AP1000A SILICON PIN DIODE PACKAGE STYLE 15 DESCRIPTION: The AP1000A is a Diffused Epitaxial Silicon PIN Diode. MAXIMUM RATINGS IC 100mA VCE 100 V PDISS 500 mW @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +175 C θJC 50 C/W TSOLD 5.0 Sec./200 C O O O O O O O NONE CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM VB IR = 10 µA CJ VR = 6.0 V f = 1.0 MHz 0.05 IF = 20 mA f = 1.0 GHz 2.6 RS IF = 100 mA 2.0 IF = 10 mA TS 10%-90% / 90%-10% CP V 100 TL IR = 6.0 mA pF Ohms nS 100 10 f = 1.0 MHz UNITS nS 0.15 pF 2.5 nH LS A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1