Rev 3: June 2005 AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7801 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. Standard Product AO7801 is Pb-free (meets ROHS & Sony 259 specifications). AO7801L is a Green Product ordering option. AO7801 and AO7801L are electrically identical. VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 520mΩ (VGS = -4.5V) RDS(ON) < 700mΩ (VGS = -2.5V) RDS(ON) < 950mΩ (VGS = -1.8V) SC-70-6 (SOT-323) Top View D1 G2 S2 S1 G1 D2 G2 G1 TA=25°C Junction and Storage Temperature Range V Alpha & Omega Semiconductor, Ltd. W 0.19 TJ, TSTG t ≤ 10s Steady-State Steady-State A -3 -55 to 150 Symbol A ±8 0.3 PD TA=70°C A Units V -0.48 ID IDM TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Maximum -20 -0.6 TA=70°C Pulsed Drain Current B Power Dissipation A S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A D2 D1 RθJA RθJL Typ 360 400 300 °C Max 415 460 350 Units °C/W °C/W °C/W AO7801. AO7801L Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, V DS=-5V -3 -0.6 -0.9 V 400 520 542 700 VGS=-2.5V, I D=-0.5A 540 700 mΩ VGS=-1.8V, I D=-0.4A 700 950 mΩ -1 V -0.4 A 140 pF TJ=125°C Forward Transconductance Diode Forward Voltage IS=-0.5A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-0.6A DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 1.7 S -0.86 114 VGS=0V, VDS=-10V, f=1MHz 17 pF 14 VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, V DS=-10V, I D=-0.6A mΩ pF 12 17 Ω 1.44 1.8 nC nC Gate Drain Charge 0.35 nC Turn-On DelayTime 6.5 ns tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Qrr A 0.14 Qgd trr µA µA VSD Output Capacitance -5 ±10 gFS Coss V TJ=55°C VGS=-4.5V, I D=-0.6A IS Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max VDS=-16V, VGS=0V IDSS RDS(ON) Typ VGS=-4.5V, V DS=-10V, RL=16.7Ω, RGEN=3Ω 6.5 ns 18.2 ns 5.5 Body Diode Reverse Recovery Time IF=-0.6A, dI/dt=100A/µs 10 Body Diode Reverse Recovery Charge IF=-0.6A, dI/dt=100A/µs 3 ns 13 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. ns nC AO7801. AO7801L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 6 -6V -10V 25°C -4.5V VDS=-5V -4V 3 125°C -3.5V -ID(A) -ID (A) 4 -3V 2 -2.5V 2 1 VGS=-2.0V 0 0 0 1 2 3 4 5 0 0.5 1 900 2 1.6 Normalized On-Resistance VGS=-1.8V 800 RDS(ON) (mΩ) 1.5 700 VGS=-2.5V 600 500 VGS=-4.5V 400 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 300 VGS=-1.8V ID=-0.4A 1.4 VGS=-2.5V ID=-0.5A 1.2 VGS=-4.5V ID=-0.6A 1 0.8 0 1 2 3 4 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+00 900 ID=-0.6A 800 1.0E-01 -IS (A) RDS(ON) (mΩ) 125°C 1.0E-02 700 125°C 600 500 25°C 1.0E-03 1.0E-04 25°C 1.0E-05 400 1.0E-06 300 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.4 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO7801. AO7801L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 5 VDS=-10V ID=-0.6A Capacitance (pF) -VGS (Volts) 4 3 2 1 0 Ciss 150 100 Coss Crss 50 0 0.0 0.5 1.0 1.5 2.0 0 -Qg (nC) Figure 7: Gate-Charge Characteristics -ID (Amps) 14 TJ(Max)=150°C, TA=25°C 10µs RDS(ON) limited 1.00 1ms 100µs 20 10 10ms 1s 10s 15 TJ(Max)=150°C TA=25°C 12 0.1s 0.10 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) 10.00 5 DC 8 6 4 0.01 2 0 0.001 0.00 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=415°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000