DEC ADB2508P 25 amp silicon bridge rectifier Datasheet

DIOTEC ELECTRONICS CORP.
Data Sheet No. BRDB-2500P-1C
ADBD-2500P-1C
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
25 AMP SILICON BRIDGE RECTIFIERS
MECHANICAL SPECIFICATION
FEATURES
SERIES: DB2500P - DB2510P and ADB2504P - ADB2508P
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
Heat Sink
Heat Sink
BH
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
Molded
Body
INTEGRALLY MOLDED HEAT SINK PROVIDES VERY
LOW THERMAL RESISTANCE FOR MAXIMUM HEAT
DISSIPATION
BH
LT
HOLE FOR
#8 SCREW
D1
Molded
Body
LL
HOLE FOR
#8 SCREW
LD
UL RECOGNIZED - FILE #E124962
AC
+
D1
AC
AC
D3 BL
AC
+
_
AC
BL D1
_
_
MECHANICAL DATA
AC
+
RoHS COMPLIANT
D2
Case: Case: Molded epoxy with integral heat sink
Epoxy carries a U/L Flammability rating of 94V-0
D1
BL
BL
SYM
Terminals: Round silver plated copper pins or fast-on terminals
MILLIMETERS
28.4
MAX
28.7
MIN
BL
Soldering: Per MIL-STD 202 Method 208 guaranteed
D2
INCHES
MIN
SYM
MILLIMETERS
28.4
MAX
28.7
MIN
1.12
MAX
1.13
BL
INCHES
MIN
1.12
MAX
1.13
0.40
BH
9.6
10.2
0.38
0.40
BH
9.6
10.2
0.38
Polarity: Marked on side of case
D1
15.7
16.7
0.62
0.66
17.5
18.5
0.69
0.73
Mounting Position: Any. Through hole for #8 screw.
Max. mounting torque = 20 in-lb.
D2
D3
17.5
13.5
n/a
18.5
14.5
0.69
0.53
n/a
0.73
0.57
0.6
D1
D2
LL
10.9
20.6
11.9
n/a
0.47
n/a
LD
1.0
1.1
0.43
0.81
0.039
LT
Weight: Fast-on Terminals - 0.7 Ounces (20.0 Grams)
Wire Leads - 0.55 Ounces (16.0 Grams)
15.2
Suffix "T" indicates FAST-ON TERMINALS
0.042
Suffix "W" indicates WIRE LEADS
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
RATINGS
PARAMETER (TEST CONDITIONS)
SYMBOL
CONTROLLED
AVALANCHE
UNITS
NON-CONTROLLED
AVALANCHE
ADB ADB ADB DB
DB
DB
DB
DB
DB
DB
2504P 2506P 2508P 2500P 2501P 2502P 2504P 2506P 2508P 2510P
Series Number
Maximum DC Blocking Voltage
VRM
Working Peak Reverse Voltage
VRWM
Maximum Peak Recurrent Reverse Voltage
VRRM
RMS Reverse Voltage
VR (RMS)
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method). TJ = 125O C
400
600
800
50
100
200
400
600
800 1000
280
420
560
35
70
140
280
420
560
IFSM
500
IO
25
Junction Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +150
Mimimum Avalanche Voltage
V(BR) Min
See Note 1
Maximum Avalanche Voltage
V(BR) Max
See Note 1
o
Average Forward Rectified Current @ TC = 75 C
VOLTS
700
AMPS
°C
n/a
n/a
VOLTS
VFM
1.05
IRM
1
50
mA
Minimum Insulation Breakdown Voltage (Circuit to Case)
VISO
2500
VOLTS
Typical Thermal Resistance, Junction to Case
RqJC
1.2
Maximum Forward Voltage (Per Diode) at 12.5 Amps DC
o
Maximum Reverse Current at Rated VRM
@ TA = 25 C
o
@TA = 125 C
NOTES: (1) These bridges exhibit the avalanche characteristic at breakdown. If your application requires a specific breakdown voltage range, please contact us.
o
C/W
3.01 25dbp
E41
DIOTEC ELECTRONICS CORP.
Data Sheet No. BRDB-2500P-2C
ABDB-2500P-2C
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
25 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB2500P - DB2510P and SERIES ADB2504P - ADB2508P
1000
25
60Hz Resistive or
Inductive Loads
20
15
Bridge Mounted on 5 x 6 x 4.9" Thick
(12.7 x 15.2 x 12.4cm) Finned Al. Plate
10
5
Peak Forward Surge Current
(Amperes)
Average Forward Current, Io
(Amperes)
30
o
TJ = 125 C
50
0
0
50
75
100
125
1
10
100
150
Number of Cycles at 60 Hz
o
Case Temperature, C
FIGURE 1. FORWARD CURRENT DERATING CURVE
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
1000
10
O
100
Instantaneous Reverse Current, I
(Microamperes)
Instantaneous Forward Current
(Amperes)
TJ = 125 C
10
o
TJ = 25 C
Pulse Width = 300mSec
1%Duty Cycle
1.0
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
E42
1.0
O
TJ = 25 C
0.1
.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
3.01 25db
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