AP03N70P
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
BVDSS 600/650/700V
D
▼ Repetitive Avalanche Rated
▼ Fast Switching
G
▼ Simple Drive Requirement
RDS(ON)
3.6Ω
ID
3.3A
S
Description
AP03N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.TO-220 type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
D
TO-220
S
The TO-220 package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DCAC converters and high current high speed switching circuits.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
- /A/H
Rating
Units
600/650/700
V
± 30
V
Continuous Drain Current, VGS @ 10V
3.3
A
Continuous Drain Current, VGS @ 10V
2.1
A
13.2
A
45
W
0.36
W/℃
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
85
mJ
IAR
Avalanche Current
3.3
A
EAR
Repetitive Avalanche Energy
3.3
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
2.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
200303032
AP03N70P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
/-
600
-
-
V
VGS=0V, ID=1mA
/A
650
-
-
V
VGS=0V, ID=1mA
/H
700
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.6A
-
-
3.6
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.6A
-
2
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 30V
-
-
±100
nA
ID=3.3A
-
11.4
-
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
3.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.2
-
nC
VDD=300V
-
8.4
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=3.3A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
17.7
-
ns
tf
Fall Time
RD=91Ω
-
5.9
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
-
pF
Coss
Output Capacitance
VDS=25V
-
45
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
4
-
pF
Min.
Typ.
-
-
3.3
A
-
-
13.2
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
3
Forward On Voltage
1
Tj=25℃, IS=3.3A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=3.3A.
3.Pulse width <300us , duty cycle <2%.
Ordering Code
AP03N70P- X : X Denote BVDSS Grade
Blank = BVDSS 600V
A
= BVDSS 650V
H
= BVDSS 700V
Max. Units
AP03N70P
4
V G =10V
T C =25 o C
V G =10V
T C =150 o C
2
V G =6.0V
V G =5.0V
ID , Drain Current (A)
ID , Drain Current (A)
3
2
V G =5.0V
2
V G =4.5V
1
V G =4.0V
1
1
V G =4.5V
V G =3.5V
V G =4.0V
0
0
0
5
10
15
20
0
25
5
10
15
20
25
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
I D =3.5A
2.5
V G =10V
Normalized R DS(ON)
Normalized BVDSS (V)
1.1
1
2
1.5
1
0.9
0.5
0.8
0
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP03N70P
50
3.5
3
40
30
2
PD (W)
ID , Drain Current (A)
2.5
1.5
20
1
10
0.5
0
0
25
50
75
100
125
150
0
50
o
100
150
o
T c , Case Temperature ( C )
Tc , Case Temperature( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
Normalized Thermal Response (R thjc)
DUTY=0.5
ID (A)
10
10us
1
100us
1ms
0
10ms
T c =25 o C
Single Pulse
10
0.1
0.1
0.05
0.02
PDM
0.01
t
T
SINGLE PULSE
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
100ms
0
1
0.2
100
1000
10000
V DS (V)
Fig 7. Maximum Safe Operating Area
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
AP03N70P
f=1.0MHz
10000
16
I D =3.3A
V DS =480V
12
Ciss
10
C (pF)
VGS , Gate to Source Voltage (V)
14
8
100
Coss
6
4
Crss
2
1
0
0
2
4
6
8
10
12
14
1
16
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
5
100
4
10
o
T j = 150 C
3
VGS(th) (V)
IS (A)
T j = 25 o C
1
2
0.1
1
0
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP03N70P
VDS
90%
RD
VDS
D
0.5x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
+
10%
VGS
S
10 V
VGS
-
td(on)
Fig 13. Switching Time Circuit
tr
td(off) tf
Fig 14. Switching Time Waveform
VG
VDS
10V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q