AP03N70I-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 600V RDS(ON) 3.6Ω ID 3.3A S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. It provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching design and costeffectiveness. The TO-220CFM package is widely preferred for all commercial-industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage +30 V ID@TC=25℃ Continuous Drain Current, V GS @ 10V 3.3 A ID@TC=100℃ Continuous Drain Current, V GS @ 10V 2.1 A 10 A 29 W 67 mJ 3 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4.3 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data & specifications subject to change without notice 1 201203131 AP03N70I-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 3 Min. Typ. Max. Units VGS=0V, ID=250uA 600 - - V VGS=10V, ID=1.6A - - 3.6 Ω RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=1.6A - 2 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=125 C) VDS=480V, VGS=0V - - 500 uA Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA ID=3A - 12 20 nC o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 5 - nC 3 td(on) Turn-on Delay Time VDD=300V - 9 - ns tr Rise Time ID=3A - 5 - ns td(off) Turn-off Delay Time RG=10Ω - 18 - ns tf Fall Time VGS=10V - 6 - ns Ciss Input Capacitance VGS=0V - 600 960 pF Coss Output Capacitance VDS=25V - 45 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 4 - pF Min. Typ. IS=3A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=3A, VGS=0V, - 422 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 2580 - nC Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=15mH , RG=25Ω , IAS=3A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP03N70I-HF 4 3 10V 6.0V o T C =25 C o T C =150 C 10V 5.0V ID , Drain Current (A) ID , Drain Current (A) 2 3 2 5.0V 2 4.5V 1 1 4.0V 1 4.5V V G =3.5V V G =4.0V 0 0 0 5 10 15 20 25 0 10 15 20 25 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 1.2 I D =1.6A V G =10V 2.4 1.1 Normalized RDS(ON) Normalized BVDSS (V) 5 1.0 2.0 1.6 1.2 0.8 0.9 0.4 0.8 0.0 -50 0 50 100 150 -50 o 0 50 100 150 o T j , Junction Temperature ( C) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 2 100 1.6 T j = 150 o C Normalized VGS(th) IS (A) 10 T j = 25 o C 1 1.2 0.8 0.1 0.4 0.01 0 0.1 0.3 0.5 0.7 0.9 1.1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP03N70I-HF f=1.0MHz 10000 16 12 C iss C (pF) VGS , Gate to Source Voltage (V) I D =3A V DS =480V 8 100 C oss 4 C rss 0 1 0 4 8 12 16 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 10 ID (A) Operation in this area limited by RDS(ON) 100us 1 1ms 10ms 100ms 1s DC 0 o T c =25 C Single Pulse 0 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 1 10 100 1000 10000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4