ADVANCED
LINEAR
DEVICES, INC.
ALD1123E/ALD1121E
QUAD/DUAL EPAD® PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY
FEATURES
BENEFITS
• Electrically Programmable Analog Device
• Precision matched electrically after packaging
• Simple, elegant single-chip user option
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CMOS Technology
Operates from 2V, 3V, 5V to 10V
Flexible basic circuit building block and design element
Very high resolution -- average e-trim voltage
resolution of 0.1mV
Wide dynamic range -- current levels from 0.1µA
to 3000µA
Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
Proven, non-volatile CMOS technology
Typical 10 years drift of less than 2mV
Usable in voltage mode or current mode
High input impedance -- 1012Ω
Very high DC current gain -- greater than 109
Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68µA
Tight matching and tracking of on-resistance
between different devices with e-trim
Wide dynamic resistance matching range
Very low input currents and leakage currents
Low cost, monolithic technology
Application-specific or in-system programming modes
Optional user software-controlled automation
Optional e-trim of any standard/custom configuration
Micropower operation
Available in standard PDIP, SOIC and hermetic CDIP packages
Suitable for matched-pair balanced circuit configuration
Suitable for both coarse and fine trimming as well as matched
MOSFET array applications
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to trimming voltage/current values
Excellent device matching characteristics with
or without additional electrical trim
Remotely and electrically trim parameters on
circuits that are physically inaccessible
Usable in environmentally sealed circuits
No mechanical moving parts -- high G-shock
tolerance
Improved reliability, dependability, dust and
moisture resistance
Cost and labor savings
Small footprint for high board density
applications
PIN CONFIGURATION
ALD1123E
PN1
1
GN1
2
DN1
M1
M2
16
SN2
15
DN2
3
14
GN2
V-1, SN1
4
13
PN2
PN4
5
12
SN3
GN4
6
11
DN3
DN4
7
10
GN3
V-2, SN4
8
9
PN3
M4
M3
ORDERING INFORMATION
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
16-Pin
Plastic Dip
Package
16-Pin
SOIC
Package
ALD1123E PC
ALD1123E SC
DC, PC, SC PACKAGE
PIN CONFIGURATION
ALD1121E
PN1
1
8
SN2
7
DN2
6
GN2
5
PN2
M1
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
8-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
ALD1121E PA
ALD1121E SA
GN1
2
DN1
3
SN1,V-
M2
4
DA, PA, SA PACKAGE
* Contact factory for industrial temperature range
© 2003 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com
APPLICATIONS
GENERAL DESCRIPTION
• Precision PC-based electronic calibration
• Automated voltage trimming or setting
• Remote voltage or current adjustment of
ALD1123E/ALD1121E are monolithic quad/dual EPAD® (Electrically Programmable Analog Device) N-channel MOSFETs with electrically adjustable threshold
(turn-on) voltage. The ALD1123E/ALD1121E are precision matched and adjusted
(e-trimmed) at the factory resulting in quad/dual MOSFETs that are highly matched
in electrical characteristics. The ALD1123E has four (4) separate source pins. SN1,
SN2 share a common substrate pin V-1 which has to be connected to the most
negative voltage potential. Likewise, SN3, SN4 share a common substrate pin V-2
which has to be connected to the negative voltage potential for SN3, SN4. The
ALD1121E has two (2) separate source pins (SN1, SN2). Both SN1, SN2 share a
common substrate pin 4 which has to be connected to the most negative voltage
potential.
inaccessible nodes
• PCMCIA based instrumentation trimming
• Electrically adjusted resistive load
• Temperature compensated current sources
and current mirrors
• Electrically trimmed/calibrated current
sources
• Permanent precision preset voltage level
shifter
• Low temperature coefficient voltage and/or
current bias circuits
• Multiple preset voltage bias circuits
• Multiple channel resistor pull-up or pull-down
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circuits
Microprocessor based process control systems
Portable data acquisition systems
Battery operated terminals and instruments
Remote telemetry systems
E-trim gain amplifiers
Low level signal conditioning
Sensor and transducer bias currents
Neural networks
Using an ALD1123E/ALD1121E MOSFET array is simple and straight forward. The
MOSFETs function in electrical characteristics as n-channel MOSFETs except that
all the devices have exceptional matching to each other. For a given input voltage,
the threshold voltage of a MOSFET device determines its drain on-current, resulting
in an on-resistance characteristic that can be precisely preset and then controlled
by the input voltage very accurately. Since these devices are on the same monolithic
chip, they also exhibit excellent tempco matching characteristics.
These MOSFET devices have very low input currents, and as a result a very high
input impedance (>10 12 Ohm). The gate voltage from a control source can drive
many MOSFET inputs with practically no loading effects. Used in precision current
mirror or current multiplier applications, they can be used to provide a current source
over a 100 nA to 3 mA range, and with either a positive, negative or zero tempco.
Optional EPAD Threshold Voltage Trimming By User
BLOCK DIAGRAM
ALD1121E
PN1 (1)
DN2 (7)
DN1 (3)
PN2 (5)
GN2 (6)
GN1(2)
~
M1
M2
V- (4)
SN1(4)
SN2 (8)
BLOCK DIAGRAM
The basic EPAD MOSFET device is a monotonically adjustable device which means
the device can normally be e-trimmed to increase in threshold voltage and to
decrease in drain-on current as a function of a given input bias voltage. Used as an
in-circuit element for trimming or setting a combination of voltage and/or current
characteristics, it can be e-trimmed remotely and automatically. Once e-trimmed,
the set voltage and current levels are stored indefinitely inside the device as a
nonvolatile stored charge, which is not affected during normal operation of the
device, even when power is turned off. A given EPAD device can be adjusted many
times to continually increase its threshold voltage. A pair of EPAD devices can also
be connected differentially such that one device is used to adjust a parameter in one
direction and the other device is used to adjust the same parameter in the other
direction.
The ALD1123E/ALD1121E can be e-trimmed with the ALD EPAD programmer to
obtain the desired voltage and current levels. Or they can be e-trimmed as an active
in-system element in a user system, via user designed interface circuitry. PN1, PN2,
etc., are pins required for optional e-trim of respective MOSFET devices. If unused,
these pins are to be connected to V- or ground. For more information, see
Application Note AN1108.
ALD1123E
PN1 (1)
DN1 (3)
DN2 (15)
GN1(2)
ALD1123E/ALD1121E
DN3 (11)
PN3 (9)
DN4 (7)
~
V-1 (4)
M2
M3
SN2 (16)
PN4 (5)
GN4 (6)
GN2 (14) GN3(10)
M1
SN1 (4)
PN2 (13)
SN3 (12)
Advanced Linear Devices
~
V-2 (8)
M4
SN4 (8)
2
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V+ referenced to VSupply voltage, VS referenced to VDifferential input voltage range
Power dissipation
Operating temperature range PA, SA, PC, SC package
DA, DC package
Storage temperature range
Lead temperature, 10 seconds
-0.3V to +13.2V
±6.6V
0.3V to V+ +0.3V
600 mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1123E
Min
Typ
Parameter
Symbol
Drain to Source Voltage 1
VDS
Initial Threshold Voltage 2
Vt i
0.990
E-trim Vt Range
Vt
1.000
Drain - Gate Connected
TCVDS
Voltage Tempco
1.000
ALD1121E
Typ
1.010
0.990
3.000
1.000
1.000
Max
Unit
10.0
V
1.010
V
3.000
V
Test
Conditions
IDS = 1µA T A = 21°C
-1.6
-1.6
mV/°C
ID = 5µA
-0.3
0.0
-0.3
0.0
mV/°C
mV/°C
ID = 50µA
ID = 68µA
+2.7
+2.7
mV/°C
ID = 500µA
VOS i
1
Tempco of VOS
TCVOS
5
4
Min
10.0
Initial Offset Voltage 3
Differential Threshold Voltage
Max
DV t
5
1
5
µV/°C
5
2.000
mV
2.000
VDS1 = VDS2
V
Tempco of Differential
Threshold Voltage 4
TCDV t
0.033
Long Term Drift
∆V t /∆t
-0.02
Long Term Drift Match
∆V t /∆t
-5
Drain Source On Current
IDS(ON)
3.0
0.033
-0.05
-0.02
mV/°C
-0.05
mV
1000 Hours
-5
µV
1000 Hours
3.0
mA
VG =VD = 5V VS = 0V
Vt = 1.0
Drain Source On Current 4
IDS(ON)
Initial Zero Tempco Voltage 3
VZTCi
Zero Tempco Current
0.8
0.8
mA
VG =VD = 5V V S = 0V
Vt = 3.0
1.52
1.52
V
V t = 1.000V
IZTC
68
68
µA
Initial On-Resistance 3
RON i
500
500
Ω
On-Resistance Match
∆RON
0.5
0.5
%
VGS ¡= 5V VDS = 0.1V
NOTES:
1. V+ must be the most positive supply rail and V- must be at the most negative supply rail. Source terminals other than those labeled as V- can be at
any voltage between V- and V+.
2. Initial Threshold Voltage is set at the factory. If no EPAD Vt trimming is intended by user, then this is also the final or permanent threshold voltage
value.
3. Initial and Final values are the same unless deliberately changed by user.
4. These parameters apply only when Vt of one or more of the devices are to be changed by user.
ALD1123E/ALD1121E
Advanced Linear Devices
3
OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1123E
Min
Typ
Transconductance
gm
1.4
1.4
mA/V
VD = 10V,VG =Vt + 4.0
Transconductance Match
∆gm
25
25
µA/V
VD = 10V,VG =Vt + 4.0
Low Level Output
Conductance
gOL
6
6
µA/V
VG = Vt +0.5V
High Level Output
Conductance
gOH
68
68
µA/V
VG = Vt +4.0V
Drain Off Leakage Current
ID(OFF)
400
4
pA
nA
TA = 125°C
100
1
pA
nA
TA = 125°C
5
10
IGSS
Input Capacitance
CISS
Cross Talk
Relaxation Time Constant
Relaxation Voltage 4
4
tRLX
VRLX
Min
400
4
5
100
1
10
Max
Unit
Test
Conditions
Symbol
Gate Leakage Current
Max
ALD1121E
Typ
Parameter
25
25
pF
60
60
dB
2
2
-0.3
-0.3
f = 100KHz
Hours
%
1.0V ≤ Vt ≤ 3.0V
E-TRIM CHARACTERISTICS
TA = 25°C V+ = +5.0V unless otherwise specified
Parameter
E-trim Vt Range
Symbol
4
Vt
Min
ALD1123E
Typ
1.000
ALD1121E
Typ
Max
Min
3.000
1.000
Max
3.000
Unit
Test
Conditions
V
Resolution of V t
E-trim Pulse Step 4
RV t
Change in Vt Per
E-trim Pulse 4
∆V t / N
E-trim Pulse Voltage 4
Vp
E-trim Pulse Current 4
Ip
Pulse Frequency 4
ƒ pulse
ALD1123E/ALD1121E
0.1
1
0.1
0.5
0.05
11.75
12.00
1
0.5
0.05
12.25
11.75
12.00
2
2
50
50
Advanced Linear Devices
mV
mV/ pulse
12.25
Vt = 1.0V
V t = 2.5V
V
mA
KHZ
4
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
+1.0
TA = +25°C
DRAIN SOURCE ON CURRENT
(mA)
DRAIN SOURCE ON CURRENT
(mA)
20
VGS = +12V
15
VGS = +10V
VGS = + 8V
10
VGS = + 6V
5
VGS = + 4V
VGS = + 2V
0
TA = +25°C
VGS = +10V
0
VGS = +6V
VGS = +8V
-1.0
0
2
4
6
8
10
12
-200 -160 -120 -80 -40
DRAIN SOURCE ON VOLTAGE (V)
40
80 120 160 +200
DRAIN SOURCE ON CURRENT vs.
THRESHOLD VOLTAGE
3.0
DRAIN SOURCE ON CURRENT
(mA)
6
DRAIN SOURCE ON CURRENT
(mA)
0
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE ON CURRENT vs.
AMBIENT TEMPERATURE
VG = 5V
5
4
Vt = 1.0V
3
Vt = 1.5V
Vt = 2.0V
2
Vt = 2.5V
1
Vt = 3.0V
-50
-25
0
25
50
75
100
TA = +25°C
VDS = +5.0V
VGS = +5V
VGS = +4V
2.0
VGS = +3V
1.0
VGS = +2V
VGS = +1V
0
0
0
125
0.5
1.0
1.5
2.0
2.5
3.0
AMBIENT TEMPERATURE (°C)
THRESHOLD VOLTAGE (V)
TRANSCONDUCTANCE vs.
THRESHOLD VOLTAGE
HIGH LEVEL OUTPUT CONDUCTANCE
vs.THRESHOLD VOLTAGE
3.5
75
2.0
HIGH LEVEL OUTPUT
CONDUCTANCE (µA/V)
TA = +25°C
TRANSCONDUCTANCE
( mA/V)
VGS = +12V
1.5
1.0
5.0
VGS = Vt + 4.0V
VDS = 10V
TA = +25°C
70
60
VGS = Vt + 4.0V
VDS = 5.0V
50
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
ALD1123E/ALD1121E
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
THRESHOLD VOLTAGE (V)
THRESHOLD VOLTAGE (V)
Advanced Linear Devices
5
TYPICAL PERFORMANCE CHARACTERISTICS
LOW LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
12
4.0
ID = 1.0µA
3.0
Vt = 3.0V
2.0
Vt = 2.0V
LOW LEVEL OUTPUT
CONDUCTANCE(µA/V)
THRESHOLD VOTAGE
(V)
VDS = VGS
Vt = 2.5V
Vt = 1.5V
1.0
Vt = 1.0V
VGS = Vt + 0.5V
VDS = 5.0V
10
8
6
4
2
0
-50
-25
0
25
50
75
100
-50
125
-25
AMBIENT TEMPERATURE (°C)
DRAIN OFF LEAKAGE CURRENT (pA)
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
TRANSCONDUCTANCE
(mA/V)
2.5
2.0
1.5
1.0
0.5
0
-50
-25
0
25
50
75
100
400
300
IDS
200
100
0
-50
-25
70
60
50
40
50
75
100
25
50
75
100
125
10
TA = +25°C
5
VGS = Vt + 0.5V
VDS = 5.0V
0
125
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
THRESHOLD VOTAGE (V)
AMBIENT TEMPERATURE (°C)
ALD1123E/ALD1121E
0
LOW LEVEL OUTPUT CONDUCTANCE
vs. THRESHOLD VOLTAGE
LOW LEVEL CURRENT OUTPUT
CONDUCTANCE (µA/V)
HIGH LEVEL OUTPUT
CONDUCTANCE (mA/V)
80
25
125
100
AMBIENT TEMPERATURE (°C)
VGS = Vt + 4.0V
VDS = 5.0V
0
75
500
125
100
-25
50
600
HIGH LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
-50
25
DRAIN OFF LEAKAGE CURRENT IDS
vs. AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
90
0
AMBIENT TEMPERATURE (°C)
Advanced Linear Devices
6
TYPICAL PERFORMANCE CHARACTERISTICS
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
100
-55°C
4
-25°C
3
0°C
2
1
70°C
0
0
CHANGE IN DIFFERENTIAL
THRESHOLDVOLTAGE (mV)
DRAIN SOURCE ON CURRENT
( µA)
5
1
2
3
125°C
4
Zero Temperature
Coefficient (ZTC)
ZTC
125°C
125°C
125°C
50
{
{
Vt
= 1.0V
{
Vt
= 1.2V
- 25°C
Vt
= 1.4V
- 25°C
- 25°C
1.0
5
1.4
1.2
1.8
1.6
2.0
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
CHANGE IN DIFFERENTIAL THRESHOLD
VOLTAGE vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. ON - RESISTANCE
10000
+10
+8
REPRESENTATIVE UNITS
+6
+4
+2
0
-2
-4
-6
-8
VDS = RON • IDS(ON)
VGS = +0.9V to +5.0V
1000
VDS = 5.0V
100
D
VDS
10
IDS(ON)
VGS
1.0
S
VDS = 0.5V
0.1
-10
-50
-25
0
25
50
75
100
0.1
125
1.0
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
4
IDS(ON)
VGS
VDS = 0.5V
TA = +125°C
S
3
VDS = 0.5V
TA = +25°C
2
VDS = 5V
TA = +25°C
1
VDS = 5V
VDS = RON • IDS(ON)
TA = +125°C
0
0.1
1
10000
10
100
1000
Vt = 1.000V
VDS = VGS
4
TA = -55°C
3
TA = 0°C
2
TA = +50°C
1
TA = +125°C
0
10000
DRAIN SOURCE ON CURRENT (µA)
ALD1123E/ALD1121E
1000
5
VDS
D
100
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
DRAIN SOURCE ON CURRENT
(mA)
5
10
ON - RESISTANCE (KΩ)
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE (V)
ZTC
0
DRAIN SOURCE ON CURRENT,
BIAS CURRENT (µA)
DRAIN SOURCE ON CURRENT
(mA)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
0
1
2
3
4
5
OUTPUT VOLTAGE (V)
Advanced Linear Devices
7
TYPICAL PERFORMANCE CHARACTERISTICS
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
OFFSET VOLTAGE (mV)
3
GATE LEAKAGE CURRENT (pA)
4
REPRESENTATIVE UNITS
2
1
0
-1
-2
-3
600
500
400
300
200
IGSS
100
0
-4
-50
-25
0
25
50
75
100
-50
125
GATE SOURCE VOLTAGE
vs. ON - RESISTANCE
+125°C
VGS
DRAIN- GATE DIODE CONNECTED
VOLTAGE TEMPCO (mV/ °C )
GATE SOURCE VOLTAGE (V)
4.0
VDS
IDS(ON)
S
0.0V ≤ VDS ≤ 5.0V
3.0
+25°C
2.0
1.0
0.1
1
10
100
25
50
75
100
125
1000
5
-55°C ≤ TA ≤ +125°C
2.5
0
-2.5
-5
10000
ON - RESISTANCE (KΩ)
ALD1123E/ALD1121E
0
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
5.0
D
-25
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
1
10
100
1000
DRAIN SOURCE ON CURRENT (µA)
Advanced Linear Devices
8