AOU448 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOU448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU448 is Pb-free (meets ROHS & Sony 259 specifications). AOU448L is a Green Product ordering option. AOU448 and AOU448L are electrically identical. VDS (V) = 30V ID = 75A RDS(ON) < 5.6mΩ (VGS = 10V) RDS(ON) < 9mΩ (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V A ID IDM 200 IAR 30 A EAR 45 mJ 56 50 PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Units V 75 TC=100°C Pulsed Drain Current Avalanche Current Maximum 30 TJ, TSTG °C -55 to 175 Symbol Steady-State Steady-State W 25 RθJC Typ 44 2 Max 55 3 Units °C/W °C/W AOU448 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V 1 1.5 2.5 V 4.7 5.6 7 8.5 VGS=4.5V, ID=20A 7.3 9 VDS=5V, ID=20A 40 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current 1 100 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time 2342 VGS=0V, VDS=15V, f=1MHz 1 V 55 A 2810 pF 462 VGS=10V, VDS=15V, ID=20A 1.1 mΩ S pF 320 VGS=0V, VDS=0V, f=1MHz mΩ pF 1.5 Ω 70 84 nC 34.8 42 nC nC Gate Drain Charge 18.5 nC Turn-On DelayTime 9 ns 11 ns 30.7 ns 9.2 ns tD(off) Turn-Off DelayTime Turn-Off Fall Time Qrr A 13.1 tf trr µA nA RDS(ON) Output Capacitance 5 100 VGS=10V, ID=20A Coss Units V TJ=55°C IGSS Max 30 VDS=24V, VGS=0V VGS(th) IS Typ VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 34.5 28.3 42 34 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. I. Revision 0: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 5V 90 VDS=5V 4.5V 50 80 10V 70 40 4V ID(A) ID (A) 60 50 125°C 30 40 20 3.5V 30 20 25°C 5.5 6.6 9.5 10 VGS=3V 10 0 0 0 1 2 3 4 2 5 2.5 12 3.5 4 4.5 Normalized On-Resistance 1.8 VGS=4.5V 10 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 8 6 VGS=10V 4 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 2 0 10 0.8 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 20 1.0E+02 ID=20A 1.0E+01 16 12 IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 125°C 1.0E-01 25°C 1.0E-02 8 1.0E-03 25°C 4 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOU448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 VDS=15V ID=20A 3600 Ciss 3200 Capacitance (pF) VGS (Volts) 8 6 4 2800 2400 2000 Coss 1600 Coss Crss 1200 2 800 400 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 1000.0 RDS(ON) limited 10µs 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 10.0 160 100µs DC 1ms Power (W) 100.0 5 30 200 TJ(Max)=175°C, TA=25°C ID (Amps) Crss 0 TJ(Max)=175°C TA=25°C 120 80 10ms 1.0 40 0.1 0.1 1 10 100 VDS (Volts) ZθJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0 0.0001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOU448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 tA = 80 L ⋅ ID BV − VDD Power Dissipation (W) ID(A), Peak Avalanche Current 100 60 40 20 TA=25°C 0.0001 0.001 30 20 10 100 75 50 25 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability Current rating ID(A) 40 0 0 0.00001 0 50 175 175