AP6941GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1 D1 D2 D2
▼ Simple Drive Requirement
N-CH BVDSS
▼ Good Thermal Performance
RDS(ON)
▼ Fast Switching Performance
ID
▼ RoHS Compliant & Halogen-Free
Description
16mΩ
12A
P-CH BVDSS
S1 G1 S2 G2
20V
-20V
RDS(ON)
32mΩ
ID
-8.8A
AP6941 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
D1
D1
D2
D2
The PMPAK ® 5x6 package is special for voltage conversion
application using standard infrared reflow technique with the
backside heat sink to achieve the good thermal performance.
S1
G1
S2
G2
PMPAK® 5x6
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
20
-20
V
+8
+8
V
12
-8.8
A
3
9.6
-7.1
A
30
-30
A
Continuous Drain Current , VGS @ 4.5V
Pulsed Drain Current
P-channel
3
Continuous Drain Current , VGS @ 4.5V
IDM
Units
1
PD@TA=25℃
Total Power Dissipation
3.57
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Units
Rating
N-channel
P-channel
Rthj-c
Maximum Thermal Resistance, Junction-case
10
10
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
35
35
℃/W
Data and specifications subject to change without notice
1
201210292
AP6941GMT-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
20
-
-
V
VGS=4.5V, ID=10A
-
12.8
16
mΩ
VGS=2.5V, ID=6A
-
20
26
mΩ
0.3
0.64
1.2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=10A
-
25
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=10A
-
8
12.8
nC
Qgs
Gate-Source Charge
VDS=10V
-
1.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.9
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
10
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18
-
ns
tf
Fall Time
VGS=5V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
960
pF
Coss
Output Capacitance
VDS=10V
-
125
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Gate Resistance
f=1.0MHz
-
1.5
3
Ω
Min.
Typ.
IS=10A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
2
AP6941GMT-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max.
Unit
VGS=0V, ID=-250uA
-20
-
-
V
VGS=-4.5V, ID=-8A
-
24.7
32
mΩ
VGS=-2.5V, ID=-4A
-
34.6
45
mΩ
-0.3
-0.64
-1.2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-10V, ID=-8A
-
21
-
S
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-8A
-
13
20.8
nC
Qgs
Gate-Source Charge
VDS=-10V
-
1.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.6
-
nC
td(on)
Turn-on Delay Time
VDS=-10V
-
9
-
ns
tr
Rise Time
ID=-1A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
50
-
ns
tf
Fall Time
VGS=-5V
-
39
-
ns
Ciss
Input Capacitance
VGS=0V
-
1050 1680
pF
Coss
Output Capacitance
VDS=-10V
-
180
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Gate Resistance
f=1.0MHz
-
7
14
Ω
Min.
Typ.
Max.
Unit
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=-8A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-8A, VGS=0V,
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 85oC/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP6941GMT-HF
N-Channel
30
30
5.0V
4.5V
4.0V
3.0V
V G = 2.0V
ID , Drain Current (A)
20
o
T A = 150 C
ID , Drain Current (A)
o
T A =25 C
10
0
5.0V
4.5V
4.0V
3.0V
V G = 2.0V
20
10
0
0
3
6
0
9
2
V DS , Drain-to-Source Voltage (V)
4
6
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
35
ID=6A
I D =10A
V G =4.5V
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
30
25
20
1.4
1.0
15
0.6
10
1
2
3
4
-50
5
0
V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
8
I D =1mA
1.2
T j =25 o C
o
T j =150 C
4
Normalized VGS(th)
IS(A)
6
0.8
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP6941GMT-HF
N-Channel
f=1.0MHz
800
I D = 10 A
V DS = 10 V
6
600
C iss
C (pF)
VGS , Gate to Source Voltage (V)
8
4
400
2
200
C oss
C rss
0
0
0
2
4
6
8
10
12
1
14
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
Operation in this area
limited by RDS(ON)
10
ID (A)
100us
1ms
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
PDM
0.1
t
0.05
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 85℃/W
Single Pulse
0.01
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
16
ID , Drain Current (A)
ID , Drain Current (A)
V DS =5V
20
10
T j =150 o C
12
8
4
o
T j =25 C
T j = -40 o C
0
0
0
1
2
3
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
4
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
5
AP6941GMT-HF
P-Channel
30
25
T A = 150 C
20
-ID , Drain Current (A)
-ID , Drain Current (A)
20
-5.0V
-4.5V
-4.0V
-3.0V
V G = -2.0V
o
-5.0V
-4.5V
-4.0V
-3.0V
V G = -2.0V
o
T A = 25 C
10
15
10
5
0
0
0
2
4
6
8
10
0
2
-V DS , Drain-to-Source Voltage (V)
4
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
50
I D = -8 A
V G = -4.5 V
ID=-4A
T A =25 o C
44
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
38
32
1.2
0.8
26
0.4
20
1
2
3
4
-50
5
0
-V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.6
I D = -1mA
8
1.2
T j =25 o C
Normalized -VGS(th)
-IS(A)
T j =150 o C
6
4
0.8
0.4
2
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP6941GMT-HF
P-Channel
8
I D = -8A
V DS = -10V
C iss
1000
6
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
1200
4
800
600
400
2
C oss
C rss
200
0
0
0
4
8
12
16
20
1
24
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
1
100us
1ms
1
10ms
100ms
1s
0.1
DC
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
Operation in this area
limited by RDS(ON)
10
Duty factor=0.5
0.2
0.1
0.1
PDM
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.02
Rthja = 85℃/W
0.01
Single Pulse
0.01
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
10
T j = -40 o C
V DS =-5V
o
T j =25 C
24
8
-ID , Drain Current (A)
-ID , Drain Current (A)
13
Fig 8. Typical Capacitance Characteristics
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
T j =150 o C
18
12
6
6
4
2
0
0
0
1
2
3
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
4
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
7