APT11GP60K_SA
APT11GP60K
APT11GP60SA
TYPICAL PERFORMANCE CURVES
600V
POWER MOS 7 IGBT
®
(K)
D2PAK
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
(SA)
TO-220
C
G
G
• SSOA rated
C
E
E
C
• Low Gate Charge
G
• Ultrafast Tail Current shutoff
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT11GP60K_SA
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±20
VGEM
Gate-Emitter Voltage Transient
±30
IC1
Continuous Collector Current @ TC = 25°C
41
IC2
Continuous Collector Current @ TC = 100°C
20
ICM
Pulsed Collector Current
SSOA
PD
TJ,TSTG
TL
1
UNIT
Volts
Amps
45
@ TC = 150°C
45A @ 600V
Switching Safe Operating Area @ TJ = 150°C
187
Total Power Dissipation
Watts
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
STATIC ELECTRICAL CHARACTERISTICS
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
600
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
TYP
MAX
4.5
6
Collector-Emitter On Voltage (VGE = 15V, I C = 11A, Tj = 25°C)
2.2
2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 11A, Tj = 125°C)
2.1
3
(VCE = VGE, I C = 1mA, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
250
2
Gate-Emitter Leakage Current (VGE = ±20V)
Volts
µA
2500
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
nA
6-2004
MIN
Rev B
Characteristic / Test Conditions
050-7419
Symbol
APT11GP60K_SA
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
1210
VGE = 0V, VCE = 25V
110
Reverse Transfer Capacitance
f = 1 MHz
6
Gate-to-Emitter Plateau Voltage
Gate Charge
VGE = 15V
7.5
VCE = 300V
8
13
Input Capacitance
Coes
Output Capacitance
Cres
VGEP
Qge
TYP
Capacitance
Cies
Qg
MIN
Total Gate Charge
3
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
I C = 11A
SSOA
Switching Safe Operating Area
TJ = 150°C, R G = 5Ω, VGE =
MAX
UNIT
pF
V
40
nC
45
A
15V, L = 100µH,VCE = 600V
td(on)
tr
td(off)
tf
Turn-on Delay Time
Current Rise Time
Eoff
Turn-off Switching Energy
td(on)
Turn-on Delay Time
Eon2
Eoff
7
VGE = 15V
65
9
I C = 11A
Current Fall Time
5
ns
85
R G = 5Ω
4
Turn-on Switching Energy (Diode)
µJ
90
Inductive Switching (125°C)
VCC = 400V
Turn-off Delay Time
Turn-off Switching Energy
85
6
Current Rise Time
Turn-on Switching Energy
46
TJ = +25°C
5
ns
50
R G = 5Ω
4
Turn-on Switching Energy (Diode)
Eon1
29
9
I C = 11A
Eon2
tf
VGE = 15V
Current Fall Time
Turn-on Switching Energy
td(off)
7
Turn-off Delay Time
Eon1
tr
Inductive Switching (25°C)
VCC = 400V
46
TJ = +125°C
185
6
µJ
215
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RΘJC
Junction to Case (IGBT)
0.67
RΘJC
Junction to Case (DIODE)
N/A
Package Weight
5.90
WT
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
050-7419
Rev B
6-2004
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
35
IC, COLLECTOR CURRENT (A)
TC=-55°C
25
TC=25°C
20
TC=125°C
15
10
5
0
40
TJ = -55°C
TJ = 25°C
20
TJ = 125°C
10
0
3.5
3.0
IC = 22A
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
2.5
IC = 11A
2.0
IC = 5.5A
1.5
1.0
0.5
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
6
1.00
0.95
0.90
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
10
5
14
IC = 11A
TJ = 25°C
12
VCE = 120V
10
VCE = 300V
8
VCE = 480V
6
4
2
0
5
10
15
20
25 30
GATE CHARGE (nC)
FIGURE 4, Gate Charge
35
40
3.0
IC = 22A
2.5
IC = 11A
2.0
IC = 5.5A
1.5
1.0
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
1.10
1.05
TC=125°C
15
0
2
4
6
8
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
30
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
50
TC=25°C
20
FIGURE 2, Output Characteristics (VGE = 10V)
16
IC, DC COLLECTOR CURRENT(A)
IC, COLLECTOR CURRENT (A)
60
TC=-55°C
25
0
1
2
3
4
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V)
80
70
30
0
0
1
2
3
4
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250µs PULSE TEST
<0.5 % DUTY CYCLE
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
40
30
20
10
0
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
6-2004
30
APT11GP60K_SA
Rev B
35
IC, COLLECTOR CURRENT (A)
40
050-7419
40
VGE= 15V
6
4
VCE = 400V
TJ = 25°C, TJ =125°C
RG = 5Ω
L = 100 µH
2
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
8
0
APT11GP60K_SA
70
10
VGE =15V,TJ=125°C
50
40
30
VGE =15V,TJ=25°C
20
VCE = 400V
RG = 5Ω
L = 100 µH
10
0
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
16
60
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
RG = 5Ω, L = 100µH, VCE = 400V
14
100
tf, FALL TIME (ns)
tr, RISE TIME (ns)
12
10
8
TJ = 25 or 125°C,VGE = 15V
6
80
TJ = 125°C, VGE = 5V
60
40
TJ = 25°C, VGE = 15V
4
20
2
5
10
15
20
25
30
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
600
VCE = 400V
L = 100 µH
RG = 5Ω
EOFF, TURN OFF ENERGY LOSS (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
500
400
TJ =125°C, VGE=15V
300
200
100
TJ = 25°C, VGE=15V
0
VCE = 400V
L = 100 µH
RG = 5Ω
300
200
100
TJ = 25°C, VGE = 15V
600
Eoff 22A
500
Eon2 22A
400
VCE = 400V
VGE = +15V
TJ = 125°C
300
Eon2 11A
200
Eoff 11A
Eon2 5.5A
100
Eoff 5.5A
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (µJ)
SWITCHING ENERGY LOSSES (µJ)
6-2004
Rev B
400
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
600
050-7419
TJ = 125°C, VGE = 15V
500
0
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
0
RG = 5Ω, L = 100µH, VCE = 400V
0
0
VCE = 400V
VGE = +15V
RG = 5Ω
500
Eoff 22A
400
300
Eon2 22A
200
Eoff 11A
Eon2 11A
100
0
Eon2 5.5A
Eoff 5.5A
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
1,000
Cies
45
500
40
IC, COLLECTOR CURRENT (A)
P
C, CAPACITANCE ( F)
APT11GP60K_SA
50
2,000
100
Coes
50
10
5
Cres
1
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
35
30
25
20
15
10
5
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.9
0.60
0.50
0.7
0.40
0.5
0.30
Note:
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.70
0.3
0.20
t1
t2
0.10
0.1
Duty Factor D = t1/t2
SINGLE PULSE
Peak TJ = PDM x ZθJC + TC
0.05
0
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
1.0
Power
(watts)
0.295
0.0545F
Case temperature(°C)
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
Fmax = min(f max1 , f max 2 )
100
50
10
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 200V
RG = 5Ω
0
f max1 =
0.05
t d (on ) + t r + t d(off ) + t f
f max 2 =
Pdiss − Pcond
E on 2 + E off
Pdiss =
5
10
15
20
25
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ − TC
R θJC
6-2004
0.00350F
Rev B
0.376
500
050-7419
RC MODEL
Junction
temp (°C)
FMAX, OPERATING FREQUENCY (kHz)
1000
APT11GP60K_SA
APT15DS30
APT15DF60
Gate Voltage
10%
TJ = 125°C
V CE
IC
V CC
Drain Current
td(on)
tr
90%
A
5%
5%
10%
D.U.T.
DrainVoltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
*DRIVER SAME TYPE AS D.U.T.
90%
Gate Voltage
A
TJ = 125°C
V CE
DrainVoltage
td(off)
IC
100uH
90%
tf
V CLAMP
10%
A
0
Figure 24, EON1 Test Circuit
Figure 23, Turn-off Switching Waveforms and Definitions
12.192 (.480)
9.912 (.390)
Drain
4.08 (.161) Dia.
3.54 (.139)
3.42 (.135)
2.54 (.100)
TO-263 (D2) Surface mount Package Outline (SA)
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
Collector
(Heat Sink)
TO-220AC Package Outline (K)
1.39 (.055)
0.51 (.020)
6-2004
Rev B
050-7419
4.82 (.190)
3.56 (.140)
2.92 (.115)
2.04 (.080)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
4.45 (.175)
4.57 (.180)
1.27 (.050)
1.32 (.052)
0.050 (.002)
10.06 (.396)
10.31 (.406)
1.40 (.055)
1.65 (.065)
8.51 (.335)
8.76 (.345)
7.54 (.297)
7.68 (.303)
6.02 (.237)
6.17 (.243)
0.330 (.013)
0.432 (.017)
3.683 (.145)
MAX.
0.50 (.020)
0.41 (.016)
D.U.T.
DRIVER*
Drain Current
Switching Energy
B
Gate
Collector
Emitter
1.77 (.070) 3-Plcs.
1.15 (.045)
Dimensions in Millimeters and (Inches)
0.000 (.000)
0.254 (.010)
2.62 (.103)
2.72 (.107)
1.22 (.048)
1.32 (.052)
{3 Plcs.}
0.762 (.030)
0.864 (.034)
{2 Plcs.}
2.54 (.100) BSC
{2 Plcs.}
Emitter
Collector
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.68 (.145)
6.27 (.247)
(Base of Lead)
Heat Sink (Collector)
and Leads are Plated