APT11058B2FLL
APT11058LFLL
1100V 20A 0.580Ω
POWER MOS 7
R
FREDFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-264
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
T-MAX™
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT11058B2FLL_LFLL
UNIT
1100
Volts
Drain-Source Voltage
20
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
568
Watts
Linear Derating Factor
4.55
W/°C
PD
TJ,TSTG
1
80
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
20
(Repetitive and Non-Repetitive)
1
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1100
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 10A)
TYP
MAX
UNIT
Volts
0.580
Ohms
Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
4-2004
Characteristic / Test Conditions
050-7181 Rev A
Symbol
APT11058B2FLL_LFLL
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Characteristic
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
3
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 550V
tf
ID = 20A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
700
VDD = 733V, VGS = 15V
210
ID = 20A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
12
RG = 0.6Ω
Eon
UNIT
pF
120
160
20
105
16
8
40
ID = 20A @ 25°C
Turn-off Delay Time
MAX
4135
680
VDD = 550V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
µJ
1450
VDD = 733V VGS = 15V
ID = 20A, RG = 5Ω
270
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/
Characteristic / Test Conditions
MIN
TYP
MAX
20
Continuous Source Current (Body Diode)
Amps
Pulsed Source Current
1
(Body Diode)
80
Diode Forward Voltage
2
(VGS = 0V, IS = -20A)
1.3
Volts
18
V/ns
Peak Diode Recovery
dt
UNIT
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -20A, di/dt = 100A/µs)
Tj = 25°C
340
Tj = 125°C
640
Q rr
Reverse Recovery Charge
(IS = -20A, di/dt = 100A/µs)
Tj = 25°C
1.78
Tj = 125°C
4.47
IRRM
Peak Recovery Current
(IS = -20A, di/dt = 100A/µs)
Tj = 25°C
11.4
Tj = 125°C
16.4
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.22
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.5
Note:
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7181 Rev A
4-2004
0.25
0.15
0.3
0.05
0
SINGLE PULSE
0.1
0.05
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 12.50mH, RG = 25Ω, Peak IL = 20A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID20A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
UNIT
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
40
RC MODEL
0.0893
Power
(watts)
0.0842
0.0485
0.0102F
0.106F
0.980F
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
Case temperature. (°C)
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
TJ = -55°C
30
TJ = +25°C
20
TJ = +125°C
10
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
20
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
20
6V
15
10
5.5V
5
5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
NORMALIZED TO
V
= 10V @ 10A
GS
1.30
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
3
I
D
V
5
10
15
20
25 30
35
40
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 10A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4-2004
ID, DRAIN CURRENT (AMPERES)
16
0
-50
6.5V
30
1.15
18
2.5
35
7V
050-7181 Rev A
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
50
VGS =15,10 & 7.5V
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
60
APT11058B2FLL_LFLL
45
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10,000
100µS
10
5
1mS
1
10mS
C, CAPACITANCE (pF)
Ciss
1
10
100
1100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 20A
VDS= 220V
12
VDS= 550V
8
VDS= 880V
4
0
0
40
80
120
160
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
td(off)
V
DD
R
G
= 5Ω
J
L = 100µH
40
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
tf
40
V
DD
R
G
30
= 733V
= 5Ω
T = 125°C
J
L = 100µH
tr
10
td(on)
0
5
0
15
20
25
30
35
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
10
15
20
25
30
35
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
5
10
2500
= 733V
T = 125°C
J
L = 100µH
E ON includes
diode reverse recovery.
1500
Eon
1000
500
Eoff
0
0
= 5Ω
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
TJ =+150°C
20
20
4-2004
100
50
= 733V
T = 125°C
60
0
200
60
tr and tf (ns)
td(on) and td(off) (ns)
80
2000
Crss
100
70
100
2500
Coss
10
120
0
1,000
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
050-7181 Rev A
APT11058B2FLL_LFLL
20,000
OPERATION HERE
LIMITED BY RDS (ON)
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
80
5
10
15
20
25
30
35
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
2000
Eon
1500
Eoff
1000
V
DD
I
D
= 733V
= 20A
T = 125°C
500
J
L = 100µH
EON includes
0
diode reverse recovery.
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT11058B2FLL_LFLL
90%
10%
Gate Voltage
Gate Voltage T 125°C
J
TJ125°C
td(off)
td(on)
Drain Voltage
90%
tf
90%
tr
Drain Current
5%
10%
5%
10%
0
Drain Voltage
Switching Energy
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF120
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
4-2004
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7181 Rev A
Drain
Drain
20.80 (.819)
21.46 (.845)