AP9408AGH
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
30V
RDS(ON)
10mΩ
ID
G
53A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
□
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current
53
A
ID@TC=100℃
Continuous Drain Current
33
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
TJ
160
A
44.6
W
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
1
200810283
AP9408AGH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=30A
-
-
10
mΩ
VGS=4.5V, ID=20A
-
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
30
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=20A
-
6.5
10.5
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.7
-
nC
VDS=15V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
4.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=15Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
960
pF
Coss
Output Capacitance
VDS=25V
-
185
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.5
3.8
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=30A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time2
IS=10A, VGS=0V,
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9408AGH
160
100
10V
7.0 V
6.0V
5.0 V
ID , Drain Current (A)
120
o
T C =150 C
10V
7 .0V
6.0V
5.0 V
80
ID , Drain Current (A)
o
T C =25 C
V G = 4.0 V
80
V G =4.0V
60
40
40
20
0
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
V DS , Drain-to-Source Voltage (V)
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
2.0
I D =20A
I D =30A
V G =10V
T C =25 o C
Normalized RDS(ON)
13
RDS(ON) (mΩ)
1.0
12
11
1.6
1.2
10
0.8
9
0.4
8
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
Normalized VGS(th) (V)
30
IS(A)
20
o
T j =150 C
T j =25 o C
10
1.2
0.8
0.4
0
0.0
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9408AGH
8
f=1.0MHz
1000
800
V DS =15V
V DS =18V
V DS =24V
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =20A
4
C iss
600
400
C oss
2
200
C rss
0
0
0
2
4
6
8
10
1
12
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100
100us
ID (A)
13
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
10
1ms
10ms
100ms
DC
1
T C =25 o C
Single Pulse
0
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
E3
B1
F1
e
Millimeters
SYMBOLS
E1
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
F
2.20
2.63
3.05
F1
0.50
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Laser Marking
Part Number
9408AGH
Package Code
Meet Rohs requirement
for low voltage MOSFET only
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5