ACT2102 ® Rev 2, 23-May-12 18V/2A Step-Down DC/DC Converter FEATURES • • • • • • • • • • • • • • • GENERAL DESCRIPTION 2A Output Current Wide 4.5V to 18V Operating Input Range Synchronous Buck Topology Integrated 130mΩ Power MOSFET Switches Output Adjustable from 0.923V to 12V ACT2102 is a monolithic synchronous buck regulator. The device integrates two 130mΩ MOSFETs, and provides 2A of continuous load current over a wide input voltage of 4.5V to 18V. Current mode control provides fast transient response and cycle-by-cycle current limit. Hiccup at short circuit reduces IC temperatures. Up to 96% Efficiency Stable with Low ESR Ceramic Output Capacitors Internal Soft Start 1.5mA Low Standby Input Current High Light Load Efficiency Cycle-by-Cycle Over Current Limit Input Under Voltage Lockout Hiccup Protection at Short Circuit and Over Current Frequency Fold Back Protection Low Power Dissipation at Over Current and Short Circuit An internal soft-start prevents inrush current at turnon, and in shutdown mode the supply current drops to 10μA. Pulse-skipping mode at light load reduces standby power down to 1.5mA. This device, available in an 8-pin SOP package, provides a very compact solution with minimal external components. APPLICATIONS • • • • LCD-TV Set-top Box Distributed Power Systems Networking Systems 95 Efficiency vs. Load Current ACT2102-001 100 VIN = 7V Efficiency (%) 90 85 VIN = 18V 80 75 VIN = 12V 70 65 60 VOUT = 5V 55 10 100 1000 10000 Load Current (mA) Innovative PowerTM -1- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 ORDERING INFORMATION PART NUMBER OPERATION TEMPERATURE RANGE ACT2102SH-T -40°C to 85°C PACKAGE PINS PACKING SOP-8 8 TAPE & REEL PIN CONFIGURATION PIN DESCRIPTIONS PIN NAME 1 HSB 2 IN Input Supply. Bypass this pin to GND with a low ESR capacitor. Drive IN with a 4.5V to 18V power source. See Input Capacitor in the Application Information section. 3 SW Switch Output. Connect this pin to the switching end of the external inductor. Note that a capacitor is required from SW to HSB to power the high-side switch. 4 GND Ground. 5 FB 6 COMP Compensation Node. COMP is used to compensate the regulation control loop. See Compensation Components. 7 EN Enable Input. When higher than 2.5V, this pin turns the IC on. When lower than 2.3V, this pin turns IC off. When left unconnected, EN is pulled up to logic HIGH with a 2µA pull-up current. EN is a digital input that turns the regulator on or off. 8 N/C Not connected. Innovative PowerTM DESCRIPTION High-Side Bias Input. This pin acts as the positive rail for the high-side switch's gate driver. Connect a 10nF or greater capacitor between HSB and SW pins. Feedback Input. FB senses the output voltage to regulate that voltage. Drive FB with a resistive voltage divider from the output voltage. The feedback threshold is 0.923V. See Setting the Output Voltage. -2- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 ABSOLUTE MAXIMUM RATINGSc PARAMETER VALUE UNIT IN to GND -0.3 to + 20 V SW to GND -1 to VIN + 1 V HSB to GND VSW - 0.3 to VSW + 6 V FB, EN, COMP to GND -0.3 to + 6 V Continuous SW Current Internally limited A Junction to Ambient Thermal Resistance 105 ˚C/W Maximum Power Dissipation 0.76 W Operating Junction Temperature -40 to 150 ˚C Storage Junction -55 to 150 ˚C 300 ˚C Lead Temperature (Soldering 10 sec.) c: Do not exceed these limits to prevent damage to the device. Exposure to Absolute Maximum Rating conditions for long periods may affect device reliability. Innovative PowerTM -3- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 ELECTRICAL CHARACTERISTICS (VIN = 12V, TA = 25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS Input Voltage MIN VEN = 0V Supply Current (No Switching) VEN = 3V, VFB = 1.2V Feedback Voltage VFB Error Amplifier Voltage Gain AEA Error Amplifier Transconductance GEA High-Side Switch On Resistance Low-Side Switch On Resistance UNIT 18 V 10 20 µA 0.75 1.1 mA 4.75V ≤ VIN ≤ 18V 0.909 0.923 0.937 V 400 V/V 800 µA/V RDS(ON)1 130 mΩ RDS(ON)2 130 mΩ 3.5 A 3.5 A/V ΔIC = ±10μA 50% Duty Cycle Upper Switch Current Limit COMP to Current Sense GCS Oscillation Frequency Fsw 280 Short Circuit Oscillation Frequency DMAX 2.4 EN Lockout Threshold Voltage 310 340 Input Voltage Rising 4 kHz 80 kHz 88 % 2.6 2.8 75 EN Lockout Hysteresis Input Under Voltage Lockout Threshold MAX 4.5 Shutdown Supply Current Maximum Duty Cycle TYP 4.2 V mV 4.4 V Internal Soft Startup Time 2 ms Hiccup Frequency at short circuit 26 Hz Under Voltage Threshold 0.74 V Thermal Shutdown 160 °C Thermal Shutdown Hysteresis Window 30 °C Innovative PowerTM -4- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 FUNCTIONAL BLOCK DIAGRAM FUNCTIONAL DESCRIPTION ACT2102 skips pulse automatically and thus achieve very high light load efficiency. With load increasing, ACT2102 goes into Discontinuous Current Mode (DCM) and then Continuous Current Mode (CCM). As seen in Function Block Diagram, the ACT2102 is peak current mode controlled synchronous Buck converter. The converter operates as follows: A switching cycle starts when the rising edge of the Oscillator clock output causes the High-Side Power Switch to turn on and the Low-Side Power Switch to turn off. With the SW side of the inductor now connected to IN, the inductor current ramps up to store energy in the magnetic field. The inductor current level is measured by the Current Sense Amplifier and added to the Oscillator ramp signal. If the resulting summation is higher than the COMP voltage, the output of the PWM Comparator goes high. When this happens or when Oscillator clock output goes low, the High-Side Power Switch turns off and the Low-Side Power Switch turns on. The High-Side Power Switch is driven by logic using HSB as the positive rail. This pin is charged to VSW + 5V when the Low-Side Power Switch turns on. The COMP voltage is the integration of the error between FB input and the internal 0.923V reference. If FB is lower than the reference voltage, COMP tends to go higher to increase current to the output to keep the output voltage regulated. The Oscillator normally switches at 310kHz. Soft Startup The ACT2102 builds in internal soft startup function. The internal FB reference voltage rises to steady state of 0.923V in 2ms to avoid inrush input current during startup. Under Voltage Protection (UVP) At output short circuit or over current, the FB voltage is usually pulled low. To protect the IC at over current and short circuit, the ACT2102 builds in Under Voltage Protection (UVP) function. When ACT2102 detects the FB voltage below 80% of the 0.923V reference, it pulls low COMP voltage and discharges internal soft-start capacitor and goes into hiccup mode. The IC restarts in 32ms after going into hiccup mode. If the short circuit or over current is clear, the IC restarts back to normal mode. The UVP is disabled for 6ms starting from startup. If the output is short at startup, the output voltage never rises to nominal voltage. During the 6ms period of time, the output current is limited by cycle-by-cycle current limit. With 32ms shutdown period, the average input and output current at short circuit is significantly reduced and the IC is more reliable. Pulse Skipping Mode To decrease the power recycling at very light load, the low-side FET current is sensed to emulate a diode. When the low-side FET current decreases to zero, the FET is turned off to avoid negative inductor current. At no load and very light load, Innovative PowerTM -5- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 Secondary Over Current Protection (SOCP) In normal operation, ACT2102 high-side FET current is protected by cycle-by-cycle current limit. In some fault conditions, the input current may run away. SOCP current limit is set 30% higher than cycle-by-cycle current limit, and once SOCP is triggered, ACT2102 goes into hiccup mode and reduce the power dissipation significantly. Enable Pin The ACT2102 has an enable input EN for turning the IC on or off. The EN pin contains a precision 2.5V comparator with 75mV hysteresis and a 1.3μA pull-up current source. The comparator can be used with a resistor divider from VIN to program a startup voltage higher than the normal UVLO value. If left floating, the EN pin will be pulled up to roughly 5V by the internal 1.3μA current source. It can be driven from standard logic signals greater than 2.5V, or driven with open-drain logic to provide digital on/off control. Thermal Shutdown The ACT2102 disables switching when its junction temperature exceeds 160°C and resumes when the temperature has dropped by 30°C. Innovative PowerTM -6- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 APPLICATIONS INFORMATION dependent on the inductance value: Output Voltage Setting Higher inductance reduces the peak-to-peak ripple current. The trade off for high inductance value is the increase in inductor core size and series resistance, and the reduction in current handling capability. In general, select an inductance value L based on ripple current requirement: Figure 1: Output Voltage Setting L= Figure 1 shows the connections for setting output voltage. Select the proper ratio of the feedback resistors RFB1 and RFB2 based on output voltage. Typically, use RFB2 ≈ 10kΩ determine RFB1 from the following equation: R FB 1 = R FB 2 ⎛ V OUT ⎜ ⎝ 0 . 923 V ⎞ − 1⎟ ⎠ VOUT × (VIN _VOUT ) VIN fSW ILOADMAX K RIPPLE (2) the two the and where VIN is the input voltage, VOUT is the output voltage, fSW is the switching frequency, ILOADMAX is the maximum load current, and KRIPPLE is the ripple factor. Typically, choose KRIPPLE = 20~40% to correspond to the peak-to-peak inductor ripple current being 20~40% of the maximum load current. (1) With a selected inductor value the peak-to-peak inductor current is estimated as: Table 1: ILPK _ PK = Recommended Resistance Values VOUT × (VIN _VOUT ) L × VIN × fSW (3) The peak inductor current is estimated as: VOUT R1 R2 5.0V 47kΩ 10.5kΩ 3.3V 27.4kΩ 10.5kΩ 2.5V 18kΩ 10.5kΩ 1.8V 10.2kΩ 10.5kΩ 1.2V 3.3kΩ 10.5kΩ 1.0V 1kΩ 10.5kΩ 1 ILPK = ILOADMAX + ILPK _ PK 2 (4) The selected inductor should not saturate at ILPK. The maximum output current is calculated as: IOUTMAX = ILIM _ 1 I _ 2 LPK PK (5) LLIM is the internal current limit, which is typically 3.5A, as shown in Electrical Characteristics Table. Inductor Selection The inductor maintains a continuous current to the output load. This inductor current has a ripple that is Table 2: Inductor Values Range and Typical Compensation VOUT VIN L 5.0V 7V ~ 18V 10µH ~ 33µH 3.3V 5V ~ 18V 8.2µH ~ 22µH 1.8V 4.5V ~ 18V 5.6µH ~ 15µH 1.2V 4.5V ~ 16V 4µH ~ 12µH 1.0V 4.5V ~ 13V 3.3µH ~ 10µH Innovative PowerTM COUT RCOMP CCOMP CCOMP2 330µF/10V 25kΩ 2.2nF 220PF 22µF/ Ceramic × 2 10kΩ 2.2nF N/A 330µF/10V 21kΩ 2.2nF 220PF 22µF/ Ceramic × 2 8.2kΩ 2.2nF N/A 470µF/10V 12kΩ 4.7nF 220PF 22µF/ Ceramic × 2 8.2kΩ 4.7nF N/A 470µF/10V 12kΩ 10nF 220PF 22µF/ Ceramic × 2 8.2kΩ 10nF N/A 470µF/10V 10kΩ 10nF 220PF 22µF/ Ceramic × 2 8.2kΩ 10nF N/A -7- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 APPLICATIONS INFORMATION CONT’D capacitor, fSW is the switching frequency, L is the inductor value, and COUT is the output capacitance. In the case of ceramic output capacitors, RESR is very small and does not contribute to the ripple. Therefore, a lower capacitance value can be used for ceramic type. In the case of tantalum or electrolytic capacitors, the ripple is dominated by RESR multiplied by the ripple current. In that case, the output capacitor is chosen to have sufficiently low ESR. External High Voltage Bias Diode It is recommended that an external High Voltage Bias diode be added when the system has a 5V fixed input or the power supply generates a 5V output. This helps improve the efficiency of the regulator. The High Voltage Bias diode can be a low cost one such as IN4148 or BAT54. Figure 2: External High Voltage Bias Diode For ceramic output capacitor, typically choose a capacitance of about 22µF. For tantalum or electrolytic capacitors, choose a capacitor with less than 50mΩ ESR. Optional Schottky Diode During the transition between high-side switch and low-side switch, the body diode of the low-side power MOSFET conducts the inductor current. The forward voltage of this body diode is high. An optional Schottky diode may be paralleled between the SW pin and GND pin to improve overall efficiency. This diode is also recommended for high duty cycle operation and high output voltage applications. Input Capacitor The input capacitor needs to be carefully selected to maintain sufficiently low ripple at the supply input of the converter. A low ESR capacitor is highly recommended. Since large current flows in and out of this capacitor during switching, its ESR also affects efficiency. The input capacitance needs to be higher than 10µF. The best choice is the ceramic type, however, low ESR tantalum or electrolytic types may also be used provided that the RMS ripple current rating is higher than 50% of the output current. The input capacitor should be placed close to the IN and GND pins of the IC, with the shortest traces possible. In the case of tantalum or electrolytic types, they can be further away if a small parallel 0.1µF ceramic capacitor is placed right next to the IC. Output Capacitor The output capacitor also needs to have low ESR to keep low output voltage ripple. The output ripple voltage is: VRIPPLE = IOUTMAX K RIPPLE RESR + VIN 28 × fSW LC OUT 2 (6) where IOUTMAX is the maximum output current, KRIPPLE is the ripple factor, RESR is the ESR of the output Innovative PowerTM -8- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 Figure 4 and Figure 5 give two typical car charger application schematics and associated BOM list. PC Board Layout Guidance When laying out the printed circuit board, the following checklist should be used to ensure proper operation of the IC. 1) Arrange the power components to reduce both the AC loop and DC loop size. AC loop includes input cap, VIN pin and VIN ground pin, DC loop includes SW pin, inductor, output capacitor and ground pin. 2) Place input decoupling ceramic capacitor CIN as close to IN pin as possible. CIN is connected power GND with vias or short and wide path. 3) Return FB, COMP and ISET to signal GND pin, and connect the signal GND to power GND at a single point for best noise immunity. 4) Use copper plane for power GND for best heat dissipation and noise immunity. 5) Place feedback resistor close to FB pin. 6) Use short trace connecting HSB-CHSB-SW loop Figure 3 shows an example of PCB layout. Figure 3: PCB Layout Innovative PowerTM -9- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 Figure 4: Typical Application Circuit for 1.8V/2A DC-DC Converter Table 3: BOM List for 1.8V/2A DC-DC Converter ITEM REFERENCE DESCRIPTION MANUFACTURER QTY 1 U1 IC, ACT2102SH, SOP-8 Active-Semi 1 2 C1 Capacitor, Ceramic, 10µF/25V, 1210, SMD Murata, TDK 1 3 C2 Capacitor, Ceramic, 6.8nF/6.3V, 0603, SMD Murata, TDK 1 4 C3 Capacitor, Ceramic, 10nF/25V, 0603, SMD Murata, TDK 1 5 C4,C5 Capacitor, Ceramic, 47µF/10V, 1206, SMD Murata, TDK 2 6 L1 Inductor,10µH, 3A, 20%, SMD Tyco Electronics 1 7 R1 Chip Resistor, 10kΩ, 0603, 1% Murata, TDK 1 8 R2 Chip Resistor, 10.5kΩ, 0603, 1% Murata, TDK 1 9 R3 Chip Resistor, 6.8kΩ, 0603, 5% Murata, TDK 1 Innovative PowerTM - 10 - www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 Figure 5: Typical Application Circuit for 5V/2A DC-DC Converter Table 4: BOM List for 5V/2A DC-DC Converter ITEM REFERENCE 1 U1 2 MANUFACTURER QTY IC, ACT2102SH, SOP-8 Active-Semi 1 C1 Capacitor, Ceramic, 10µF/50V, 1210, SMD Murata, TDK 1 3 C2 Capacitor, Ceramic, 6.8nF/6.3V, 0603, SMD Murata, TDK 1 4 C3 Capacitor, Ceramic, 10nF/50V, 0603, SMD Murata, TDK 1 5 C4,C5 Capacitor, Ceramic, 22µF/10V, 1206, SMD Murata, TDK 2 6 L1 Inductor, 22µH, 3A, 20% Sumida 1 7 D1 Diode, 75V/150mA, LL4148 Good-ARK 1 8 R1 Chip Resistor, 47kΩ, 0603, 1% Murata, TDK 1 9 R2 Chip Resistor, 10.5kΩ, 0603, 1% Murata, TDK 1 10 R3 Chip Resistor, 8.2kΩ, 0603, 5% Murata, TDK 1 Innovative PowerTM DESCRIPTION - 11 - www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 TYPICAL PERFORMANCE CHARACTERISTICS (L = 22µH, CIN = 100µF, COUT = 330µF, Ta = 25°C, RCOMP = 15k, CCOMP1 = 2.2nF, CCOMP2 = N/C) Efficiency vs. Load Current Efficiency (%) 85 VIN = 18V 375 350 Frequency (kHz) VIN = 7V 90 80 75 VIN = 12V 70 65 60 100 300 275 250 200 10000 1000 325 225 VOUT = 5V 55 10 ACT2102-003 95 Frequency vs. VIN 400 ACT2102-002 100 6 8 10 Load Current (mA) 18 20 FB Voltage vs. Load Current 0.94 FB Voltage (V) 250 ACT2102-005 0.95 ACT2102-004 300 Frequency (kHz) 16 VIN Voltage (V) Frequency vs. FB Voltage 350 14 12 200 150 100 0.93 0.92 0.91 50 0.9 0 0 400 200 600 800 0 1000 1200 2000 1600 Load Current (mA) FB Voltage (V) FB Voltage vs. IC Temperature Shutdown Current vs. VIN 0.929 21 18 Current (µA) 0.926 ACT2102-007 24 ACT2102-006 0.932 FB Voltage (V) 800 400 0.923 0.92 0.917 15 12 9 6 0.914 3 0.911 0 20 40 60 80 100 120 140 160 2 Temperature (°C) Innovative PowerTM 4 6 8 10 12 14 16 18 20 22 VIN Voltage (V) - 12 - www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (L = 22µH, CIN = 100µF, COUT = 330µF, Ta = 25°C, RCOMP = 15k, CCOMP1 = 2.2nF, CCOMP2 = N/C) IIN vs. VIN at Output Dead Short Standby Current vs. VIN 120 100 2 IIN (mA) Standby Current (mA) 2.5 ACT2102-009 140 ACT2102-008 3 1.5 1 80 60 40 0.5 20 0 3 5 7 9 11 13 15 17 19 4 21 6 8 10 VIN Voltage (V) 16 18 20 ACT2102-011 ACT2102-010 3.4 Peak Current (A) 14 No Load Operation Peak Current Limit vs. Duty Cycle 3.6 12 VIN (V) VIN = 12V V0UT = 5V CH1 3.2 3.0 CH2 2.8 2.6 CH3 2.4 20 30 40 50 60 70 80 90 CH1: VRIPPLE, 10mV/div CH2: SW, 5V/div CH3: IL, 200mA/div TIME: 10µs/div Duty Cycle 10mA Load Operation CH1 ACT2102-013 CH1 ACT2102-012 VIN = 12V V0UT = 5V 100mA Load Operation VIN = 12V V0UT = 5V CH2 CH2 CH3 CH3 CH1: VRIPPLE, 20mV/div CH2: SW, 5V/div CH3: IL, 1A/div TIME: 2µs/div CH1: VRIPPLE, 20mV/div CH2: SW, 5V/div CH3: IL, 1A/div TIME: 2µs/div Innovative PowerTM - 13 - www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (L = 22µH, CIN = 100µF, COUT = 330µF, Ta = 25°C, RCOMP = 15k, CCOMP1 = 2.2nF, CCOMP2 = N/C) 2A Load Operation VIN = 12V V0UT = 5V ACT2102-015 ACT2102-014 CH1 Load Transient (0A~1A) CH1 CH2 CH2 CH3 VIN = 12V V0UT = 5V CH1: VOUT, 50mV/div CH2: ILOAD, 500mA/div TIME: 4ms//div CH1: VRIPPLE, 50mV/div CH2: SW, 5V/div CH3: IL, 1A/div TIME: 2µs/div Start Up with VIN (Load 0A) Load Transient (1A~2A) ACT2102-017 ACT2102-016 CH1 VIN = 12V V0UT = 5V CH1 CH2 CH2 CH3 CH4 VIN = 12V V0UT = 5V CH1: VIN, 10V/div CH2: VOUT, 5V/div CH3: SW, 10V/div CH4: IL, 2A/div TIME: 2ms/div CH1: VOUT, 50mV/div CH2: ILOAD, 500mA/div TIME: 4ms//div Start Up with EN (Load 0A) Start Up with VIN (Load 2A) VIN = 12V V0UT = 5V CH1 CH2 CH2 CH3 CH3 CH4 CH4 CH1: VIN, 10V/div CH2: VOUT, 5V/div CH3: SW, 10V/div CH4: IL, 2A/div TIME: 2ms/div Innovative PowerTM ACT2102-019 CH1 ACT2102-018 VIN = 12V V0UT = 5V CH1: EN, 5V/div CH2: VOUT, 5V/div CH3: SW, 10V/div CH4: IL, 2A/div TIME: 2ms/div - 14 - www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (L = 22µH, CIN = 100µF, COUT = 330µF, Ta = 25°C, RCOMP = 15k, CCOMP1 = 2.2nF, CCOMP2 = N/C) Start Up with EN (Load 2A) Short Circuit ACT2102-020 CH1 ACT2102-021 VIN = 12V V0UT = 5V VIN = 12V V0UT = 5V CH1 CH2 CH2 CH3 CH3 CH4 CH4 CH1: EN, 5V/div CH2: VOUT, 5V/div CH3: SW, 10V/div CH4: IL, 2A/div TIME: 2ms/div CH1: IOUT, 10A/div CH2: VOUT, 5V/div CH3: SW, 10V/div CH4: IL, 5A/div TIME: 20ms/div Short Circuit Recovery VIN = 12V V0UT = 5V CH1 ACT2102-023 CH1 Start Up with Output Dead Short ACT2102-022 VIN = 12V V0UT = 5V CH2 CH2 CH3 CH3 CH4 CH4 CH1: IOUT, 5A/div CH2: VOUT, 5V/div CH3: SW, 10V/div CH4: IL, 5A/div TIME: 20ms/div Innovative PowerTM CH1: EN, 5V/div CH2: IOUT, 5A/div CH3: SW, 10V/div CH4: IL, 5A/div TIME: 20ms/div - 15 - www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT2102 ® Rev 2, 23-May-12 PACKAGE OUTLINE SOP-8 PACKAGE OUTLINE AND DIMENSIONS D C E1 E L SYMBOL ? θ DIMENSION IN INCHES MIN MAX MIN MAX A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 B 0.330 0.510 0.013 0.020 C 0.190 0.250 0.007 0.010 D 4.700 5.100 0.185 0.201 E 3.800 4.000 0.150 0.157 E1 5.800 6.300 0.228 0.248 A A2 B A1 e DIMENSION IN MILLIMETERS e 1.270 TYP 0.050 TYP L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° Active-Semi, Inc. reserves the right to modify the circuitry or specifications without notice. Users should evaluate each product to make sure that it is suitable for their applications. Active-Semi products are not intended or authorized for use as critical components in life-support devices or systems. Active-Semi, Inc. does not assume any liability arising out of the use of any product or circuit described in this datasheet, nor does it convey any patent license. Active-Semi and its logo are trademarks of Active-Semi, Inc. For more information on this and other products, contact [email protected] or visit http://www.active-semi.com. ® is a registered trademark of Active-Semi. Innovative PowerTM - 16 - www.active-semi.com Copyright © 2012 Active-Semi, Inc.