Anpec APM7317KCTR Dual n-channel enhancement mode mosfet Datasheet

APM7313
Dual N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
30V/6A , RDS(ON)=21mΩ(typ.) @ VGS=10V
SO-8
RDS(ON)=27mΩ(typ.) @ VGS=4.5V
•
S1
1
8
D1
G1
2
7
D1
Reliable and Rugged
S2
3
6
D2
SO-8 Package
G2
4
5
D2
Super High Dense Cell Design for Extremely
Low RDS(ON)
•
•
Top View
Applications
•
D1
D1
D2
D2
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G1
G2
S1
S2
N-Channel MOSFET N-Channel MOSFET
Ordering and Marking Information
APM 7313
P ackage C ode
K : S O -8
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
H a n d lin g C o d e
Tem p. R ange
P ackage C ode
APM 7313 K :
APM 7313
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
Unit
V
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
1
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APM7313
Absolute Maximum Ratings (Cont.)
Symbol
ID
*
(TA = 25°C unless otherwise noted)
Parameter
Rating
Unit
Maximum Drain Current – Continuous
6
IDM
Maximum Drain Current – Pulsed
24
PD
Maximum Power Dissipation
TA=25°C
2.5
W
TA=100°C
1.0
W
150
°C
-55 to 150
°C
50
°C/W
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
RθjA
Thermal Resistance – Junction to Ambient
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM7313
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown
Voltage
BVDSS
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
IDSS
VGS(th)
IGSS
Gate Leakage Current
Drain-Source On-state
RDS(ON)a
Resistance
Diode Forward Voltage
VSDa
VGS=0V , IDS=250µA
30
V
1
µA
1.5
2
V
VGS=±20V , VDS=0V
VGS=10V , IDS=3.5A
nA
21
±100
28
VGS=4.5V , IDS=2A
27
42
ISD=2A , VGS=0V
0.7
1.3
VDS=15V , IDS= 10A
30
36
VDS=24V , VGS=0V
VDS=VGS , IDS=250µA
1
mΩ
V
b
Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(ON)
Turn-on Delay Time
VGS=10V
Tr
Turn-on Rise Time
VDD=15V , IDS=2A ,
td(OFF)
Turn-off Delay Time
VGEN=10V , RG=6Ω
Tf
Turn-off Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Notes
a
b
nC
5.8
3.8
VGS=0V
11
22
17
33
37
68
20
38
ns
1200
VDS=25V
Reverse Transfer Capacitance Frequency=1.0MHz
210
pF
95
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
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APM7313
Typical Characteristics
Output Characteristics
Transfer Characteristics
40
30
IDS-Drain Current (A)
IDS-Drain Current (A)
VGS=4,4.5,6,8,10V
25
20
15
VGS=3.5V
10
V GS=3V
5
30
20
TJ=25°C
TJ=125°C
10
VGS=2.5V
0
1.0
0
0
1
2
3
4
5
6
7
8
9
10
1.5
VDS-Drain-to-Source Voltage (V)
2.0
2.5
3.0
3.5
4.0
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Threshold Voltage vs. Junction Temperature
1.2
0.050
IDS=250µA
0.045
RDS(ON)-On-Resistance (Ω)
VGS(th)-Threshold Voltage (V)
(Normalized)
TJ=-55°C
1.0
0.8
0.6
0.040
VGS=4.5V
0.035
0.030
VGS=10V
0.025
0.020
0.015
0.010
0.005
0.4
-50
-25
0
25
50
75
100
125
0.000
150
0
Tj-Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
5
10
15
20
25
30
IDS-Drain Current (A)
3
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APM7313
Typical Characteristics (Cont.)
On-Resistaence vs. Junction Temperature
RDS(ON)-On Resistance (Ω) (Normalized)
On-Resistance vs. Gate-to-Source Voltage
0.050
IDS=3.5A
RDS (ON) - On-Resistance (Ω)
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
3
4
5
6
7
8
9
10
VGS=10V
IDS=3.5A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
Gate Voltage (V)
Tj-Junction Temperature (°C)
Gate Charge
Capacitance Characteristics
150
2000
10
V DS= 1 5 V
I DS= 1 0 A
Ciss
1000
8
C-Capacitance (pF)
VGS-Gate-to-Source Voltage (V)
1.6
6
4
500
Coss
Crss
100
2
Frequency=1MHz
0
0
5
10
15
20
25
0.1
30
10
30
VDS-Drain-to-Source Voltage (V)
QG-Total Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
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4
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APM7313
Typical Characteristics (Cont.)
Single Pulse Power
Source-Drain Diode Forward Voltage
80
60
10
Power (W)
ISD-Source Current (A)
100
TJ=125°C
1
40
TJ=-55°C
20
TJ=25°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.01
1.4
0.1
1
VSD-Source to Drain Voltage
10
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Transient Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
1. Duty Cycle , D=t1/t2
2. Per Unit Base=RthJA=50°C/W
3. TJM-TA=PDMZthJA
4. Surface Mounted
D=0.02
SINGLE
0.01
1E-4
1E-3
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
5
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APM7313
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Mi ll im et er s
Inche s
A
Min .
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
1. 27B S C
0. 50B S C
8°
8°
6
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APM7313
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
7
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM7313
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
ESD
Latch-Up
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
MIL-STD-883D-1011.9
MIL-STD-883D-3015.7
JESD 78
Description
245°C , 5 SEC
1000 Hrs Bias @ 125 °C
168 Hrs, 100 % RH , 121°C
-65°C ~ 150°C, 200 Cycles
VHBM > 2KV, VMM > 200V
10ms , Itr > 100mA
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
SOP-8
A
330±1
Application
SOP-8
F
5.5 ± 0.1
Application
B
62 ± 1.5
C
12.75 +
0.1 5
J
2 + 0.5
D
D1
Po
1.55±0.1 1.55+ 0.25 4.0 ± 0.1
T1
12.4 +0.2
T2
2± 0.2
W
12 + 0.3
- 0.1
P1
2.0 ± 0.1
Ao
6.4 ± 0.1
Bo
5.2± 0.1
P
8± 0.1
E
1.75± 0.1
Ko
t
2.1± 0.1 0.3±0.013
(mm)
Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
8
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APM7313
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
9
www.anpec.com.tw
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