Data Sheet 300mA RF ULDO REGULATOR AP2210 General Description Features The AP2210 is a 300mA ULDO regulator which provides very low noise, ultra low dropout voltage (typically 250mV at 300mA), very low standby current (1µA maximum) and excellent power supply ripple rejection (PSRR 75dB at 100Hz) in battery powered applications, such as handsets, PDAs and in noise sensitive applications, such as RF electronics. · · · · Up to 300mA Output Current Excellent ESR Stability Low Standby Current Low Dropout Voltage: VDROP=250mV at 300mA · · High Output Accuracy: ±1% Good Ripple Rejection Ability: 75dB at 100Hz and IOUT=100µA · · · · · · Tight Load and Line Regulation Low Temperature Coefficient Over Current Protection Thermal Protection Reverse-battery Protection Logic-controlled Enable The AP2210 also features individual logic compatible enable/shutdown control inputs, a low power shutdown mode for extended battery life, over current protection, over temperature protection, as well as reversed-battery protection. The AP2210 has 2.5V, 2.8V, 3.0V and 3.3V versions. Applications The AP2210 is available in space saving SOT-23-3 and SOT-23-5 packages. · · · · · · Cellular Phones Cordless Phones Wireless Communicators PDAs/Palmtops PC Mother Board Consumer Electronics SOT-23-5 SOT-23-3 Figure 1. Package Types of AP2210 Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 1 Data Sheet 300mA RF ULDO REGULATOR AP2210 Pin Configuration N Package K Package (SOT-23-5) (SOT-23-3) VIN VIN 1 GND 2 EN 3 5 VOUT 4 BYP 3 1 2 GND VOUT Figure 2. Pin Configuration of AP2210 (Top View) Pin Description Pin Number Function Pin Name SOT-23-3 SOT-23-5 1 2 GND Ground 2 5 VOUT Regulated output voltage 3 1 VIN Input voltage 3 EN Enable input: CMOS or TTL compatible input. Logic high=enable, logic low=shutdown 4 BYP Bypass capacitor for low noise operation Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 2 Data Sheet 300mA RF ULDO REGULATOR AP2210 Functional Block Diagram VIN BYP 3 (1) 2 (5) VOUT (4) + EN Bandgap Ref. A (B) A for SOT-23-3 B for SOT-23-5 (3) Current Limit Thermal Shutdown 1 (2) GND Figure 3. Functional Block Diagram of AP2210 Ordering Information AP2210 E1: Lead Free Blank: Tin Lead Circuit Type TR: Tape and Reel Package N: SOT-23-3 K: SOT-23-5 Package SOT-23-3 Temperature Range 2.5: Fixed Output 2.5V 2.8: Fixed Output 2.8V 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V Part Number Tin Lead -40 to 125oC AP2210K-2.5TR SOT-23-5 -40 to 125oC Marking ID Lead Free Tin Lead Lead Free Packing Type AP2210N-2.5TRE1 EH2 Tape & Reel AP2210N-2.8TRE1 EH3 Tape & Reel AP2210N-3.0TRE1 EH4 Tape & Reel AP2210N-3.3TRE1 EH5 Tape & Reel E5C Tape & Reel E5F Tape & Reel AP2210K-2.5TRE1 K5C AP2210K-2.8TRE1 AP2210K-3.0TR AP2210K-3.0TRE1 K5H E5H Tape & Reel AP2210K-3.3TR AP2210K-3.3TRE1 K5K E5K Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 3 Data Sheet 300mA RF ULDO REGULATOR AP2210 Absolute Maximum Ratings (Note 1) Symbol Value Unit Supply Input Voltage VIN 15 V Enable Input Voltage VEN 15 V PD Internally Limited (Thermal Protection) W TLEAD 260 o Junction Temperature TJ 150 oC Storage Temperature TSTG -65 to 150 oC ESD (Machine Model) ESD 300 V Thermal Resistance (No Heatsink) θJA Parameter Power Dissipation Lead Temperature (Soldering, 10sec) C SOT-23-3 200 SOT-23-5 200 oC/W Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Input Voltage VIN 2.5 13.2 V Enable Input Voltage VEN 0 13.2 V TJ -40 125 oC Operating Junction Temperature Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 4 Data Sheet 300mA RF ULDO REGULATOR AP2210 Electrical Characteristics AP2210-2.5 Electrical Characteristics VIN=3.5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Symbol ∆VOUT/VOUT Conditions Variation from specified VOUT Min Typ Max -1 1 -2 2 % ∆VOUT/∆T 120 µV/oC (∆VOUT/VOUT)/∆T 48 ppm/oC VRLINE 1.5 VIN=3.5V to 13.2V 4.5 12 Load Regulation (Note 4) Unit VRLOAD IOUT=0.1mA to 300mA 1 6 30 15 IOUT=100µA mV mV 50 70 110 IOUT=50mA 150 230 Dropout Voltage (Note 5) VDROP 140 IOUT=100mA 250 mV 300 165 IOUT=150mA 275 350 250 IOUT=300mA 400 500 Standby Current ISTD VEN≤0.4V (shutdown) 0.01 VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=100µA 1 100 150 180 VEN≥2.0V, IOUT=50mA Ground Pin Current (Note 6) µA 5 350 µA 600 800 IGND VEN≥2.0V, IOUT=150mA 1.3 1.9 2.5 VEN≥2.0V, IOUT=300mA 4 mA 10 15 Ripple Rejection PSRR f=100Hz, IOUT=100µA 75 Current Limit ILIMIT VOUT=0V 450 Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 Mar. 2007 Rev. 1. 2 dB 900 mA nV / Hz BCD Semiconductor Manufacturing Limited 5 Data Sheet 300mA RF ULDO REGULATOR AP2210 Electrical Characteristics (Continued) AP2210-2.5 Electrical Characteristics VIN=3.5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Enable Input Logic-low Voltage Symbol VIL Conditions Min Typ Max 0.4 Regulator shutdown Unit V 0.18 Enable Input Logic-high Voltage VIH Enable Input Logic-low Current IIL Enable Input Logic-high Current IIH Regulator enabled VIL≤0.4V 2.0 V 0.01 VIL≤0.18V VIL≥2.0V VIL≥2.0V 1 µA 2 5 20 µA 25 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 6 Data Sheet 300mA RF ULDO REGULATOR AP2210 Electrical Characteristics (Continued) AP2210-2.8 Electrical Characteristics VIN=3.8V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Symbol ∆VOUT/VOUT Conditions Variation from specified VOUT Min Typ Max -1 1 -2 2 % ∆VOUT/∆T 120 µV/oC (∆VOUT/VOUT)/∆T 42.8 ppm/oC VRLINE 1.5 VIN=3.8V to 13.2V 4.5 12 Load Regulation (Note 4) Unit VRLOAD IOUT=0.1mA to 300mA 1 6 30 15 IOUT=100µA mV mV 50 70 110 IOUT=50mA 150 230 Dropout Voltage (Note 5) VDROP 140 IOUT=100mA 250 mV 300 165 IOUT=150mA 275 350 250 IOUT=300mA 400 500 Standby Current ISTD VEN≤0.4V (shutdown) 0.01 VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=100µA 1 100 150 180 VEN≥2.0V, IOUT=50mA Ground Pin Current (Note 6) µA 5 350 µA 600 800 IGND VEN≥2.0V, IOUT=150mA 1.3 1.9 2.5 VEN≥2.0V, IOUT=300mA 4 mA 10 15 Ripple Rejection PSRR f=100Hz, IOUT=100µA 75 Current Limit ILIMIT VOUT=0V 450 Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 Mar. 2007 Rev. 1. 2 dB 900 mA nV / Hz BCD Semiconductor Manufacturing Limited 7 Data Sheet 300mA RF ULDO REGULATOR AP2210 Electrical Characteristics (Continued) AP2210-2.8 Electrical Characteristics VIN=3.8V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Enable Input Logic-low Voltage Symbol VIL Conditions Min Typ Max 0.4 Regulator shutdown Unit V 0.18 Enable Input Logic-high Voltage VIH Enable Input Logic-low Current IIL Enable Input Logic-high Current IIH Regulator enabled VIL≤0.4V 2.0 V 0.01 VIL≤0.18V VIL≥2.0V VIL≥2.0V 1 µA 2 5 20 µA 25 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 8 Data Sheet 300mA RF ULDO REGULATOR AP2210 Electrical Characteristics (Continued) AP2210-3.0 Electrical Characteristics VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Symbol ∆VOUT/VOUT Conditions Variation from specified VOUT Min Typ Max -1 1 -2 2 % ∆VOUT/∆T 120 µV/oC (∆VOUT/VOUT)/∆T 40 ppm/oC VRLINE 1.5 VIN=4V to 13.2V 4.5 12 Load Regulation (Note 4) Unit VRLOAD IOUT=0.1mA to 300mA 1 6 30 15 IOUT=100µA mV mV 50 70 110 IOUT=50mA 150 230 Dropout Voltage (Note 5) VDROP 140 IOUT=100mA 250 mV 300 165 IOUT=150mA 275 350 250 IOUT=300mA 400 500 Standby Current ISTD VEN≤0.4V (shutdown) 0.01 VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=100µA 1 100 150 180 VEN≥2.0V, IOUT=50mA Ground Pin Current (Note 6) µA 5 350 µA 600 800 IGND VEN≥2.0V, IOUT=150mA 1.3 1.9 2.5 VEN≥2.0V, IOUT=300mA 4 mA 10 15 Ripple Rejection PSRR f=100Hz, IOUT=100µA 75 Current Limit ILIMIT VOUT=0V 450 Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 Mar. 2007 Rev. 1. 2 dB 900 mA nV / Hz BCD Semiconductor Manufacturing Limited 9 Data Sheet 300mA RF ULDO REGULATOR AP2210 Electrical Characteristics (Continued) AP2210-3.0 Electrical Characteristics VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Enable Input Logic-low Voltage Symbol VIL Conditions Min Typ Max 0.4 Regulator shutdown Unit V 0.18 Enable Input Logic-high Voltage VIH Enable Input Logic-low Current IIL Enable Input Logic-high Current IIH Regulator enabled VIL≤0.4V 2.0 V 0.01 VIL≤0.18V VIL≥2.0V VIL≥2.0V 1 µA 2 5 20 µA 25 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 10 Data Sheet 300mA RF ULDO REGULATOR AP2210 Electrical Characteristics (Continued) AP2210-3.3 Electrical Characteristics VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Symbol ∆VOUT/VOUT Conditions Min Variation from specified VOUT Typ Max -1 1 -2 2 % ∆VOUT/∆T 120 µV/oC (∆VOUT/VOUT)/∆T 36.3 ppm/oC VRLINE 1.5 VIN=4.3V to 13.2V 4.5 12 Load Regulation (Note 4) Unit VRLOAD IOUT=0.1mA to 300mA 1 6 30 15 IOUT=100µA mV mV 50 70 110 IOUT=50mA 150 230 Dropout Voltage (Note 5) VDROP 140 IOUT=100mA 250 mV 300 165 IOUT=150mA 275 350 250 IOUT=300mA 400 500 Standby Current ISTD VEN≤0.4V (shutdown) 0.01 VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=100µA 1 100 150 180 VEN≥2.0V, IOUT=50mA Ground Pin Current (Note 6) µA 5 350 µA 600 800 IGND VEN≥2.0V, IOUT=150mA 1.3 1.9 2.5 VEN≥2.0V, IOUT=300mA 4 mA 10 15 Ripple Rejection PSRR f=100Hz, IOUT=100µA 75 Current Limit ILIMIT VOUT=0V 450 Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 Mar. 2007 Rev. 1. 2 dB 900 mA nV / Hz BCD Semiconductor Manufacturing Limited 11 Data Sheet 300mA RF ULDO REGULATOR AP2210 Electrical Characteristics (Continued) AP2210-3.3 Electrical Characteristics VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Enable Input Logic-low Voltage Symbol VIL Conditions Min Typ Max 0.4 Regulator shutdown Unit V 0.18 Enable Input Logic-high Voltage VIH Enable Input Logic-low Current IIL Enable Input Logic-high Current IIH Regulator enabled VIL≤0.4V 2.0 V 0.01 VIL≤0.18V VIL≥2.0V VIL≥2.0V 1 µA 2 5 20 µA 25 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 12 Data Sheet 300mA RF ULDO REGULATOR AP2210 Typical Performance Characteristics 550 3.0100 AP2210-3.0 VIN=4V, IOUT=10mA 3.0075 CIN=1.0µF, COUT=2.2µF Output Voltage (V) 3.0125 Dropout Voltage (mv) 3.0150 3.0050 3.0025 3.0000 2.9975 2.9950 IOUT=50mA 450 IOUT=100mA IOUT=150mA 400 IOUT=300mA 350 300 250 200 150 2.9925 2.9900 100 2.9875 50 2.9850 -50 0 -25 0 25 50 75 100 -60 125 -40 -20 o 0 20 40 60 80 100 120 140 o Junction Temperature ( C) Junction Temperature ( C) Figure 4. Output Voltage vs. Junction Temperature Figure 5. Dropout Voltage vs. Junction Temperature 5.0 5.0 AP2210-3.0 VIN=4V,CIN=1.0µF,COUT=2.2µF 4.5 4.5 o TA=25 C 4.0 Ground Pin Current (mA) CIN=1.0µF, COUT=2.2µF 4.0 Ground Pin Current (mA) CIN=1.0µF, COUT=2.2µF 500 3.5 3.0 2.5 2.0 1.5 3.5 3.0 IOUT=100mA 2.0 IOUT=150mA 1.0 0.5 0.5 0 50 100 150 200 250 IOUT=300mA 1.5 1.0 0.0 IOUT=50mA 2.5 0.0 300 -60 -40 -20 0 20 40 60 80 100 120 140 o Output Current (mA) Junction Temperature ( C) Figure 6. Ground Pin Current vs. Output Current Figure 7. Ground Pin Current vs. Junction Temperature Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 13 Data Sheet 300mA RF ULDO REGULATOR AP2210 Typical Performance Characteristics (Continued) 2.0 20 Enable Current (µA) 16 VEN=2.0V COUT=2.2µF, IOUT=100µA VEN=3.0V Enable Voltage (V) 18 VEN=1.8V AP2210-3.0 VIN=4V, CIN=1.0µF VEN=3.7V 14 12 10 8 1.8 AP2210-3.0 CIN=1.0µF, COUT=2.2µF 1.6 VIN=4V, IOUT=100µA 1.4 1.2 VEN=logic high VEN=logic low 1.0 6 0.8 4 0.6 2 0 -50 -25 0 25 50 75 100 0.4 -50 125 -25 0 25 50 75 100 125 o o Junction Temperature ( C) Junction Temperature ( C) Figure 8. Enable Current vs. Junction Temperature Figure 9. Enable Voltage vs. Junction Temperature 10 200 IOUT=10mA CIN=1.0µF, COUT=2.2µF Output Noise ( µV/ Hz ) Noise (µVrms) 1 Noise Measurement Filter: DIN Noise 150 100 0.1 0.01 AP2210-3.0 VIN=4.5V, IOUT=10mA 50 0.001 CIN=1.0µF, COUT=2.2µF CBYP=100pF 0.0001 0 10 100 1000 10000 10 Bypass Capacitor (pF) 100 1k 10k 100k 1M 10M Frequency (Hz) Figure 11. Output Noise vs. Frequency Figure 10. Noise vs. Bypass Capacitor Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 14 Data Sheet 300mA RF ULDO REGULATOR AP2210 Typical Performance Characteristics (Continued) 5.5 AP2210-3.0 200 4.5 4 ∆VOUT (50mV/Div) 0 50 0 -50 AP2210-3.0 5 VIN (0.5V/Div) 400 ∆VOUT (50mV/Div) IOUT (200mA/Div) 600 50 0 -50 -100 -100 Time (20µs/Div) Time (20µs/Div) Figure 13. Line Transient (Conditions: VIN=4 to 5V, VEN=2V, IOUT=1mA, COUT=2.2µF) Figure 12. Load Transient (Conditions: VIN=4V, VEN=2V, IOUT=10mA to 300mA, CIN=1.0µF, COUT=2.2µF) 100 VOUT (2V/Div) AP2210-3.0 VIN=4V, VRIPPLE=1VPP 90 4 AP2210-3.0 80 2 IOUT=10mA, COUT=2.2µF 70 PSRR (dB) VEN (2V/Div) 6 0 60 50 40 2 30 0 20 10 -2 0 10 -4 100 1k 10k 100k 1M Frequency (Hz) Time (40µs/Div) Figure 15. PSRR vs. Frequency Figure 14. VEN vs. VOUT (Conditions: VEN=0 to 2V, VIN=4V, IOUT=30mA, CIN=1.0µF, COUT=2.2µF) Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 15 Data Sheet 300mA RF ULDO REGULATOR AP2210 Typical Performance Characteristics (Continued) 0.9 0.9 AP2210-3.0 SOT-23-3 Package No Heatsink 0.8 0.6 0.5 0.4 0.3 0.7 0.6 0.5 0.4 0.3 0.2 0.2 0.1 0.1 0.0 25 50 75 100 125 AP2210-3.0 SOT-23-5 Package No Heatsink 0.8 Power Dissipation (W) Power Dissipation (W) 0.7 0.0 25 150 50 75 100 125 150 o Ambient Temperature ( C) o Ambient Temperature ( C) Figure 17. Power Dissipation vs. Ambient Temperature Figure 16. Power Dissipation vs. Ambient Temperature 1000 1000 COUT=1µF 10 Stable Area 1 No Bypass Capacitor 100 ESR (Ω) ESR (Ω) COUT=2.2µF No Bypass Capacitor 100 10 Stable Area 1 0.1 0.1 0.01 0.01 50 100 150 200 250 50 300 Output Current (mA) 100 150 200 250 300 Output Current (mA) Figure 18. ESR vs. Output Current Figure 19. ESR vs. Output Current Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 16 Data Sheet 300mA RF ULDO REGULATOR AP2210 Typical Performance Characteristics (Continued) 1000 COUT=4.7µF No Bypass Capacitor 100 ESR (Ω) 10 Stable Area 1 0.1 0.01 50 100 150 200 250 300 Output Current (mA) Figure 20. ESR vs. Output Current Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 17 Data Sheet 300mA RF ULDO REGULATOR AP2210 Typical Application AP2210-3.0 VIN=4.0V VIN VIN CIN VIN=4.0V VOUT COUT GND 1.0 µF VIN VOUT=3.0V VOUT 2.2 µF AP2210-3.0 VIN VOUT=3.0V VOUT VOUT GND COUT CIN 1.0 µF EN 2.2 µF BYP C BYP 100pF Figure 21. Typical Application of AP2210 (Note 7) Note 7: Dropout voltage is 250mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.25V is the minimum input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage is VOUT+1V to 13.2V. For AP2210-3.0 version, its input voltage can be set from 4V(VOUT+1V) to 13.2V. Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 18 Data Sheet 300mA RF ULDO REGULATOR AP2210 Application Information To determine if the power dissipated in the regulator reaches the maximum power dissipation (see figure 16, 17), using: TJ = PD*θJA + TA PD=(VIN-VOUT)*IOUT+VIN*IGND Input Capacitor A 1µF minimum capacitor is recommended to be placed between VIN and GND. Output Capacitor It is required to prevent oscillation. 1.0µF minimum is recommended when CBYP is unused. 2.2µF minimum is recommended when CBYP is 100pF. The output capacitor may be increased to improve transient response. Where: TJ≤TJ(max), TJ(max) is absolute maximum ratings for the junction temperature; VIN*IGND can be ignored due to its small value. TJ(max) is 150oC, θJA is 200oC/W, no heatsink is required since the package alone will dissipate enough heat to satisfy these requirements unless the calculated value for power dissipation exceeds the limit. Noise Bypass Capacitor Bypass capacitor is connected to the internal voltage reference. A 100pF capacitor connected from BYP to GND make this reference quiet, resulting in a significant reduction in output noise, but the ESR stable area will be narrowed. Example (3.0V version): IOUT=300mA, TA=50oC, VIN(Max) is: The start-up speed of the AP2210 is inversely proportional to the value of reference bypass capacitor. In some cases, if output noise is not a major concern and rapid turn-on is necessary, omit CBYP and leave BYP open. (150oC-50oC)/(0.3A*200oC/W)+3.0V=4.67V Therefore, for good performance, please make sure that input voltage is less than 4.67V without heatsink when TA=50oC. Power Dissipation Thermal shutdown may take place if exceeding the maximum power dissipation in application. Under all possible operating conditions, the junction temperature must be within the range specified under absolute maximum ratings to avoid thermal shutdown. Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 19 Data Sheet 300mA RF ULDO REGULATOR AP2210 Mechanical Dimensions SOT-23-3 Mar. 2007 Rev. 1. 2 Unit: mm(inch) BCD Semiconductor Manufacturing Limited 20 Data Sheet 300mA RF ULDO REGULATOR AP2210 Mechanical Dimensions (Continued) SOT-23-5 Unit: mm(inch) 0.300(0.012) 0.600(0.024) 1.500(0.059) 1.700(0.067) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 1.250(0.049) 1.050(0.041) 0.950(0.037) TYP 0.000(0.000) 0.100(0.004) 1.050(0.041) 1.150(0.045) Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 21 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788