AP40T10GI-HF
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
100V
RDS(ON)
36mΩ
ID
G
3
40A
S
Description
AP40T10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
G
D
TO-220CFM(I)
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
.
Rating
Units
100
V
+20
V
Drain Current, VGS @ 10V
3
40
A
Drain Current, VGS @ 10V
3
27
A
150
A
37.5
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201411072
AP40T10GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
100
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=15A
-
-
36
mΩ
VGS=6V, ID=10A
-
-
42
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=15V, ID=15A
-
14.5
-
S
IDSS
Drain-Source Leakage Current
VDS=100V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (T j=125 C) VDS=80V ,VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
24
40
nC
Qgs
Gate-Source Charge
VDS=50V
-
5.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
9.6
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
9
-
ns
tr
Rise Time
ID=40A
-
64
-
ns
td(off)
Turn-off Delay Time
RG=2.5Ω
-
19
-
ns
tf
Fall Time
VGS=10V
-
75
-
ns
Ciss
Input Capacitance
VGS=0V
Coss
Crss
o
-
1310 2100
pF
Output Capacitance
.
V =25V
-
270
-
pF
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Min.
Typ.
IS=15A, VGS=0V
-
-
1.2
V
DS
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
60
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
125
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Ensure that the junction temperature does not exceed T Jmax..
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP40T10GI-HF
125
80
o
T C = 175 C
10V
o
T C =25 C
10V
7.0V
ID , Drain Current (A)
ID , Drain Current (A)
100
7.0V
75
6.0V
50
5.0V
6 .0V
40
5.0 V
V G = 4.5 V
20
V G =4.5V
25
60
0
0
0
2
4
6
8
10
0
12
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
16
Fig 2. Typical Output Characteristics
50
2.8
I D = 10 A
T C =25 o C
I D =15A
V G =10V
2.4
40
.
30
Normalized RDS(ON)
RDS(ON) (mΩ)
8
V DS , Drain-to-Source Voltage (V)
2.0
1.6
1.2
0.8
20
0.4
2
4
6
8
10
-50
0
V GS , Gate-to-Source Voltage (V)
50
100
150
200
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
1.8
T j =175 o C
T j =25 o C
IS(A)
12
Normalized VGS(th)
16
8
1.2
0.6
4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP40T10GI-HF
f=1.0MHz
10000
I D = 40 A
V DS = 50 V
10
C iss
8
1000
C (pF)
VGS , Gate to Source Voltage (V)
12
6
4
C oss
100
C rss
2
10
0
0
10
20
1
30
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1000
100us
10
.
1ms
10ms
100ms
1s
DC
1
o
T C =25 C
Single Pulse
Normalized Thermal Response (R thjc)
1
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP40T10GI-HF
MARKING INFORMATION
Part Number
40T10GI
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5