ALD ALD4212SC Cmos low voltage high speed quad precision analog switch Datasheet

ADVANCED
LINEAR
DEVICES, INC.
ALD4211/ALD4212
ALD4213
CMOS LOW VOLTAGE HIGH SPEED QUAD PRECISION ANALOG SWITCHES
GENERAL DESCRIPTION
FEATURES
The ALD4211/ALD4212/ALD4213 are quad SPST CMOS analog
switches specifically designed for low voltage, high speed applications
where 0.2pC charge injection, 200pf sampling capacitor, and picoamp
leakage current are important analog switch operating characteristics.
These analog switches feature fast switching, low on-resistance and
micropower consumption.
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TheALD4211/4212/4213 are designed for precision applications such as
charge amplifiers, sample and hold amplifiers, data converter switches,
and programmable gain amplifiers. These switches are also excellent for
low voltage micropower general purpose switching applications.
APPLICATIONS INFORMATION
The ALD4211/4212/4213 operate with a standard single power supply
from +3V to +12Volts. Functionality extends down to a +2 volt power
supply making it suitable for lithium battery or rechargeable battery
operated systems where power, efficiency, and performance are
important design considerations. Break-before-make switching is
guaranteed with single supply operation. The ALD4211/4212/4213
may also be used with dual power supplies from ±1.5 to ±6 volts.
With special charge balancing and charge cancellation circuitry on
chip the ALD4211/ALD4212/ALD4213 were developed for ultra low
charge injection applications. Using a 200pF sampling capacitor, very
fast precise signal acquisition may be achieved. With ultra low
quiescent current, these switches interface directly to CMOS logic
levels from microprocessor or logic circuits. On the board level, low
charge injection and fast operation may be achieved by using short
leads, minimizing input and output capacitances, and by adequate
bypass capacitors placed on the board at the supply nodes. For more
information, see Application Note AN4200.
The ALD4211/ALD4212/ALD4213 are manufactured with Advanced Linear
Devices enhanced ACMOS silicon gate CMOS process. They are
designed also as linear cell elements in Advanced Linear Devices’
“Function-Specific” ASIC.
3V, 5V and ±5V supply operation
0.2pC charge injection
200pF sampling capacitor
pA leakage current
0.1µW power dissipation
High precision
Rail to rail signal range
Low On-resistance
Break-before-make switching
BENEFITS
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Five times faster signal capture
Low switching transients
Low signal loss
Essentially no DC power consumption
Full analog signal range from rail to rail
Flexible power supply range for battery
operated systems
APPLICATIONS
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Fast sample and hold
Computer peripherals
PCMCIA
Low level signal conditioning circuits
Portable battery operated systems
Analog signal multiplexer
Programmable gain amplifiers
Switched capacitor circuits
Micropower based systems
Video/audio switches
Feedback control systems
PIN CONFIGURATION/ BLOCK DIAGRAM
ORDERING INFORMATION
Operating Temperature Range
-55°C to +125°C
-40°C to +85°C
-40°C to +85°C
IN1
1
16
IN2
COM1
2
15
COM2
16-Pin
CERDIP
Package
16-Pin
Plastic Dip
Package
16-Pin
SOIC
Package
OUT1
3
14
OUT2
V-
4
13
V+
ALD4211 DC
ALD4212 DC
ALD4213 DC
ALD4211 PC
ALD4212 PC
ALD4213 PC
ALD4211 SC
ALD4212 SC
ALD4213 SC
GND
5
12
NC
OUT4
6
11
OUT3
COM4
7
10
COM3
IN4
8
9
LOGIC TABLE
Input Logic
Switch State
ALD4211 ALD4212
ALD4213
Switch 1 / Switch 4
0
1
On
Off
Off
On
Off
On
IN3
DC, PC, SC PACKAGE
Switch 2 / Switch 3
On
Off
* Contact factory for industrial temperature range.
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V+ referenced to VGND
Terminal voltage range (any terminal) Note 1
Power dissipation
Operating temperature range PC, SC package
DC package
Storage temperature range
Lead temperature, 10 seconds
DC current (any terminal)
-0.3V to +13.2V
-0.3V to +13.2V
(V- -0.3)V to (V+ +0.3)V
600 mW
-40°C to +85°C
-55°C to +125°C
-65°C to +150°C
+260°C
10mA
POWER SUPPLY RANGE
4211/4212/4213 (PC,SC)
Parameter
Symbol
Supply
Voltage
VSUPPLY
Min
Typ
±1.5
3.0
Max
4211/4212/4213 (DC)
Min
±6.0
12.0
Typ
Max
±1.5
3.0
Unit
±6.0
12.0
V
V
Dual Supply
Single Supply
Unit
Test Conditions
DC ELECTRICAL CHARACTERISTICS
TA = 25°C V+ = +5.0V, V- = -5.0V GND = 0.0V unless otherwise specified
4211/4212/4213 (PC,SC)
Parameter
Symbol
Analog Signal Range
VA
On - Resistance
RON
Change of On-Resistance
from -VS to +V S
∆RON
Change of On-Resistance
with Temperature
∆RON /∆T
Min
-5.0
4211/4212/4213 (DC)
Min
Typ
Max
-5.0
135
190
5.0
V
90
135
Ω
140
210
16
16
0.43
0.43
2
2
50
ICOML
Max
5.0
90
120
RON Match between
Switches
Off Com Leakage
Current
Typ
100
500
50
%
%/°C
%
100
4000
Off Out Leakage
Current
50
IOUTL
100
500
50
100
4000
On Channel
Leakage Current
50
ID(ON)
100
500
50
100
4000
4.0
pA
pA
pA
-40°C to +85°C
-55°C to +125°C
4.0
Logic "1"
VIL
0.8
0.8
V
Input High or
Input Low Current
IH
IIL
10
10
nA
Supply Current
ISUPPLY
1
µA
Advanced Linear Devices
VOUT = ±4.0V, V COM = -/+4.0V
pA
pA
pA
Input Low Voltage
ALD4211/ALD4212
ALD4213
-40°C to +85°C
-55°C to +125°C
-40°C to +85°C
-55°C to +125°C
VIH
1
VCOM = ±4.0V,VOUT = -/+4.0V
pA
pA
pA
Input High Voltage
0.01
VA = 0V IA = 1mA
-40°C to +85°C
-55°C to +125°C
0.01
Logic "0"
2
AC ELECTRICAL CHARACTERISTICS
TA = 25 °C V+ = +5.0V, V- = -5.0V, GND = 0.0V unless otherwise specified
4211/4212/4213(PC) 4211/4212/4213(DC) 4211/4212/4213(SC)
Min
Typ Max Min Typ Max Min Typ
Max
Parameter
Symbol
Turn On
Delay time
Unit
Test Conditions
tON
60
130
60
130
60
130
ns
(Note 2)
Turn Off
Delay time
tOFF
60
130
60
130
60
130
ns
(Note 2)
Charge Injection
QINJ
0.2
1.0
0.2
1.0
0.2
1.0
pC
(Note 3) (Note 4)
Off Isolation
75
75
75
dB
At f = 100KHz, (Note 5)
Crosstalk
90
90
90
dB
At f = 100KHz, (Note 6)
0.05
0.01
0.05
0.01
0.05
0.01
%
RL = 10K
R L = 100K
Total Harmonic
Distortion
THD
Com/Out
Off Capacitance
COM(OFF)
OUT(OFF)
3.0
3.0
3.0
pF
Channel On
Capacitance
CDS (ON)
5.7
5.7
5.7
pF
Pin to Pin
Capacitance
CPP
0.5
0.6
0.25
pF
DC ELECTRICAL CHARACTERISTICS
TA = 25°C V+ = +5.0V, V- = GND = 0.0V unless otherwise specified
Parameter
Symbol
Analog Signal Range
VA
On - Resistance
RON
Change of On-Resistance
from -V S to +VS
∆RON
Change of On-Resistance
with Temperature
∆RON /∆T
4211/4212/4213 (PC,SC)
Min
Typ
Max
0.0
Off Com Leakage
Current
+5.0
195
250
RON Match
Between Switches
0.0
280
365
V
195
280
Ω
270
390
20
0.43
0.43
2
2
100
500
Unit
+5.0
20
50
ICOML
4211/4212/4213 (DC)
Min
Typ
Max
50
50
IOUTL
100
500
50
%/°C
%
100
100
4000
On Channel
Leakage Current
50
ID(ON)
100
500
50
100
4000
4.0
pA
pA
pA
VCOM = +/-4.0V,VOUT = -/+4.0V
pA
pA
pA
VOUT = +/-4.0V,VCOM = -/+4.0V
pA
pA
pA
4.0
VIH
Input Low Voltage
VIL
0.8
0.8
V
Input High or
Input Low Current
IIH
IIL
10
10
nA
Supply Current
ISUPPLY
1
µA
1
-40°C to +85°C
-55°C to +125°C
-40°C to +85°C
-55°C to +125°C
-40°C to +85°C
-55°C to +125°C
Logic "1"
Input High Voltage
0.01
VA = 0V IA = 1mA
-40°C to +85°C
-55°C to +125°C
%
4000
Off Out Leakage
Current
Test Conditions
0.01
Logic "0"
Notes: 1. Voltage on any terminal must be less than (V+) + 0.3V and greater than (V-) - 0.3V, at all times including before power is applied and V+ =V- = 0.0V. Vsupply
power supply needs to be sequenced on first on power turn-on and sequenced off last during power turn-off. 2. See Switching Time Test Circuit. Break-before-make time is
not guaranteed. Turn on and turn off time may overlap. 3. Guaranteed by design. 4. See Charge Injection Test Circuit 5. See Off Isolation Test Circuit 6. See Crosstalk
Test Circuit. 7. See switching time test circuit.
ALD4211/ALD4212
ALD4213
Advanced Linear Devices
3
AC ELECTRICAL CHARACTERISTICS
TA = 25°C V+ = +5.0V, V- = GND = 0.0V unless otherwise specified
Parameter
Turn On
Delay time
Turn Off
Delay time
Symbol
4211/4212/4213 (PC) 4211/4212/4213 (DC) 4211/4212/4213 (SC)
Min
Typ Max Min
Typ Max
Min Typ Max
Unit
Test Conditions
tON
85
170
85
170
85
170
ns
(Note 7)
tOFF
46
90
46
90
46
90
ns
(Note 7)
Break-Before-Make
Delay Time
tBD
Charge Injection
QINJ
15
40
0.2
15
1.0
40
0.2
15
1.0
40
0.2
ns
1.0
pC
(Note 3) (Note 4)
Off Isolation
75
75
75
dB
At f = 100KHz, (Note 5)
Crosstalk
90
90
90
dB
At f = 100KHz, (Note 6)
0.05
0.01
0.05
0.01
0.05
0.01
%
RL = 10K
R L = 100K
Total Harmonic
Distortion
THD
Com/Out
Off Capacitance
COM(OFF)
OUT(OFF)
3.0
3.0
3.0
pF
Channel On
Capacitance
CDS (ON)
5.7
5.7
5.7
pF
Pin to Pin
Capacitance
CPP
0.5
0.6
0.25
pF
The ALD4211/ALD4212/ALD4213
precision due to these factors:
feature very high
1. The analog switch has ultra low capacitive charge coupling
so that the charge stored on a 200pF sampling capacitor
is minimally affected.
2. With special charge balancing and charge cancellation
circuitry designed on chip, the ALD4211/ALD4212/
ALD4213 achieves ultra low charge injection of typically
only 0.2pC resulting in extremely low signal distortion to
the external circuit.
The ALD4211/ALD4212/ALD4213 CMOS analog switches,
when used with industry standard pinout connection, have
the input and output pins reversed with the signal source
input connected to OUT pins and COM pins used as output
pins. In this connection and when used with 1,000pF or
greater value capacitors, or when connected to a DC current
or resistive load, the switch would not be operating in an ultra
low charge injection mode. Typical charge injection, in this
case, would be 5pC as the pin to pin capacitive coupling
effect would dominate. In this connection, all the other
characteristics of the ALD4211/ALD4212/ALD4213 CMOS
analog switches remain the same.
3. The analog switch switching transistors have pA leakage
currents minimizing the droop rate of the sampling circuit.
4. The internal switch timing allows for the analog switch to
turn off internally without producing any residual transistor
channel charge injection, which may affect external
circuits. With a low loss polystyrene or polypropylene
sampling capacitor, long data retention times are possible
without significant signal loss.
ALD4211/ALD4212
ALD4213
Advanced Linear Devices
4
DC ELECTRICAL CHARACTERISTICS
TA = 25°C V+ = +3.0V, V- = GND = 0.0V unless otherwise specified
4211/4212/4213 (PC,SC)
Parameter
Symbol
Analog Signal Range
VA
On - Resistance
RON
Change of On-Resistance
from -V S to +VS
∆RON
Change of On-Resistance
with Temperature
∆RON /∆T
Min
Typ
0.0
500
620
Typ
Max
0.0
700
880
Unit
3.0
V
500
700
Ω
680
1000
43
43
0.27
0.27
2
2
50
ICOML
4211/4212/4213 (DC)
Min
3.0
RON Match
Between Switches
Off Com
Leakage Current
Max
100
500
50
IOUTL
%/°C
%
50
100
500
100
50
100
4000
Channel On
Leakage Current
50
ID(ON)
100
500
50
100
4000
4.0
VA = 0V IA = 1mA
-40°C to +85°C
-55°C to +125°C
%
4000
Off Out
Leakage Current
VCOM = ±4.0V,VOUT = -/+4.0V
pA
pA
pA
-40°C to +85°C
-55°C to +125°C
pA
pA
pA
-40°C to +85°C
-55°C to +125°C
pA
pA
pA
-40°C to +85°C
-55°C to +125°C
VOUT = ±4.0V,VCOM = -/+4.0V
4.0
Logic "1"
Input High Voltage
VIH
Input Low Voltage
VIL
0.8
0.8
V
Input High or
Input Low Current
IIH
IIL
10
10
nA
Supply Current
ISUPPLY
1
µA
0.01
Test Conditions
1
0.01
Logic "0"
AC ELECTRICAL CHARACTERISTICS
TA = 25 °C V+ = +3.0V, V- = GND = 0.0V unless otherwise specified
4211/4212/4213 (PC) 4211/4212/4213 (DC) 4211/4212/4213 (SC)
Parameter
Symbol
Turn On Delay time
tON
Turn Off Delay time
tOFF
Break-Before-Make
Delay Time
tBD
Charge Injection
QINJ
Min
20
Typ
Max
Typ
Max
Typ
Max
Unit
Test Conditions
160
300
160
300
160
300
ns
(Note 7)
78
1500
78
150
78
150
ns
(Note 7)
82
0.2
Min
20
0.5
82
0.2
Min
20
0.5
82
0.2
ns
0.5
pC
(Note 3) (Note 4)
Off Isolation
75
75
75
dB
At f = 100KHz, (Note 5)
Crosstalk
90
90
90
dB
At f = 100KHz, (Note 6)
0.05
0.01
0.05
0.01
0.05
0.01
%
Total Harmonic
Distortion
THD
Com/Out
Off Capacitance
COM(OFF)
OUT(OFF)
3.0
3.0
3.0
pF
Channel On
Capacitance
CDS (ON)
5.7
5.7
5.7
pF
Pin to Pin
Capacitance
CPP
0.5
0.6
0.25
pF
ALD4211/ALD4212
ALD4213
Advanced Linear Devices
RL = 10K
R L = 100K
5
TYPICAL PERFORMANCE CHARACTERISTICS
ON RESISTANCE AS A
FUNCTION OF SIGNAL VOLTAGE
POWER DISSIPATION AS A
FUNCTION OF FREQUENCY
240
ON - RESISTANCE (Ω)
POWER DISSIPATION (mW)
1.0
VSUPPLY = 5V
0.8
0.6
0.4
0.2
200
VSUPPLY = 10V
160
125°C
85°C
25°C
-25°C
-55°C
120
80
40
0
0
1
10
100
1000
0
10000
2
ON RESISTANCE AS A
FUNCTION OF SIGNAL VOLTAGE
10
8
ON RESISTANCE AS A
FUNCTION OF SIGNAL VOLTAGE
500
850
400
ON - RESISTANCE (Ω)
ON - RESISTANCE (Ω)
6
SIGNAL VOLTAGE (V)
FREQUENCY (KHz)
VSUPPLY = 5V
300
125°C
85°C
25°C
- 25°C
- 55°C
200
100
0
VSUPPLY = 3V
700
550
125°C
400
85°C
25°C
- 25°C
- 55°C
250
100
0
1
2
3
5
4
0
1.2
0.6
SIGNAL VOLTAGE (V)
1.8
2.4
3.0
SIGNAL VOLTAGE (V)
SWITCH DELAY TIME AS A FUNCTION
OF SUPPLY VOLTAGE
SWITCH DELAY TIME AS A FUNCTION
OF SUPPLY VOLTAGE
250
200
SWITCH DELAY TIME (ns)
250
SWITCH DELAY TIME (ns)
4
ALD 4211
ALD4213, SW2, 3
150
100
TURN ON DELAY TIME
50
TURN OFF DELAY TIME
0
200
ALD4212
ALD4213 SW1, 4
150
100
TURN ON DELAY TIME
50
TURN OFF DELAY TIME
0
3
4
5
6
7
8
9
10
SUPPLY VOLTAGE (V)
ALD4211/ALD4212
ALD4213
3
4
5
6
7
8
9
10
SUPPLY VOLTAGE (V)
Advanced Linear Devices
6
TYPICAL PERFORMANCE CHARACTERISTICS
SUPPLY CURRENT AS A
FUNCTION OF INPUT VOLTAGE
SUPPLY CURRENT AS A
FUNCTION OF INPUT VOLTAGE
100
1.6
SUPPLY CURRENT (µA)
SUPPLY CURRENT (µA)
2.0
VSUPPLY = 10V
1.2
0.8
0.4
80
VSUPPLY = 5V
60
40
20
0
0
0
6
4
2
8
0
10
SUPPLY CURRENT AS A
FUNCTION OF INPUT VOLTAGE
TOTAL HARMONIC DISTORTION (%)
SUPPLY CURRENT (µA)
VSUPPLY = 3V
6
4
2
0
0.6
2.4
1.8
1.2
100
10
VSUPPLY = 5V
VS = 0.355 VRMS
RL = 10K
1
0.1
0.01
RL = 100K
0.001
3.0
1.0
0.1
INPUT VOLTAGE (V)
10
100
FREQUENCY (KHz)
SWITCH DELAY TIME AS A
FUNCTION OF TEMPERATURE
CHARGE INJECTION AS A FUNCTION
OF SOURCE RESISTANCE
3.0
NC: Normally Closed
NO: Normally Open
200
150
VSUPPLY = 5V
TURN ON DELAY TIME
NC
NO
100
NO
NC
50
TURN OFF DELAY TIME
0
-75
-25
25
75
CHARGE INJECTION (PC)
250
SWITCH DELAY TIME (ns)
5
4
TOTAL HARMONIC DISTORTION AS
A FUNCTION OF FREQUENCY
10
0
3
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
8
2
1
2.5
2.0
1.0
0.5
CL = 200pF
0
100
TEMPERATURE (°C)
ALD4211/ALD4212
ALD4213
CL = 1000pF
1.5.
0
10
20
30
40
50
SOURCE RESISTANCE (Ω)
Advanced Linear Devices
7
TEST CIRCUITS
CROSSTALK TEST CIRCUIT
SWITCHING TIME TEST CIRCUIT
C C
Vi = 1Vr ms
100kHz
50Ω
4211.STTC.E
V+
V-
V+
COM1
S
V-
V+
RL = 1KΩ
OUT1
V-
V+
VO
VS = 3V
CL = 15pF
OUT2
COM2
V-
COM1
OUT1
IN1
GND
GND
Logic Input
100kHz
CL = 15pF
RL = 1KΩ
4.5V
0V
RL = 1KΩ
tr = tf ≤ 20ns
CCRR = 20 log [ VO/Vi ]
50%
50%
Logic Input
VO
10%
OFF ISOLATION TEST CIRCUIT
V+
Vi = 1Vrms
100kHz
50Ω
90%
V-
V-
V+
COM1
VO
CL = 35pF
OUT1
RL =
1KΩ
IN1
VO
ton / toff
CL = 15pF
toff / ton
GND
QIRR = 20 log (VO/Vi)
CHARGE INJECTION TEST CIRCUIT
4211.CITC.EP
V+
V-
V+
COM1
VOUT1
IN1
GND
TOTAL HARMONIC DISTORTION
TEST CIRCUIT
VO
CL = 200pF
4211.THDTC.EPS.W
V+
4.5V
0.5V
Logic Input
100kHz
Vi = 1Vpp
100kHz
COM1
50Ω
Logic Input
VO
V-
V+
V-
OUT1
VO
RL =
1KΩ
IN1
GND
∆VO
ALD4211/ALD4212
ALD4213
∆Q = CL∆VO
Advanced Linear Devices
CL = 15pF
8
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