AD AD8212WYRMZ-R71 High voltage current shunt monitor Datasheet

High Voltage
Current Shunt Monitor
AD8212
FEATURES
Adjustable gain
High common-mode voltage range
7 V to 65 V typical
7 V to >500 V with external pass transistor
Current output
Integrated 5 V series regulator
8-lead MSOP package
Operating temperature range of −40°C to +125°C
FUNCTIONAL BLOCK DIAGRAM
VSENSE
V+
1
8
AD8212
APPLICATIONS
OUTPUT
CURRENT
COMPENSATION
BIAS
CIRCUIT
5
2
3
6
IOUT
COM
BIAS
ALPHA
05942-001
Current shunt measurement
Motor controls
DC-to-DC converters
Power supplies
Battery monitoring
Remote sensing
Figure 1.
GENERAL DESCRIPTION
The AD8212 is a high common-mode voltage, current shunt
monitor. It accurately amplifies a small differential input voltage
in the presence of large common-mode voltages up to 65 V
(>500 V with an external PNP transistor).
The AD8212 is ideal for current monitoring across a shunt
resistor in applications controlling loads, such as motors and
solenoids. The current output of the device is proportional to
the input differential voltage. The user can select an external
resistor to set the desired gain. The typical common-mode
voltage range of the AD8212 is 7 V to 65 V.
Another feature of the AD8212 is high voltage operation,
which is achieved by using an external high voltage breakdown
PNP transistor. In this configuration, the common-mode range
of the AD8212 is equal to the breakdown of the external PNP
transistor. Therefore, operation at several hundred volts is easily
achieved (see Figure 23).
The AD8212 features a patented output base current compensation circuit for high voltage operation mode. This ensures that
no base current is lost through the external transistor and
excellent output accuracy is maintained regardless of commonmode voltage or temperature.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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Tel: 781.329.4700
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Fax: 781.461.3113 ©2007–2009 Analog Devices, Inc. All rights reserved.
AD8212
TABLE OF CONTENTS
Features .............................................................................................. 1
Normal Operation (7 V to 65 V Supply (V+) Range) ..............9
Applications ....................................................................................... 1
High Voltage Operation Using an External PNP Transistor 10
Functional Block Diagram .............................................................. 1
Output Current Compensation Circuit................................... 10
General Description ......................................................................... 1
Applications Information .............................................................. 11
Revision History ............................................................................... 2
General High-Side Current Sensing ........................................ 11
Specifications..................................................................................... 3
Motor Control............................................................................. 11
Absolute Maximum Ratings............................................................ 4
500 V Current Monitor ............................................................. 11
ESD Caution .................................................................................. 4
Bidirectional Current Sensing .................................................. 12
Pin Configuration and Function Descriptions ............................. 5
Outline Dimensions ....................................................................... 13
Typical Performance Characteristics ............................................. 6
Ordering Guide .......................................................................... 13
Theory of Operation ........................................................................ 9
REVISION HISTORY
5/09—Rev. A to Rev. B
Changes to Ordering Guide .......................................................... 13
11/07—Rev. 0 to Rev. A
Increased Operating Temperature Range........................ Universal
5/07—Revision 0: Initial Version
Rev. B | Page 2 of 16
AD8212
SPECIFICATIONS
VS = 15 V, TOPR = −40°C to +125°C, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
SUPPLY VOLTAGE (V+)
SUPPLY CURRENT 2
VOLTAGE OFFSET
Offset Voltage (RTI)
Over Temperature (RTI)
Offset Drift
INPUT
Input Impedance
Differential
Common Mode (VCM)
Voltage Range
Differential
VSENSE (Pin 8) Current 3
OUTPUT
Transconductance
Current Range (IOUT)
Gain Error for TOPR
Impedance
Voltage Range
REGULATOR
Nominal Value
PSRR
Bias Current (IBIAS)
DYNAMIC RESPONSE
Small Signal −3 dB Bandwidth
Settling Time
ALPHA PIN INPUT CURRENT
NOISE
0.1 Hz to 10 Hz, RTI
Spectral Density, 1 kHz, RTI
TEMPERATURE RANGE
For Specified Performance (TOPR)
Conditions/Comments
No external pass transistor
With external PNP transistor 1
(ISUPPLY = IOUT + IBIAS)
V+ = 7 V to 65 V
High voltage operation, using external PNP
Min
7
7
Typ
220
200
TA
TOPR
TOPR
V+ = 7 V to 65 V
2
5
Maximum voltage between V+ and VSENSE
V+ = 7 V to 65 V, TOPR
100
Max
65
>500
Unit
V
V
720
1500
μA
μA
±2
±3
±10
mV
mV
μV/°C
kΩ
MΩ
500
200
1000
7 V ≤ V+ ≤ 65 V, 0 mV to 500 mV differential input
7 V ≤ V+ ≤ 65 V, with respect to 500 μA full scale
500
±1
20
0
7 V ≤ V+ ≤ 65 V
7 V ≤ V+ ≤ 65 V
TOPR, 7 V ≤ V+ ≤ 65 V
TOPR, high voltage operation
4.80
80
V+ − 5
5.20
185
200
1000
V
dB
μA
μA
25
kHz
kHz
kHz
μs
μA
1000
500
100
2
1.1
40
−40
1
μA/V
μA
%
MΩ
V
5
200
Gain = 10
Gain = 20
Gain = 50
Within 0.1% of the true output, gain = 20
mV
nA
μV p-p
nV/√Hz
+125
°C
Range dependent on the VCE breakdown of the transistor.
The AD8212 supply current in normal voltage operation (V+ = 7 V to 65 V) is the bias current (IBIAS) added to output current (IOUT). Output current varies upon input
differential voltage and can range from 0 μA to 500 μA. IBIAS in this mode of operation is typically 185 μA and 200 μA maximum. For high voltage operation mode, refer
to the High Voltage Operation Using an External PNP Transistor section.
3
The current of the amplifier into VSENSE (Pin 8) increases when operating in high voltage mode. See the High Voltage Operation Using an External PNP Transistor section
for more information.
2
Rev. B | Page 3 of 16
AD8212
ABSOLUTE MAXIMUM RATINGS
ESD CAUTION
TOPR = −40°C to +125°C, unless otherwise noted.
Table 2.
Parameter
Supply Voltage
Continuous Input Voltage
Reverse Supply Voltage
Operating Temperature Range
Storage Temperature Range
Output Short-Circuit Duration
Rating
65 V
68 V
0.3 V
−40°C to +125°C
−40°C to +150°C
Indefinite
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. B | Page 4 of 16
AD8212
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
AD8212
8
VSENSE
7
NC
BIAS 3
NC = NO CONNECT
3
Table 3. Pin Function Descriptions
Mnemonic
V+
COM
BIAS
NC
IOUT
ALPHA
NC
VSENSE
X Coordinate
−393
−392
−392
–
+386
+386
+386
+386
5
Figure 3. Metallization Diagram
Figure 2. Pin Configuration
Pin No.
1
2
3
4
5
6
7
8
8
6
05942-002
6 ALPHA
TOP VIEW
NC 4 (Not to Scale) 5 IOUT
1
2
05942-025
V+ 1
COM 2
Y Coordinate
+219
+67
−145
–
−82
+23
+118
+210
Description
Supply Voltage (Inverting Amplifier Input).
Regulator Low Side.
Bias Circuit Low Side.
No Connect.
Output Current.
Current Compensation Circuit Input.
No Connect.
Noninverting Amplifier Input.
Rev. B | Page 5 of 16
AD8212
TYPICAL PERFORMANCE CHARACTERISTICS
195
1200
1000
T = +125°C
185
180
T = +25°C
INPUT VOS (µV)
T = –40°C
175
800
600
400
170
200
160
05942-005
165
5
10
15
20
25
30
35
40
45
50
55
60
05942-008
QUIESCENT CURRENT (µA)
190
0
–40
65
–20
0
20
SUPPLY VOLTAGE (V)
Figure 4. Supply Current vs. Supply (Pin V+) (IOUT = 0 mA)
100
120
5.1
T = –40°C
T = +25°C
5.0
4.9
05942-006
T = +125°C
5
10
15
20
25
30
35
40
45
50
55
60
+125°C
0.8
0.7
0.6
+25°C
0.5
0.4
–40°C
0.3
0.2
05942-009
OFFSET VOLTAGE RTI (mV)
REGULATOR VOLTAGE (V)
80
1.0
0.9
0.1
0
65
7
12
17
22
SUPPLY VOLTAGE (V)
45
9
40
G = +50
30
G = +20
25
20
G = +10
10
5
42
47
52
57
62
8
7
6
5
4
3
2
1
10k
100k
FREQUENCY (Hz)
1M
10M
0
05942-021
0
1k
37
05942-010
OUTPUT CURRENT DRIFT (nA/°C)
10
15
32
Figure 8 .Input Offset Voltage vs. Supply (Pin V+)
50
35
27
VOLTAGE SUPPLY (V)
Figure 5. Regulator Voltage vs. Supply (Pin V+)
GAIN (dB)
60
Figure 7. Input Offset Voltage vs. Temperature
5.2
4.8
40
TEMPERATURE (°C)
0
50
100
150
200
250
300
350
400
450
DIFFERENTIAL INPUT VOLTAGE (mV)
Figure 6. Gain vs. Frequency
Figure 9. Output Current Drift vs. Differential Input Voltage
Rev. B | Page 6 of 16
500
AD8212
100
VIN
20mV/DIV
V+ = 15V
ROUT = 50kΩ
1
G = +10
VOUT
500mV/DIV
G = +20
0V
0.1
05942-014
0
10
20
30
40
50
60
70
80
90
100
500
DIFFERENTIAL INPUT VOLTAGE (mV)
5µs/DIV
05942-023
0.01
G = +50
Figure 10. Total Output Error Due to Input Offset vs. Differential
Input Voltage
Figure 13. Step Response (Gain = 50)
VIN
20mV/DIV
VIN
100mV/DIV
V+ = 15V
ROUT = 5kΩ
V+ = 15V
ROUT = 5kΩ
VOUT
50mV/DIV
VOUT
200mV/DIV
05942-012
05942-015
0V
5µs/DIV
5µs/DIV
Figure 11. Step Response (Gain = 5)
Figure 14. Step Response (Gain = 5)
VIN
20mV/DIV
VIN
100mV/DIV
V+ = 15V
ROUT = 20kΩ
V+ = 15V
ROUT = 20kΩ
VOUT
1V/DIV
VOUT
200mV/DIV
0V
05942-016
0V
05942-013
OUTPUT ERROR (%)
10
5µs/DIV
5µs/DIV
Figure 15. Step Response (Gain = 20)
Figure 12. Step Response (Gain = 20)
Rev. B | Page 7 of 16
AD8212
5.2
V+ = 15V
ROUT = 50kΩ
VOUT
2V/DIV
05942-017
0V
5.1
T = –40°C
T = +25°C
5.0
T = +125°C
4.9
4.8
100
5µs/DIV
200
300
400
500
600
700
800
900 1000 1100 1200
BIAS CURRENT (µA)
05942-024
REGULATOR VOLTAGE (V)
VIN
100mV/DIV
Figure 19. Regulator Voltage High Voltage Mode (IOUT = 0 mA) vs.
Bias Current
Figure 16. Step Response (Gain = 50)
5.2
REGULATOR VOLTAGE (V)
VIN
100mV/DIV
V+ = 15V
ROUT = 20kΩ
VOUT
2V/DIV
5.1
V+ = 300V
V+ = 100V
5.0
V+ = 200V
4.9
4.8
–40
2µs/DIV
05942-007
05942-018
0V
–25
–10
5
20
35
50
65
80
95
110 125
TEMPERATURE (°C)
Figure 20. Regulator Voltage vs. Temperature
(High Voltage Operation)
Figure 17. Step Response Falling
550
500
VIN
100mV/DIV
V+ OPERATING RANGE (V)
450
V+ = 15V
ROUT = 20kΩ
VOUT
2V/DIV
350
300
250
200
150
V+ MAXIMUM RANGE
V+ MINIMUM RANGE
100
05942-019
50
0
10
2µs/DIV
20
30
50
70 100 150 200 250 300 350 400 450 500
RBIAS (kΩ)
Figure 18. Step Response Rising
Figure 21. Supply Range (V+) vs. Bias Resistor Value
(High Voltage Operation)
Rev. B | Page 8 of 16
05942-020
0V
400
AD8212
THEORY OF OPERATION
BATTERY
RSHUNT
1
NORMAL OPERATION
(7 V TO 65 V SUPPLY (V+) RANGE)
ILOAD
8
AD8212
R1
LOAD
In typical applications, the AD8212 measures a small
differential input voltage generated by a load current
flowing through a shunt resistor.
R2
A1
The operational amplifier (A1) is connected across the shunt
resistor (RSHUNT) with its inverting input connected to the
battery/supply side, and the noninverting input connected
to the load side of the system. Amplifier A1 is powered via
an internal series regulator (depicted as a Zener diode in
Figure 22). This regulator maintains a constant 5 V between
the battery/supply terminal of the AD8212 and COM (Pin 2),
which represents the lowest common point of the internal
circuitry.
Q1
BIAS
CIRCUIT
5
A load current flowing through the external shunt resistor
produces a voltage at the input terminals of the AD8212.
Amplifier A1 responds by causing Transistor Q1 to conduct the
necessary current through Resistor R1 to equalize the potential
at both the inverting and noninverting inputs of Amplifier A1.
The current through the emitter of Transistor Q1 (IOUT) is
proportional to the input voltage (VSENSE), and, therefore, the
load current (ILOAD) through the shunt resistor (RSHUNT). The
output current (IOUT) is converted to a voltage by using an
external resistor, the value of which is dependent on the input
to output gain equation desired in the application.
The transfer function for the AD8212 is
IOUT = (gm × VSENSE)
OUTPUT
CURRENT
COMPENSATION
VOUT
2
3
6
IOUT
05942-003
ROUT
Figure 22. Typical Connection (7 V to 65 V Supply (Pin V+) Range)
When using the AD8212 as described, the battery/supply
voltage in the system must be between 7 V to 65 V. The 7 V
minimum supply range is necessary to turn on the internal
regulator (shown as a Zener diode in Figure 22). This regulated
voltage then remains a constant 5 V, regardless of the supply
(V+) voltage. The 65 V maximum limit in this mode of
operation is due to the breakdown voltage limitation of the
AD8212 process.
Typically, a 1% resistor can be used to convert the output
current to a voltage. Table 4 provides suggested ROUT values.
VSENSE = ILOAD × RSHUNT
VOUT = IOUT × ROUT
Table 4. Suggested ROUT Values
VOUT = (VSENSE × ROUT)/1000
where:
gm = 1000 µA/V.
In normal voltage operation mode, the bias circuit is connected
to GND, as shown in Figure 22. In this mode, IBIAS is typically
185 μA throughout the 7 V to 65 V (V+) range.
Gain (V/V)
1
10
20
50
100
Rev. B | Page 9 of 16
ROUT (kΩ)
1
10
20
49.9
100
AD8212
HIGH VOLTAGE OPERATION USING AN EXTERNAL
PNP TRANSISTOR
The AD8212 offers features that simplify measuring current in
the presence of common-mode voltages greater than 65 V. This
is achieved by connecting an external PNP transistor at the
output of the AD8212, as shown in Figure 23. The VCE breakdown voltage of this PNP becomes the operating common-mode
range of the AD8212. PNP transistors with breakdown voltages
exceeding 300 V are inexpensive and readily available in small
packages.
BATTERY
RSHUNT
1
8
AD8212
R2
LOAD
R1
In this mode of operation, the supply current (IBIAS) of the
AD8212 circuit increases based on the supply range and the
RBIAS resistor chosen. For example
if
V+ = 500 V and RBIAS = 500 kΩ
IBIAS = (V+ − 5 V)/RBIAS
then,
IBIAS = (500 – 5)/500 kΩ = 990 μA
In high voltage operation, it is recommended that IBIAS remain
within 200 μA to 1 mA. This ensures that the bias circuit is
turned on, allowing the device to function as expected. At the
same time, the current through the bias circuit/regulator is
limited to 1 mA. Refer to Figure 19 and Figure 21 for IBIAS and
V+ information when using the AD8212 in a high voltage
configuration.
A1
When operating the AD8212, as depicted in Figure 23,
Transistor Q2 can be a FET or a bipolar PNP transistor. The
latter is much less expensive, however the magnitude of IOUT
conducted to the output resistor (ROUT) is reduced by the
amount of current lost through the base of the PNP. This leads
to an error in the output voltage reading.
Q1
OUTPUT
CURRENT
COMPENSATION
BIAS
CIRCUIT
5
2
3
The AD8212 includes an integrated patented circuit, which
compensates for the output current that is lost through the base
of the external PNP transistor. This ensures that the correct
transconductance of the amplifier is maintained. The user can
opt for an inexpensive bipolar PNP, instead of a FET, while
maintaining a comparable level of accuracy.
6
Q2
VOUT
RBIAS
OUTPUT CURRENT COMPENSATION CIRCUIT
05942-004
ROUT
Figure 23. High Voltage Operation Using External PNP
The AD8212 features an integrated 5 V series regulator. This
regulator ensures that at all times COM (Pin 2), which is the
most negative of all the terminals, is always 5 V less than the
supply voltage (V+). Assuming a battery voltage (V+) of 100 V,
it follows that the voltage at COM (Pin 2) is
(V+) – 5 V = 95 V
The base emitter junction of Transistor Q2, in addition to the
Vbe of one internal transistor, makes the collector of Transistor Q1
approximately equal to
95 V + 2(Vbe(Q2)) = 95 V + 1.2 V = 96.2 V
This voltage appears across external Transistor Q2. The voltage
across Transistor Q1 is
100 V – 96.2 V = 3.8 V
In this manner, Transistor Q2 withstands 95.6 V and the
internal Transistor Q1 is only subjected to voltages well below
its breakdown capability.
The base of the external PNP, Q2, is connected to ALPHA
(Pin 6) of the AD8212. The current flowing in this path is
mirrored inside the current compensation circuit. This
current then flows in Resistor R2, which is the same value
as Resistor R1. The voltage created by this current across
Resistor R2, displaces the noninverting input of Amplifier A1
by the corresponding voltage. Amplifier A1 responds by driving
the base of Transistor Q1 so as to force a similar voltage
displacement across Resistor R1, thereby increasing IOUT.
Because the current generated by the output compensation
circuit is equal to the base current of Transistor Q2, and the
resulting displacements across Resistor R1 and Resistor R2 result
in equal currents, the increment of current added to the output
current is equivalent to the base current of Transistor Q2.
Therefore, the integrated output current compensation circuit
has corrected IOUT such that no error results from the base
current lost at Transistor Q2.
This feature of the AD8212 greatly improves IOUT accuracy and
allows the user to choose an inexpensive bipolar PNP (with low
beta) with which to monitor current in the presence of high
voltages (typically several hundred volts).
Rev. B | Page 10 of 16
AD8212
APPLICATIONS INFORMATION
GENERAL HIGH-SIDE CURRENT SENSING
500 V CURRENT MONITOR
The AD8212 output is intended to drive high impedance nodes.
Therefore, if interfacing with a converter, it is recommended
that the output voltage across ROUT be buffered, so that the gain
of the AD8212 is not affected.
As noted in the High Voltage Operation Using an External PNP
Transistor section, the AD8212 common-mode voltage range is
extended by using an external PNP transistor. This mode of
operation is achievable with many amplifiers featuring a current
output. However, typically an external Zener regulator must be
added, along with a FET device, to withstand the common-mode
voltage and maintain output current accuracy.
ILOAD
BATTERY
RSHUNT
V+
2
COM
VSENSE
8
NC
7
3
BIAS ALPHA
6
4
NC
5
IOUT
ADC
AD8661
IOUT
ROUT
05942-026
1
The AD8212 features an integrated regulator (which acts as a
Zener regulator). It offers output current compensation that
allows the user to maintain excellent output current accuracy
by using any PNP transistor. Reliability is increased due to
lower component count. Most importantly, the output current
accuracy is high, allowing the user to choose an inexpensive
PNP transistor to withstand the increased common-mode
voltage.
LOAD
AD8212
ILOAD
NOTES
1. NC = NO CONNECT.
500V
RSHUNT
MOTOR CONTROL
The AD8212 is a practical solution for high-side current sensing
in motor control applications. In cases where the shunt resistor
is referenced to battery and the current flowing is unidirectional,
as shown in Figure 25, the AD8212 monitors the current with
no additional supply pin necessary.
BATTERY
AD8212
IMOTOR
1
V+
2
COM
VSENSE
8
NC
3
BIAS ALPHA
7
6
4
NC
5
IOUT
MOTOR
VOUT
NOTES
1. NC = NO CONNECT.
05942-028
ROUT
Figure 25. High-Side Current Sensing for Motor Control
Rev. B | Page 11 of 16
AD8212
1
V+
2
COM
VSENSE 8
3
BIAS ALPHA 6
4
NC
NC 7
IOUT 5
VOUT
ROUT
500kΩ
NOTES
1. TRANSISTOR VCE BREAKDOWN
VOLTAGE MUST BE 500V.
2. NC = NO CONNECT.
05942-027
Careful calculations must be made when choosing a gain
resistor so as not to exceed the input voltage range of the
converter. The output of the AD8212 can be as high as
(V+) − 5 V. However, the true output maximum voltage is
dependent upon the differential input voltage, and the resulting
output current across ROUT, which can be as high as 500 μA
(based on a 500 mV maximum input differential limit).
LOAD
Figure 24. Normal Voltage Range Operation
Figure 26. High Voltage Operation Using External PNP
AD8212
BIDIRECTIONAL CURRENT SENSING
VOUT1 increases as ILOAD flows through the shunt resistor. VOUT2
increases when ICHARGE flows through the input shunt resistor.
The AD8212 is a unidirectional current sensing device.
Therefore, in power management applications where both the
charge and load currents must be monitored, two devices can
be used and connected as shown in Figure 27. In this case,
ILOAD
ICHARGE
V+
VSENSE
8
8
VSENSE
AD8212
V+
OUTPUT
CURRENT
COMPENSATION
OUTPUT
CURRENT
COMPENSATION
BIAS
CIRCUIT
IOUT
5
BIAS
CIRCUIT
COM
2
1
AD8212
LOAD
1
CHARGE
BATTERY
RSHUNT
BIAS
3
ALPHA
6
ALPHA
BIAS
6
IOUT
COM
3
2
5
VOUT1
VOUT2
ROUT1
05942-011
ROUT2
Figure 27. Bidirectional Current Sensing
Rev. B | Page 12 of 16
AD8212
OUTLINE DIMENSIONS
3.20
3.00
2.80
8
3.20
3.00
2.80
5
1
5.15
4.90
4.65
4
PIN 1
0.65 BSC
0.95
0.85
0.75
1.10 MAX
0.15
0.00
0.38
0.22
0.23
0.08
COPLANARITY
0.10
8°
0°
0.80
0.60
0.40
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MO-187-AA
Figure 28. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions shown in millimeters
ORDERING GUIDE
Model
AD8212YRMZ 1
AD8212YRMZ-RL1
AD8212YRMZ-R71
AD8212WYRMZ1
AD8212WYRMZ-RL1
AD8212WYRMZ-R71
1
Temperature Range
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
Package Description
8-Lead MSOP
8-Lead MSOP, 13” Tape and Reel
8-Lead MSOP, 7” Tape and Reel
8-Lead MSOP
8-Lead MSOP, 13” Tape and Reel
8-Lead MSOP, 7” Tape and Reel
Z = RoHS Compliant Part.
Rev. B | Page 13 of 16
Package Option
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
Branding
Y04
Y04
Y04
Y25
Y25
Y25
AD8212
NOTES
Rev. B | Page 14 of 16
AD8212
NOTES
Rev. B | Page 15 of 16
AD8212
NOTES
©2007–2009 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D05942-0-5/09(B)
Rev. B | Page 16 of 16
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