AON2409 30V P-Channel MOSFET General Description Product Summary The AON2409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-10V) -30V -8A RDS(ON) (at VGS =-10V) < 32mΩ RDS(ON) (at VGS =-4.5V) < 53mΩ VDS DFN 2x2B Top View S Bottom View D D D D S Pin 1 D G Pin 1 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 1 : Nov 2011 Steady-State A 2.8 W 1.8 -55 to 150 TJ, TSTG Symbol t ≤ 10s V -32 PD TA=70°C ±20 -6.3 IDM TA=25°C Power Dissipation A Units V -8 ID TA=70°C Maximum -30 RθJA www.aosmd.com Typ 37 66 °C Max 44 79 Units °C/W °C/W Page 1 of 5 AON2409 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -1.1 ID(ON) On state drain current VGS=-10V, VDS=-5V -32 TJ=55°C nA V 26.5 32 33.6 41 VGS=-4.5V, ID=-6A 42 53 20 TJ=125°C Forward Transconductance VDS=-5V, ID=-8A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Gate resistance µA -2.3 gFS Rg -5 ±100 Static Drain-Source On-Resistance Output Capacitance Units -1.75 VGS=-10V, ID=-8A Coss Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz A -0.7 mΩ S -1 V 3.5 A 530 pF 114 pF 75 VGS=0V, VDS=0V, f=1MHz mΩ pF Ω 11 22 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 14.5 nC Qg(4.5V) Total Gate Charge 6 7.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=-10V, VDS=-15V, ID=-8A VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω 1.8 nC 3 nC 7.7 ns 5.5 ns 26.3 ns tf Turn-Off Fall Time 11.5 ns trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/µs 12.2 Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/µs 25.4 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1 : Nov 2011 www.aosmd.com Page 2 of 5 AON2409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 -4.5V -10V VDS=-5V -4V 15 15 -ID(A) -ID (A) -6V 10 -3.5V 10 125°C 25°C 5 5 VGS=-3.0V 0 0 0 1 2 3 4 0 5 70 3 4 5 6 Normalized On-Resistance 1.4 60 RDS(ON) (mΩ Ω) 2 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=-4.5V 50 40 30 20 VGS=-10V VGS=-10V ID=-8A 1.2 VGS=-4.5V ID=-6A 1 0.8 10 0 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 90 80 1.0E+01 -IS (A) ID=-8A 70 RDS(ON) (mΩ Ω) 1 60 1.0E+00 1.0E-01 50 125°C 125°C 1.0E-02 40 25°C 1.0E-03 30 25°C 1.0E-04 20 10 1.0E-05 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: Nov 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AON2409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=-15V ID=-8A 8 Ciss Capacitance (pF) -VGS (Volts) 600 6 4 400 Coss 200 2 0 Crss 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 10000 100.0 TA=25°C 10µs 10µs RDS(ON) limited 100µs 1ms 1.0 10ms TJ(Max)=150°C TC=25°C 0.1 1000 Power (W) 10.0 -ID (Amps) 30 100 DC 10 0.0 0.01 0.1 1 -VDS (Volts) 10 1 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=79°C/W 0.1 Single Pulse 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: Nov 2011 www.aosmd.com Page 4 of 5 AON2409 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 1: Nov 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5