AP2451GY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼ Capable of 2.5V Gate Drive
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
D1
D1
▼ Lower on-resistance
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
2928-8
N-CH BVDSS
20V
RDS(ON)
37mΩ
ID
G2
S2
G1
S1
5A
P-CH BVDSS
Description
-20V
RDS(ON)
75mΩ
ID
-3.7A
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
D2
D1
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
20
-20
V
±12
±12
V
Continuous Drain Current
3
5
-3.7
A
Continuous Drain Current
3
4
-3
A
20
-20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
90
℃/W
1
201201312
AP2451GY-HF
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=6A
-
-
32
mΩ
VGS=4.5V, ID=5A
-
-
37
mΩ
VGS=2.5V, ID=3A
-
-
55
mΩ
0.5
-
1.2
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=5A
-
13
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=70 C) VDS=16V, VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
ID=5A
-
9
15
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
9
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=10Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
620
990
pF
Coss
Output Capacitance
VDS=20V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=5A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
2
AP2451GY-HF
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
-20
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25℃, I D=-1mA
-
0.01
-
V/℃
Static Drain-Source On-Resistance
VGS=-10V, ID=-4A
-
-
57
mΩ
VGS=-4.5V, I D=-3A
-
-
75
mΩ
VGS=-2.5V, I D=-1A
-
-
105
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
RDS(ON)
Test Conditions
VGS=0V, ID=-250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, I D=-250uA
-0.5
-
-1.2
V
gfs
Forward Transconductance
VDS=-5V, ID=-3A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-16V ,VGS=0V
-
-
-10
uA
o
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-3A
-
11
18
nC
Qgs
Gate-Source Charge
VDS=-16V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
td(on)
Turn-on Delay Time2
VDS=-10V
-
10
-
ns
tr
Rise Time
ID=-1A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
26
-
ns
2
tf
Fall Time
RD=10Ω
-
16
-
ns
Ciss
Input Capacitance
VGS=0V
-
740
1180
pF
Coss
Output Capacitance
VDS=-20V
-
160
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Gate Resistance
f=1.0MHz
-
6.6
10
Ω
Source-Drain Diode
Min.
Typ.
Max.
Unit
VSD
Symbol
Forward On Voltage2
Parameter
IS=-1.2A, VGS=0V
Test Conditions
-
-
-1.2
V
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
29
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in 2 copper pad of FR4 board , t <5sec ; 155℃/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP2451GY-HF
N-Channel
20
20
T A =25 o C
5.0 V
4.5 V
3.5 V
16
ID , Drain Current (A)
16
ID , Drain Current (A)
T A = 150 o C
5.0 V
4.5 V
3.5 V
2.5 V
12
8
2.5 V
12
8
V G = 1.5 V
4
4
V G = 1.5 V
0
0
0
1
2
3
0
2
3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
45
I D =5A
V G =4.5V
I D =3A
40
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
35
1.4
1.0
30
25
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
5
Normalized VGS(th)
4
IS(A)
3
T j =150 o C
T j =25 o C
2
1.1
0.7
1
0.3
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j ,Junction Temperature (
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP2451GY-HF
N-Channel
f=1.0MHz
1000
ID=5A
V DS = 16 V
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C oss
100
C rss
4
2
10
0
0
4
8
12
16
1
20
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
100us
ID (A)
1ms
1
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =155o C/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
ID , Drain Current (A)
V DS =5V
VG
T j =25 o C
T j =150 o C
QG
20
4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP2451GY-HF
P-Channel
20
20
-5.0 V
- 4.5 V
- 3.5 V
o
T A = 25 C
-5.0 V
- 4.5 V
- 3.5 V
o
T A = 150 C
16
-ID , Drain Current (A)
-ID , Drain Current (A)
15
- 2.5 V
10
5
12
- 2.5 V
8
4
V G = - 1.5 V
V G = - 1.5 V
0
0
0
1
2
3
4
0
1
2
3
4
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.5
90
I D = -3 A
V G = -4.5 V
I D = -1 A
o
Normalized RDS(ON)
T A =25 C
RDS(ON) (mΩ)
70
50
1.2
0.9
0.6
30
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
1.5
Normalized -VGS(th)
-IS(A)
3
2
T j =150 o C
T j =25 o C
1.1
0.7
1
0.3
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP2451GY-HF
P-Channel
f=1.0MHz
1000
I D =-3A
V DS =-16V
8
C iss
6
C (pF)
-VGS , Gate to Source Voltage (V)
10
4
C oss
2
C rss
100
0
0.0
3.0
6.0
9.0
12.0
15.0
18.0
1
21.0
5
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor =0.5
100us
10
-ID (A)
1ms
1
10ms
0.1
100ms
1s
DC
o
T A =25 C
Single Pulse
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=155 oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
T j =150 o C
QG
20
-4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7