ALD ALD212900SAL Dual high drive zero threshold matched pair Datasheet

e
ADVANCED
LINEAR
DEVICES, INC.
TM
EPAD
EN
®
AB
LE
D
ALD212900/ALD212900A
PRECISION N-CHANNEL
EPAD® MOSFET
ARRAY
VGS(th)= +0.00V
DUAL HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR
GENERAL DESCRIPTION
FEATURES & BENEFITS
®
ALD212900A/ALD212900 precision N-Channel EPAD MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These
dual monolithic devices are enhanced additions to the ALD110900A/ALD110900
EPAD® MOSFET Family, with increased forward transconductance and output
conductance, particularly at very low supply voltages.
Intended for low voltage, low power small signal applications, the ALD212900A/
ALD212900 features Zero-Threshold™ voltage, which enables circuit designs
with input/output signals referenced to GND at enhanced operating voltage
ranges. With these devices, a circuit with multiple cascading stages can be
built to operate at extremely low supply/bias voltage levels. For example, a
nanopower input amplifier stage operating at <0.2V supply voltage has been
successfully built with these devices.
ALD212900A/ALD212900 EPAD MOSFETs feature exceptional matched pair
device electrical characteristics of Gate Threshold Voltage VGS(th) set precisely
at +0.00V +0.01V, IDS = +20µA @ VDS = 0.1V, with a typical offset voltage of
only +/- 0.001V (1mV). Built on a single monolithic chip, they also exhibit excellent temperature tracking characteristics. These precision devices are versatile
as design components for a broad range of analog small signal applications
such as basic building blocks for current mirrors, matching circuits, current
sources, differential amplifier input stages, transmission gates, and multiplexers. They also excel in limited operating voltage applications, such as very low
level voltage-clamps and nano-power normally-on circuits.
In addition to precision matched-pair electrical characteristics, each individual
EPAD MOSFET also exhibits well controlled manufacturing characteristics, enabling the user to depend on tight design limits from different production batches.
These devices are built for minimum offset voltage and differential thermal response, and they can be used for switching and amplifying applications in +0.1V
to +10V (+/- 0.05V to +/- 5V) powered systems where low input bias current, low
input capacitance, and fast switching speed are desired. At VGS > 0.00V, the
device exhibits enhancement mode characteristics whereas at VGS <0.00V the
device operates in the subthreshold voltage region and exhibits conventional
depletion mode characteristics, with well controlled turn-off and sub-threshold
levels that operate the same as standard enhancement mode MOSFETs.
ALD212900A/ALD212900 features high input impedance (2.5 x 1010Ω) and high
DC current gain (>108). A sample calculation of the DC current gain at a drain
output current of 30mA and input current of 300pA at 25°C is 30mA/300pA =
100,000,000, which translates into a dynamic operating current range of about
eight orders of magnitude. A series of four graphs titled “Forward Transfer Characteristic”, with sub-titles of second “expanded (subthreshold)”, third “further
expanded (subthreshold)” and fourth “Low Voltage” illustrates the unique wide
dynamic operating range of these devices.
Generally it is recommended that the V+ pin be connected to the most positive
voltage and the V- and IC (internally-connected) pins to the most negative voltage in the system. All other pins must have voltages within these voltage limits
at all times. Standard ESD protection facilities and handling procedures for static
sensitive devices are highly recommended when using these devices.
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
• Zero Threshold™ VGS(th) = 0.00 V +/-0.01V
• VOS (VGS(th) match) to 2mV / 10mV max.
• Sub-threshold voltage ( nano-power) operation
• < 100 mV Min. operating voltage
• < 1 nA Min. operating current
• < 1 nW Min. operating power
• > 100,000,000:1 operating current ranges
• High transconductance and output conductance
• Low RDS(ON) of 14Ω
• Output current > 50 mA
• Matched and tracked tempco
• Tight lot-to-lot parametric control
• Positive, zero, and negative VGS(th) tempco
• Low input capacitance and leakage currents
APPLICATIONS
• Low overhead current mirrors and current sources
• Zero Power Normally-On circuits
• Energy harvesting circuits
• Very low voltage analog and digital circuits
• Zero power fail-safe circuits
• Backup battery circuits & power failure detector
• Extremely low level voltage-clamps
• Extremely low level zero-crossing detector
• Matched source followers and buffers
• Precision current mirrors and current sources
• Matched capacitive probes and sensor interfaces
• Charge detectors and charge integrators
• High gain differential amplifier input stage
• Matched peak-detectors and level-shifters
• Multiple Channel Sample-and-Hold switches
• Precision Current multipliers
• Discrete matched analog switches / multiplexers
• Nanopower discrete voltage comparators
PIN CONFIGURATION
ALD212900
IC*
1
GN1
2
DN1
3
S12
4
V-
V-
M1
M2
V-
8
V+
7
GN2
6
DN2
5
V-
Operating Temperature Range*
0°C to +70°C
8-Pin SOIC
Package
8-Pin Plastic Dip
Package
ALD212900ASAL
ALD212900SAL
ALD212900APAL
ALD212900PAL
SAL, PAL PACKAGES
*IC pins are internally connected, connect to V-
* Contact factory for industrial temp. range or user-specified threshold voltage values.
©2013 Advanced Linear Devices, Inc., Vers. 1.0
www.aldinc.com
1 of 12
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
10.6V
Gate-Source voltage, VGS
10.6V
Operating Current
80 mA
Power dissipation
500 mW
Operating temperature range SAL, PAL
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = GND TA = 25°C unless otherwise specified
ALD212900A
Parameter
Symbol
ALD212900
Min
Typ
Max
Min
Typ
-0.01
0.00
0.01
-0.02
0.00
0.02
2
2
10
Gate Threshold Voltage
VGS(th)
Offset Voltage
VOS
1
Offset Voltage Tempco
TCVOS
5
GateThreshold Voltage Tempco
TCVGS(th)
On Drain Current
IDS (ON)
Max
Unit
Test Conditions
V
IDS =20µA, VDS = 0.1V
mV
VGS(th)1-VGS(th)2
5
µV/°C
VDS1 = VDS2
-1.7
0.0
+0.6
-1.7
0.0
+1.6
mV/°C
ID = 20µA, VDS = 0.1 V
ID = 760 uA, VDS = 0.1V
ID = 1.5 mA, VGS = 0.1 V
79
79
mA
VGS = +3.0V, VDS = +3V
85
85
µA
VGS = +0.1V, VDS = +0.1V
VGS = +3.0V
VDS = +3.0V
Forward Transconductance
GFS
38
38
mmho
Transconductance Mismatch
∆GFS
1.8
1.8
%
Output Conductance
GOS
2.3
2.3
mmho
VGS = +3.0V
VDS = +3.0V
Drain Source On Resistance
RDS (ON)
14
14
Ω
VGS = +5.0V
VDS = +0.1V
Drain Source On Resistance
RDS (ON)
5
1.18
5
1.18
KΩ
VGS = +0.0V, VDS = +0.1V
VGS = +0.1V, VDS = +0.1V
Drain Source On Resistance
Tolerance
∆RDS (ON)
1.8
1.8
%
VDS = +0.1V
VGS = +5.0V
Drain Source On Resistance
Mismatch
∆RDS (ON)
0.6
0.6
%
Drain Source Breakdown
Voltage
BVDSX
Drain Source Leakage Current1
IDS (OFF)
10
V
V-= VGS = -1.0V
IDS = 10µA
400
pA
4
nA
VGS = -1.0V, VDS =+5V
V- = -5V
TA = 125°C
200
1
pA
nA
VGS = +5V, VDS = 0V
TA =125°C
10
10
400
10
4
Gate Leakage Current1
IGSS
5
Input Capacitance
CISS
30
30
pF
Transfer Reverse Capacitance
CRSS
2
2
pF
Turn-on Delay Time
ton
10
10
ns
V+ = 5V, RL= 5KΩ
Turn-off Delay Time
toff
10
10
ns
V+ = 5V, RL= 5KΩ
60
60
dB
f = 100KHz
Crosstalk
Notes:
1
200
1
5
Consists of junction leakage currents
ALD212900/ALD212900A
Advanced Linear Devices
2 of 12
PERFORMANCE CHARACTERISTICS OF EPAD®
PRECISION MATCHED PAIR MOSFET FAMILY
ALD2108xx/ALD2148xx/ALD2129xx/ALD2169xx high precision
monolithic quad/dual N-Channel MOSFET arrays are enhanced
versions of the ALD1108xx/ALD1109xx EPAD® MOSFET family, with
increased forward transconductance and output conductance, intended for operation at very low power supply voltages. These devices are also capable of sub-threshold operation with <1nA of operating supply currents and at the same time delivering higher output drive currents (typ. >50mA). They feature precision Gate Offset Voltages, VOS , defined as the difference in VGS(th) between
MOSFET pairs M1 and M2 or M3 and M4.
ALD's Electrically Programmable Analog Device (EPAD®) technology provides the industry's only family of matched MOSFET transistors with a range of precision gate-threshold voltage values. All
members of this family are designed and actively programmed for
exceptional matching of device electrical and temperature characteristics. Gate Threshold Voltage VGS(th) values range from -3.50V
Depletion Mode to +3.50V Enhancement Mode devices, including
standard products with VGS(th) specified at -3.50V, -1.30V, -0.40V,
+0.00V, +0.20V, +0.40V, +0.80V, +1.40V, and +3.30V. ALD can
also provide any customer desired VGS(th) between -3.50V and
+3.50V on a special order basis. For all these devices ALD EPAD
technology enables excellent well-controlled gate threshold voltage, subthreshold voltage, and low leakage characteristics. With
well matched design and precision programming, units from different production lots provide the user with exceptional matching and
uniformity characteristics. Built on the same monolithic IC chip, the
units also have excellent temperature tracking characteristics.
This ALD2108xx/ALD2148xx/ALD2129xx/ALD2169xx EPAD
MOSFET Array product family (EPAD MOSFET) is available in three
separate categories, each providing a distinctly different set of electrical specifications and characteristics. The first category is the
ALD210800A/ALD210800/ALD212900A/ALD212900 Zero-Threshold™ mode EPAD MOSFETs. The second is the ALD2108xx/
ALD2129xx enhancement mode EPAD MOSFETs. The third category includes the ALD2148xx/ALD2169xx depletion mode EPAD
MOSFETs. (The suffix “xx” denotes threshold voltage in 0.1V steps,
for example, xx=08 denotes 0.80V). For each device, there is a
zero-tempco bias current and bias voltage point. When a design
utilizes such a feature, then the gate-threshold voltage is temperature stable, greatly simplifying certain designs where stability of
certain circuit parameters over a temperature range is desired.
ALD210800A/ALD210800 (quad) and ALD212900A/ALD212900
(dual) EPAD MOSFETs are Zero Threshold MOSFET transistors in
which the individual gate-threshold voltage of each MOSFET is set
at zero, defined as VGS(th) = 0.00V at IDS(ON) = 10µA @ VDS(ON)
= +0.1V. Zero Threshold MOSFETs operate in the enhancement
region when operated above threshold voltage (VGS > 0.00V and
IDS > 10µA) and subthreshold region when operated at or below
threshold voltage (VGS <= 0.00V and IDS < 10µA). These devices,
along with other low VGS(th) members of the product family, enable
ultra low supply voltage analog or digital operation and nanopower
circuit designs, thereby reducing or eliminating the use of very high
valued (expensive) resistors in many cases.
The ALD2108xx/ALD2129xx (quad/dual) product family features
precision matched enhancement mode EPAD MOSFET devices,
which require a positive gate bias voltage VGS to turn on. Precision
VGS(th) values at +3.30V, +1.40V, +0.80V, +0.40V and +0.20V are
offered. No conductive channel exists between the source and drain
at zero applied gate voltage (VGS = 0.00V) for +3.30V, +1.40V and
+0.80V versions. The +0.40V and the +0.20V versions have a subthreshold current at about 1nA and 100nA for the ALD2108xx (2nA
and 200nA for the ALD2129xx) respectively at zero applied gate
voltage. They are also capable of delivering lower RDS(ON) and
higher output currents greater than 68mA (see specifications).
ALD212900/ALD212900A
The ALD2148xx/ALD2169xx (quad/dual) features Depletion Mode
EPAD MOSFETs, which are normally-on devices at zero applied
gate voltage. The VGS(th) is set at a negative voltage level (VGS <
VS and VGS >V-) at which the EPAD MOSFET turns off. Without a
supply voltage and/or with VGS = V- = 0.00V = Ground, the EPAD
MOSFET device is already turned on and exhibits a defined and
controlled on-resistance RDS(ON). An EPAD MOSFET may be
turned off when a negative voltage is applied to V- pin and VGS set
more negative than its VGS(th). These Depletion Mode EPAD
MOSFETs are different from most other depletion mode MOSFETs
and JFETs in that they do not exhibit high gate leakage currents
and channel/junction leakage currents, while they stay controlled,
modulated and turned off at precise voltages. The same MOSFET
device equations as those for enhancement mode devices apply.
KEY APPLICATION ENVIRONMENTS
EPAD MOSFETs are ideal for circuits requiring low VOS and low
operating currents with tracked differential thermal responses. They
feature low input bias currents (less than 200pA max.), low input
capacitance and fast switching speed. These and other operating
characteristics offer unique solutions in one or more of the following operating environments:
* Low supply voltage: 0.1V to 10V or +0.05V to +5V
* Ultra low supply voltage: less than +10mV to +0.1V
* Nanopower operation: voltage x current = nW or uW
* Precision VOS characteristics
* Matching and tracking of multiple MOSFETs
* Matching across multiple packages
ELECTRICAL CHARACTERISTICS
The turn-on and turn-off electrical characteristics of the EPAD
MOSFET products are shown in the IDS(ON) vs. VDS(ON) and
IDS(ON) vs. VGS graphs. Each graph shows IDS(ON) versus VDS(ON)
characteristics as a function of VGS in a different operating region
under different bias conditions, while IDS(ON) at a given gate input
voltage is controlled and predictable. A series of four graphs titled
“Forward Transfer Characteristics”, with the second and third subtitled “expanded (subthreshold)” and “further expanded (subthreshold)”, and the fourth sub-titled “low voltage”, illustrates the wide
dynamic operating range of these devices.
Classic MOSFET equations for an N-channel MOSFET also apply
to EPAD MOSFETs. The drain current in the linear region (VDS(ON)
< VGS - VGS(th)) is given by:
IDS(ON) = u . COX . W/L . [VGS - VGS(th) - VDS/2] . VDS(ON)
where:
u = Mobility
COX = Capacitance / unit area of Gate electrode
VGS = Gate to Source Voltage
VGS(th) = Gate Threshold (Turn-on)Voltage
VDS(ON) = Drain to Source On Voltage
W = Channel width
L = Channel length
In this region of operation the IDS(ON) value is proportional to the
VDS(ON) value and the device can be used as a gate-voltage controlled resistor.
For higher values of VDS(ON) where VDS(ON) >= VGS - VGS(th),
the saturation current IDS(ON) is now given by (approx.):
IDS(ON) = u . COX . W/L . [VGS - VGS(th)]2
Advanced Linear Devices
3 of 12
PERFORMANCE CHARACTERISTICS OF EPAD®
PRECISION MATCHED PAIR MOSFET FAMILY (cont.)
SUB-THRESHOLD REGION OF OPERATION
PERFORMANCE CHARACTERISTICS
The gate threshold (turn-on) voltage VGS(th) of the EPAD MOSFET
is a voltage below which the MOSFET conduction channel rapidly
turns off. For analog designs, this gate threshold voltage directly
affects the operating signal voltage range and the operating bias
current levels.
Performance characteristics of the EPAD MOSFET product family
are shown in the following graphs. In general, the gate threshold
voltage shift for each member of the product family causes other
affected electrical characteristics to shift linearly with VGS(th) bias
voltage. This linear shift in VGS causes the subthreshold I-V curves
to shift linearly as well. Accordingly, the subthreshold operating current can be determined by calculating the gate source voltage drop
relative to its gate threshold voltage, VGS(th).
At a voltage below VGS(th), an EPAD MOSFET exhibits a turn-off
characteristic in an operating region called the subthreshold region.
This is when the EPAD MOSFET conduction channel rapidly turns
off as a function of decreasing applied gate voltage. The conduction channel, induced by the gate voltage on the gate electrode,
decreases exponentially and causes the drain current to decrease
exponentially as well. However, the conduction channel does not
shut off abruptly with decreasing gate voltage, but rather decreases
at a fixed rate of about 104mV per decade of drain current decrease.
For example, for the ALD2108xx device, if the gate threshold voltage is +0.20V, the drain current is 10µA at VGS = +0.20V. At VGS =
+0.096V, the drain current would decrease to 1µA. Extrapolating
from this, the drain current is about 0.1µA at VGS = 0.00V, 1nA at
VGS = -0.216V, and so forth. This subthreshold characteristic extends all the way down to current levels below 1nA and is limited by
junction leakage currents.
At a drain current of “zero current” as defined and selected by the
user, the VGS voltage at that zero current can now be estimated.
Note that using the above example, with VGS(th) = +0.20V, the drain
current still hovers around 100nA when the gate is at ground voltage. With a device that has VGS(th) = +0.40V (part number
ALD210804), the drain current is about 2nA when the gate is at
ground potential. Thus in this case an input signal referenced to
ground can operate with a natural drain current of only 2nA internal
bias current, dissipating nano-watts of power.
LOW POWER AND NANOPOWER
When supply voltages decrease, the power consumption of a given
load resistor decreases as the square of the supply voltage. Thus,
one of the benefits in reducing supply voltage is to reduce power
consumption. While decreasing power supply voltages and power
consumption go hand-in-hand with decreasing useful AC bandwidth
and increased noise effects in the circuit, a circuit designer can
make the necessary tradeoffs and adjustments in any given circuit
design and bias the circuit accordingly for optimal performance.
With EPAD MOSFETs, a circuit that performs any specific function
can be designed so that power consumption of that circuit is minimized. These circuits operate in low power mode where the power
consumed is measure in mW, µW, and nW (nano-watt) region and
still provide a useful and controlled circuit function operation.
ZERO TEMPERATURE COEFFICIENT (ZTC) OPERATION
For an EPAD MOSFET in this product family, operating points exist
where the various factors that cause the current to increase as a
function of temperature balance out those that cause the current to
decrease, thereby canceling each other, and resulting in a net temperature coefficient of near zero. An example of this temperature
stable operating point is obtained by a ZTC voltage bias condition,
which is 0.38V above VGS(th) when VDS(ON) = +0.1V, resulting in
a temperature stable current level of about 380µA for the ALD2108xx
and 760µA for the ALD2129xx devices.
NORMALLY-ON FIXED RDS(ON) AT VGS = GROUND
Several members of this EPAD MOSFET family produce a fixed
resistance when their gate is grounded. For ALD210800, the drain
current at VDS = 0.1V is @ 10µA at VGS = 0.00V. Thus just by
grounding the gate of the ALD210800, a resistor with RDS(ON) =
~10 KΩ is produced. ( For ALD212900 device, RDS(ON) = ~5 KΩ)
When an ALD214804 gate is grounded, the drain current IDS =
424µA @ VDS = 0.1V, producing RDS(ON) = ~236 Ω. Similarly,
ALD214813 and ALD214835 produces 1.71mA and 3.33mA for
each MOSFET respectively at VGS = 0.0V, producing RDS(ON)
values of 59Ω and 30Ω, respectively. For example, when all 4
MOSFETs in an ALD214835 are connected in parallel, an on-resistance of 30/4 =~ 7.5Ω is measured between the Drain and Source
terminals when VGS = V- = 0.00V, producing a fixed on-resistance
without any gate bias voltages applied to the device.
MATCHING CHARACTERISTICS
One of the key performance benefits of using matched-pair EPAD
MOSFETs is to maintain temperature tracking between the different devices in the same package. In general, for EPAD MOSFET
matched pair devices, one device of the matched pair has gate
leakage currents, junction temperature effects, and drain current
temperature coefficient as a function of bias voltage that cancel
out similar effects of the other device, resulting in a temperature
stable circuit. As mentioned earlier, this temperature stability can
be further enhanced by biasing the matched-pairs at Zero Tempco
(ZTC) point, even though that may require special circuit configurations and power consumption design considerations.
POWER SUPPLY SEQUENCES AND ESD CONTROL
EPAD MOSFETs are robust and reliable, as demonstrated by more
than a decade of production history supplied to a large installed
base of customers across the world. However, these devices do
require a few design and handling precautions in order for them to
be used successfully.
EPAD MOSFETs, being a CMOS Integrated Circuit, in addition to
having Drain, Gate and Source pins normally found in a MOSFET
device, have three other types of pins, namely V+, V- and IC pins.
V+ is connected to the substrate, which must always be connected
to the most positive supply in a circuit. V- is the body of the MOSFET,
which must be connected to the most negative supply voltage in
the circuit. IC pins are internally connected pins, which must also
be connected to V-. Drain, Gate and Source pins must have voltages between V- and V+ at all times.
Proper power-up sequencing requires powering up supply voltages
before applying any signals. During the power down cycle, remove
all signals before removing V- and V+. This way internally back
biased diodes are never allowed to become forward biased, possibly causing damage to the device.
Standard ESD control procedures should be observed so that static
charge does not degrade the performance of the devices.
ALD212900/ALD212900A
Advanced Linear Devices
4 of 12
TYPICAL PERFORMANCE CHARACTERISTICS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
40
100
DRAIN SOURCE ON CURRENT
IDS(ON) (mA)
VGS=VGS(th)+3.0V
80
VGS=VGS(th)+2.5V
60
VGS=VGS(th)+2.0V
40
VGS=VGS(th)+1.5V
20
VGS=VGS(th)+1.0V
VGS=VGS(th)+0.5V
0
30
20
2V
10
1V
0
VGS - VGS(th) = 0.5V
-10
-20
-30
-40
-0.4
10
-0.3
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
VGS(th)
= -0.8V
VGS(th) = +0.2V
40
VGS(th) = +0.4V
VGS(th)
= -0.4V
20
VGS(th) = +0.8V
VGS(th)
= -0.2V
VGS(th) = +1.4V
0
-4
-2
2
0
4
6
0.3
0.4
0.5
100.00
10.00
1.00
0.10
0.01
-5
8
ALD212914
1000.00
-4
-3
-2
-1
0
+2
+1
GATE SOURCE VOLTAGE - VGS (V)
FORWARD TRANSFER CHARACTERISTICS
LOW VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
FURTHER EXPANDED (SUBTHRESHOLD)
1000000.00
DRAIN SOURCE ON CURRENT
IDS(ON) (nA)
DRAIN SOURCE ON CURRENT
IDS(ON) (µA)
0.2
ALD216913
10000.00
GATE SOURCE VOLTAGE - VGS (V)
500
0.1
ALD212902
ALD212904
ALD212908
VGS(th) = 0.0V
ALD216908
DRAIN SOURCE ON CURRENT
IDS(ON) (nA)
DRAIN SOURCE ON CURRENT
IDS(ON) (mA)
VGS(th) = -3.5V
60
TA =
+ 25°C
100000.00
VGS(th)
= -1.3V
0.0
FORWARD TRANSFER CHARACTERISTICS
EXPANDED (SUBTHRESHOLD)
1000000.00
TA = + 25°C
VDS = + 5V
80
-0.1
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
FORWARD TRANSFER CHARACTERISTICS
100
-0.2
ALD216904
8
ALD216902
6
4
2
ALD212900
0
400
5V
4V
3V
V- = 0V
ALD216935
DRAIN SOURCE ON CURRENT
IDS(ON) (mA)
OUTPUT CHARACTERISTICS
100000.00
VDS = + 5.0V
TA = + 25°C
300
200
100
TA = + 25°C
10000.00
1000.00
100.00
10.00
1.00
0.10
0.01
0
-0.4 -0.3 -0.2
-0.1
0
+0.1 +0.2 +0.3 +0.4 +0.5
-0.4
-0.3
-0.2
-0.1
0.0
+0.1
+0.2
GATE SOURCE OVERDRIVE VOLTAGE
VGS - VGS(th) (V)
GATE SOURCE OVERDRIVE VOLTAGE
VGS - VGS(th) (V)
ALD212900/ALD212900A
-0.5
Advanced Linear Devices
5 of 12
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
HIGH LEVEL OUTPUT CONDUCTANCE
vs. GATE THRESHOLD VOLTAGE
LOW LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
HIGH LEVEL OUTPUT
CONDUCTANCE - GOS (mA/V)
LOW LEVEL OUTPUT
CONDUCTANCE - GOS (µA/V)
1000
VGS = VGS(th) + 0.5V
VDS = + 3.0V
800
600
400
200
TA = + 25°C
2.50
2.25
2.00
VGS = VGS(th) + 3.0V
VDS = + 3.0V
1.75
1.50
0
-50
-25
0
+25
+50
+75
+100
-4.0
+125
-2.0
-1.0
0.0
+1.0
+2.0
+3.0
GATE THRESHOLD VOLTAGE - VGS(th) (V)
LOW LEVEL OUTPUT CONDUCTANCE
vs. GATE THRESHOLD VOLTAGE
HIGH LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
HIGH LEVEL OUTPUT
CONDUCTANCE - GOS ( m A / V )
3.50
TA = + 25°C
800
600
400
VGS = VGS(th) + 0.5V
VDS = + 3.0V
200
0
-4.0
-3.0
-2.0
-1.0
0
+1.0
+2.0
VGS = VGS(th)+ 3.0V
VDS = + 3.0V
3.25
3.00
2.75
2.50
2.25
2.00
+3.0
-50
GATE THRESHOLD VOLTAGE - VGS(th) (V)
-25
0
+25
+50
+75
+100
+125
AMBIENT TEMPERATURE - TA (°C)
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
TRANSCONDUCTANCE vs.
GATE THRESHOLD VOLTAGE
100
80
TRANSCONDUCTANCE
GFS ( m A / V )
TRANSCONDUCTANCE
GFS (mA/V)
-3.0
AMBIENT TEMPERATURE - TA (°C)
1000
LOW LEVEL OUTPUT
CONDUCTANCE - GOS (µA/V)
2.75
80
VGS = VGS(th) + 3.0V
VDS = + 3.0V
60
40
20
0
VGS = VGS(th) + 3.0V
VDS = 3.0V
TA = +25°C
60
40
20
0
-50
-25
0
+25
+50
+75
+100
+125
-4.0
AMBIENT TEMPERATURE - TA (°C)
ALD212900/ALD212900A
-3.0
-2.0
-1.0
0.0
+1.0
+2.0
+3.0
GATE THRESHOLD VOLTAGE - VGS(th) (V)
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6 of 12
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
ZERO TEMPERATURE COEFFICIENT (ZTC)
1000
100
DRAIN SOURCE ON CURRENT
IDS(ON) (µA)
DRAIN SOURCE ON CURRENT
IDS(ON) (mA)
OUTPUT CHARACTERISTICS
0°C
-55°C
80
60
+70°C
+25°C
+125°C
40
20
VGS = VGS(th) + 3V
0
VDS = + 0.1V
800
600
+125°C
400
+25°C
200
- 55°C
0
0
1
2
3
4
5
+0.1
0
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
+25°C
60
40
0°C
20
+125°C
0
0
1
2
3
4
5
GATE SOURCE OVERDRIVE VOLTAGE
VGS-VGS(th) (V)
80
+0.5
+0.4
5
V+ = VDS = + 5V
4
+125°C
+70°C
3
2
-55°C
0°C
1
+25°C
0
0
10
20
30
40
50
60
70
GATE SOURCE OVERDRIVE VOLTAGE
VGS - VGS(th) (V)
DRAIN SOURCE ON CURRENT - IDS(ON) (mA)
GATE SOURCE OVERDRIVE VOLTAGE
vs. DRAIN SOURCE ON CURRENT
GATE THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
2.0
5
VDS = + 0.1V
4
+125°C
+25°C
3
+70°C
0°C
2
- 55°C
1
GATE THRESHOLD VOLTAGE
VGS(th) (V)
DRAIN SOURCE ON CURRENT
IDS(ON) (mA)
-55°C
+70°C
+0.3
GATE SOURCE OVERDRIVE VOLTAGE
vs. DRAIN SOURCE ON CURRENT
100
VDS = + 1.0V
+0.2
GATE SOURCE OVERDRIVE VOLTAGE
VGS - VGS(th) (V)
DRAIN SOURCE ON CURRENT vs.
GATE SOURCE OVERDRIVE VOLTAGE
GATE SOURCE OVERDRIVE VOLTAGE
VGS-VGS(th) (V)
Zero Temperature
Coefficient (ZTC)
VDS = + 0.1V
ID = 20µA
1.0
VGS(th) = 0.8V
0
VGS(th) = 0.0V
-1.0
VGS(th) = -1.4V
-2.0
0
0
2
4
6
8
10
DRAIN SOURCE ON CURRENT - IDS(ON) (mA)
ALD212900/ALD212900A
Advanced Linear Devices
-50
-25
0
+25
+50
+75
+100
+125
AMBIENT TEMPERATURE - TA (°C)
7 of 12
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
600
+10
+8
500
+6
+4
OFFSET VOLTAGE
VOS (mV)
DRAIN OFF LEAKAGE CURRENT
IDS(OFF) (pA)
DRAIN OFF LEAKAGE CURRENT IDS(OFF)
vs. AMBIENT TEMPERATURE
400
300
200
IDS(OFF)
REPRESENTATIVE UNITS
VOS = VGS(th)M1 - VGS(th)M2
+2
0
-2
-4
-6
-8
100
0
-10
-50
-25
0
+25
+50
+75
+100
+125
AMBIENT TEMPERATURE - TA (°C)
ALD212900/ALD212900A
-50
-25
0
+25
+50
+75
+100
+125
AMBIENT TEMPERATURE - TA (°C)
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8 of 12
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
V+ = +5V
V+ = +5V
V+ = +5V
M3
ISET
M3
M4
RSET
ISOURCE
RSOURCE
Digital Logic Control
of Current Source
ON
ISET
M4
RSET
ISOURCE
M1
M2
OFF
M1, M2:
ALD1101,
ALD1116,
V+ - Vt
ISOURCE = ISET =
ALD1109xx,
RSET
ALD2129xx,
where Vt = VGS - VGS(th) = VDS
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1106,
1/2 ALD1108xx, or
1/2 ALD2108xx
M1:
1/2 ALD1101,
1/2 ALD1116,
1/2 ALD1109xx,
1/2 ALD2129xx,
1/4 ALD1103,
1/4 ALD1105,
1/4 ALD1106,
1/4 ALD1108xx, or
1/4 ALD2108xx
M3, M4:
ALD1102,
ALD1117,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1107, or
1/2 ALD3107xx
RSOURCE
M1
M1, M2: N - Channel MOSFET
M3, M4: P - Channel MOSFET
M3, M4:
ALD1102,
ALD1117,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1107, or
1/2 ALD3107xx
: N - Channel MOSFET
M1
M3, M4 : P - Channel MOSFET
CURRENT SOURCE MULTIPLICATION
DIFFERENTIAL AMPLIFIER
V+ = +5V
V+ = +5V
V+
Package N
Package 1
ISET
RSOURCE
RSET
ISOURCE = ISET x N
PMOS PAIR
M4
M3
VIN+
MSET
M2
M3
MN
M2
M1
Current
Source
MSET, M1..MN:
N x ALD1101, N x ALD1116,
N x ALD1109xx, N x ALD2129xx,
N x ALD1103, N x ALD1106,
N x ALD1108xx, or
N x ALD2108xx
M3, M4:
ALD1102,
ALD1117,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1107, or
1/2 ALD3107xx
All M's in the set are
from the same part number.
M1, M2: N - Channel MOSFET
M3, M4: P - Channel MOSFET
ALD212900/ALD212900A
M1
VIN-
NMOS PAIR
M1, M2:
ALD1101,
ALD1116,
ALD1109xx,
ALD2129xx,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1106,
1/2 ALD1108xx, or
1/2 ALD2108xx
VOUT
MSET, M1..MN: N - Channel MOSFET
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9 of 12
TYPICAL APPLICATIONS (cont.)
BASIC CURRENT SOURCES
N- CHANNEL CURRENT SOURCE
V+ = +5V
RSOURCE
ISOURCE
P- CHANNEL CURRENT SOURCE
V+ = +5V
V+ = +5V
ISET
RSET
8
M2 8
6
M1
2
7
7
6
M3
3
5
3
2
M4
5
1
V+ - Vt
ISOURCE = ISET =
RSET
where Vt = VGS - VGS(th) = VDS
ISET
M1, M2:
ALD1101,
ALD1116,
ALD1109xx,
ALD2129xx,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1106,
1/2 ALD1108xx, or
1/2 ALD2108xx
RSET
RSOURCE
ISOURCE
M3, M4:
ALD1102,
ALD1117,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1107, or
1/2 ALD3107xx
M3, M4: P - Channel MOSFET
M1, M2 :N - Channel MOSFET
CASCODE CURRENT SOURCES
ISOURCE
RSOURCE
M4
M2
V+ = +5V
V+ = +5V
V+ = +5V
ISET
RSET
M1
M2
M3
M4
M3
M1
ISET
M1, M2:
ALD1101,
ALD1116,
ALD2129xx,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1106, or
1/2 ALD2108xx
M3, M4:
ALD1101,
ALD1116,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1106, or
1/2 ALD2108xx
M1, M2, M3, M4: N - Channel MOSFET
where M1 and M2 is a matched pair
and M3 and M4 is a second matched pair.
ALD212900/ALD212900A
M1, M2:
ALD1102,
ALD1117,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1107, or
1/2 ALD3107xx
RSET
RSOURCE
ISOURCE
M3, M4:
ALD1102,
ALD1117,
1/2 ALD1103,
1/2 ALD1105,
V+ - 2Vt
1/2 ALD1107, or
ISOURCE = ISET =
RSET
1/2 ALD3107xx
where Vt = VGS - VGS(th) = VDS
M1, M2, M3, M4: P - Channel MOSFET
where M1 and M2 is a matched pair
and M3 and M4 is a second matched pair.
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10 of 12
SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Dim
S (45°)
D
A
Min
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-8
4.69
5.00
0.185
0.196
E
3.50
4.05
0.140
0.160
1.27 BSC
e
A
A1
e
b
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
S (45°)
H
L
ALD212900/ALD212900A
C
ø
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11 of 12
PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
E
E1
Millimeters
D
S
A2
A1
e
b
b1
A
L
Inches
Dim
Min
Max
Min
Max
A
3.81
5.08
0.105
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-8
9.40
11.68
0.370
0.460
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
L
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
S-8
1.02
2.03
0.040
0.080
0°
15°
0°
15°
ø
c
e1
ALD212900/ALD212900A
ø
Advanced Linear Devices
12 of 12