP WRITE INHIBIT
Loading the sector erase buffer may be done in any
sequence and with any number of sectors (0 to 7).
Sector erase does not require the user to program the
device prior to erase.
The device automatically
programs all memory locations in the sector(s) to be
erased prior to electrical erase. When erasing a sector
or sectors the remaining unselected sectors are not
affected. The system is not required to provide any
controls or timings during these operations. Post Erase
data state is all "1"s.
The automatic sector erase begins after the 80µs time
out from the rising edge of the WE pulse for the last
sector erase command pulse and terminates when the
data on D7, Data Polling, is “1" (see Write Operatlon
Status secton) at which time the device returns to read
mode. Data Polling must be performed at an address
within any of the sectors being erased.
Figure 4 illustrates the Embedded Erase Algorithm.
Power-up of the device with WE = CE = VIL and OE =
VIH will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to the
read mode on power-up.
Write Operation Status
D7
DATA POLLING
The ACT-F128K8 features Data Polling as a method to
indicate to the host that the internal algorithms are in
progress or completed.
During the program algorithm, an attempt to read the
device will produce compliment data of the data last
written to D7. Upon completion of the programming
algorithm an attempt to read the device will produce the
true data last written to D7. Data Polling is valid after the
rising edge of the fourth WE pulse in the four write pulse
sequence.
During the erase algorithm, D7 will be "0" until the erase
operation is completed. Upon completion data at D7 is
"1". For chip erase, the Data Polling is valid after the
rising edge of the sixth WE pulse in the six write pulse
sequence. For sector erase, the Data Polling is Valid
after the last rising edge of the sector erase WE pulse.
The Data Polling feature is only active during the
programming algorithm, erase algorithm, or sector erase
time-out.
See Figures 6 and 10 for the Data Polling specifications.
Data Protection
The ACT-F128K8 is designed to offer protection against
accidental erasure or programming caused by spurious
system level singles that may exist during power
transitions. During power up the device automatically
resets the internal state machine in the read mode. Also,
with its control register architecture, alteration of the
memory content only occurs after successful completion
of specific multi-bus cycle command sequences.
The device also incorporates several features to prevent
inadvertent write cycles resulting from Vcc power-up and
power-down transitions or system noise.
LOW Vcc WRITE INHIBIT
D6
TOGGLE BIT
To avoid initiation of a write cycle during Vcc power-up
and power-down, a write cycle is locked out for VCC less
than 3.2V (typically 3.7V). If VCC < VLKO, the command
register is disabled and all internal program/erase
circuits are disabled. Under this condition the device will
reset to read mode. Subsequent writes will be ignored
until the Vcc level is greater than VLKO. It is the users
responsibility to ensure that the control pins are logically
correct to prevent unintentional writes when Vcc is above
3.2V.
The ACT-F128K8 also features the "Toggle Bit" as a
method to indicate to the host system that algorithms are
in progress or completed.
During a program or erase algorithm cycle, successive
attempts to read data from the device will result in D6
toggling between one and zero. Once the program or
erase algorithm cycle is completed, D6 Will stop toggling
and valid data will be read on successive attempts.
During programming the Toggle Bit is valid after the
rising edge of the fourth WE pulse in the four write pulse
sequence. For chip erase the Toggle Bit is valid after the
rising edge of the sixth WE pulse in the six write pulse
sequence. For Sector erase, the Toggle Bit is valid after
the last rising edge of the sector erase WE pulse. The
Toggle Bit is active during the sector time out.
See Figure 1 and 5.
WRITE PULSE GLITCH PROTECTION
Noise pulses of less than 5ns (typical) on OE, CE or WE
will not initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding anyone of OE = VIL, CE =
VIH or WE = VIH. To initiate a write cycle CE and WE
must be logical zero while OE is a logical one.
Aeroflex Circuit Technology
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SCD1676 REV A 5/6/98
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Table 4 — Hardware Sequence Flags
In Progress
Exceeding Time Limits
Status
D7
D6
Auto-Programming
D7
Toggle
0
0
0
0
Toggle
0
0
1
Erase in Auto Erase
0
Toggle
0
1
1
Auto-Programming
D7
Toggle
1
0
0
Programming in Auto Erase
T0
Toggle
1
0
1
0
Toggle
1
1
1
Programming in Auto Erase
Erase in Auto Erase
D5
EXCEEDED TIMING LIMITS
D2 – D0
Reserved for
future use
Reserved for
future use
Sector Protection
Algorithims
D5 will indicate if the program or erase time has
exceeded the specified limits. Under these conditions
D5 will produce a "1". The Program or erase cycle was
not successfully completed. Data Polling is the only
operation function of the device under this condition.
The CE circuit will partially power down the device under
these conditions by approximately 8 mA per chip. The
OE and WE pins will control the output disable functions
as shown in Table 1. To reset the device, write the reset
command sequence to the device. This allows the
system to continue to use the other active sectors in the
device.
SECTOR PROTECTION
The ACT-F128K8 features hardware sector protection
which will disable both program and erase operations to
an individual sector or any group of sectors. To activate
this mode, the programming equipment must force VID
on control pin OE and address pin A9. The sector
addresses should be set using higher address lines A16,
A15, and A14. The protection mechanism begins on the
falling edge of the WE pulse and is terminated with the
rising edge of the same.
It is also possible to verify if a sector is protected during
the sector protection operation. This is done by setting
CE = OE = VIL and WE = VIH (A9 remains high at VID).
Reading the device at address location XXX2H, where
the higher order addresses (A16, A15 and A14) define a
particular sector, will produce 01H at data outputs D0 D7, for a protected sector.
D4 - HARDWARE SEQUENCE FLAG
If the device has exceeded the specified erase or
program time and D5 is "1", then D4 Will indicate which
step in the algorithm the device exceeded the limits. A
"0" in D4 indicates in programming, a "1" indicates an
erase. (See Table 4)
D3
SECTOR ERASE TIMER
SECTOR UNPROTECT
The ACT-F128K8 also features a sector unprotect mode,
so that a protected sector may be unprotected to
incorporate any changes in the code. All sectors should
be protected prior to unprotecting any sector.
To activate this mode, the programming equipment must
force VID on control pins OE, CE, and address pin A9.
The address pins A6, A7, and A12 should be set to VIH,
and A6 = VIL. The unprotection mechanism begins on
the falling edge of the WE pulse and is terminated with
the rising edge of the same.
It is also possible to determine if a sector is unprotected
in the system by writing the autoselect command.
Performing a read operation at address location XXX2H,
where the higher order addresses (A16, A15, and A14)
define a particular sector address, will produce 00H at
data outputs (D0-D7) for an unprotected sector.
After the completion of the initial sector erase command
sequence the sector erase time-out will begin. D3 will
remain low until the time-out is complete. Data Polling
and Toggle Bit are valid after the initial sector erase
command sequence.
If Data Polling or the Toggle Bit indicates the device has
been written with a valid erase command, D3 may be
used to determine if the sector erase timer window is still
open. If D3 is high ("1") the internally controlled erase
cycle has begun; attempts to write subsequent
commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or
Toggle Bit. If D3 is low ("0"), the device will accept
additional sector erase commands. To ensure the
command has been accepted, the software should check
the status of D3 prior to and following each subsequent
sector erase command. If D3 were high on the second
status check, the command may not have been
accepted.
Aeroflex Circuit Technology
D5 D4 D3
8
SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
Figure 1
AC Waveforms for Toggle Bit During Embedded Algorithm Operations
CE
tOEH
WE
tOES
OE
Data
D0-D7
D6=Toggle
D6=Toggle
D6
Stop Toggle
D0-D7
Valid
tOE
Figure 2
AC Test Circuit
Current Source
IOL
To Device Under Test
CL =
50 pF
Parameter
Input Pulse Level
Input Rise and Fall
VZ ~ 1.5 V (Bipolar Supply) Input and Output Timing Reference
Output Lead Capacitance
Typical
0 – 3.0
5
1.5
50
Units
V
ns
V
pF
IOH
Current Source
Notes:
1) VZ is programmable from -2V to +7V. 2) IOL and IOH programmable from 0 to 16 mA. 3) Tester Impedance
ZO = 75Ω. 4) VZ is typically the midpoint of VOH and VOL. 5) IOL and IOH are adjusted to simulate a typical
resistance load circuit. 6) ATE Tester includes jig capacitance.
Aeroflex Circuit Technology
9
SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
Figure 3
Programming Algorithm
Bus
Operations
Command
Sequence
Comments
Program
Valid Address/Data Sequence
Standby
Write
Read
Data Polling to Verify Programming
Standby
Compare Data Output to Data Expected
Start
Write Program Command Sequence
(See Below)
Data Poll Device
Increment
Address
No
Last Address
?
Yes
Programming Complete
Program Command Sequence (Address/Command):
5555H/AAH
2AAAH/55H
5555H/A0H
Programming Address/Program Data
Aeroflex Circuit Technology
10
SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
Figure 4
Erase Algorithm
Bus
Operations
Command
Sequence
Comments
Standby
Write
Erase
Read
Data Polling to Verify Erasure
Standby
Compare Output to FFH
Start
Write Erase Command Sequence
(See Below)
Data Poll or Toggle Bit
Successfully Completed
Erasure Completed
Chip Erase Command Sequence
(Address/Command)
Individual Sector/Multiple Sector
Erase Command Sequence
(Address/Command)
5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/80H
5555H/80H
5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/10H
Sector Address/30H
Sector Address/30H
Additional Sector
Erase Commands
are Optional
Sector Address/30H
Note 1. To Ensure the command has been accepted, the system software should check the
status of D3 prior to and following each subsequent sector erase command. If D3 were high on
the second status check, the command may not have been accepted.
Aeroflex Circuit Technology
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SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
Figure 5
Toggle Bit Algorithm
Figure 6
Data Polling Algorithm
Start
Read Byte
D0-D7
Address = VA
D6 = Toggle
?
Start
VA = Byte Address for Programming
= Any of the Sector Addresses
within the sector being erased
during sector erase operation
= XXXXH during Chip Erase
Read Byte
D0-D7
Address = VA
No
D7 = Data
?
No
D5 = 1
?
D5 = 1
?
Yes
Yes
Read Byte
D0-D7
Address = VA
D6 =
Toggle?
(Note 1)
Yes
Read Byte
D0-D7
Address = VA
D7 =
Toggle?
(Note 1)
No
Pass
No
Fail
Yes
Pass
Fail
Note 1. D7 is rechecked even if D5 = "1" because D7 may change
simultaneously with D5.
Note 1. D6 is rechecked even if D5 = "1" because D6 may stop toggling at
the same time as D5 changes to "1".
Aeroflex Circuit Technology
Yes
No
Yes
No
VA = Byte Address for Programming
= Any of the Sector Addresses
within the sector being erased
during sector erase operation
= XXXXH during Chip Erase
12
SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
Figure 7
AC Waveforms for Read Operations
tRC
Addresses
Addresses Stable
tACC
CE
tDF
OE
tOE
WE
tCE
tOH
High Z
Outputs
Output Valid
High Z
Figure 8
Write/Erase/Program
Operation, WE Controlled
Data Polling
Addresses
5555H
PA
tWC
tAS
PA
tRC
tAH
CE
tGHWL
OE
tWP
tWHWH1
tWPH
WE
tCE
tDF
tOE
tDH
AOH
Data
D7
PD
DOUT
tDS
tOH
5.0V
tCE
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the deviced.
4. Dout is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
Aeroflex Circuit Technology
13
SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
Figure 9
AC Waveforms Chip/Sector
Erase Operations
Data Polling
tAH
5555H
Addresses
2AAAH
5555H
5555H
2AAAH
SA
tAS
CE
tGHWL
OE
tWP
WE
tCE
tWPH
tDH
AAH
Data
55H
80H
AAH
55H
10H/30H
tDS
VCC
tVCE
Notes:
1. SA is the sector address for sector erase.
Figure 10
AC Waveforms for Data Polling
During Embedded Algorithm Operations
tCH
CE
tDF
tOE
OE
tOEH
tCE
WE
tOH
*
D7
D7
High Z
D7=
Valid Data
tWHWH1 or 2
D0-D6
D0–D6
Valid Data
D0–D6=Invalid
tOE
* D7=Valid Data (The device has completed the Embedded operation).
Aeroflex Circuit Technology
14
SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
Figure 11
Sector Protection Algorithm
Start
Set Up Sector Address
(A16, A15, A14)
PLSCNT = 1
OE = VID
A9 = VID, CE = VIL
Activate WE Pulse
Time Out 100µs
Increment
PLSCNT
Power Down OE
WE = VIH
CE = OE = VIH
A9 Should Remain VID
Read From Sector
Address = SA, A0 = 0, A1 = 1, A6 = 0
No
No
Data = 01H
?
PLSCNT = 25
?
Yes
Yes
Device Failure
Protect
Another
Sector?
Yes
No
Remove VID from A9
Write Reset Command
Sector Protection
Complete
Aeroflex Circuit Technology
15
SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
Figure 12
Sector Unprotect Algorithm
Start
Set VCC = 5.0 V
Protect All Sectors
PLSCNT = 1
Set Up Sector Address
Unprotected Mode
(A12 = A7 = VIH, A6 = VIL)
Set VCC = 5.0 V
Set
OE = CE = A9 = VID
Activate WE Pulse
Increment
PLSCNT
Time Out 10ms
Set OE = CE = VIL
Remove VID from A9
Set VCC = 4.25 V
Write Autoselect
Command Sequence
Setup Sector Address SA0
Set A1 = 1, A0 = 0
Read Data
From Device
No
Increment
Sector Address
No
Data = 00H
?
Write Reset
Command
PLSCNT = 1000
?
Yes
Yes
Device Failure
No
Sector
Address = SA7
?
Yes
Set VCC = 5.0 V
Notes:
SA0 = Sector Address for initial sector
SA7 = Sector Address for last sector
Please refer to Table 2
Write Reset Command
Sector Unprotect
Completed
Aeroflex Circuit Technology
16
SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
Figure 13
Write/Erase/Program Operation, CE Controlled
Data Polling
Addresses
5555H
PA
tWC
tAS
PA
tAH
WE
tGHEL
OE
tCP
CE
tWHWH1
tCPH
tWS
tDH
AOH
Data
D7
PD
DOUT
tDS
5.0V
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
Aeroflex Circuit Technology
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SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
Pin Numbers & Functions
32 Pins — DIP Package
1
NC
17
I/O3
2
A16
18
I/O4
3
A15
19
I/O5
4
A12
20
I/O6
5\
A7
21
I/O7
6
A6
22
CE
7
A5
23
A10
8
A4
24
OE
9
A3
25
A11
10
A2
26
A9
11
A1
27
A8
12
A0
28
A13
13
I/O0
29
A14
14
I/O1
30
NC
15
I/O2
31
WE
16
VSS
32
VCC
Package Outline "P4" — .590" x 1.67" DIP Package
1.623
MAX
Pin 32
.165
MAX
Pin 1
.604
MAX
Pin 1
Identifier
.100
TYP
.020
.016
TYP
.055
.045
.060
.040
TYP
.125
MIN
.012
.009
.610
.590
All dimensions in inches
Aeroflex Circuit Technology
18
SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
Pin Numbers & Functions
32 Pins — Flat Package
1
NC
17
I/O3
2
A16
18
I/O4
3
A15
19
I/O5
4
A12
20
I/O6
5
A7
21
I/O7
6
A6
22
CE
7
A5
23
A10
8
A4
24
OE
9
A3
25
A11
10
A2
26
A9
11
A1
27
A8
12
A0
28
A13
13
I/O0
29
A14
14
I/O1
30
NC
15
I/O2
31
WE
16
VSS
32
VCC
Package Outline "F6" — 32 Lead, Ceramic Flat Package
.830
MAX
Pin 17
Pin 32
.415
MAX
Pin 16
Pin 1
.400
MIN
All dimensions in inches
Aeroflex Circuit Technology
.125 MAX
+.002
.005 -.001
.017
±.002
.750
(15 spaces at .050)
2 sides
19
SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
Pin Numbers & Functions
32 Pins — Flat Package
1
NC
17
I/O3
2
A16
18
I/O4
3
A15
19
I/O5
4
A12
20
I/O6
5
A7
21
I/O7
6
A6
22
CE
7
A5
23
A10
8
A4
24
OE
9
A3
25
A11
10
A2
26
A9
11
A1
27
A8
12
A0
28
A13
13
I/O0
29
A14
14
I/O1
30
NC
15
I/O2
31
WE
16
VSS
32
VCC
Package Outline "F7" — 32 Lead, Ceramic Flat Package
.132
MAX
.006
TYP
.830
MAX
Base Plane
.125
MAX
Pin 17
Pin 32
.415
MAX
.530
±.005
.068
TYP
.025
TYP
Pin 1
.017
±.002
.750
(15 spaces at .050)
2 sides
Pin 16
+.002
.005 -.001
0° / -4°
.030
TYP
Seating Plane
All dimensions in inches
Aeroflex Circuit Technology
20
SCD1676 REV A 5/6/98
Plainview NY (516) 694-6700
CIRCUIT TECHNOLOGY
Ordering Information
Model Number
DESC Drawing Number
Speed
Package
ACT–F128K8N–150F6Q
5962-9669001HTC*
150 ns
Flat Pack
ACT–F128K8N–120F6Q
5962-9669002HTC*
120 ns
Flat Pack
ACT–F128K8N–090F6Q
5962-9669003HTC*
90 ns
Flat Pack
ACT–F128K8N–070F6Q
5962-9669004HTC*
70 ns
Flat Pack
ACT–F128K8N–060F6Q
5962-9669005HTC*
60 ns
Flat Pack
ACT–F128K8N–150F7Q
5962-9669001HUC*
150 ns
Flat Pack (Formed)
ACT–F128K8N–120F7Q
5962-9669002HUC*
120 ns
Flat Pack (Formed)
ACT–F128K8N–090F7Q
5962-9669003HUC*
90 ns
Flat Pack (Formed)
ACT–F128K8N–070F7Q
5962-9669004HUC*
70 ns
Flat Pack (Formed)
ACT–F128K8N–060F7Q
5962-9669005HUC*
60 ns
Flat Pack (Formed)
ACT–F128K8N–150P4Q
5962-9669001HYC*
150 ns
DIP Pack
ACT–F128K8N–120P4Q
5962-9669002HYC*
120 ns
DIP Pack
ACT–F128K8N–090P4Q
5962-9669003HYC*
90 ns
DIP Pack
ACT–F128K8N–070P4Q
5962-9669004HYC*
70 ns
DIP Pack
ACT–F128K8N–060P4Q
5962-9669005HYC*
60 ns
DIP Pack
* Pending
Part Number Breakdown
ACT– F 128 8 N– 090 F6 Q
Aeroflex Circuit
Technology
Memory Type
Screening
F = FLASH EEPROM
C = Commercial Temp, 0°C to +70°C
I = Industrial Temp, -40°C to +85°C
T = Military Temp, -55°C to +125°C
M = Military Temp, -55°C to +125°C, Screening *
Q = MIL-PRF-38534 Compliant / SMD
Package Type & Size
Memory Depth
Memory Width, Bits
Options
Surface Mount Packages
F6 = .82" x .40" 32 Lead FP Unformed
F7 = .82" x .40" 32 Lead FP Formed
N = None
Memory Speed, ns
Thru-Hole Packages
P4 = 32 Pin DIP
* Screened to the individual test methods of MIL-STD-883
Specifications subject to change without notice.
Telephone: (516) 694-6700
FAX:
(516) 694-6715
Toll Free Inquiries: 1-(800) 843-1553
Aeroflex Circuit Technology
35 South Service Road
Plainview New York 11830
Aeroflex Circuit Technology
21
SCD1676 REV A 5/6/98 Plainview NY (516) 694-6700