ADVANCED LINEAR DEVICES, INC. ALD4211/ALD4212 ALD4213 CMOS LOW VOLTAGE HIGH SPEED QUAD PRECISION ANALOG SWITCHES GENERAL DESCRIPTION FEATURES The ALD4211/ALD4212/ALD4213 are quad SPST CMOS analog switches specifically designed for low voltage, high speed applications where 0.2pC charge injection, 200pf sampling capacitor, and picoamp leakage current are important analog switch operating characteristics. These analog switches feature fast switching, low on-resistance and micropower consumption. • • • • • • • • • TheALD4211/4212/4213 are designed for precision applications such as charge amplifiers, sample and hold amplifiers, data converter switches, and programmable gain amplifiers. These switches are also excellent for low voltage micropower general purpose switching applications. APPLICATIONS INFORMATION The ALD4211/4212/4213 operate with a standard single power supply from +3V to +12Volts. Functionality extends down to a +2 volt power supply making it suitable for lithium battery or rechargeable battery operated systems where power, efficiency, and performance are important design considerations. Break-before-make switching is guaranteed with single supply operation. The ALD4211/4212/4213 may also be used with dual power supplies from ±1.5 to ±6 volts. With special charge balancing and charge cancellation circuitry on chip the ALD4211/ALD4212/ALD4213 were developed for ultra low charge injection applications. Using a 200pF sampling capacitor, very fast precise signal acquisition may be achieved. With ultra low quiescent current, these switches interface directly to CMOS logic levels from microprocessor or logic circuits. On the board level, low charge injection and fast operation may be achieved by using short leads, minimizing input and output capacitances, and by adequate bypass capacitors placed on the board at the supply nodes. For more information, see Application Note AN4200. The ALD4211/ALD4212/ALD4213 are manufactured with Advanced Linear Devices enhanced ACMOS silicon gate CMOS process. They are designed also as linear cell elements in Advanced Linear Devices’ “Function-Specific” ASIC. 3V, 5V and ±5V supply operation 0.2pC charge injection 200pF sampling capacitor pA leakage current 0.1µW power dissipation High precision Rail to rail signal range Low On-resistance Break-before-make switching BENEFITS • • • • • • Five times faster signal capture Low switching transients Low signal loss Essentially no DC power consumption Full analog signal range from rail to rail Flexible power supply range for battery operated systems APPLICATIONS • • • • • • • • • • • Fast sample and hold Computer peripherals PCMCIA Low level signal conditioning circuits Portable battery operated systems Analog signal multiplexer Programmable gain amplifiers Switched capacitor circuits Micropower based systems Video/audio switches Feedback control systems PIN CONFIGURATION/ BLOCK DIAGRAM ORDERING INFORMATION Operating Temperature Range -55°C to +125°C -40°C to +85°C -40°C to +85°C IN1 1 16 IN2 COM1 2 15 COM2 16-Pin CERDIP Package 16-Pin Plastic Dip Package 16-Pin SOIC Package OUT1 3 14 OUT2 V- 4 13 V+ ALD4211 DC ALD4212 DC ALD4213 DC ALD4211 PC ALD4212 PC ALD4213 PC ALD4211 SC ALD4212 SC ALD4213 SC GND 5 12 NC OUT4 6 11 OUT3 COM4 7 10 COM3 IN4 8 9 LOGIC TABLE Input Logic Switch State ALD4211 ALD4212 ALD4213 Switch 1 / Switch 4 0 1 On Off Off On Off On IN3 DC, PC, SC PACKAGE Switch 2 / Switch 3 On Off * Contact factory for industrial temperature range. © 2005.1 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com ABSOLUTE MAXIMUM RATINGS Supply voltage, V+ referenced to VGND Terminal voltage range (any terminal) Note 1 Power dissipation Operating temperature range PC, SC package DC package Storage temperature range Lead temperature, 10 seconds DC current (any terminal) -0.3V to +13.2V -0.3V to +13.2V (V- -0.3)V to (V+ +0.3)V 600 mW -40°C to +85°C -55°C to +125°C -65°C to +150°C +260°C 10mA POWER SUPPLY RANGE 4211/4212/4213 (PC,SC) Parameter Symbol Supply Voltage VSUPPLY Min Typ ±1.5 3.0 Max 4211/4212/4213 (DC) Min ±6.0 12.0 Typ Max ±1.5 3.0 Unit ±6.0 12.0 V V Dual Supply Single Supply DC ELECTRICAL CHARACTERISTICS TA = 25°C V+ = +5.0V, V- = -5.0V GND = 0.0V unless otherwise specified 4211/4212/4213 (PC,SC) Parameter Symbol Analog Signal Range VA On - Resistance RON Change of On-Resistance from -V S to +VS ∆RON Change of On-Resistance with Temperature ∆RON/∆T Min -5.0 4211/4212/4213 (DC) Min Typ Max -5.0 135 190 V 90 135 Ω 140 210 16 0.43 0.43 2 2 100 500 50 50 I OUTL 100 500 50 50 I D(ON) 100 500 50 % 100 100 100 4000 4.0 pA pA pA -40°C to +85°C -55°C to +125°C 4.0 Logic "1" VIL 0.8 0.8 V Input High or Input Low Current IH I IL 10 10 nA Supply Current I SUPPLY 1 µA Advanced Linear Devices V OUT = ±4.0V, VCOM = -/+4.0V pA pA pA Input Low Voltage ALD4211/ALD4212 ALD4213 -40°C to +85°C -55°C to +125°C -40°C to +85°C -55°C to +125°C VIH 1 V COM = ±4.0V,VOUT = -/+4.0V pA pA pA Input High Voltage 0.01 VA = 0V IA = 1mA -40°C to +85°C -55°C to +125°C %/°C 4000 On Channel Leakage Current Test Conditions % 4000 Off Out Leakage Current Unit 5.0 16 50 I COML Max 5.0 90 120 RON Match between Switches Off Com Leakage Current Typ 0.01 Logic "0" 2 AC ELECTRICAL CHARACTERISTICS T A = 25°C V+ = +5.0V, V- = -5.0V, GND = 0.0V unless otherwise specified 4211/4212/4213(PC) 4211/4212/4213(DC) 4211/4212/4213(SC) Min Typ Max Min Typ Max Min Typ Max Parameter Symbol Unit Test Conditions Turn On Delay time tON 60 130 60 130 60 130 ns (Note 2) Turn Off Delay time tOFF 60 130 60 130 60 130 ns (Note 2) Charge Injection QINJ 0.2 1.0 0.2 1.0 0.2 1.0 pC (Note 3) (Note 4) Off Isolation 75 75 75 dB At f = 100KHz, (Note 5) Crosstalk 90 90 90 dB At f = 100KHz, (Note 6) 0.05 0.01 0.05 0.01 0.05 0.01 % R L = 10K R L = 100K Total Harmonic Distortion THD Com/Out Off Capacitance COM(OFF) OUT (OFF) 3.0 3.0 3.0 pF Channel On Capacitance CDS (ON) 5.7 5.7 5.7 pF Pin to Pin Capacitance CPP 0.5 0.6 0.25 pF DC ELECTRICAL CHARACTERISTICS T A = 25°C V+ = +5.0V, V- = GND = 0.0V unless otherwise specified Parameter Symbol Analog Signal Range VA On - Resistance RON Change of On-Resistance from -V S to +VS ∆RON Change of On-Resistance with Temperature ∆RON/∆T 4211/4212/4213 (PC,SC) Min Typ Max 0.0 195 250 RON Match Between Switches Off Com Leakage Current +5.0 0.0 280 365 V 195 280 Ω 270 390 20 0.43 0.43 2 2 100 500 50 50 I OUTL 100 500 50 50 I D(ON) 100 500 50 % 100 100 100 4000 4.0 pA pA pA VCOM = 1 to 4V,VOUT = 4 to 1V pA pA pA VOUT = 1 to 4V,VCOM = 4 to 1V pA pA pA 4.0 VIH Input Low Voltage VIL 0.8 0.8 V Input High or Input Low Current I IH I IL 10 10 nA Supply Current I SUPPLY 1 µA 1 -40°C to +85°C -55°C to +125°C -40°C to +85°C -55°C to +125°C -40°C to +85°C -55°C to +125°C Logic "1" Input High Voltage 0.01 VA = 0V IA = 1mA -40°C to +85°C -55°C to +125°C %/°C 4000 On Channel Leakage Current Test Conditions % 4000 Off Out Leakage Current Unit +5.0 20 50 I COML 4211/4212/4213 (DC) Min Typ Max 0.01 Logic "0" Notes: 1. Voltage on any terminal must be less than (V+) + 0.3V and greater than (V-) - 0.3V, at all times including before power is applied and V+ =V- = 0.0V. Vsupply power supply needs to be sequenced on first on power turn-on and sequenced off last during power turn-off. 2. See Switching Time Test Circuit. Break-before-make time is not guaranteed. Turn on and turn off time may overlap. 3. Guaranteed by design. 4. See Charge Injection Test Circuit 5. See Off Isolation Test Circuit 6. See Crosstalk Test Circuit. 7. See switching time test circuit. ALD4211/ALD4212 ALD4213 Advanced Linear Devices 3 AC ELECTRICAL CHARACTERISTICS TA = 25°C V+ = +5.0V, V- = GND = 0.0V unless otherwise specified Parameter Turn On Delay time Turn Off Delay time Symbol 4211/4212/4213 (PC) 4211/4212/4213 (DC) 4211/4212/4213 (SC) Min Typ Max Min Typ Max Min Typ Max Unit Test Conditions tON 85 170 85 170 85 170 ns (Note 7) tOFF 46 90 46 90 46 90 ns (Note 7) Break-Before-Make Delay Time tBD Charge Injection QINJ 15 40 0.2 15 1.0 40 0.2 15 1.0 40 0.2 ns 1.0 pC (Note 3) (Note 4) Off Isolation 75 75 75 dB At f = 100KHz, (Note 5) Crosstalk 90 90 90 dB At f = 100KHz, (Note 6) 0.05 0.01 0.05 0.01 0.05 0.01 % R L = 10K R L = 100K Total Harmonic Distortion THD Com/Out Off Capacitance COM(OFF) OUT (OFF) 3.0 3.0 3.0 pF Channel On Capacitance CDS (ON) 5.7 5.7 5.7 pF Pin to Pin Capacitance CPP 0.5 0.6 0.25 pF The ALD4211/ALD4212/ALD4213 precision due to these factors: feature very high 1. The analog switch has ultra low capacitive charge coupling so that the charge stored on a 200pF sampling capacitor is minimally affected. 2. With special charge balancing and charge cancellation circuitry designed on chip, the ALD4211/ALD4212/ ALD4213 achieves ultra low charge injection of typically only 0.2pC resulting in extremely low signal distortion to the external circuit. The ALD4211/ALD4212/ALD4213 CMOS analog switches, when used with industry standard pinout connection, have the input and output pins reversed with the signal source input connected to OUT pins and COM pins used as output pins. In this connection and when used with 1,000pF or greater value capacitors, or when connected to a DC current or resistive load, the switch would not be operating in an ultra low charge injection mode. Typical charge injection, in this case, would be 5pC as the pin to pin capacitive coupling effect would dominate. In this connection, all the other characteristics of the ALD4211/ALD4212/ALD4213 CMOS analog switches remain the same. 3. The analog switch switching transistors have pA leakage currents minimizing the droop rate of the sampling circuit. 4. The internal switch timing allows for the analog switch to turn off internally without producing any residual transistor channel charge injection, which may affect external circuits. With a low loss polystyrene or polypropylene sampling capacitor, long data retention times are possible without significant signal loss. ALD4211/ALD4212 ALD4213 Advanced Linear Devices 4 DC ELECTRICAL CHARACTERISTICS TA = 25°C V+ = +3.0V, V- = GND = 0.0V unless otherwise specified 4211/4212/4213 (PC,SC) Parameter Symbol Analog Signal Range VA On - Resistance RON Change of On-Resistance from -VS to +VS ∆RON Change of On-Resistance with Temperature ∆RON/∆T Min Typ 0.0 500 620 Typ Max 0.0 700 880 Unit 3.0 V 500 700 Ω 680 1000 43 43 0.27 0.27 2 2 50 I COML 4211/4212/4213 (DC) Min 3.0 RON Match Between Switches Off Com Leakage Current Max 100 500 50 I OUTL %/°C % 50 100 500 100 50 100 4000 Channel On Leakage Current 50 I D(ON) 100 500 50 100 4000 2.4 VA = 0V IA = 1mA -40°C to +85°C -55°C to +125°C % 4000 Off Out Leakage Current Test Conditions pA pA pA -40°C to +85°C -55°C to +125°C pA pA pA -40°C to +85°C -55°C to +125°C pA pA pA -40°C to +85°C -55°C to +125°C VCOM = 1 to 2V,VOUT = 2 to 1V VOUT = 1 to 2V,VCOM = 2 to 1V 2.4 Logic "1" Input High Voltage VIH Input Low Voltage VIL 0.8 0.8 V Input High or Input Low Current I IH I IL 10 10 nA Supply Current I SUPPLY 1 µA 0.01 1 0.01 Logic "0" AC ELECTRICAL CHARACTERISTICS TA = 25°C V+ = +3.0V, V- = GND = 0.0V unless otherwise specified 4211/4212/4213 (PC) 4211/4212/4213 (DC) 4211/4212/4213 (SC) Parameter Symbol Min Typ Max Typ Max Typ Max Unit Test Conditions Turn On Delay time tON 160 300 160 300 160 300 ns (Note 7) Turn Off Delay time tOFF 78 1500 78 150 78 150 ns (Note 7) Break-Before-Make Delay Time tBD Charge Injection QINJ 20 82 0.2 Min 20 0.5 82 0.2 Min 20 0.5 82 0.2 ns 0.5 pC (Note 3) (Note 4) Off Isolation 75 75 75 dB At f = 100KHz, (Note 5) Crosstalk 90 90 90 dB At f = 100KHz, (Note 6) 0.05 0.01 0.05 0.01 0.05 0.01 % Total Harmonic Distortion THD Com/Out Off Capacitance COM(OFF) OUT (OFF) 3.0 3.0 3.0 pF Channel On Capacitance CDS (ON) 5.7 5.7 5.7 pF Pin to Pin Capacitance CPP 0.5 0.6 0.25 pF ALD4211/ALD4212 ALD4213 Advanced Linear Devices R L = 10K R L = 100K 5 TYPICAL PERFORMANCE CHARACTERISTICS ON RESISTANCE AS A FUNCTION OF SIGNAL VOLTAGE POWER DISSIPATION AS A FUNCTION OF FREQUENCY 240 ON - RESISTANCE (Ω) POWER DISSIPATION (mW) 1.0 VSUPPLY = 5V 0.8 0.6 0.4 0.2 200 VSUPPLY = 10V 160 125°C 120 85°C 25°C 80 -25°C -55°C 40 0 0 1 10 100 1000 0 10000 2 ON RESISTANCE AS A FUNCTION OF SIGNAL VOLTAGE 10 8 ON RESISTANCE AS A FUNCTION OF SIGNAL VOLTAGE 500 850 400 ON - RESISTANCE (Ω) ON - RESISTANCE (Ω) 6 SIGNAL VOLTAGE (V) FREQUENCY (KHz) VSUPPLY = 5V 300 125°C 85°C 25°C - 25°C - 55°C 200 100 0 VSUPPLY = 3V 700 550 125°C 400 85°C 25°C - 25°C - 55°C 250 100 0 1 2 3 5 4 0 1.2 0.6 SIGNAL VOLTAGE (V) 1.8 2.4 3.0 SIGNAL VOLTAGE (V) SWITCH DELAY TIME AS A FUNCTION OF SUPPLY VOLTAGE SWITCH DELAY TIME AS A FUNCTION OF SUPPLY VOLTAGE 250 200 SWITCH DELAY TIME (ns) 250 SWITCH DELAY TIME (ns) 4 ALD 4211 ALD4213, SW2, 3 150 100 TURN ON DELAY TIME 50 TURN OFF DELAY TIME 0 200 ALD4212 ALD4213 SW1, 4 150 100 TURN ON DELAY TIME 50 TURN OFF DELAY TIME 0 3 4 5 6 7 8 9 10 SUPPLY VOLTAGE (V) ALD4211/ALD4212 ALD4213 3 4 5 6 7 8 9 10 SUPPLY VOLTAGE (V) Advanced Linear Devices 6 TYPICAL PERFORMANCE CHARACTERISTICS SUPPLY CURRENT AS A FUNCTION OF INPUT VOLTAGE SUPPLY CURRENT AS A FUNCTION OF INPUT VOLTAGE 100 1.6 SUPPLY CURRENT (µA) SUPPLY CURRENT (mA) 2.0 VSUPPLY = 10V 1.2 0.8 0.4 0 80 VSUPPLY = 5V 60 40 20 0 0 6 4 2 8 10 0 INPUT VOLTAGE (V) TOTAL HARMONIC DISTORTION (%) SUPPLY CURRENT (µA) VSUPPLY = 3V 6 4 2 0 0.6 2.4 1.8 1.2 100 10 VSUPPLY = 5V VS = 0.355 VRMS RL = 10K 1 0.1 0.01 RL = 100K 0.001 3.0 1.0 0.1 INPUT VOLTAGE (V) 10 100 FREQUENCY (KHz) SWITCH DELAY TIME AS A FUNCTION OF TEMPERATURE CHARGE INJECTION AS A FUNCTION OF SOURCE RESISTANCE 250 3.0 NC: Normally Closed NO: Normally Open 200 150 VSUPPLY = 5V TURN ON DELAY TIME NC NO 100 NO NC 50 TURN OFF DELAY TIME 0 -75 -25 25 75 CHARGE INJECTION (PC) SWITCH DELAY TIME (ns) 5 4 TOTAL HARMONIC DISTORTION AS A FUNCTION OF FREQUENCY 10 0 3 INPUT VOLTAGE (V) SUPPLY CURRENT AS A FUNCTION OF INPUT VOLTAGE 8 2 1 2.5 2.0 1.0 0.5 CL = 200pF 0 100 TEMPERATURE (°C) ALD4211/ALD4212 ALD4213 CL = 1000pF 1.5. 0 10 20 30 40 50 SOURCE RESISTANCE (Ω) Advanced Linear Devices 7 TEST CIRCUITS CROSSTALK TEST CIRCUIT SWITCHING TIME TEST CIRCUIT 4211.STTC.E Vi = 1Vr ms 100kHz 50Ω V- V+ COM1 V+ V- V+ RL = 1KΩ OUT1 V- V+ VO VS = 3V CL = 15pF OUT2 COM2 V- COM1 OUT1 IN1 GND CL = 15pF RL = 1KΩ 4.5V 0V RL = 1KΩ CL = 35pF GND Logic Input 100kHz tr = tf ≤ 20ns CCRR = 20 log [ VO/Vi ] 50% 50% Logic Input VO 10% OFF ISOLATION TEST CIRCUIT V+ Vi = 1Vrms 100kHz 50Ω 90% V- V- V+ COM1 VO OUT1 RL = 1KΩ IN1 VO ton / toff CL = 15pF toff / ton GND QIRR = 20 log (VO/Vi) CHARGE INJECTION TEST CIRCUIT 4211.CITC.EP V+ V- V+ COM1 VOUT1 IN1 GND TOTAL HARMONIC DISTORTION TEST CIRCUIT VO CL = 200pF 4211.THDTC.EPS.W V+ 4.5V 0.5V Logic Input 100kHz Vi = 1Vpp 100kHz COM1 50Ω Logic Input VO V- V+ V- OUT1 VO RL = 1KΩ IN1 GND ∆VO ALD4211/ALD4212 ALD4213 ∆Q = CL∆VO Advanced Linear Devices CL = 15pF 8