AOSMD AOT2916L 100v n-channel mosfet Datasheet

AOT2916L/AOTF2916L
100V N-Channel MOSFET
General Description
Product Summary
The AOT2916L & AOTF2916L uses trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized due
to an extremely low combination of RDS(ON), Ciss and
Coss. This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
100V
23A / 17A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 34mΩ
RDS(ON) (at VGS=4.5V)
< 43.5mΩ
100% UIS Tested
100% Rg Tested
Top View
TO-220
D
TO-220F
G
AOT2916L
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
12
5
A
A
4
IAS
8
A
EAS
3
mJ
41.5
23.5
20.5
11.5
2.1
TJ, TSTG
RθJA
RθJC
-55 to 175
AOT2916L
15
60
3.6
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W
W
1.3
Symbol
t ≤ 10s
V
50
PDSM
Junction and Storage Temperature Range
Units
V
17
16
PD
TA=25°C
Rev 0 : Oct. 2012
±20
IDSM
TA=70°C
AOTF2916L
100
IDM
TA=25°C
Continuous Drain
Current
S
23
ID
TC=100°C
C
D
AOT2916L
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
G
AOTF2916L
S
°C
AOTF2916L
15
60
6.4
Units
°C/W
°C/W
°C/W
Page 1 of 7
AOT2916L/AOTF2916L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
100
TJ=55°C
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS,ID=250µA
1.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
50
±100
nA
2
2.7
V
28
34
51
62
VGS=4.5V, ID=3A
35
43.5
28
mΩ
S
1
V
23
A
VGS=10V, ID=10A
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=10A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate-Body leakage current
Output Capacitance
Units
1
IGSS
Coss
Max
V
VDS=100V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
A
0.75
mΩ
870
pF
68
pF
3.5
pF
7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12.5
20
nC
Qg(4.5V) Total Gate Charge
5.5
10
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=50V, ID=10A
VGS=10V, VDS=50V, RL=5Ω,
RGEN=3Ω
2.5
nC
2
nC
7.5
ns
3.5
ns
23
ns
tf
Turn-Off Fall Time
5.5
ns
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs
20
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
88
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Oct. 2012
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Page 2 of 7
AOT2916L/AOTF2916L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
10V
6V
VDS=5V
4.5V
40
30
30
20
ID(A)
ID (A)
4V
125°C
20
3.5V
10
10
Vgs=3.0V
25°C
0
0
0
1
2
3
4
1
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
40
3
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
5
Normalized On-Resistance
2.6
35
RDS(ON) (mΩ
Ω)
2
VGS=4.5V
30
VGS=10V
25
2.4
2.2
VGS=10V
ID=10A
2
17
5
2
10
=4.5V
1.8
1.6
1.4
VGS
ID=3A
1.2
1
0.8
20
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
80
1.0E+02
ID=10A
1.0E+01
70
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
60
50
40
125°C
1.0E-01
1.0E-02
1.0E-03
25°C
25°C
30
1.0E-04
1.0E-05
20
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Oct. 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AOT2916L/AOTF2916L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=50V
ID=10A
1000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
800
600
Coss
400
2
200
Crss
0
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
15
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
100
200
1000.0
TJ(Max)=175°C
TC=25°C
10µs
100.0
150
RDS(ON)
10.0
100µs
1ms
10ms
1.0
TJ(Max)=175°C
TC=25°C
0.1
DC
Power (W)
10µs
ID (Amps)
20
17
5
2
10
100
50
0.0
0
0.01
0.1
1
10
100
1000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT2916L (Note F)
0.0001 0.001
0.01
0.1
1
10
0
100
1000
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
for AOT2916L (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.6°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2916L (Note F)
Rev 0 : Oct. 2012
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Page 4 of 7
AOT2916L/AOTF2916L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
1000.0
TJ(Max)=175°C
TC=25°C
250
100.0
10.0
RDS(ON)
Power (W)
ID (Amps)
10µs
100µs
1ms
10ms
1.0
1.6
150
2.15
100
DC
TJ(Max)=175°C
TC=25°C
0.1
200
50
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001 0.001
0.01
0.1
1
10
100
1000
17
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
5
for AOTF2916L (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area for AOTF2916L
2
10
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=6.4°C/W
1
0
18
0.1
PD
Single Pulse
Ton
0.01
1E-05
T
40
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2916L (Note F)
Rev 0 : Oct. 2012
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Page 5 of 7
AOT2916L/AOTF2916L
50
25
40
20
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10
15
1.6
2.15
10
5
0
0
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
175
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
175
1000
Power (W)
TA=25°C
100
17
5
2
10
10
1
0.001
0.1
0
18
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1000
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Oct. 2012
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Page 6 of 7
AOT2916L/AOTF2916L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0 : Oct. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7
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