AH2 High Dynamic Range Amplifier Product Features 50 – 1000 MHz +40 dBm OIP3 -71dBc CTB -48dBc CSO 3.5 dB Noise Figure 14.5 dB Gain +20 dBm P1dB Lead-free/Green/RoHS-compliant SOT-89 Package • Single +5 V Supply • MTTF > 100 years • • • • • • • • Product Description Functional Diagram The AH2 is a general purpose, high dynamic range amplifier targeting cable TV markets. The combination of gain flatness, high linearity and bandwidth make it ideal for CATV distribution, cable modem and laser diode driver applications. The AH2 is designed for 75 ohm systems and can operate directly from a +5 Volt DC regulator. The device is manufactured using reliable GaAs MESFET technology and boasts an MTBF of >100 years at a mounting temperature of +85 °C. It is available in the environmentally-friendly lead-free/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. GND 4 1 2 3 RF IN GND RF OUT Function Input Output/Bias Ground Pin No. 1 3 2, 4 Applications • CATV / DBS Specifications (1) Parameter Typical Performance (3) Units Min MHz MHz dB dB dB dBm dBm dB mA V 50 Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure Operating Current Range Supply Voltage 13 +37 120 Typ 800 14.5 14 17 +21 +40 3.5 150 5 Max Parameter Units 1000 Frequency S21 S11 S22 Output P1dB Output IP3 (2) Output IP2 (2) CTB (4) CSO (4) Xmod (4) Noise Figure Supply Voltage Device Current MHz dB dB dB dBm dBm dBm dBc dBc dBc dB V mA 180 1. Test conditions unless otherwise noted: T = 25 ºC, 50 Ω system. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Typical 100 14.5 -14 -17 +20 +40 +52 -71 -48 -65 3.5 860 13.2 -14 -17 +20 +40 +52 3.5 5 150 3. Parameters reflect performance in a single-ended 75 ohm circuit, as shown on page 3. 4. 77 channels 50 – 550MHz +34dBmV/channel, flat-loading Absolute Maximum Rating Parameter Rating Operating Case Temperature Storage Temperature Supply Voltage RF Input Power (continuous) Junction Temperature -40 to +85 °C -55 to +150 °C +6 V +10 dBm +220 °C Ordering Information Part No. Description AH2-G High Dynamic Range Amplifier AH2-PCB Single-ended 75 ohm Application Circuit Board (lead-free/green/RoHS-compliant SOT-89 package) Operation of this device above any of these parameters may cause permanent damage. Data Sheet: June 2012 © 2012 TriQuint Semiconductor, Inc. - 1 of 5 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH2 High Dynamic Range Amplifier Typical Device Data S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25 °C, unmatched device in a 75 ohm system) S-Parameters (VD = +5 V, ID = 150 mA, T = 25 °C, calibrated to device leads in a 75 ohm system) Freq (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -17.85 -18.10 -17.37 -16.63 -15.73 -14.91 -14.20 -13.45 -12.80 -12.18 -11.53 -11.04 -10.51 -10.02 -9.64 -9.22 -8.81 -8.48 -8.11 -7.81 -34.21 -38.37 -47.65 -55.66 -62.92 -70.31 -76.37 -81.85 -86.94 -91.91 -95.72 -99.60 -103.27 -106.94 -110.30 -113.34 -116.55 -119.17 -121.84 -124.91 14.88 14.92 14.89 14.74 14.86 14.61 14.64 14.62 14.60 14.53 14.34 14.26 14.19 14.10 14.02 13.96 13.83 13.69 13.54 13.44 172.97 171.11 168.59 165.97 162.85 160.05 157.30 154.45 151.27 148.33 146.02 143.33 140.39 137.75 134.99 132.29 129.84 127.70 125.28 122.82 -24.58 -24.56 -24.55 -24.53 -24.48 -24.45 -24.42 -24.34 -24.31 -24.32 -24.21 -24.18 -24.12 -24.11 -24.02 -23.93 -23.89 -23.85 -23.81 -23.77 4.81 2.30 1.69 1.17 0.72 0.58 0.44 0.16 -0.28 -0.47 -0.94 -1.00 -1.10 -1.54 -2.04 -2.63 -3.12 -3.33 -4.08 -4.42 -20.87 -21.20 -21.20 -20.82 -20.50 -20.36 -19.77 -19.23 -19.02 -18.49 -17.96 -17.84 -17.56 -16.97 -16.69 -16.42 -16.13 -15.87 -15.59 -15.42 -149.34 -158.61 -160.06 -159.44 -156.95 -155.78 -155.09 -152.65 -152.33 -151.93 -149.07 -148.36 -149.69 -149.32 -148.96 -148.88 -149.30 -149.09 -149.60 -150.68 Device S-parameters are available for download off of the website at: http://www.wj.com Input / Output Return Loss & Isolation Gain 15 -5 S11 S12 14 S22 -10 S21 (dB) Magnitude (dB) 0 -15 -20 13 12 11 -25 -30 10 0 200 400 600 800 1000 Frequency (MHz) Data Sheet: June 2012 © 2012 TriQuint Semiconductor, Inc. 0 200 400 600 800 1000 Frequency (MHz) - 2 of 5 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH2 High Dynamic Range Amplifier Single – Ended CATV 75 Ω Evaluation Circuit: 50 – 860 MHz (AH2-PCB) +5 V Typical RF Performance at 25 °C Frequency S21 – Gain S11 – Input R.L. S22 – Output R.L. Output IP2 MHz 100 dB 14.5 dB -11.1 dB -9.5 450 860 14.5 13.2 -12.7 -18.3 -22.9 -10.6 dBm 52.7 53.5 52.5 dBm 39.8 40.7 40.8 (+5 dBm) Output IP3 (+5 dBm / tone, 10 MHz spacing) CAP ID=C4 C=1000 pF IND ID=L3 L=270 nH CAP ID=C1 C=1000 pF PORT P=1 Z=75 Ohm SUBCKT ID=S1 NET="AH2" IND ID=L1 L=12 nH CAP ID=C3 C=1000 pF PORT P=2 Z=75 Ohm CAP ID=C2 C=2.2 pF dB Noise Figure 3.9 3.1 3.2 Device Bias +5V @ 150mA CTB dBc -71 CSO dBc -48 XMOD dBc -65 77 channels, 50-550MHz, +34dBmV/channel flat loading Circuit Board Material: .062” total thickness with a .028” FR-4 top RF layer, 4 layers (other layers added for rigidity), 1 oz copper, 75Ω Microstrip. Linearity vs. Frequency Input / Output ReturnLoss andIsolation Gain 16 Magnitude (dB) 0 50 Magnitude (dB) Intercept Point (dBm) 60 40 30 OIP3 OIP2 20 10 S22 -10 S11 -20 200 400 600 800 1000 0 200 S21-40C S2125C S2185C 400 600 800 XMOD -70 CTB -80 Noise Figure (dB) dBc -60 400 500 Frequency(MHz) Data Sheet: June 2012 © 2012 TriQuint Semiconductor, Inc. 600 600 800 1000 55 4 3 2 1 0 300 400 IP2 and IP3 vs. Power Out at 450 MHz 5 CSO -50 200 200 Frequency(MHz) Intercept Point (dBm) 77Channel Flat Loading, +34dBmV/Ch. 100 0 1000 NoiseFigure CTB, CSO, andXMODVs. Frequency 0 14 Frequency(MHz) Frequency (MHz) -40 14.5 13 -30 0 15 13.5 S12 0 15.5 50 IP2 IP3 45 40 35 30 25 0 200 400 600 Frequency(MHz) - 3 of 5 - 800 1000 -4 -2 0 2 4 6 8 10 Output power (dBm) Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH2 High Dynamic Range Amplifier Push-Pull, 75 Ω CATV Reference Design: 50 – 860 MHz Bias Vdd = 5 V, Id = 300mA Frequency MHz 100 450 750 860 S21 dB 11.1 10.8 10.6 10.5 S11 dB -10.2 -9.7 -10.8 -11 S22 dB -13.3 -14.1 -15.4 -16.4 Output IP2 dBm 72 70 72 70 Output IP3 dBm 42 43 41 40 Noise Figure dB 5.5 4.3 5.0 5.4 CTB dBc -72 CSO dBc -75 XMOD dBc -68 77 channels, 50-550MHz, +34dBmV/channel flat loading Linearity vs. Frequency S-Parameters 15 S21 5 0 -5 S11 -10 -15 S22 -20 -65 60 200 400 600 800 FREQUENCY(MHz) Data Sheet: June 2012 © 2012 TriQuint Semiconductor, Inc. 1000 XMOD 50 -70 40 30 OIP3 20 OIP2 CTB -75 CSO 10 -80 0 0 77Channel Flat Loading, +34dBmV/Ch. Output Power 70 dBc Intercept Point (dBm) 10 RETURN LOSS (dB) CTB, CSO, andXMODVs. Frequency -60 80 0 200 400 600 Frequency (MHz) - 4 of 5 - 800 1000 0 100 200 300 400 500 600 Frequency(MHz) Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH2 High Dynamic Range Amplifier AH2-G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The AH2-G will be marked with an “AH2G” designator. An alphanumeric lot code (“XXXX-X”) is also marked below the part designator on the top surface of the package. The obsolete tin-lead package is marked with an “AH2” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. Land Pattern MSL / ESD Rating ESD Rating: Value: Test: Standard: Class 1B Passes ኑ500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes ኑ1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 1 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Parameter Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) -40 to +85 °C 59 °C / W 129 °C 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5V, 150 mA at an 85 °C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 °C. Data Sheet: June 2012 © 2012 TriQuint Semiconductor, Inc. MTTF vs. GND Tab Temperature 1000 M T T F (m illio n h rs ) Thermal Specifications 100 10 1 60 70 80 90 100 Tab Temperature (°C) - 5 of 5 - 110 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®