ACTIVE-SEMI ACT4050

ACT4050
Active-Semi
Rev 2, 01-Jul-11
Wide Input 3.5A Step Down Converter
FEATURES
•
•
•
•
•
•
•
•
•
•
3.5A Output Current
Up to 96% Efficiency
4.5V to 15V Input Range
12µA Shutdown Supply Current
400kHz Switching Frequency
Adjustable Output Voltage From 0.817V
Cycle-by-Cycle Current Limit Protection
Thermal Shutdown Protection
Frequency Fold-Back at Short Circuit
Stability with Wide Range of Capacitors,
Including Low ESR Ceramic Capacitors
• SOP-8/EP (Exposed Pad) Package
APPLICATIONS
•
•
•
•
•
•
Digital TV
GENERAL DESCRIPTION
The ACT4050 is a current-mode step-down DC/DC
converter that provides up to 3.5A of output current
at 400kHz switching frequency. The device utilizes
Active-Semi’s proprietary high voltage process for
operation with input voltages up to 15V.
The ACT4050 provides fast transient response and
eases loop stabilization while providing excellent
line and load regulation. This device features a very
low ON-resistance power MOSFET which provides
peak operating efficiency up to 96%. In shutdown
mode, the ACT4050 consumes only 12μA of supply
current.
This device also integrates protection features
including cycle-by-cycle current limit, thermal
shutdown and frequency fold-back at short circuit.
The ACT4050 is available in a SOP-8/EP (Exposed
Pad) package and requires very few external
devices for operation.
Portable DVDs
Car-Powered or Battery-Powered Equipments
Set-Top Boxes
Telecom Power Supplies
Consumer Electronics
TYPICAL APPLICATION CIRCUIT
Efficiency vs. Load Current
ACT4050-001
100
VIN = 7V
90
Efficiency (%)
VIN = 12V
80
70
60
VOUT = 5V
50
0
500
1000
1500
2000
2500
3000
3500
Load Current (mA)
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Copyright © 2011 Active-Semi, Inc.
ACT4050
Active-Semi
Rev 2, 01-Jul-11
ORDERING INFORMATION
PART NUMBER
TEMPERATURE RANGE
PACKAGE
PINS
PACKING
ACT4050YH
-40°C to 85°C
SOP-8/EP
8
TUBE
ACT4050YH-T
-40°C to 85°C
SOP-8/EP
8
TAPE & REEL
PIN CONFIGURATION
SOP-8/EP
PIN DESCRIPTIONS
PIN
NAME
DESCRIPTION
1
BS
Bootstrap. This pin acts as the positive rail for the high-side switch’s gate driver. Connect
a 10nF capacitor between BS and SW.
2
IN
Input Supply. Bypass this pin to GND with a low ESR capacitor. See Input Capacitor in
the Application Information section.
3
SW
4
GND
5
FB
Feedback Input. The voltage at this pin is regulated to 0.817V. Connect to the resistor
divider between output and ground to set output voltage.
6
COMP
Compensation Pin. See Stability Compensation in the Application Information section.
7
EN
Enable Input. When higher than 1.3V, this pin turns the IC on. When lower than 0.9V, this
pin turns the IC off. Output voltage is discharged when the IC is off. When left
unconnected, EN is pulled up to 4.5V typical with a 2µA pull-up current.
8
N/C
Not Connected.
EP
Exposed Pad shown as dashed box. The exposed thermal pad should be connected to
board ground plane and pin 4. The ground plane should include a large exposed copper
pad under the package for thermal dissipation (see package outline). The leads and
exposed pad should be flush with the board, without offset from the board surface.
EP
Innovative PowerTM
Switch Output. Connect this pin to the switching end of the inductor.
Ground.
-2-
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Copyright © 2011 Active-Semi, Inc.
ACT4050
Active-Semi
Rev 2, 01-Jul-11
ABSOLUTE MAXIMUM RATINGSc
PARAMETER
VALUE
UNIT
-0.3 to 15
V
SW Voltage
-1 to VIN + 1
V
BS Voltage
VSW - 0.3 to VSW + 8
V
-0.3 to 6
V
Internally Limited
A
Junction to Ambient Thermal Resistance (θJA)
46
°C/W
Maximum Power Dissipation
1.8
W
Operating Junction Temperature
-40 to 150
°C
Storage Temperature
-55 to 150
°C
300
°C
IN Supply Voltage
EN, FB Voltage
Continuous SW Current
Lead Temperature (Soldering, 10 sec)
c: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS
(VIN = 12V, TA = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Input Voltage
VIN
VOUT = 3V, ILOAD = 0V to 1A
4.5
Feedback Voltage
VFB
5V ≤ VIN ≤ 15V
0.8
TYP
0.817
MAX
UNIT
15
V
0.834
V
High-Side Switch On Resistance
RONH
0.15
Ω
Low-Side Switch On Resistance
RONL
4.5
Ω
SW Leakage
High-Side Switch Peak Current
Limit
COMP to Current Limit
Transconductance
VEN = 0
ILIM
GEA
Error Amplifier DC Gain
AVEA
Minimum On Time
ΔICOMP = ±10µA
fSW
Short Circuit Switching Frequency
Maximum Duty Cycle
Duty Cycle = 50%
GCOMP
Error Amplifier Transconductance
Switching Frequency
0
DMAX
350
10
µA
5.4
A
2.5
A/V
650
µA/V
4000
V/V
400
450
kHz
VFB = 0
60
kHz
VFB = 0.7V
95
%
400
ns
Ton_Min
Minimum Duty Cycle
VFB = 0.9V
Enable Threshold Voltage
Hysteresis = 0.1V
Enable Pull-Up Current
Pin pulled up to 4.5V typically
when left unconnected
2
Supply Current in Shutdown
VEN = 0
12
20
µA
IC Supply Current in Operation
VEN = 3V, VFB = 0.9V
0.5
1
mA
Thermal Shutdown Temperature
Hysteresis = 10°C
160
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-3-
0.8
1.1
0
%
1.4
V
µA
°C
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Copyright © 2011 Active-Semi, Inc.
ACT4050
Active-Semi
Rev 2, 01-Jul-11
FUNCTIONAL BLOCK DIAGRAM
FUNCTIONAL DESCRIPTION
As seen in Functional Block Diagram, the ACT4050
is a current mode pulse width modulation (PWM)
converter. The converter operates as follows:
A switching cycle starts when the rising edge of the
Oscillator clock output causes the High-Side Power
Switch to turn on and the Low-Side Power Switch to
turn off. With the SW side of the inductor now
connected to IN, the inductor current ramps up to
store energy in the magnetic field. The inductor
current level is measured by the Current Sense
Amplifier and added to the Oscillator ramp signal. If
the resulting summation is higher than the COMP
voltage, the output of the PWM Comparator goes
high. When this happens or when Oscillator clock
output goes low, the High-Side Power Switch turns
off and the Low-Side Power Switch turns on. At this
point, the SW side of the inductor swings to a diode
voltage below ground, causing the inductor current
to decrease and magnetic energy to be transferred
to output. This state continues until the cycle starts
again.
The High-Side Power Switch is driven by logic using
BS as the positive rail. This pin is charged to VSW + 6V
when the Low-Side Power Switch turns on.
The COMP voltage is the integration of the error
between FB input and the internal 0.817V
reference. If FB is lower than the reference voltage,
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COMP tends to go higher to increase current to the
output. Current limit happens when COMP reaches
its maximum clamp value of 2.15V.
The Oscillator normally switches at 400kHz.
However, if FB voltage is less than 0.7V, then the
switching frequency decreases until it reaches a
typical value of 60kHz at VFB = 0.5V.
Shutdown Control
The ACT4050 EN pin contains a precision 1.1V
comparator with 100mV hysteresis, as well as a
2µA pull-up current source. This combination can
be used to control the on/off operation of
ACT4050 using several methods:
1) First, "always-on" operation can be enabled
simply by floating the EN pin. Any time power is
applied to VIN, the EN pull-up current source will
bring the pin above 1.1V and enable the IC. In
this case, under-voltage lockout will be controlled
by an internal 4.2V comparator on VIN.
2) Second, an open-drain or open-collector logic
device can be used to pull the EN pin low to
provide digital ON/OFF control. When the logic
pull-down is disabled, the internal 2µA pull-up
current will bring the EN pin high and enable the
chip.
3) Third, a known startup delay time can be created
by adding a small capacitor from EN to GND in
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Copyright © 2011 Active-Semi, Inc.
ACT4050
Active-Semi
Rev 2, 01-Jul-11
addition to the open-drain or open-collector logic
device. When the logic pull-down is disabled, the
voltage at EN will ramp up at a rate determined by
the 2µA EN pull-up current and the capacitor.
Once the voltage at EN exceeds the 1.1V
threshold, the device will be enabled. For the
case of using multiple ACT4050, time-based
output sequencing can be generated by placing
different capacitors at each ACT4050 EN pin.
The start up time delay can be calculated as a
simple function of the EN capacitor using the
equation:
T (ms) = 0.55 × CEN (nF)
Table 1:
Enable Delay Time vs. EN Capacitor Value
CAPACITOR VALUE
DELAY TIME (ms)
2.2nF
1.2
3.3nF
1.9
10nF
5.5
4) Fourth, by using the 1.1V precision comparator in
the EN circuitry, "power-OK" type output
sequencing can be generated. By connecting the
EN pin of one ACT4050 to the output of another
device, the ACT4050 will only start up once the
second device's output has exceeded the 1.1V
level. A resistor divider can be used to adjust the
ACT4050 startup to any point on the second
device's output range.
5) Finally, the EN comparator can be used for "Line
UVLO" to prevent the ACT4050 from starting up
before the input voltage is high enough to
support the output. By using a resistor divider
from VIN to GND (center tap = 1.1V EN
threshold), the device can be enabled and
disabled based on the voltage at VIN. Since the
internal UVLO voltage is 4.2V, Line UVLO is
recommended for outputs above this 4.2V level
to ensure clean startup. For the example of a 5V
output, it is desirable to prevent IC startup until
VIN has exceeded the 5V level. To start the IC at
6V input, we place a 10kΩ/47kΩ resistor divider
from VIN to EN to GND, which enables the IC at
VIN greater than 6.3V and disables the IC when
VIN decreases below 5.2V.
Thermal Shutdown
The ACT4050 automatically turns off when its junction
temperature exceeds 160°C and automatically turns
on again when the junction temperature falls below
140°C .
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Copyright © 2011 Active-Semi, Inc.
ACT4050
Active-Semi
Rev 2, 01-Jul-11
APPLICATIONS INFORMATION
LLIM is the internal current limit, as shown in
Electrical Characteristics Table.
Output Voltage Setting
Input Capacitor
Figure 1:
The input capacitor needs to be carefully selected to
maintain sufficiently low ripple at the supply input of
the converter. A low ESR capacitor is highly
recommended. Since large current flows in and out
of this capacitor during switching, its ESR also
affects efficiency.
Output Voltage Setting
VOUT
ACT4050
RFB1
FB
RFB2
Note: To achieve best performance with 12V input application,
we recommend to use output voltage greater than 1.4V.
The input capacitance needs to be higher than
10µF. The best choice is the ceramic type,
however, low ESR tantalum or electrolytic types
may also be used provided that the RMS ripple
current rating is higher than 50% of the output
current. The input capacitor should be placed close
to the IN and G pins of the IC, with the shortest
traces possible. In the case of tantalum or
electrolytic types, they can be further away if a small
parallel 0.1µF ceramic capacitor is placed right next
to the IC.
Inductor Selection
Output Capacitor
The inductor maintains a continuous current to the
output load. This inductor current has a ripple that is
dependent on the inductance value: higher
inductance reduces the peak-to-peak ripple current.
The trade off for high inductance value is the
increase in inductor core size and series resistance,
and the reduction in current handling capability. In
general, select an inductance value L based on
ripple current requirement:
The output capacitor also needs to have low ESR to
keep low output voltage ripple. The output ripple
voltage is:
Figure 1 shows the connections for setting
output voltage. Select the proper ratio of the
feedback resistors RFB1 and RFB2 based on
output voltage. Typically, use RFB2 ≈ 10kΩ
determine RFB1 from the following equation:
⎞
⎛ VOUT
R FB 1 = R FB 2 ⎜
− 1⎟
0
.
817
V
⎠
⎝
L=
VOUT × (VIN − VOUT )
VIN fSW IOUTMAX K RIPPLE
the
two
the
and
(1)
(2)
where VIN is the input voltage, VOUT is the output
voltage, fSW is the switching frequency, IOUTMAX is the
maximum output current, and KRIPPLE is the ripple
factor. Typically, choose KRIPPLE = 30% to
correspond to the peak-to-peak ripple current being
30% of the maximum output current.
With a selected inductor value the peak-to-peak
inductor current is estimated as:
I LPK
- PK
=
V OUT × (V IN - V OUT
L × V IN × fSW
)
(3)
1
I
2 LPK - PK
(4)
The selected inductor should not saturate at ILPK.
The maximum output current is calculated as:
I OUTMAX
= I LIM -
Innovative PowerTM
1
I
2 LPK
- PK
VIN
2
28 × f SW LC OUT
(6)
where IOUTMAX is the maximum output current, KRIPPLE
is the ripple factor, RESR is the ESR of the output
capacitor, fSW is the switching frequency, L is the
inductor value, and COUT is the output capacitance. In
the case of ceramic output capacitors, RESR is very
small and does not contribute to the ripple.
Therefore, a lower capacitance value can be used for
ceramic type. In the case of tantalum or electrolytic
capacitors, the ripple is dominated by RESR multiplied
by the ripple current. In that case, the output
capacitor is chosen to have sufficiently low ESR.
For ceramic output capacitor, typically choose a
capacitance of about 22µF. For tantalum or
electrolytic capacitors, choose a capacitor with less
than 50mΩ ESR.
Rectifier Diode
The peak inductor current is estimated as:
I LPK = I LOADMAX +
VRIPPLE = IOUTMAX K RIPPLE RESR +
Use a Schottky diode as the rectifier to conduct
current when the High-Side Power Switch is off. The
Schottky diode must have current rating higher than
the maximum output current and a reverse voltage
rating higher than the maximum input voltage.
(5)
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ACT4050
Active-Semi
Rev 2, 01-Jul-11
STEP 2. Set the zero fZ1 at 1/4 of the cross over
frequency. If RCOMP is less than 15kΩ, the equation
for CCOMP is:
STABILITY COMPENSATION
Figure 2:
Stability Compensation
1.6 × 10 −5
RCOMP
CCOMP =
COMP
ACT4050
CCOMP
CCOMP2c
CCOMP = 1.2 ×10 −5 VOUT COUT
c: CCOMP2 is needed only for high ESR output capacitor
The feedback loop of the IC is stabilized by the
components at the COMP pin, as shown in Figure 2.
The DC loop gain of the system is determined by
the following equation:
0 . 82 V
AVEA G COMP
I OUT
1
2 π R COMP C COMP
And the proper value for CCOMP2 is:
Table 3 shows some calculated results based on
the compensation method above.
Table 2:
Typical Compensation for Different Output
Voltages and Output Capacitors
(11)
2πR COMP C COMP2
The following steps should be used to compensate
the IC:
STEP 1. Set the cross over frequency at 1/10 of the
switching frequency via RCOMP:
R COMP
2 π VOUT C OUT fSW
=
10 G EA GCOMP × 0 .82 V
= 1 . 88 × 10 8 V OUT C OUT
(16)
(9)
(10)
1
COUT RESRCOUT
RCOMP
Though CCOMP2 is unnecessary when the output
capacitor has sufficiently low ESR, a small value
CCOMP2 such as 100pF may improve stability against
PCB layout parasitic effects.
And finally, the third pole is due to RCOMP and
CCOMP2 (if CCOMP2 is used):
fP 3 =
⎞
⎟⎟ (Ω) (15)
⎠
(8)
The first zero Z1 is due to RCOMP and CCOMP:
fZ1 =
⎛ 1 .1 × 10 −6
R ESRCOUT ≥ Min ⎜⎜
,0 .012 × VOUT
⎝ COUT
CCOMP 2 =
The second pole P2 is the output pole:
I OUT
2 π V OUT C OUT
(14)
(F)
STEP 3. If the output capacitor’s ESR is high
enough to cause a zero at lower than 4 times the
cross over frequency, an additional compensation
capacitor CCOMP2 is required. The condition for using
CCOMP2 is:
(7)
The dominant pole P1 is due to CCOMP:
G EA
fP1 =
2 π AVEA C COMP
fP 2 =
(13)
If RCOMP is limited to 15kΩ, then the actual cross
over frequency is 3.4 / (VOUTCOUT). Therefore:
RCOMP
AVDC =
(F)
VOUT
COUT
RCOMP
CCOMP
CCOMP2c
2.5V
2x22μF Ceramic
8.2kΩ
2.2nF
None
3.3V
2x22μF Ceramic
12kΩ
1.5nF
None
5V
2x22μF Ceramic
15kΩ
1.5nF
None
2.5V
47μF SP CAP
15kΩ
1.5nF
None
3.3V
47μF SP CAP
15kΩ
1.8nF
None
5V
47μF SP CAP
15kΩ
2.7nF
None
2.5V
470μF/6.3V/30mΩ
15kΩ
15nF
1nF
3.3V
470μF/6.3V/30mΩ
15kΩ
22nF
1nF
5V
470μF/6.3V/30mΩ
15kΩ
27nF
None
c: CCOMP2 is needed for high ESR output capacitor.
(Ω)
(12)
Figure 3 shows an example ACT4050 application circuit
generating a 2.5V/3.5A output.
but limit RCOMP to 15kΩ maximum.
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ACT4050
Active-Semi
Rev 2, 01-Jul-11
Figure 3:
ACT4050 1.8V/3.5A Output Applicationc
c: D1 is a 30V, 5A Schottky diode with low forward voltage, a B530C equivalent. C4 can be either a ceramic capacitor (Panasonic
ECJ-3YB1C226M) or SP-CAP (Specialty Polymer) Aluminum Electrolytic Capacitor such as Panasonic EEFCD0J470XR. The SP-Cap
is based on aluminum electrolytic capacitor technology, but uses a solid polymer electrolyte and has very stable capacitance
characteristics in both operating temperature and frequency compared to ceramic, polymer, and low ESR tantalum capacitors.
Table 3:
ACT4050EV Bill of Materials (Apply for 1.8V Output Application)
ITEM
DESCRIPTION
MANUFACTURER
QTY
REFERENCE
1
IC, ACT4050
Active-Semi
1
U1
2
Resistor, 12.1kΩ , 1%, SMT, 0603
FengHua, Neohm, Yageo
1
R1
3
Resistor, 10kΩ, 1%, SMT, 0603
FengHua, Neohm, Yageo
1
R2
4
Resistor, 10kΩ, 5%, SMT, 0603
FengHua, Neohm, Yageo
1
R3
5
Capacitor, Ceramic, 10µF/35V, X7R, SMT,
1206
Panasonic, Kemet, Murata,
TDK, FengHua, Taiyo Yuden
1
C1
6
Capacitor, Ceramic, 22µF/6.3V, X7R, SMT, Panasonic, Kemet, Murata,
1206
TDK, FengHua, Taiyo Yuden
2
C4
7
Capacitor, Ceramic, 10nF/50V, X7R, SMT,
0603
Panasonic, Kemet, Murata,
TDK, FengHua, Taiyo Yuden
1
C3
8
Capacitor, Ceramic, 2.7nF/6.3V, X7R, SMT, Panasonic, Kemet, Murata,
0603
TDK, FengHua, Taiyo Yuden
1
C2
9
Capacitor, Ceramic, 220pF/6.3V, X7R,
SMT, 0603
Panasonic, Kemet, Murata,
TDK, FengHua, Taiyo Yuden
1
C5 (OPTIONAL)
10
Schottky Diode SK53/30V, 5A, SMC
Diodes
1
D1
11
Inductor, CDRH8D43-6R8NC, 6.8µH
Sumida
1
L1
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ACT4050
Active-Semi
Rev 2, 01-Jul-11
Figure 4:
ACT4050 3.3V/3.5A Output Applicationc
c: D1 is a 30V, 5A Schottky diode with low forward voltage, a B530C equivalent. C4 can be either a ceramic capacitor (Panasonic
ECJ-3YB1C226M) or SP-CAP (Specialty Polymer) Aluminum Electrolytic Capacitor such as Panasonic EEFCD0J470XR. The SP-Cap
is based on aluminum electrolytic capacitor technology, but uses a solid polymer electrolyte and has very stable capacitance
characteristics in both operating temperature and frequency compared to ceramic, polymer, and low ESR tantalum capacitors.
Table 4:
ACT4050EV Bill of Materials (Apply for 3.3V Output Application)
ITEM
DESCRIPTION
MANUFACTURER
QTY
REFERENCE
1
IC, ACT4050
Active-Semi
1
U1
2
Resistor, 30.5kΩ , 1%, SMT, 0603
FengHua, Neohm, Yageo
1
R1
3
Resistor, 10kΩ, 1%, SMT, 0603
FengHua, Neohm, Yageo
1
R2
4
Resistor, 12kΩ, 5%, SMT, 0603
FengHua, Neohm, Yageo
1
R3
5
Capacitor, Ceramic, 10µF/35V, X7R, SMT, 1206
Panasonic, Kemet, Murata,
TDK, FengHua, Taiyo Yuden
1
C1
6
Capacitor, Ceramic, 22µF/6.3V, X7R, SMT, 1206
Panasonic, Kemet, Murata,
TDK, FengHua, Taiyo Yuden
2
C4
7
Capacitor, Ceramic, 10nF/50V, X7R, SMT, 0603
Panasonic, Kemet, Murata,
TDK, FengHua, Taiyo Yuden
1
C3
8
Capacitor, Ceramic, 1.5nF/6.3V, X7R, SMT, 0603
Panasonic, Kemet, Murata,
TDK, FengHua, Taiyo Yuden
1
C2
9
Capacitor, Ceramic, 220pF/6.3V, X7R, SMT, 0603
Panasonic, Kemet, Murata,
TDK, FengHua, Taiyo Yuden
1
C5 (OPTIONAL)
10
Schottky Diode SK53/30V, 5A, SMC
Diodes
1
D1
11
Inductor, CDRH8D43-100NC, 10µH
Sumida
1
L1
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ACT4050
Active-Semi
Rev 2, 01-Jul-11
Figure 5:
ACT4050 5V/3A Output Applicationc
c: D1 is a 30V, 5A Schottky diode with low forward voltage, a B530C equivalent. C4 can be either a ceramic capacitor (Panasonic
ECJ-3YB1C226M) or SP-CAP (Specialty Polymer) Aluminum Electrolytic Capacitor such as Panasonic EEFCD0J470XR. The SP-Cap
is based on aluminum electrolytic capacitor technology, but uses a solid polymer electrolyte and has very stable capacitance
characteristics in both operating temperature and frequency compared to ceramic, polymer, and low ESR tantalum capacitors.
Table 5:
ACT4050EV Bill of Materials (Apply for 5V Output Application)
ITEM
DESCRIPTION
MANUFACTURER
QTY
REFERENCE
1
IC, ACT4050
Active-Semi
1
U1
2
Resistor, 51kΩ , 1%, SMT, 0603
FengHua, Neohm, Yageo
1
R1
3
Resistor, 10kΩ, 1%, SMT, 0603
FengHua, Neohm, Yageo
1
R2
4
Resistor, 15kΩ, 5%, SMT, 0603
FengHua, Neohm, Yageo
1
R3
5
Capacitor, Ceramic, 10µF/35V, X7R, SMT, 1206
Panasonic, Kemet, Murata,
TDK, FengHua, Taiyo Yuden
1
C1
6
Capacitor, Ceramic, 22µF/6.3V, X7R, SMT, 1206
Panasonic, Kemet, Murata,
TDK, FengHua, Taiyo Yuden
2
C4
7
Capacitor, Ceramic, 10nF/50V, X7R, SMT, 0603
Panasonic, Kemet, Murata,
TDK, FengHua, Taiyo Yuden
1
C3
8
Capacitor, Ceramic, 1.5nF/6.3V, X7R, SMT, 0603
Panasonic, Kemet, Murata,
TDK, FengHua, Taiyo Yuden
1
C2
9
Capacitor, Ceramic, 220pF/6.3V, X7R, SMT,
0603
Panasonic, Kemet, Murata,
TDK, FengHua, Taiyo Yuden
1
C5 (OPTIONAL)
10
Schottky Diode SK53/30V, 5A, SMC
Diodes
1
D1
11
Inductor, CDRH8D43-100NC, 10µH
Sumida
1
L1
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ACT4050
Active-Semi
Rev 2, 01-Jul-11
TYPICAL PERFORMANCE CHARACTERISTICS
(Circuit of Figure 5, unless otherwise specified.)
Efficiency vs. Load Current
Efficiency vs. Load Current
VIN = 5V
VIN = 12V
VIN = 7V
80
VIN = 7V
90
Efficiency (%)
Efficiency (%)
90
ACT4050-002
100
ACT4050-001
100
VIN = 12V
70
60
80
70
60
VOUT = 3.3V
0
500
1000
1500
2000
2500
3000
0
3500
500
1000
2000
2500
3000
Load Current (mA)
Shutdown Current vs. Input Voltage
Inductor Peak Current Limit vs. Duty
Cycle
Inductor Peak Current Limit (mA)
20
15
10
5
6
4
8
10
12
5500
5000
4500
4000
3500
3000
2500
2000
0
14
20
40
Input Voltage (V)
Feedback Voltage vs. Temperature
Feedback Voltage (V)
0.84
400
370
340
310
280
250
-40
0.83
0.82
0.81
0.80
0.79
0.78
0.77
0.76
0.75
0
40
80
-40
130
0
40
80
130
Temperature (°C)
Temperature (°C)
Innovative PowerTM
100
ACT4050-006
430
80
0.85
ACT4050-005
460
60
Duty Cycle (% )
Switching Frequency vs. Temperature
490
3500
ACT4050-004
ACT4050-003
6000
0
Switching Frequency (MHz)
1500
Load Current (mA)
25
Shutdown Current (µA)
VOUT = 5V
50
50
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Copyright © 2011 Active-Semi, Inc.
ACT4050
Active-Semi
Rev 2, 01-Jul-11
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(Circuit of Figure 5, unless otherwise specified.)
Start-up/Shutdown by VIN Pin
Start-up/Shutdown by VIN Pin
ACT4050-008
ACT4050-007
CH1
CH1
CH2
CH2
VIN = 12V
VOUT = 5V
No Load
VIN = 12V
VOUT = 5V
1Ω Load
VIN = 12V
VOUT = 5V
ILOAD = 1A
CH1: VIN, 5.0V/div
CH2: VOUT, 2V/div
TIME: 100µs/div
CH1: VIN, 5.0V/div
CH2: VOUT, 2V/div
TIME: 100µs/div
Start-up/Shutdown by EN Pin
Start-up/Shutdown by EN Pin
ACT4050-010
ACT4050-009
CH1
CH1
CH2
CH2
VIN = 12V
VOUT = 5V
2Ω Load
VIN = 12V
VOUT = 5V
No Load
CH1: VEN, 2.0V/div
CH2: VOUT, 2.0V/div
TIME: 400µs/div
CH1: VEN, 2.0V/div
CH2: VOUT, 2.0V/div
TIME: 200µs/div
Switching Waveform
Switching Waveform
CH1
VIN = 12V
VOUT = 5V
ILOAD = 1A
ACT4050-012
ACT4050-011
CH1
CH2
CH2
VIN = 12V
VOUT = 3.3V
ILOAD = 1A
CH1: VOUT, 20mV/div (AC COUPLED)
CH2: VSW, 5.0V/div
TIME: 1µs/div
CH1: VOUT, 20mV/div (AC COUPLED)
CH2: VSW, 5.0V/div
TIME: 1µs/div
Innovative PowerTM
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Copyright © 2011 Active-Semi, Inc.
ACT4050
Active-Semi
Rev 2, 01-Jul-11
PACKAGE OUTLINE
SOP-8/EP PACKAGE OUTLINE AND DIMENSIONS
E
DIMENSION IN
MILLIMETERS
DIMENSION IN
INCHES
MIN
MAX
MIN
MAX
A
1.350
1.700
0.053
0.067
A1
0.000
0.100
0.000
0.004
A2
1.350
1.550
0.053
0.061
b
0.330
0.510
0.013
0.020
c
0.170
0.250
0.007
0.010
D
4.700
5.100
0.185
0.200
D1
3.202
3.402
0.126
0.134
E
3.800
4.000
0.150
0.157
E1
5.800
6.200
0.228
0.244
E2
2.313
2.513
0.091
0.099
b
e
D
D1
SYMBOL
E2
A1
E1
L
θ?
A2
A
c
e
1.270 TYP
0.050 TYP
L
0.400
1.270
0.016
0.050
θ
0°
8°
0°
8°
Active-Semi, Inc. reserves the right to modify the circuitry or specifications without notice. Users should evaluate each
product to make sure that it is suitable for their applications. Active-Semi products are not intended or authorized for use
as critical components in life-support devices or systems. Active-Semi, Inc. does not assume any liability arising out of
the use of any product or circuit described in this datasheet, nor does it convey any patent license.
Active-Semi and its logo are trademarks of Active-Semi, Inc. For more information on this and other products, contact
[email protected] or visit http://www.active-semi.com.
®
is a registered trademark of Active-Semi.
Innovative PowerTM
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Copyright © 2011 Active-Semi, Inc.