e ADVANCED LINEAR DEVICES, INC. TM EPAD EN ® AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® MATCHED PAIR MOSFET ARRAYS VGS(th)= -1.3V GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are monolithic quad/dual N-Channel MOSFETS matched at the factory using ALD’s proven EPAD CMOS technology. These devices are intended for low voltage, small signal applications. They are excellent functional replacements for normally-closed relay applications, as they are normally on (conducting) without any power applied, but could be turned off or modulated when system power supply is turned on. These MOSFETS have the unique characteristics of, when the gate is grounded, operating in the resistance mode for low drain voltage levels and in the current source mode for higher voltage levels and providing a constant drain current. • Functional replacement of Form B (NC) relay • Zero power fail safe circuits • Backup battery circuits • Power failure detector • Fail safe signal detector • Source followers and buffers • Precision current mirrors • Precision current sources • Capacitives probes • Sensor interfaces • Charge detectors • Charge integrators • Differential amplifier input stage • High side switches • Peak detectors • Sample and Hold • Alarm systems • Current multipliers • Analog switches • Analog multiplexers • Voltage comparators • Level shifters These MOSFETS are designed for exceptional device electrical characteristics matching. As these devices are on the same monolithic chip, they also exhibit excellent temperature tracking characteristics. They are versatile as design components for a broad range of analog applications, and they are basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. Besides matched pair electrical characteristics, each individual MOSFET also exhibits well controlled parameters, enabling the user to depend on tight design limits. Even units from different batches and different date of manufacture have correspondingly well matched characteristics. These depletion mode devices are built for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying applications in single 1.5V to +/-5V systems where low input bias current, low input capacitance and fast switching speed are desired. These devices exhibit well controlled turn-off and sub-threshold charactersitics and therefore can be used in designs that depend on sub-threshold characteristics. The ALD114813/ALD114913 are suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. A sample calculation of the DC current gain at a drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is recommended that the user, for most applications, connect V+ pin to the most positive voltage potential (or left open unused) and V- and N/C pins to the most negative voltage potential in the system. All other pins must have voltages within these voltage limits. FEATURES • Depletion mode (normally ON) without power • Precision Gate Threshold Voltages: -1.30V +/- 0.04V • Nominal RDS(ON) @VGS=0.0V of 1.3KΩ • Matched MOSFET to MOSFET characteristics • Tight lot to lot parametric control • Low input capacitance • VGS(th) match (VOS) — 20mV • High input impedance — 1012Ω typical • Positive, zero, and negative VGS(th) temperature coefficient • DC current gain >108 • Low input and output leakage currents ORDERING INFORMATION Operating Temperature Range* 0°C to +70°C 0°C to +70°C 16-Pin Plastic Dip Package 16-Pin SOIC Package 8-Pin Plastic Dip Package ALD114813PC ALD114813SC ALD114913PA 8-Pin SOIC Package ALD114913SA PIN CONFIGURATION ALD114813 N/C* 1 GN1 2 DN1 V- V- M1 3 M2 V+ S12 4 V- 5 DN4 6 GN4 7 N/C* 8 VM4 M3 V- V- 16 N/C* 15 GN2 14 DN2 13 V+ 12 S34 11 DN3 10 GN3 9 N/C* 8 N/C* 7 GN2 6 DN2 5 V- PC, SC PACKAGES ALD114913 N/C* 1 GN1 2 DN1 S12 3 4 V- V- M1 M2 V- PA, SA PACKAGES *N/C pins are internally connected. Connect to V- to reduce noise * Contact factory for industrial temp. range or user-specified threshold voltage values Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-Source voltage, VDS Gate-Source voltage, VGS Power dissipation Operating temperature range PA, SA, PC, SC package Storage temperature range Lead temperature, 10 seconds 10.6V 10.6V 500 mW 0°C to +70°C -65°C to +150°C +260°C OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V (or open) V- = -5V TA = 25°C unless otherwise specified CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. ALD114813/ALD114913 Parameter Symbol Gate Threshold Voltage VGS(th) Offset Voltage VGS(th)1-VGS(th)2 Min -1.34 Typ Max -1.30 -1.26 VOS 7 20 Offset Voltage Tempco TCVOS GateThreshold Voltage Tempco Unit Test Conditions V IDS =1µA VDS = 0.1V mV IDS =1µA 5 µV/ °C VDS1 = VDS2 TCVGS(th) -1.7 0.0 +1.6 mV/ °C ID= 1µA ID= 20µA, VDS = 0.1V ID= 40µA On Drain Current IDS (ON) 12.0 3.0 mA VGS = +8.2 V VGS = +2.7V VDS = +5V Forward Transconductance GFS 1.4 mmho VGS = +2.7V VDS = +7.7V Transconductance Mismatch ∆GFS 1.8 % Output Conductance GOS 68 µmho VGS =+2.7V VDS = +7.7V Drain Source On Resistance RDS (ON) 500 Ω VDS = 0.1V VGS = +2.7V Drain Source On Resistance RDS (ON) 1.3 KΩ VDS = 0.1V VGS = +0.0V Drain Source On Resistance Tolerance ∆RDS (ON) 7 % Drain Source On Resistance Mismatch ∆RDS (ON) 0.5 % Drain Source Breakdown Voltage BVDSX Drain Source Leakage Current1 IDS (OFF) Gate Leakage Current1 10 V IDS = 1.0µA VGS = -2.3V 10 100 4 pA nA VGS =-2.3V, VDS =+5V TA = 125°C IGSS 3 30 1 pA nA VDS = 0V VGS = +10V TA =125°C Input Capacitance CISS 2.5 pF Transfer Reverse Capacitance CRSS 0.1 pF Turn-on Delay Time ton 10 ns V+ = 5V RL= 5KΩ Turn-off Delay Time toff 10 ns V+ = 5V RL= 5KΩ 60 dB f = 100KHz Crosstalk Notes: 1 Consists of junction leakage currents ALD114813/ALD114913 Advanced Linear Devices 2