AO3401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 specifications). AO3401L is a Green Product ordering option. AO3401 and AO3401L are electrically identical. VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON) < 50mΩ (VGS = -10V) RDS(ON) < 65mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) D TO-236 (SOT-23) Top View G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25°C TA=70°C TA=25°C Alpha & Omega Semiconductor, Ltd. W 1 TJ, TSTG t ≤ 10s Steady-State Steady-State A 1.4 °C -55 to 150 Symbol A V -30 PD Junction and Storage Temperature Range A ±12 -3.5 ID IDM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead Units V -4.2 Pulsed Drain Current B Power Dissipation A Maximum -30 RθJA RθJL Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W AO3401 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage On state drain current ID(ON) Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V -0.7 gFS VSD IS Static Drain-Source On-Resistance V µA ±100 nA -1 -1.3 V 42 50 75 mΩ 53 65 mΩ 80 11 -0.75 120 mΩ -1 S V -2.2 A A TJ=125°C VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VGS=0V, VDS=-15V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime VGS=-4.5V, VDS=-15V, ID=-4A Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=6Ω IF=-4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs Units -25 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance tr tD(off) tf trr Qrr Max -1 -5 TJ=55°C VGS=-10V, ID=-4.2A RDS(ON) Typ 7 954 115 77 pF pF pF 6 Ω 9.4 2 3 nC nC nC 6.3 3.2 38.2 12 20.2 11.2 ns ns ns ns ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 25.00 -10V VDS=-5V -4.5V 20.00 8 15.00 -ID(A) -ID (A) -3V -2.5V 10.00 VGS=-2V 5.00 0.00 0.00 6 125°C 4 25°C 2 0 1.00 2.00 3.00 4.00 5.00 0 0.5 120 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 3 1.8 100 80 VGS=-2.5V VGS=-4.5V 60 40 VGS=-10V 20 0.00 ID=-3.5A, VGS=-4.5V 1.6 ID=-3.5A, VGS=-10V 1.4 VGS=-2.5V 1.2 ID=-1A 1 0.8 2.00 4.00 6.00 8.00 10.00 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 190 1.0E+01 170 1.0E+00 150 ID=-2A 130 1.0E-01 -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 110 90 125°C 70 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 30 1.0E-06 10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1200 Capacitance (pF) 4 -VGS (Volts) 1400 VDS=-15V ID=-4A 3 2 1 1000 Ciss 800 600 400 Coss 200 0 0 2 4 6 8 10 0 12 0 -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=150°C TA=25°C 1.0 20 25 30 TJ(Max)=150°C TA=25°C 30 100µs 0.1s 10ms 20 10 1s 10s DC 0.1 1 10 0 0.001 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 15 10µs 1ms 10 10 40 RDS(ON) 10.0 limited 0.1 5 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000