AP40T03S/P
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low Gate Charge
▼ Fast Switching
BVDSS
25V
RDS(ON)
25mΩ
ID
G
28A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
TO-263
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40T03P) are available for low-profile applications.
G
Absolute Maximum Ratings
Symbol
Parameter
D
TO-220
S
Rating
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
± 25
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V
28
A
ID@TA=100℃
Continuous Drain Current, VGS @ 10V
24
A
95
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
31.25
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
4.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200127031
AP40T03S/P
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
25
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.032
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=18A
-
-
25
mΩ
VGS=4.5V, ID=14A
-
-
45
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=18A
-
15
-
S
VDS=25V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=20V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 25V
-
-
±100
nA
ID=18A
-
8.8
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5.8
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=18A
-
62
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=0.83Ω
-
4.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
655
-
pF
Coss
Output Capacitance
VDS=25V
-
145
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Min.
Typ.
-
-
28
A
-
-
95
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Tj=25℃, IS=28A, VGS=0V
Max. Units
AP40T03S/P
90
75
10V
8.0V
T C =150 o C
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 o C
60
6.0V
30
10V
8.0V
50
6.0V
25
V GS =4.0V
V GS =4.0V
0
0
0.0
1.5
3.0
0.0
4.5
1.5
3.0
4.5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
70
I D =18A
V GS =10V
I D =18A
T C =25 ℃
RDS(ON) (mΩ )
Normalized R DS(ON)
50
30
10
1.4
0.8
0.2
1
5
9
13
17
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
36
40
27
30
PD (W)
ID , Drain Current (A)
AP40T03S/P
18
9
20
10
0
0
25
50
75
100
125
150
0
50
T c , Case Temperature ( o C)
100
150
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1000
1
Normalized Thermal Response (R thjc)
Duty Factor = 0.5
ID (A)
100
100us
10
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
1
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthjc + TC
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP40T03S/P
f=1.0MHz
12
10000
VGS , Gate to Source Voltage (V)
I D =18A
9
V DS =10V
V DS =15V
V DS =20V
1000
C (pF)
Ciss
6
Coss
Crss
100
3
0
10
0
3
6
9
12
1
8
15
22
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
2.5
100
2
10
Tj=150 o C
IS(A)
VGS(th) (V)
Tj=25 o C
1.5
1
1
0.1
0.5
0
0.4
0.8
1.2
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
o
T j , Junction Temperature ( C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP40T03S/P
VDS
90%
RD
VDS
D
0.6 x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
+
10%
VGS
S
10 v
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
4.5V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
I
D
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q