AN8000/AN8000M Series 3-pin Positive Output Low Dropout Voltage Regulator (50mA Type) ■ Overview Unit:mm AN8000 Series 5.0±0.2 13.5±0.5 5.1±0.2 The AN8000 series is 3-pin low-dropout fixed positive output monolithic voltage regulators. Since thier power consumption can be minimized, they are suitable for battery stabilizing power supply and reference voltage. Thirteen types of output voltage are available ; 2V, 2.5V, 3V, 3.5V (TO-92 only) , 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V. 4.0±0.2 + 0.2 0.45 – 0.1 2.54 2.3±0.2 ■ Features 1 : Input 2 : Output 3 : GND 2 3 1 • Input/output voltage difference : 0.3V (max.) • Output current of up to 50mA • Low bias current ; 0.6mA (typ.) • Output voltage ; 2V, 2.5V, 3V, 3.5V (TO-92 only) , 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V. • Over-voltage protective circuit built-in. (Bottom View) TO-92 Plastic Package (SSIP003-P-0000) Unit:mm AN8000M Series 4.6max. 1.8max. 2.6max. 0.58max. 1.5 0.8min. 45˚ 2.6 0.48max. 4.25max. 1.6max. 0.44max. 3.0 1 : Output 2 : GND 3 : Input 1 2 3 3-pin Mini Power type Plastic Package (TO-243) (HSIP003-P-0000B) ■ Block Diagram Starter Voltage Reference + Error Amp. – R2 R1 Current Limiter 1 3 3 2 – 2 + VI 1 VO COUT : TO-92 : TO-243 R1=5kΩ CIN=0.33µF COUT=10µF ■ Absolute Maximum Ratings (Ta=25˚C) Symbol Rating Supply voltage Parameter VI 20 Supply current ICC Power dissipation PD 100 650 * Operating ambient temperature Topr –30 to+80 Storage temperature AN8000 Series V mA mW ˚C –55 to+150 Tstg AN8000M Series Unit ˚C –55 to+125 * Mounting onto the PCB (20 × 20 × 1.7mm glass epoxy copper foil 1 cm2 or more), for AN8000M Series. ■ Electrical Characteristics (Ta=25˚C) · AN8002/AN8002M (2V Type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum I/O voltage difference VDIF (min.) Condition Tj=25˚C min typ max Unit 2 2.08 V 2 40 mV IO=1 to 40mA, Tj=25˚C 7 20 mV IO=1 to 50mA, Tj=25˚C 10 25 mV VI=1.9V, IO=20mA, Tj=25˚C 0.06 0.2 V VI=1.9V, IO=50mA, Tj=25˚C 0.12 0.3 V 0.6 1 mA 1.92 VI=2.5 to 8V, Tj=25˚C Bias current Ibias IO=0mA, Tj=25˚C Ripple rejection ratio RR VI=3 to 5V, f=120Hz Vno f=10Hz to 100kHz 60 µV ∆VO/Ta Tj=–30 to+125˚C 0.1 mV/˚C Output noise voltage Output voltage temperature coefficient 62 74 dB Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=3V, IO=20mA, CO=10µF · AN8025/AN8025M (2.5V Type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum I/O voltage difference VDIF (min.) Condition Tj=25˚C max Unit 2.5 2.6 V 50 mV IO=1 to 40mA, Tj=25˚C 8 20 mV IO=1 to 50mA, Tj=25˚C 12.5 25 mV VI=2.4V, IO=20mA, Tj=25˚C 0.07 0.2 V VI=2.4V, IO=50mA, Tj=25˚C 0.12 0.3 V 0.6 1 mA Ibias IO=0mA, Tj=25˚C Ripple rejection ratio RR VI=3.5 to 5.5V, f=120Hz Vno f=10Hz to 100kHz ∆VO/Ta Tj=–30 to+125˚C Output voltage temperature coefficient typ 2.5 2.4 VI=3 to 8.5V, Tj=25˚C Bias current Output noise voltage min 60 72 dB 65 µV 0.13 mV/˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=3.5V, IO=20mA, CO=10µF ■ Electrical Characteristics (Ta=25˚C) · AN8003/AN8003M (3V Type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum I/O voltage difference Bias current VDIF (min.) Ibias Condition Tj=25˚C typ max Unit 3 3.12 V VI=3.5 to 9V, Tj=25˚C 3 50 mV IO=1 to 40mA, Tj=25˚C 9 25 mV 2.88 15 30 mV VI=2.9V, IO=20mA, Tj=25˚C 0.07 0.2 V VI=2.9V, IO=50mA, Tj=25˚C 0.12 0.3 V 0.6 1 mA IO=1 to 50mA, Tj=25˚C IO=0mA, Tj=25˚C Ripple rejection ratio RR VI=4 to 6V, f=120Hz Output noise voltage Vno f=10Hz to 100kHz ∆VO/Ta Tj=–30 to+125˚C Output voltage temperature coefficient min 58 70 dB 70 µV 0.15 mV/˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=4V, IO=20mA, CO=10µF · AN8035/AN8035M (3.5V Type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum I/O voltage difference Bias current VDIF (min.) Ibias Condition Tj=25˚C min typ max Unit 3.5 3.64 V VI=4 to 9.5V, Tj=25˚C 3.5 50 mV IO=1 to 40mA, Tj=25˚C 10 30 mV 3.36 20 40 mV VI=3.4V, IO=20mA, Tj=25˚C 0.07 0.2 V VI=3.4V, IO=50mA, Tj=25˚C 0.12 0.3 V 0.6 1 mA IO=1 to 50mA, Tj=25˚C IO=0mA, Tj=25˚C Ripple rejection ratio RR VI=4.5 to 6.5V, f=120Hz 69 dB Output noise voltage Vno f=10Hz to 100kHz 75 µV ∆VO/Ta Tj=–30 to+125˚C 0.2 mV/˚C Output voltage temperature coefficient 57 Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=4.5V, IO=20mA, CO=10µF · AN8004/AN8004M (4V Type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation Minimum I/O voltage difference Bias current REGL VDIF (min.) Ibias Condition Tj=25˚C min typ max Unit 4 4.16 V VI=4.5 to 10V, Tj=25˚C 3.5 50 mV IO=1 to 40mA, Tj=25˚C 10 30 mV IO=1 to 50mA, Tj=25˚C 20 40 mV VI=3.8V, IO=20mA, Tj=25˚C 0.07 0.2 V VI=3.8V, IO=50mA, Tj=25˚C 0.12 0.3 V 0.6 1 mA 3.84 IO=0mA, Tj=25˚C Ripple rejection ratio RR VI=5 to 7V, f=120Hz 67 dB Output noise voltage Vno f=10Hz to 100kHz 80 µV ∆VO/Ta Tj=–30 to+125˚C 0.2 mV/˚C Output voltage temperature coefficient 56 Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=5V, IO=20mA, CO=10µF ■ Electrical Characteristics (Ta=25˚C) · AN8045/AN8045M (4.5V Type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum I/O voltage difference Bias current VDIF (min.) Ibias Condition Tj=25˚C typ max Unit 4.5 4.68 V VI=5 to 10.5V, Tj=25˚C 4 50 mV IO=1 to 40mA, Tj=25˚C 11 35 mV 4.32 23 45 mV VI=4.3V, IO=20mA, Tj=25˚C 0.07 0.2 V VI=4.3V, IO=50mA, Tj=25˚C 0.12 0.3 V 0.7 1 mA IO=1 to 50mA, Tj=25˚C IO=0mA, Tj=25˚C Ripple rejection ratio RR VI=5.5 to 7.5V, f=120Hz Output noise voltage Vno f=10Hz to 100kHz ∆VO/Ta Tj=–30 to+125˚C Output voltage temperature coefficient min 54 66 dB 85 µV 0.23 mV/˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=5.5V, IO=20mA, CO=10µF · AN8005/AN8005M (5V Type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum I/O voltage difference Bias current VDIF (min.) Ibias Condition Tj=25˚C typ max Unit 5 5.2 V VI=5.5 to 11V, Tj=25˚C 4.5 50 mV IO=1 to 40mA, Tj=25˚C 12 40 mV IO=1 to 50mA, Tj=25˚C 25 50 mV VI=4.8V, IO=20mA, Tj=25˚C 0.07 0.2 V VI=4.8V, IO=50mA, Tj=25˚C 0.12 0.3 V 0.7 1 mA 4.8 IO=0mA, Tj=25˚C Ripple rejection ratio RR VI=6 to 8V, f=120Hz Output noise voltage Vno f=10Hz to 100kHz ∆VO/Ta Tj=–30 to+125˚C Output voltage temperature coefficient min 52 64 dB 95 µV 0.25 mV/˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=6V, IO=20mA, CO=10µF · AN8006/AN8006M (6V Type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation Minimum I/O voltage difference REGL VDIF (min.) Condition Tj=25˚C typ max Unit 6 6.24 V VI=6.5 to 12V, Tj=25˚C 5.5 60 mV IO=1 to 40mA, Tj=25˚C 13 45 mV IO=1 to 50mA, Tj=25˚C 28 55 mV VI=5.8V, IO=20mA, Tj=25˚C 0.07 0.2 V VI=5.8V, IO=50mA, Tj=25˚C 0.13 0.3 V 0.7 1.2 mA Bias current Ibias IO=0mA, Tj=25˚C Ripple rejection ratio RR VI=7 to 9V, f=120Hz Output noise voltage Vno ∆VO/Ta Output voltage temperature coefficient min 5.76 63 dB f=10Hz to 100kHz 105 µV Tj=–30 to+125˚C 0.3 mV/˚C 51 Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=7V, IO=20mA, CO=10µF ■ Electrical Characteristics (Ta=25˚C) · AN8007/AN8007M (7V Type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum I/O voltage difference Bias current VDIF (min.) Ibias Condition Tj=25˚C min typ max Unit 7 7.28 V VI=7.5 to 13V, Tj=25˚C 6.5 70 mV IO=1 to 40mA, Tj=25˚C 14 50 mV 6.72 31 60 mV VI=6.8V, IO=20mA, Tj=25˚C 0.07 0.2 V VI=6.8V, IO=50mA, Tj=25˚C 0.13 0.3 V 0.7 1.3 mA IO=1 to 50mA, Tj=25˚C IO=0mA, Tj=25˚C Ripple rejection ratio RR VI=8 to 10V, f=120Hz 62 dB Output noise voltage Vno f=10Hz to 100kHz 120 µV ∆VO/Ta Tj=–30 to+125˚C 0.35 mV/˚C Output voltage temperature coefficient 50 Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=8V, IO=20mA, CO=10µF · AN8008/AN8008M (8V Type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum I/O voltage difference Bias current VDIF (min.) Ibias Condition Tj=25˚C min typ max Unit 8 8.32 V VI=8.5 to 14V, Tj=25˚C 7.5 80 mV IO=1 to 40mA, Tj=25˚C 15 55 mV 7.68 34 65 mV VI=7.8V, IO=20mA, Tj=25˚C 0.07 0.2 V VI=7.8V, IO=50mA, Tj=25˚C 0.14 0.3 V 0.7 1.3 mA IO=1 to 50mA, Tj=25˚C IO=0mA, Tj=25˚C Ripple rejection ratio RR VI=9 to 11V, f=120Hz 61 dB Output noise voltage Vno f=10Hz to 100kHz 135 µV ∆VO/Ta Tj=–30 to+125˚C 0.4 mV/˚C Output voltage temperature coefficient 49 Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=9V, IO=20mA, CO=10µF · AN8085/AN8085M (8.5V Type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum I/O voltage difference Bias current VDIF (min.) Ibias Condition min typ 8.16 8.50 8.84 V VI=9 to 14.5V, Tj=25˚C 8.3 90 mV IO=1 to 40mA, Tj=25˚C 16 60 mV Tj=25˚C max Unit 36 70 mV VI=8.3V, IO=20mA, Tj=25˚C 0.07 0.2 V VI=8.3V, IO=50mA, Tj=25˚C 0.14 0.3 V 0.8 1.4 mA IO=1 to 50mA, Tj=25˚C IO=0mA, Tj=25˚C Ripple rejection ratio RR VI=9.5 to 11.5V, f=120Hz 60 dB Output noise voltage Vno f=10Hz to 100kHz 140 µV ∆VO/Ta Tj=–30 to+125˚C 0.43 mV/˚C Output voltage temperature coefficient 48 Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=9.5V, IO=20mA, CO=10µF ■ Electrical Characteristics (Ta=25˚C) · AN8009/AN8009M (9V Type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum I/O voltage difference VDIF (min.) Bias current Ibias Condition min Tj=25˚C typ max Unit 9 9.36 V VI=9.5 to 15V, Tj=25˚C 9 100 mV IO=1 to 40mA, Tj=25˚C 17 70 mV 8.64 37 75 mV VI=8.8V, IO=20mA, Tj=25˚C 0.07 0.2 V VI=8.8V, IO=50mA, Tj=25˚C 0.14 0.3 V 0.8 1.4 mA IO=1 to 50mA, Tj=25˚C IO=0mA, Tj=25˚C Ripple rejection ratio RR VI=10 to 12V, f=120Hz 59 dB Output noise voltage Vno f=10Hz to 100kHz 150 µV ∆VO/Ta Tj=–30 to+125˚C 0.45 mV/˚C Output voltage temperature coefficient 47 Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=10V, IO=20mA, CO=10µF · AN8010/AN8010M (10V Type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum I/O voltage difference VDIF (min.) Bias current Ibias Condition min Tj=25˚C typ max Unit 10 10.4 V VI=10.5 to 16V, Tj=25˚C 10 100 mV IO=1 to 40mA, Tj=25˚C 18 75 mV IO=1 to 50mA, Tj=25˚C 40 85 mV VI=9.8V, IO=20mA, Tj=25˚C 0.07 0.2 V VI=9.8V, IO=50mA, Tj=25˚C 0.14 0.3 V 0.8 1.4 mA 9.6 IO=0mA, Tj=25˚C Ripple rejection ratio RR VI=11 to 13V, f=120Hz 58 dB Output noise voltage Vno f=10Hz to 100kHz 165 µV ∆VO/Ta Tj=–30 to+125˚C 0.5 mV/˚C Output voltage temperature coefficient 46 Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=11V, IO=20mA, CO=10µF ■ Application Circuit Vout Vin AN8000 AN8000M + 0.33µF 10µF – The AN8000/AN8000M series has IC internal gain increased in order to improve performance. When the power line on the output side is long, use a capacitor of 10µF. For the capacitor on the output side, attach it as close to the IC as possible. When using at a low temperature, it is recommended to use the capacitors with low internal impedance (for example, tantalum capacitor) for output capacitors. ■ Characteristic Curve PD –Ta (AN8000 Series) PD –Ta (AN8000M Series) 800 Power Dissipation PD (mW) Power Dissipation PD (mW) 800 700 600 500 400 300 200 100 0 700 ( 600 400 300 200 100 20 40 60 80 100 120 140 160 0 20 40 Ambient Temperature Ta (˚C) 60 80 100 120 140 160 Ambient Temperature Ta (˚C) RR– f VO –VI 12 AN8005 80 Output Voltage VO (V) Ripple Rejection Ratio RR (dB) ) 500 0 0 70 60 50 40 CO=10µF IO=0mA 10 AN8010/M 8 6 AN8005/M 4 AN8002/M 2 30 0 50 100 300 500 1k 3k 5k 10k 30k 50k 100k 0 5 10 Frequency f (Hz) VO – IO 20 VO –Ta 5.3 Output Voltage VO (V) AN8005 VI=6V CO=10µF 5.2 5.1 5.0 4.9 4.8 4.7 15 Input Voltage VI (V) 5.3 Output Voltage VO (V) Mounting onto PCB 20 × 20 × 7mm Glass Epoxy PCB, Copper foil 1cm2 or more 0 10 20 30 40 50 60 70 Output Current VO (mA) 80 90 100 AN8005 VI=6V CO=10µF IO=0mA 5.2 5.1 5.0 4.9 4.8 4.7 –40 –20 0 20 40 60 80 100 120 Ambient Temperature Ta (˚C) 140 160