AP50T10GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Surface Mount Package
▼ Halogen Free & RoHS Compliant Product
BVDSS
100V
RDS(ON)
30mΩ
ID
G
6.5A
S
D
Description
D
D
D
AP50T10 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G
SO-8
S
S
S
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
6.5
A
5.2
A
24
A
2.5
W
ID@TA=25℃
ID@TA=70℃
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
201501124
AP50T10GM-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
Test Conditions
Min.
Typ.
100
-
-
V
VGS=10V, ID=6A
-
-
30
mΩ
VGS=5V, ID=4A
-
-
70
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
12
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=6A
-
41
65
nC
Qgs
Gate-Source Charge
VDS=50V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
15.5
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
10
-
ns
tr
Rise Time
ID=1A
-
9.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
37
-
ns
tf
Fall Time
VGS=10V
-
19
-
ns
Ciss
Input Capacitance
VGS=0V
-
1810 2940
pF
Coss
Output Capacitance
VDS=15V
-
250
-
pF
Crss
Reverse Transfer Capacitance
-
pF
Gate Resistance
-
190
Rg
f=1.0MHz
f=1.0MHz
1.7
3.4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
VSD
Parameter
2
Test Conditions
Max. Units
IS=1.9A, VGS=0V
-
-
1.3
V
trr
Forward On Voltage
Reverse Recovery Time
IS=6A, VGS=0V
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
70
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP50T10GM-HF
40
40
ID , Drain Current (A)
30
20
V G =4.0V
o
10
30
20
10
0
0
0
2
4
8
8.0V
6
0
2
V DS , Drain-to-Source Voltage (V)
4
6
8
10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
2.4
I D =4A
T A =25 o C
ID=6A
V G =10V
Normalized RDS(ON)
2.0
50
RDS(ON) (mΩ )
10V
7.0V
6.0V
5.0V
V G =4.0V
T A =150 C
ID , Drain Current (A)
10V
7.0V
6.0V
5.0V
o
T A =25 C
40
1.6
1.2
0.8
30
0.4
20
0.0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2.0
I D =1mA
1.6
o
Normalized VGS(th)
IS(A)
6
o
T j =150 C
T j =25 C
4
1.2
0.8
2
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP50T10GM-HF
f=1.0MHz
2800
I D =6A
V DS =50V
10
2400
2000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
C iss
1600
6
1200
4
800
2
400
0
C oss
C rss
0
0
10
20
30
40
50
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (R thja)
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
10
100us
1ms
10ms
100ms
ID (A)
1
0.1
1s
0.01
DC
T A =25 o C
Single Pulse
0.001
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125℃
℃ /W
Single Pulse
0.001
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP50T10GM-HF
MARKING INFORMATION
Part Number
50T10GM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5