APT12057B2FLL
APT12057LFLL
1200V 22A 0.570Ω
POWER MOS 7
R
FREDFET
B2FLL
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-264
LFLL
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
T-MAX™
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT12057B2FLL_LFLL
UNIT
1200
Volts
Drain-Source Voltage
22
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
690
Watts
Linear Derating Factor
5.52
W/°C
PD
TJ,TSTG
1
88
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
-55 to 150
°C
300
Amps
22
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1200
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 11A)
TYP
MAX
UNIT
Volts
0.570
Ohms
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
7-2004
Characteristic / Test Conditions
050-7083 Rev C
Symbol
APT12057 B2FLL_LFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
C iss
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
3
RESISTIVE SWITCHING
VGS = 15V
VDD = 600V
ID = 22A @ 25°C
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
865
VDD = 800V, VGS = 15V
420
ID = 22A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
21
RG = 0.6Ω
Eon
UNIT
pF
130
185
24
120
11
20
36
VDD = 600V
Fall Time
MAX
5155
770
ID = 22A @ 25°C
Turn-off Delay Time
tf
TYP
VGS = 10V
Rise Time
td(off)
MIN
µJ
1390
VDD = 800V VGS = 15V
ID = 22A, RG = 5Ω
530
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
88
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -22A)
1.3
Volts
18
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
22
5
t rr
Reverse Recovery Time
(IS = -22A, di/dt = 100A/µs)
Tj = 25°C
320
Tj = 125°C
650
Q rr
Reverse Recovery Charge
(IS = -22A, di/dt = 100A/µs)
Tj = 25°C
18
Tj = 125°C
7
IRRM
Peak Recovery Current
(IS = -22A, di/dt = 100A/µs)
Tj = 25°C
28
Tj = 125°C
220
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.18
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.12
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7083 Rev C
7-2004
0.20
0.3
0.04
SINGLE PULSE
0.1
0
0.05
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 12.39mH, RG = 25Ω, Peak IL = 22A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -22A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.16
UNIT
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
0.0272
Power
(watts)
0.0565
0.0860
VGS =15,10 & 8V
45
RC MODEL
0.0090F
0.0202F
0.293F
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
APT12057 B2FLL_LFLL
50
Case temperature. (°C)
40
7V
35
6.5V
30
25
6V
20
15
5.5V
10
5
5V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
60
50
40
30
20
TJ = +125°C
10
0
TJ = +25°C
TJ = -55°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
20
15
10
5
0
25
NORMALIZED TO
= 10V @ I = 11A
GS
D
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
5
10
15
20
25
30
35
40
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
I
D
= 0.5 I
D
V
GS
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
[Cont.]
= 10V
2.0
1.5
1.0
0.5
-50 -25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
0.0
V
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
25
1.40
1.1
1.0
0.9
0.8
7-2004
70
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0.7
0.6
-50 -25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7083 Rev C
ID, DRAIN CURRENT (AMPERES)
80
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
88
10,000
5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
VDS=100V
VDS=250V
8
VDS=400V
4
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
= 800V
DD
R
G
= 5Ω
T = 125°C
V
100
DD
R
G
= 800V
= 5Ω
T = 125°C
J
80
tf
L = 100µH
50
tr and tf (ns)
td(on) and td(off) (ns)
10
V
L = 100µH
60
40
30
20
40
tr
10
td(on)
0
10
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
20
V
DD
R
G
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
4000
= 800V
DD
I
3500
T = 125°C
D
= 800V
= 22A
T = 125°C
J
J
L = 100µH
E ON includes
diode reverse recovery.
2000
Eon
1500
1000
Eoff
500
0
10
20
V
= 5Ω
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
TJ =+25°C
J
0
10
7-2004
TJ =+150°C
60
20
050-7083 Rev C
100
70
120
2500
200
td(off)
140
3000
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
160
3500
Coss
500
100
10mS
= 22A
12
1,000
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
C, CAPACITANCE (pF)
100µS
10
Ciss
5,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
0
APT12057 B2FLL_LFLL
20,000
3000
Eoff
L = 100µH
EON includes
diode reverse recovery.
2500
2000
Eon
1500
1000
500
0
20
30
40
50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT12057 B2FLL_LFLL
Typical Performance Curves
90%
Gate Voltage
10%
TJ125°C
td(on)
TJ125°C
tf
Drain Current
tr
Gate Voltage
td(off)
Drain Voltage
90%
90%
10%
0
5%
5%
Drain Current
Drain Voltage
10%
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF120
ID
V DD
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
7-2004
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7083 Rev C
Drain
Drain
20.80 (.819)
21.46 (.845)