AMMP-6333 18 – 33 GHz, 0.2 W Driver Amplifier in SMT Package Data Sheet Description Features The AMMP-6333 is a broadband 0.2 W driver amplifier designed for use in transmitters operating in various frequency bands from 18 GHz to 33 GHz. This small, easy to use device provides over 23 dBm of output power (P-1dB) and more than 20 dB of gain at 25 GHz. It was optimized for linear operation with an output power at the third order intercept point (OIP3) of 30dBm. The AMMP-6333 features a temperature compensated RF power detection circuit that enables power detection sensitivity of 0.3 V/W at 25GHz. It is fabricated using Avago Technologies unique 0.25μm E-mode PHEMT technology which eliminates the need for negative gate biasing voltage. • Frequency range: 18 to 33 GHz Package Diagram • Small signal gain: 20 dB • P-1dB : 23dBm • Return Loss (In/Out): -10 dB Applications • Microwave Radio systems • Satellite VSAT, Up/Down Link • LMDS & Pt-Pt mmW Long Haul • Broadband Wireless Access (including 802.16 and 802.20 WiMax) • WLL and MMDS loops Vg Vd DET_O 1 2 3 Functional Block Diagram 1 RF IN 8 4 2 3 RF OUT 8 7 6 5 NC Vd DET_R 4 7 6 5 Pin Function 1 2 3 4 5 6 7 8 Vg Vd DET_O RF_out DET_R Vd NC RF_in Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) = 90 V ESD Human Body Model (Class 1A) = 300 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Note: MSL Rating = Level 2A Electrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C. 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6220 published specifications. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt) matching. 5. All tested parameters guaranteed with measurement accuracy +/- 2dB for P1dB of 17,25 and 32GHz +/- 0.5 for Gain of 17GHz, +/- 1 dB for Gain of 25 and 32GHz Table 1. RF Electrical Characteristics TA=25°C, Vd=3.0V, Id(Q)=230mA, Zin=Zo=50 Ω 17-20GHz Parameter Min Small Signal Gain, Gain 14 16 19 Output Power at 1dBGain Compression, P1dB 18 20.5 22 Output Power at 3dBGain Compression, P3dB Typ 20-30GHz Max Min Typ 30-33GHz Max Min Typ Max Unit 22 18 20.5 24.5 21 24 dBm Comment dB 21.5 24.5 23.5 dBm Output Third Order Intercept Point, OIP3 30 30 30 dBm Reverse Isolation, Iso 45 45 45 dB Input Return Loss, Rlin 10 10 8 dB Output Return Loss, RLout 10 14 10 dB Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25°C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data. Description Min. Typical Max. Unit Comments Drain Supply Current, Id 230 mA Vd=5 V, Vg set for typical IdQ – quiescent current Gate Supply Operating Voltage, Vg 2 V IdQ = 230 mA Gate Supply Current, Ig 7 mA 2 Table 3. Thermal Properties Parameter Test Conditions Value Maximum Power Dissipation Tbaseplate = 85°C PD = 2.5W Tchannel = 150°C Thermal Resistance, qjc Vd = 5V Id = 230mA PD = 1.15W Tbaseplate = 85°C qjc = 27 °C/W Tchannel = 116°C Thermal Resistance, qjc Under RF Drive Vd = 5V Id = 400mA Pout = 24dBm PD = 2W Tbaseplate = 85°C qjc = 27 °C/W Tchannel = 139°C Absolute Minimum and Maximum Ratings Table 4. Minimum and Maximum Ratings Description Max. Unit Drain to Gate Voltage, Vd-Vg 14 V Positive Supply Voltage, Vd 5.5 V Gate Supply Voltage, Vg 0 to 2.5 V Power Dissipation, PD 2.5 W CW Input Power, Pin 20 dBm Channel Temperature, Tch +150 °C +155 °C 320 °C Storage Temperature, Tstg Maximum Assembly Temperature, Tmax Min. -65 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 3 Comments 30 second maximum Typical Performance (TA = 25°C, Vd =5 V, IdQ = 230 mA, Zin = Zout = 50 Ω) (Data obtained from a test fixture with 2.4 mm connectors. Effects of the test fixture – losses and mismatch – have not been removed from the data) 40 0 0 S21[dB] S12[dB] 30 -40 15 10 S12 [dB] S21[dB] 25 20 S11[dB] S22[dB] -5 -20 Return Loss [dB] 35 -10 -60 -15 -80 -20 5 0 10 15 20 25 30 Frequency [GHz] 35 40 10 20 25 30 Frequency [GHz] 30 20 P-1 PAE 40 SCL=20[dBm] SCL=10dBm] SCL=5[dBm] 10 0 IMD3 Level [dBc] 25 35 Figure 2. Return Loss vs Frequency Figure 1. Gain and Reverse Isolation vs Frequency P-1 [dBm], PAE [%] 15 20 15 -10 -20 -30 -40 -50 -60 10 18 20 22 24 26 Frequency [GHz] 28 30 32 -70 34 Figure 3. P-1dB and PAE vs Frequency 21 23 25 27 Frequency [GHz] 29 31 33 35 Pout(dBm) PAE[%] Id(total) 25 Po[dBm], and, PAE[%] Noise Figure [dB] 19 400 30 8 6 4 2 20 300 15 10 5 16 18 20 22 24 26 Frequency [GHz] Figure 5. Typical Noise Figure vs Frequency 4 17 Figure 4. Typical IMD3 vs Frequency (SCL = Single Carrier level) 10 0 15 Ids [mA] 16 28 30 32 34 0 -25 -20 -15 -10 -5 Pin [dBm] 0 5 200 Figure 6. Output Power, PAE, and Drain Current vs Input Power at 30GHz Typical Performance (continued) (TA = 25°C, Zin = Zout = 50 Ω) (Data obtained from a test fixture with 2.4 mm connectors. Effects of the test fixture – losses and mismatch – have not been removed from the data) 24 27 22 25 20 Gain [dB] P-1[dBm 23 21 19 15 15 17 19 21 23 25 27 Frequency[GHz] 29 31 33 8 35 27 27 25 25 15 17 19 21 23 25 27 Frequency[GHz] 29 31 33 35 33 35 23 P1 [dBm] 21 19 17 Gain[Vds=3V] Gain[Vds=4V] Gain[Vds=5V] 15 13 Gain[@180mA] Gain[@230mA] Gain[@280mA] Figure 8. Small signal gain vs Frequency and IdQ, (Vds=5V) 23 Gain[dB] 14 10 Figure 7. P-1dB vs Frequency and Vds, (IdQ=230mA) 15 17 19 21 23 25 27 Frequency[GHz] 29 21 19 P-1[@180mA] P-1[@230mA] P-1[@280mA] 17 31 Figure 9. Small signal gain vs Frequency and Vds, (IdQ=230mA) 5 16 12 P-1[Vds=3V] P-1[Vds=4V] P-1[Vds=5V] 17 18 33 35 15 15 17 19 21 23 25 27 Frequency[GHz] Figure 10. P-1dB vs Frequency and IdQ, (Vds=5V) 29 31 Typical Performance (continued) (Vd =5 V, IdQ = 230 mA, Zin = Zout = 50 Ω) (Data obtained from a test fixture with 2.4 mm connectors. Effects of the test fixture – losses and mismatch – have not been removed from the data) 0 0 S11_25 S11_-40 S11_85 -5 S22[dB] S11[dB] -5 -10 -15 15 17 19 21 23 25 27 Frequency [GHz] 29 31 33 30 27 25 25 20 23 15 S21_25 S21_-40 S21_85 10 15 17 19 21 23 25 27 Frequency [GHz] Figure 13. |S21| vs Frequency and Temperature 15 17 19 21 23 25 27 29 Frequency [GHz] 31 33 35 31 33 35 Figure 12. |S22| vs Frequency and Temperature P-1 [dBm] S21[dB] -20 35 Figure 11. |S11| vs Frequency and Temperature 6 -10 -15 -20 5 S22_25 S22_-40 S22_85 21 P-1_85deg P-1_25deg P-1_-40deg 19 29 31 33 35 17 15 17 19 21 23 25 27 29 Frequency [GHz] Figure 14. P-1dB vs Frequency and Temperature Biasing Considerations The AMMP-6333 is a balanced amplifier consisting of two four stage single-ended amplifiers, two Lange couplers, a power monitoring detector, a reference detector for temperature compensation, and a current mirror for the gate biasing (Figure 15). The recommended quiescent DC bias conditions for optimum gain, output power, efficiency, and reliability are: Vd = 5 V with Vg set for IdQ = 230 mA. The drain bias voltage range is from 3 to 5 V. Drain current range is from 200 mA to 350 mA. The AMMC-6333 can be biased with a dual or single positive DC source (Figure 16). The output power detection network provides a way to monitor output power. The differential voltage between the DET_R and DET_O outputs can be correlated with the RF power emerging from the RF output port. This voltage is given by: V = (VDET_R – VDET_O) – VOFS Where: VDET_R is the voltage at the DET_R port VDET_O is a voltage at the DET_O port VOFS is the offset voltage at zero input power The offset voltage (VOFS) can be at each power level by turning off the input power and measuring V. The error due to temperature drift should be less than 0.01dB/50°C. When VOFS is determined at a single reference temperature the drift error should be less than 0.25dB. Finally, VOFS be characterized over a range of temperatures and stored in a lookup table, or it can be measured at two temperatures and a linear fit used to calculate VOFS at any temperature. The RF ports are AC coupled at the RF input to the first stage and the RF output of the final stage. No ground wires are needed since ground connections are made with plated through-holes to the backside of the device. Vg Vd DET_O RFout RFin Four stage wideband amplifier Vd DET_R Figure 15. AMMC-6333 schematic 7 1. Dual positive DC power supply 2V 100 pF 1µF 2. Single positive DC power supply 100 pF 100 p 1µF 400 DET_O 1 RF Input 2 1 3 8 RF Output 4 7 6 RF Input 2 3 4 7 5 DET_O 8 6 RF Output 5 DET_R DET_R 100 pF 1 F 100 pF 5V 5V Note: 1. Vdd may be applied to either Pin 2 or Pin 6. Figure 16. AMMP-6333 assembly examples, Vd pins must be biased from both sides 1 0.30 0.1 0.20 0.15 0.01 0.10 Det_R - Det_O [V] Det_R - Det_O [V] 0.25 0.05 0 0.001 5 10 15 Pout[dBm] 20 25 Figure 17. AMMP-6333 Typical Detector Voltage and Output Power, Freq=30GHz 8 Typical Scattering Parameters Please refer to <http://www.avagotech.com> for typical scattering parameters data. Package Dimension, PCB Layout and Tape and Reel information Please refer to Avago Technologies Application Note 5520, AMxP-xxxx production Assembly Process (Land Pattern A). Ordering Information Part Number Devices Per Container Container AMMP-6333-BLKG 10 Antistatic bag AMMP-6333-TR1G 100 7” Reel AMMP-6333-TR2G 500 7” Reel For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. AV02-1447EN - July 9, 2013