APT20M20JLL
200V 104A 0.020Ω
POWER MOS 7
R
MOSFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
S
S
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT20M20JLL
UNIT
200
Volts
Drain-Source Voltage
104
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
463
Watts
Linear Derating Factor
3.70
W/°C
PD
TJ,TSTG
1
416
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
100
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 52A)
TYP
MAX
Volts
0.020
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
4-2004
Characteristic / Test Conditions
050-7021 Rev D
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT20M20JLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
2180
Crss
Reverse Transfer Capacitance
f = 1 MHz
95
VGS = 10V
110
VDD = 100V
43
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
ID = 104A @ 25°C
tf
40
VDD = 100V
RG = 0.6Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
2
INDUCTIVE SWITCHING @ 25°C
6
465
VDD = 130V, VGS = 15V
6
ns
26
ID = 104A @ 25°C
Turn-off Delay Time
nC
13
VGS = 15V
Rise Time
td(off)
pF
47
RESISTIVE SWITCHING
Turn-on Delay Time
tr
UNIT
6850
VGS = 0V
3
MAX
ID = 104A, RG = 5Ω
455
INDUCTIVE SWITCHING @ 125°C
920
VDD = 130V, VGS = 15V
ID = 104A, RG = 5Ω
µJ
915
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
104
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID104A, dl S/dt = 100A/µs)
284
ns
Q rr
Reverse Recovery Charge (IS = -ID104A, dl S/dt = 100A/µs)
3.06
µC
dv/
Peak Diode Recovery
dt
416
(Body Diode)
1.3
(VGS = 0V, IS = -ID104A)
dv/
5
dt
Amps
Volts
5
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.27
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.46mH, RG = 25Ω, Peak IL = 104A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID75A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.9
0.20
0.7
0.15
0.5
0.10
0.3
0.05
0
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7021 Rev D
4-2004
0.30
0.25
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-5
t1
t2
0.1
SINGLE PULSE
10-4
°C/W
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
APT20M20JLL
250
RC MODEL
0.0409
Power
(Watts)
0.225
0.00361
0.0246F
0.406F
0.147.639F
Case temperature
ID, DRAIN CURRENT (AMPERES)
VGS =15 &10V
Junction
temp. ( ”C)
9V
200
7.5V
150
7V
100
6.5
6V
50
5.5V
0
200
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
160
140
120
100
TJ = +125°C
80
TJ = +25°C
TJ = -55°C
60
40
20
0 1
2 3
4 5 6
7 8 9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
100
90
80
70
60
50
40
30
20
10
0
25
I
V
D
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
20 40
60 80 100 120 140 160
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON)vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
= 52A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.20
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
D
1.30
1.15
110
NORMALIZED TO
= 10V @ I = 52A
GS
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4-2004
0
V
050-7021 Rev D
ID, DRAIN CURRENT (AMPERES)
180
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
10,000
100
1mS
10mS
10
Crss
I
D
= 75A
VDS=40V
12
VDS=100V
VDS=160V
8
4
0
0
20
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
40 60 80 100 120 140 160 180
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
90
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160
80
V
G
J
DD
R
G
L = 100µH
50
= 130V
tr and tf (ns)
V
= 5Ω
T = 125°C
J
L = 100µH
40
= 130V
= 5Ω
T = 125°C
120
60
DD
R
140
td(off)
70
td(on) and td(off) (ns)
100
10
1
10
100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
30
td(on)
20
100
tf
80
tr
60
40
20
10
0
20
40
0
20
80
100
120
140
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
60
80
100
120
140
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1400
DD
R
G
= 5Ω
T = 125°C
J
1000
L = 100µH
E ON includes
diode reverse recovery.
800
600
Eon
400
200
0
20
60
= 130V
SWITCHING ENERGY (µJ)
1200
40
2500
V
SWITCHING ENERGY (µJ)
Coss
1,000
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
4-2004
Ciss
100µS
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
050-7021 Rev D
APT20M20JLL
20,000
415
2000
Eoff
1500
Eon
1000
V
I
= 130V
= 100A
T = 125°C
500
J
L = 100µH
EON includes
Eoff
40
DD
D
diode reverse recovery.
60
80
100
120
140
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT20M20JLL
90%
10%
Gate Voltage
Gate Voltage
TJ125°C
td(off)
td(on)
tf
tr
Drain Current
90%
5%
5%
10%
T 125°C
J
Drain Voltage
90%
10%
Drain Voltage
0
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT100S20B
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
4-2004
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7021 Rev D
7.8 (.307)
8.2 (.322)