Voltage Regulators AN80xx/AN80xxM Series 3-pin, positive output, low dropout voltage regulator (50 mA type) ■ Overview AN80xx series Unit: mm (1.0) 4.0±0.2 5.1±0.2 5.0±0.2 The AN80xx series and the AN80xxM series are 3pin, low dropout, fixed positive output type monolithic voltage regulators. Since their power consumption can be minimized, they are suitable for battery-used power supply and reference voltage. 13 types of output voltage are available; 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000 only), 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V. (1.0) 2.3±0.2 13.5±0.5 0.6±0.15 ■ Features • Input/output voltage difference: 0.3V max. • Output current of up to 50mA • Low bias current: 0.6mA typ. • Output voltage: 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000 only), 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V • Built-in overcurrent protection circuit 0.43+0.1 –0.05 0.43+0.1 –0.05 2.54 1: Input 2: Output 3: GND 2 3 1 SSIP003-P-0000 AN80xxM series Unit: mm 1.6 max. 4.6 max. 0.58 max. 0.48 max. 1.5 1.5 4.25 max. 0.8 min. 2.6 max. 2.6 typ. 1.8 max. 0.44 max. 3.0 3 2 1 1: Output 2: GND 3: Input HSIP003-P-0000B Note) The packages (SSIP003-P-0000 and HSIP003P-0000B) of this product will be changed to lead-free type (SSIP003-P-0000S and HSIP003-P-0000Q). See the new package dimensions section later of this datasheet. ■ Block Diagram (AN80xxM series) Starter Voltage Reference + Error Amp. − R2 R1 Current Limiter 3 VI 2 (1) (3) CIN 1 − + (2) VO R1 = 5kΩ CIN = 0.33µF COUT = 10µF COUT Note) The number in ( ) shows the pin number for the AN80xx series. Publication date: December 2001 SFF00007CEB 1 AN80xx/AN80xxM Series ■ Absolute Maximum Ratings at Ta = 25°C Symbol Rating Supply voltage Parameter VI 20 Supply current ICC Power dissipation PD 100 650 * Operating ambient temperature Topr −30 to +80 Storage temperature * AN80xx series V mA mW °C −55 to +150 Tstg AN80xxM series Unit °C −55 to +125 AN80xxM series is mounted on standard board (glass epoxy: 20mm × 20mm × t1.7mm with Cu foil of 1cm2 or more). ■ Electrical Characteristics at Ta = 25°C • AN8002, AN8002M (2V type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum input/output voltage difference VDIF(min) Conditions Tj = 25°C 1.92 Typ Max Unit 2 2.08 V 2 40 mV IO = 1 to 40mA, Tj = 25°C 7 20 mV IO = 1 to 50mA, Tj = 25°C 10 25 mV VI = 1.9V, IO = 20mA, Tj = 25°C 0.06 0.2 V VI = 1.9V, IO = 50mA, Tj = 25°C 0.12 0.3 V 0.6 1 mA VI = 2.5 to 8V, Tj = 25°C Bias current IBias IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 3 to 5V, f = 120Hz Output noise voltage Vno ∆VO/Ta Output voltage temperature coefficient Min 62 74 dB f = 10Hz to 100kHz 60 µV Tj = −30 to +125°C 0.1 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 3V, IO = 20mA and CO = 10µF. • AN8025, AN8025M (2.5V type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum input/output voltage difference Bias current VDIF(min) IBias Conditions Tj = 25°C Min Typ Max 2.4 2.5 2.6 V 2.5 50 mV VI = 3 to 8.5V, Tj = 25°C Unit IO = 1 to 40mA, Tj = 25°C 8 20 mV IO = 1 to 50mA, Tj = 25°C 12.5 25 mV VI = 2.4V, IO = 20mA, Tj = 25°C 0.07 0.2 V VI = 2.4V, IO = 50mA, Tj = 25°C 0.12 0.3 V 0.6 1 mA IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 3.5 to 5.5V, f = 120Hz 72 dB Output noise voltage Vno f = 10Hz to 100kHz 65 µV ∆VO/Ta Tj = −30 to +125°C 0.13 mV/°C Output voltage temperature coefficient 60 Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 3.5V, IO = 20mA and CO = 10µF. 2 SFF00007CEB AN80xx/AN80xxM Series ■ Electrical Characteristics at Ta = 25°C (continued) • AN8003, AN8003M (3V type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum input/output voltage difference VDIF(min) Conditions Tj = 25°C Unit Min Typ Max 2.88 3 3.12 V 3 50 mV VI = 3.5 to 9V, Tj = 25°C IO = 1 to 40mA, Tj = 25°C 9 25 mV IO = 1 to 50mA, Tj = 25°C 15 30 mV VI = 2.9V, IO = 20mA, Tj = 25°C 0.07 0.2 V VI = 2.9V, IO = 50mA, Tj = 25°C 0.12 0.3 V 0.6 1 mA Bias current IBias IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 4 to 6V, f = 120Hz Vno f = 10Hz to 100kHz 70 µV ∆VO/Ta Tj = −30 to +125°C 0.15 mV/°C Output noise voltage Output voltage temperature coefficient 58 70 dB Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 4V, IO = 20mA and CO = 10µF. • AN8035(3.5V type) yp Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum input/output voltage difference Bias current VDIF(min) IBias Conditions Unit Min Typ Max 3.36 3.5 3.64 V VI = 4 to 9.5V, Tj = 25°C 3.5 50 mV IO = 1 to 40mA, Tj = 25°C 10 30 mV Tj = 25°C IO = 1 to 50mA, Tj = 25°C 20 40 mV VI = 3.4V, IO = 20mA, Tj = 25°C 0.07 0.2 V VI = 3.4V, IO = 50mA, Tj = 25°C 0.12 0.3 V 0.6 1 mA IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 4.5 to 6.5V, f = 120Hz 69 dB Output noise voltage Vno f = 10Hz to 100kHz 75 µV ∆VO/Ta Tj = −30 to +125°C 0.2 mV/°C Output voltage temperature coefficient 57 Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 4.5V, IO = 20mA and CO = 10µF. • AN8004, AN8004M (4V type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum input/output voltage difference VDIF(min) Conditions Typ Max 4 4.16 V VI = 4.5 to 10V, Tj = 25°C 3.5 50 mV IO = 1 to 40mA, Tj = 25°C 10 30 mV IO = 1 to 50mA, Tj = 25°C 20 40 mV VI = 3.8V, IO = 20mA, Tj = 25°C 0.07 0.2 V VI = 3.8V, IO = 50mA, Tj = 25°C 0.12 0.3 V 0.6 1 mA Bias current IBias IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 5 to 7V, f = 120Hz Output noise voltage Vno ∆VO/Ta Output voltage temperature coefficient Unit Min 3.84 Tj = 25°C 67 dB f = 10Hz to 100kHz 80 µV Tj = −30 to +125°C 0.2 mV/°C 56 Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 5V, IO = 20mA and CO = 10µF. SFF00007CEB 3 AN80xx/AN80xxM Series ■ Electrical Characteristics at Ta = 25°C (continued) • AN8045, AN8045M (4.5V type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum input/output voltage difference VDIF(min) Conditions Tj = 25°C Min Typ Max 4.32 Unit 4.5 4.68 V VI = 5 to 10.5V, Tj = 25°C 4 50 mV IO = 1 to 40mA, Tj = 25°C 11 35 mV IO = 1 to 50mA, Tj = 25°C 23 45 mV VI = 4.3V, IO = 20mA, Tj = 25°C 0.07 0.2 V VI = 4.3V, IO = 50mA, Tj = 25°C 0.12 0.3 V 0.7 1 mA Bias current IBias IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 5.5 to 7.5V, f = 120Hz Vno f = 10Hz to 100kHz 85 µV ∆VO/Ta Tj = −30 to +125°C 0.23 mV/°C Output noise voltage Output voltage temperature coefficient 54 66 dB Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 5.5V, IO = 20mA and CO = 10µF. • AN8005, AN8005M (5V type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum input/output voltage difference Bias current VDIF(min) IBias Conditions Unit Min Typ Max 4.8 5 5.2 V VI = 5.5 to 11V, Tj = 25°C 4.5 50 mV IO = 1 to 40mA, Tj = 25°C 12 40 mV Tj = 25°C IO = 1 to 50mA, Tj = 25°C 25 50 mV VI = 4.8V, IO = 20mA, Tj = 25°C 0.07 0.2 V VI = 4.8V, IO = 50mA, Tj = 25°C 0.12 0.3 V 0.7 1 mA IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 6 to 8V, f = 120Hz 64 dB Output noise voltage Vno f = 10Hz to 100kHz 95 µV ∆VO/Ta Tj = −30 to +125°C 0.25 mV/°C Output voltage temperature coefficient 52 Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 6V, IO = 20mA and CO = 10µF. • AN8006, AN8006M (6V type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum input/output voltage difference Bias current VDIF(min) IBias Conditions Tj = 25°C Min 5.76 Typ Max Unit 6 6.24 V VI = 6.5 to 12V, Tj = 25°C 5.5 60 mV IO = 1 to 40mA, Tj = 25°C 13 45 mV IO = 1 to 50mA, Tj = 25°C 28 55 mV VI = 5.8V, IO = 20mA, Tj = 25°C 0.07 0.2 V VI = 5.8V, IO = 50mA, Tj = 25°C 0.13 0.3 V 0.7 1.2 mA IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 7 to 9V, f = 120Hz 63 dB Output noise voltage Vno f = 10Hz to 100kHz 105 µV ∆VO/Ta Tj = −30 to +125°C 0.3 mV/°C Output voltage temperature coefficient 51 Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 7V, IO = 20mA and CO = 10µF. 4 SFF00007CEB AN80xx/AN80xxM Series ■ Electrical Characteristics at Ta = 25°C (continued) • AN8007, AN8007M (7V type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum input/output voltage difference VDIF(min) Conditions Min Typ Max 6.72 7 7.28 V VI = 7.5 to 13V, Tj = 25°C 6.5 70 mV IO = 1 to 40mA, Tj = 25°C 14 50 mV IO = 1 to 50mA, Tj = 25°C 31 60 mV VI = 6.8V, IO = 20mA, Tj = 25°C 0.07 0.2 V VI = 6.8V, IO = 50mA, Tj = 25°C 0.13 0.3 V 0.7 1.3 mA Tj = 25°C Unit Bias current IBias IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 8 to 10V, f = 120Hz Vno f = 10Hz to 100kHz 120 µV ∆VO/Ta Tj = −30 to +125°C 0.35 mV/°C Output noise voltage Output voltage temperature coefficient 50 62 dB Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 8V, IO = 20mA and CO = 10µF. • AN8008, AN8008M yp(8V type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum input/output voltage difference Bias current VDIF(min) IBias Conditions Unit Min Typ Max 7.68 8 8.32 V VI = 8.5 to 14V, Tj = 25°C 7.5 80 mV IO = 1 to 40mA, Tj = 25°C 15 55 mV Tj = 25°C IO = 1 to 50mA, Tj = 25°C 34 65 mV VI = 7.8V, IO = 20mA, Tj = 25°C 0.07 0.2 V VI = 7.8V, IO = 50mA, Tj = 25°C 0.14 0.3 V 0.7 1.3 mA IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 9 to 11V, f = 120Hz 61 dB Output noise voltage Vno f = 10Hz to 100kHz 135 µV ∆VO/Ta Tj = −30 to +125°C 0.4 mV/°C Output voltage temperature coefficient 49 Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 9V, IO = 20mA and CO = 10µF. • AN8085, AN8085M yp (8.5V type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum input/output voltage difference VDIF(min) Conditions Unit Min Typ Max 8.16 8.50 8.84 V VI = 9 to 14.5V, Tj = 25°C 8.3 90 mV IO = 1 to 40mA, Tj = 25°C 16 60 mV IO = 1 to 50mA, Tj = 25°C 36 70 mV VI = 8.3V, IO = 20mA, Tj = 25°C 0.07 0.2 V VI = 8.3V, IO = 50mA, Tj = 25°C 0.14 0.3 V 0.8 1.4 mA Tj = 25°C Bias current IBias IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 9.5 to 11.5V, f = 120Hz Vno f = 10Hz to 100kHz 140 µV ∆VO/Ta Tj = −30 to +125°C 0.43 mV/°C Output noise voltage Output voltage temperature coefficient 48 60 dB Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 9.5V, IO = 20mA and CO = 10µF. SFF00007CEB 5 AN80xx/AN80xxM Series ■ Electrical Characteristics at Ta = 25°C (continued) • AN8009, AN8009M (9V type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum input/output voltage difference VDIF(min) Conditions Unit Min Typ Max 8.64 9 9.36 V VI = 9.5 to 15V, Tj = 25°C 9 100 mV IO = 1 to 40mA, Tj = 25°C 17 70 mV IO = 1 to 50mA, Tj = 25°C 37 75 mV VI = 8.8V, IO = 20mA, Tj = 25°C 0.07 0.2 V VI = 8.8V, IO = 50mA, Tj = 25°C 0.14 0.3 V 0.8 1.4 mA Tj = 25°C Bias current IBias IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 10 to 12V, f = 120Hz Vno f = 10Hz to 100kHz 150 µV ∆VO/Ta Tj = −30 to +125°C 0.45 mV/°C Output noise voltage Output voltage temperature coefficient 47 59 dB Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 10V, IO = 20mA and CO = 10µF. • AN8010, AN8010M (10V type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Minimum input/output voltage difference Bias current VDIF(min) IBias Conditions Unit Min Typ Max 9.6 10 10.4 V VI = 10.5 to 16V, Tj = 25°C 10 100 mV IO = 1 to 40mA, Tj = 25°C 18 75 mV Tj = 25°C IO = 1 to 50mA, Tj = 25°C 40 85 mV VI = 9.8V, IO = 20mA, Tj = 25°C 0.07 0.2 V VI = 9.8V, IO = 50mA, Tj = 25°C 0.14 0.3 V 0.8 1.4 mA IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 11 to 13V, f = 120Hz 58 dB Output noise voltage Vno f = 10Hz to 100kHz 165 µV ∆VO/Ta Tj = −30 to +125°C 0.5 mV/°C Output voltage temperature coefficient 46 Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 11V, IO = 20mA and CO = 10µF. 6 SFF00007CEB AN80xx/AN80xxM Series ■ Main Characteristics PD Ta (AN80xx series) PD Ta (AN80xxM series) 800 Power dissipation PD (mW) Power dissipation PD (mW) 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 600 500 400 300 200 100 0 160 Mounted on standard board glass epoxy: 20 × 20 × t1.7mm3 with Cu foil of 1cm2 or more 700 0 20 40 Ambient temperature Ta (°C) 60 RR f 100 120 140 160 VO V I 12 AN8005 80 Output voltage VO (V) Ripple rejection ratio RR (dB) 80 Ambient temperature Ta (°C) 70 60 50 40 CO = 10µF IO = 0mA 10 AN8010/M 8 6 AN8005/M 4 AN8002/M 2 30 0 50 100 300 500 1k 3k 5k 10k 30k 50k 100k 0 5 10 Frequency f (Hz) VO I O 5.3 AN8005 VI = 6V CO = 10µF 5.2 Output voltage VO (V) Output voltage VO (V) 20 VO T a 5.3 5.1 5.0 4.9 4.8 4.7 15 Input voltage VI (V) 0 10 20 30 40 50 60 70 80 90 100 AN8005 VI = 6V CO = 10µF IO = 0mA 5.2 5.1 5.0 4.9 4.8 4.7 −40 Output current IO (mA) −20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) SFF00007CEB 7 AN80xx/AN80xxM Series ■ Application Circuit Example VI VO AN80xx AN80xxM Series + 0.33µF − 10µF • AN80xx and AN80xxM series have their internal gain increased in order to improve performance. When the power line on the output side is long, use a capacitor of 10µF. Also, the capacitor on the output side should be attached as close to the IC as possible. • When using at a low temperature, it is recommended to use the capacitors with low internal impedance (for example, tantalum capacitor) for output capacitors. ■ New Package Dimensions (Unit: mm) • SSIP003-P-0000S (Lead-free package) 4.00±0.20 (1.00) (1.00) 5.00±0.20 5.00±0.20 0.60±0.15 1 1.27 2.30±0.20 0.40+0.10 -0.05 13.30±0.50 0.40±0.10 3 1.27 • HSIP003-P-0000Q (Lead-free package) 1.00+0.10 -0.20 2.50±0.10 4.00+0.25 -0.20 4.50±0.10 1.55±0.20 1 0.40+0.10 -0.05 1.50 3 0.40+0.10 -0.05 0.50+0.10 -0.05 (0.75) 1.50±0.10 3.00 0.15 M 8 2.65±0.10 (0.40) 0.10 SFF00007CEB 0.42+0.10 -0.05 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR