AOSMD AOT402 N-channel enhancement mode field effect transistor Datasheet

AOT402
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOT402 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard Product AOT402 is Pb-free (meets ROHS &
Sony 259 specifications). AOT402L is a Green
Product ordering option. AOT402 and AOT402L are
electrically identical.
VDS (V) = 105V
ID = 110 A
(VGS = 10V)
RDS(ON) < 8.6 mΩ (VGS = 10V) @ ID = 30A
RDS(ON) < 10 mΩ (VGS = 6V)
TO-220
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
C
C
Repetitive avalanche energy L=0.3mH
C
TC=25°C
Power Dissipation B
Junction and Storage Temperature Range
V
A
200
IAR
100
A
EAR
540
mJ
85
300
W
150
TJ, TSTG
Thermal Characteristics
Parameter
Alpha & Omega Semiconductor, Ltd.
±25
ID
IDM
PD
TC=100°C
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Units
V
110
TC=100°C
Pulsed Drain Current
Avalanche Current
Maximum
105
°C
-55 to 175
Steady-State
Symbol
RθJA
Steady-State
RθJC
Typ
Max
Units
47
0.25
60
0.5
°C/W
°C/W
AOT402
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=10mA, VGS=0V
105
1
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±25V
Gate Threshold Voltage
VDS=VGS, ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
4
V
6.9
8.6
12.8
15
VGS=6V, ID=30A
7.9
10
VDS=5V, ID=30A
88
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
2
200
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
µA
3.3
Static Drain-Source On-Resistance
Crss
5
nA
RDS(ON)
Output Capacitance
Units
100
VGS=10V, ID=30A
Coss
Max
V
VDS=84V, VGS=0V
VGS(th)
IS
Typ
A
0.7
7.7
mΩ
mΩ
S
1
V
110
A
10
nF
VGS=0V, VDS=25V, f=1MHz
820
VGS=0V, VDS=0V, f=1MHz
1.25
2
Ω
182
230
nC
pF
300
VGS=10V, VDS=25V, ID=30A
VGS=10V, VDS=25V, RL=0.75Ω,
RGEN=3Ω
pF
54
nC
44
nC
30.5
ns
42.5
ns
66
ns
16
IF=30A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
86
ns
115
375
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev0: Sept. 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOT402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
80
10V
175
6V
VDS=5V
150
60
5V
ID(A)
ID (A)
125
100
75
40
4.5V
50
20
25
125°C
VGS=4V
25°C
0
0
0
1
2
3
4
5
0
VDS (Volts)
Fig 1: On-Region Characteristics
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics
10
2.4
9
VGS=6V
Normalized On-Resistance
RDS(ON) (mΩ)
1
8
7
6
VGS=10V
5
2.2
VGS=10V
ID=30A
2
1.8
1.6
VGS=6V
ID=30A
1.4
1.2
1
4
0
20
40
60
80
0.8
100
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
18
ID=30A
16
1.0E+01
125°C
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ)
14
12
1.0E-01
25°C
1.0E-02
10
25°C
1.0E-03
8
1.0E-04
6
0.0
0
4
8
12
16
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOT402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
12000
VDS=25V
ID=30A
10000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
8000
6000
4000
Coss
2
2000
Crss
0
0
0
25
50
75
100 125 150 175
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
200
1000.0
20
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
100
1000
TJ(Max)=175°C, TA=25°C
10µs
RDS(ON)
limited
600
100µs
10.0
10ms
DC
1.0
400
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
ZθJC Normalized Transient
Thermal Resistance
TJ(Max)=175°C
TA=25°C
800
Power (W)
ID (Amps)
100.0
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=0.5°C/W
1000
200
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Case (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOT402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
350
300
100
Power Dissipation (W)
ID(A), Peak Avalanche Current
120
80
60
T=25°C
40
T=150°C
20
200
150
100
50
0
0.00001
0
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
100
80
60
40
20
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note B)
120
Current rating ID(A)
250
175
175
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