AH115 The Communications Edge TM Product Information ½ Watt, High Linearity InGaP HBT Amplifier Product Features Product Description x 1800 – 2300 MHz x +28.5 dBm P1dB x +44 dBm Output IP3 x 14 dB Gain @ 1960 MHz x +5V Single Positive Supply x MTTF > 100 Years x Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg. Applications x Final stage amplifiers for Repeaters x Mobile Infrastructure The AH115 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrow-band tuned application circuits with up to +44 dBm OIP3 and +28.5 dBm of compressed 1-dB power. All devices are 100% RF and DC tested. The AH115 is available in leadfree/green/RoHS-compliant SOIC-8 package. The product is targeted for use as driver amplifiers for wireless infrastructure where high linearity and medium power is required. The internal active bias allows the AH115 to maintain high linearity over temperature and operate directly off a +5 V supply. This combination makes the device an excellent fit for transceiver line cards and power amplifiers in current and next generation multi-carrier 3G base stations. Specifications (1) Parameters Functional Diagram 1 8 2 7 3 6 4 5 Function Vref Input Output Vbias GND N/C or GND Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5 Typical Performance (4) Units Min Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power MHz MHz dB dB dB dBm dBm 1800 Max Parameters 2300 2140 14.4 23 8 +28.5 +42 Frequency Gain S11 S22 Output P1dB Output IP3 (2) IS-95A Channel Power MHz dB dB dB dBm dBm 1960 14.3 -12 -8 +28.3 +44 dBm +22.5 dBm +22.5 wCDMA Channel Power wCDMA Channel Power dBm dBm +20 Noise Figure Operating Current Range (3) Device Voltage dB mA V 5.3 250 +5 @ -45 dBc ACPR, 1960 MHz @ -45 dBc ACLR, 2140 MHz 12.5 +26.5 +41 Typ 200 Units @ -45 dBc ACPR, @ -45 dBc ACLR Noise Figure Supply Bias 300 dB Typical 2140 14.4 -23 -8 +28.5 +42 +20 5 5.3 +5 V @ 250 mA 4. Typical parameters reflect performance in a tuned application circuit at +25 C. 1. Test conditions unless otherwise noted. 25 ºC, Vsupply = +5 V in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions. It is expected that the current can increase up to 300mA at P1dB. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature Rating -40 to +85 qC -65 to +150 qC +22 dBm +8 V 400 mA 2W +250 qC Ordering Information Part No. Description ½ Watt, High Linearity InGaP HBT Amplifier AH115-S8G AH115-S8PCB1960 AH115-S8PCB2140 (lead-free/green/RoHS-compliant SOIC-8 Pkg) 1960 MHz Evaluation Board 2140 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 1 of 5 April 2006 AH115 The Communications Edge TM Product Information ½ Watt, High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C T = 25 C, calibrated to device leads) S22 0.8 2. 0 2. 0 0 3. 0 3. 0 4. 0 4. 25 0 5. 0.2 20 5. 0 0. 2 10 .0 10 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 15 0.2 10.0 -10.0 -1 0.0 -0 .8 -1.0 -0 .6 Swp Min 0.05GHz .0 -2 .4 -0 .0 -2 .4 -0 2.5 -1.0 2 -0.8 1 1.5 Frequency (GHz) -0 .6 0.5 -3 .0 0 -4 .0 -5. 0 0 2 -0 . -3 .0 2 -0. 5 -4 .0 -5 . 0 G ain (dB) 6 0. 1.0 0. 8 6 0. DB(|S[2,1]|) 0. 4 DB(GMax) 30 Sw p Max 5.05GHz 0. 4 35 Swp Max 5.05GHz 1.0 S11 Gain and Maximum Stable Gain Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The return loss plots are shown from 50 – 5050 MHz, with markers placed at 0.5 – 5.05 GHz in 0.5 GHz increments. Sw p Min 0.05GHz S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -2.11 -1.59 -1.51 -1.45 -1.58 -1.78 -1.96 -2.46 -3.30 -4.70 -8.15 -19.01 -9.59 -4.09 -1.99 -1.12 -0.72 -172.90 -178.94 173.71 163.84 153.68 144.31 134.21 123.44 111.21 92.57 78.58 93.29 177.56 159.30 141.65 127.57 116.11 25.10 21.15 17.75 15.23 13.69 12.77 11.94 11.36 11.17 11.39 11.64 11.51 10.35 7.87 4.95 1.97 -0.88 133.84 126.67 124.19 111.50 98.94 84.57 69.70 55.57 40.93 22.80 1.64 -25.24 -55.97 -83.78 -105.90 -122.86 -136.93 -36.03 -35.22 -34.29 -34.45 -33.58 -32.84 -32.77 -31.79 -31.12 -30.30 -29.47 -29.31 -30.51 -32.59 -33.96 -34.68 -35.64 31.44 15.04 7.30 -2.16 -2.99 -12.80 -18.76 -30.73 -45.14 -61.92 -83.99 -112.79 -150.45 177.62 137.14 109.27 81.83 -2.06 -2.73 -2.80 -2.73 -1.96 -1.68 -1.85 -2.14 -2.30 -2.52 -2.43 -1.84 -1.22 -1.06 -1.07 -1.19 -1.44 -105.55 -138.75 -160.44 -174.00 -179.13 172.00 166.98 164.05 163.07 164.84 164.25 162.38 155.68 147.58 139.74 132.15 125.05 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 2 of 5 April 2006 AH115 The Communications Edge TM Product Information ½ Watt, High Linearity InGaP HBT Amplifier 1960 MHz Application Circuit (AH115-S8PCB1960) Typical RF Performance at 25 qC Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 1960 MHz 14.3 dB -12 dB -8 dB +28.3 dBm Channel Power +22.5 dBm (+11 dBm / tone, 1 MHz spacing) (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current +44 dBm 5 dB +5 V 250 mA 0 14 -5 -5 +25°C +85°C 6 1930 1950 +25°C 85°C -40°C -20 -40°C 1940 -15 1960 1970 1980 -25 1930 1990 1940 1950 Frequency (MHz) 30 6 29 P1 dB (dBm) NF (dB) 5 4 +25°C 2 +85°C 1 -40°C 0 1930 1940 1960 1970 1970 1980 1940 1950 1980 +25°C 26 +85°C -55 +25°C -60 +85°C -65 -40°C -40°C -70 1940 1950 1960 1970 1980 1990 15 16 17 44 OIP3 (dBm) 44 OIP3 (dBm) 46 44 42 40 38 20 20 21 22 23 24 OIP3 vs. Temperature 46 18 19 freq=1960,1961 MHz, +11 dBm / tone 46 36 18 Output Channel Power (dBm) +25°C, +11 dBm / tone 38 1990 -50 OIP3 vs. Frequency 40 1980 ACPR vs. Channel Power Frequency (MHz) 42 1970 Frequency (MHz) 27 24 1930 1990 1960 -45 freq=1960, 1961 MHz,+ 25°C 12 14 16 Output Power (dBm) -40°C -25 1930 1990 28 OIP3 vs. Output Power 10 +85°C -40 Frequency (MHz) 8 +25°C IS-95, 9 ch,Fwd, ±885 KHz offset, 30 KHz Meas BW, 1960 MHz 25 1950 -15 P1 dB vs. Frequency 7 3 1960 Frequency (MHz) Noise Figure vs. Frequency -10 -20 ACPR (dBc) 10 -10 S22 (dB) 12 8 OIP3 (dBm) S22 vs. Frequency S11 vs. Freqency 0 S11 (dB) S21 (dB) S21 vs. Frequency 16 42 40 38 36 1930 36 1940 1950 1960 1970 1980 1990 -40 Frequency (MHz) -15 10 35 60 85 Temperature (°C) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 3 of 5 April 2006 AH115 The Communications Edge TM Product Information ½ Watt, High Linearity InGaP HBT Amplifier 2140 MHz Application Circuit (AH115-S8PCB2140) Typical RF Performance at 25 qC Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 2140 MHz 14.4 dB -23 dB -8 dB +28.5 dBm +42 dBm Channel Power +20 dBm Noise Figure Device / Supply Voltage Quiescent Current 5.3 dB +5 V 250 mA (@-45 dBc ACPR, IS-95 9 channels fwd) S11 vs. Frequency S21 vs. Frequency 16 S11 (dB) 12 +25°C +85°C 8 6 2110 2130 -5 +25°C -10 -40°C -15 2140 2150 2160 -25 2110 2170 2120 Noise Figure vs. Frequency 2130 -40 ACPR (dBc) 6 NF (dB) 2150 2160 5 4 +85°C 1 -40°C 2120 2150 +85°C -50 -40°C 2160 -55 16 17 41 39 19 20 20 2110 21 2120 2130 43 43 41 39 35 2110 35 2160 2170 2140 2150 OIP3 vs. Output Power 45 37 2170 -40°C Frequency (MHz) 45 37 2130 2140 2150 Frequency (MHz) 18 OIP3 (dBm) OIP3 (dBm) 43 2160 +85°C freq. = 2140, 2141, +11 dBm / tone 45 2170 +25°C 24 OIP3 vs. Temperature +25°C, +11 dBm / tone 2160 26 Output Channel Power (dBm) OIP3 vs. Frequency 2150 P1 dB vs. Frequency 22 15 2170 2140 28 +25°C -45 Frequency (MHz) 2120 2130 30 -65 2140 2120 Frequency (MHz) -60 2130 -40°C -25 2110 2170 -35 2 +85°C ACPR vs. Channel Power 7 OIP3 (dBm) 2140 3GPP W-CDMA Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz + 25°C +25°C -15 Frequency (MHz) 8 3 -10 -20 Frequency (MHz) 0 2110 -5 +85°C -20 -40°C 2120 0 P1 dB (dBm) S21 (dB) 14 10 S22 vs. Frequency 0 S22 (dB) (+11 dBm / tone, 1 MHz spacing) freq. = 2140, 2141 MHz, 25°C 41 39 37 35 -40 -15 10 35 Temperature ( °C) 60 85 6 8 10 12 14 16 18 20 Output Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 4 of 5 April 2006 AH115 The Communications Edge TM Product Information ½ Watt, High Linearity InGaP HBT Amplifier AH115-S8G (Green / Lead-free SOIC-8 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 qC reflow temperature) and leaded (maximum 245 qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The component will be marked with an “AH115G” designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an “AH115-S8” or “ECP050G” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Land Pattern Thermal Specifications Operating Case Temperature Thermal Resistance (2), Rth Junction Temperature (3), Tjc (1) MTTF vs. GND Tab Temperature 100000 Rating -40 to +85 qC 62 qC / W 162 qC Notes: 1. The amplifier can be operated at 105 C case temperature for up to 1000 hours over its lifetime without degradation in performance and will not degrade device operation at the recommended maximum 85 C case temperature for the rest of its lifetime. 2. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 3. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. MTTF (million hrs) Parameter 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. 10000 1000 100 60 70 80 90 100 110 Tab Temperature (°C) 120 Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 5 of 5 April 2006