AP9581GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
-80V
RDS(ON)
15mΩ
ID
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
BVDSS
G
-95A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power
applications and suited for low voltage applications such as DC/DC
converters.
G
TO-220(P)
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-80
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-95
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-60
A
1
IDM
Pulsed Drain Current
-300
A
PD@TC=25℃
Total Power Dissipation
250
W
TSTG
Storage Temperature Range
-55 to 150
o
C
-55 to 150
o
C
Operating Junction Temperature Range
TJ
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.5
o
C/W
62
o
C/W
1
201107181
AP9581GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-80
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-30A
-
-
15
mΩ
VGS=-4.5V, ID=-20A
-
-
20
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-30A
-
60
-
S
IDSS
Drain-Source Leakage Current
VDS=-64V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=-30A
-
72
115
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-64V
-
11
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
45
-
nC
td(on)
Turn-on Delay Time
VDS=-40V
-
13
-
ns
Rise Time
ID=-30A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
135
-
ns
tf
Fall Time
VGS=-10V
-
165
-
ns
Ciss
Input Capacitance
VGS=0V
-
6200 9920
pF
Coss
Output Capacitance
VDS=-25V
-
900
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
390
-
pF
Min.
Typ.
(P) tr
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-30A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
60
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
125
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9581GP-HF
160
250
-10V
-8.0V
-7.0V
-6.0V
V G = - 5.0V
-ID , Drain Current (A)
200
-10V
-8.0V
-7.0V
-6.0V
V G = -5.0V
o
T C =150 C
-ID , Drain Current (A)
o
T C = 25 C
150
100
120
80
40
50
0
0
0
2
4
6
8
10
0
2
Fig 1. Typical Output Characteristics
6
8
10
Fig 2. Typical Output Characteristics
18
2.0
I D = - 30 A
V G = -10V
I D = -20 A
T C =25 o C
Normalized RDS(ON)
16
RDS(ON) (mΩ)
4
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
14
12
1.6
1.2
0.8
10
0.4
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
40
Normalized -VGS(th) (V)
1.2
-IS(A)
30
T j =150 o C
20
T j =25 o C
1.0
0.8
0.6
10
0.4
0
0.2
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9581GP-HF
f=1.0MHz
10
10000
-VGS , Gate to Source Voltage (V)
V DS = - 64 V
I D = - 30 A
8
C (pF)
8000
6
C iss
6000
4
4000
2
2000
C oss
C rss
0
0
0
40
80
120
1
160
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Operation in this
area limited by
RDS(ON)
100us
-ID (A)
100
Normalized Thermal Response (Rthjc)
1
1ms
10ms
100ms
DC
10
T c =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
VG
-ID , Drain Current (A)
80
QG
-4.5V
60
QGS
QGD
40
20
Charge
Q
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
Fig 12. Gate Charge Waveform
4