AJT006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG A 4x .062 x 45° DESCRIPTION: .040 x 45° C 2xB ØE D The ASI AJT006 is Designed for F G H I FEATURES: M R • Input Matching Network • • Omnigold™ Metalization System N MAXIMUM RATINGS IC 0.9 A VCC 32V PDISS 25 W @ TC ≤ 75 C O TJ O -65 C to +250 C O O TSTG -65 C to +200 C θ JC 7.0 OC/W CHARACTERISTICS SYMBOL P DIM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 MAXIMUM D .286 / 7.26 .306 / 7.77 E .110 / 2.79 .130 / 3.30 F .306 / 7.77 .318 / 8.08 G .148 / 3.76 H .400 / 10.16 .119 / 3.02 I O J K L J .552 / 14.02 .572 / 14.53 K .790 / 20.07 .810 / 20.57 L .300 / 7.62 .320 / 8.13 M .003 / 0.08 .006 / 0.15 N .052 / 1.32 .072 / 1.83 P .118 / 3.00 .131 / 3.33 .230 / 5.84 R ORDER CODE: ASI10544 O TC = 25 C NONETEST CONDITIONS BVCBO IC = 1 mA BVCER IC = 5 mA BVEBO IE = 1 mA ICES VCE = 28 V hFE VCE = 5.0 V PG ηC VCC = 45 V RBE = 10 Ω IC = 250 mA POUT = 6.0 W MINIMUM TYPICAL MAXIMUM 48 V 48 V 3.5 V 30 f = 960-1215 MHz UNITS 9.3 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 300 --dB % REV. A 1/1